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- Cao, Han, et al.
(författare)
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Fabrication of 10 nm enclosed nanofluidic channels
- 2002
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 81:1, s. 174-176
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Tidskriftsartikel (refereegranskat)abstract
- We made uniform arrays of nanometer scale structures using nanoimprint lithography over large areas (100 mm wafers). The nanofluidic channels were further narrowed and sealed by techniques that are based on nonuniform deposition. The resulting sealed channels have a cross section as small as 10 nm by 50 nm, of great importance for confining biological molecules into ultrasmall spaces. These techniques can be valuable fabrication tools for Nanoelectromechanical Systems and Micro/Nano Total Analysis Systems.
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| 3. |
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| 4. |
- Kourmouli, Niki, et al.
(författare)
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Heterochromatin and tri-methylated lysine 20 of histone H4 in animals
- 2004
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Ingår i: Journal of Cell Science. - : The Company of Biologists. - 0021-9533 .- 1477-9137. ; 117:14, s. 2491-2501
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Tidskriftsartikel (refereegranskat)abstract
- Tri-methylated lysine 20 on histone H4 (Me(3)K20H4) is a marker of constitutive heterochromatin in murine interphase and metaphase cells. Heterochromatin marked by Me(3)K20H4 replicates late during S phase of the cell cycle. Serum starvation increases the number of cells that exhibit high levels of Me(3)K20H4 at constitutive heterochromatin. Me(3)K20H4 is also present at the centromeric heterochromatin of most meiotic chromosomes during spermatogenesis and at the pseudoautosomal region, as well as at some telomeres. It is not present on the XY-body. During murine embryogenesis the maternal pronucleus contains Me(3)K20H4; Me(3)K20H4 is absent from the paternal pronucleus. On Drosophila polytene chromosomes Me(3)K20H4 is present in a `punctate pattern' at many chromosomal bands, including the chromocenter. In coccids it is present on the facultatively heterochromatinised paternal chromosome set. We also present evidence that Me(3)K20H4 is dependent upon H3-specific Suv(3)9 histone methyltransferase activity, suggesting that there may be `epigenetic cross-talk' between histones H3 and H4.
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| 5. |
- Wu, Y.-H., et al.
(författare)
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Surface diffusion limited nucleation of Ge dots on the Si(001) surface
- 2002
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Konferensbidrag (refereegranskat)abstract
- The formation of Ge islands during MBE growth is a spontaneous process and these islands, i.e. dots, are usually randomly arranged. In order to implement these nanoscaled islands into device applications, ordering of epitaxial dots is a crucial step. We report a study on the MBE growth of Ge islands on Si(001) substrates, containing <110>-oriented square and long stripe type patterns defined by anisotropic wet etching of Si, in order to provide more understanding of how surface diffusion of Ge atoms would influence the formation of Ge islands on various types of surfaces. It has been found that there were preferential nucleation sites for Ge islands along the bottom edges of the Si ridges. The Ge islands at the edge positions were larger than those formed on the free surface and they could be regularly spaced. Due to the consumption of Ge at the bottom edges of ridge patterns, the density of Ge dots on the free surface varied between ˜ 3 × 108 and ˜ 1 × 109 cm-2 when changing the spatial separation between two adjacent Si ridges (2-100 µm). A Ge mean diffusion length of ˜ 7.5 µm has been determined for Ge growth at 700 °C. © 2002 Elsevier Science B.V. All rights reserved.
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