1. |
|
|
2. |
- Mariani, G, et al.
(författare)
-
Thrombosis in inherited factor VII deficiency
- 2003
-
Ingår i: Journal of thrombosis and haemostasis : JTH. - : Elsevier BV. - 1538-7933 .- 1538-7836. ; 1:10, s. 2153-2158
-
Tidskriftsartikel (refereegranskat)
|
|
3. |
|
|
4. |
- Nylandsted Larsen, A., et al.
(författare)
-
Tin-vacancy acceptor levels in electron-irradiated n-type silicon
- 2000
-
Ingår i: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 62:7, s. 4535-4544
-
Tidskriftsartikel (refereegranskat)abstract
- Si crystals (n-type, fz) with doping levels between 1.5×1014 and 2×1016 cm-3 containing in addition ∼1018 Sn/cm3 were irradiated with 2-MeV electrons to different doses and subsequently studied by deep level transient spectroscopy, Mössbauer spectroscopy, and positron annihilation. Two tin-vacancy (Sn-V) levels at Ec-0.214 eV and Ec-0.501 eV have been identified (Ec denotes the conduction band edge). Based on investigations of the temperature dependence of the electron-capture cross sections, the electric-field dependence of the electron emissivity, the anneal temperature, and the defect-introduction rate, it is concluded that these levels are the double and single acceptor levels, respectively, of the Sn-V pair. These conclusions are in agreement with electronic structure calculations carried out using a local spin-density functional theory, incorporating pseudopotentials to eliminate the core electrons, and applied to large H-terminated clusters. Thus, the Sn-V pair in Si has five different charge states corresponding to four levels in the band gap.
|
|
5. |
|
|