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Träfflista för sökning "WFRF:(Xu Buqing) srt2:(2020)"

Sökning: WFRF:(Xu Buqing) > (2020)

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1.
  • Akbari-Saatlu, Mehdi, et al. (författare)
  • Silicon Nanowires for Gas Sensing : A Review
  • 2020
  • Ingår i: Nanomaterials. - : MDPI AG. - 2079-4991. ; 10:11
  • Forskningsöversikt (refereegranskat)abstract
    • The unique electronic properties of semiconductor nanowires, in particular silicon nanowires (SiNWs), are attractive for the label-free, real-time, and sensitive detection of various gases. Therefore, over the past two decades, extensive efforts have been made to study the gas sensing function of NWs. This review article presents the recent developments related to the applications of SiNWs for gas sensing. The content begins with the two basic synthesis approaches (top-down and bottom-up) whereby the advantages and disadvantages of each approach have been discussed. Afterwards, the basic sensing mechanism of SiNWs for both resistor and field effect transistor designs have been briefly described whereby the sensitivity and selectivity to gases after different functionalization methods have been further presented. In the final words, the challenges and future opportunities of SiNWs for gas sensing have been discussed.
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2.
  • Radamson, Henry H., et al. (författare)
  • State of the Art and Future Perspectives in Advanced CMOS Technology
  • 2020
  • Ingår i: Nanomaterials. - : MDPI AG. - 2079-4991. ; 10:8
  • Forskningsöversikt (refereegranskat)abstract
    • The international technology roadmap of semiconductors (ITRS) is approaching the historical end point and we observe that the semiconductor industry is driving complementary metal oxide semiconductor (CMOS) further towards unknown zones. Today's transistors with 3D structure and integrated advanced strain engineering differ radically from the original planar 2D ones due to the scaling down of the gate and source/drain regions according to Moore's law. This article presents a review of new architectures, simulation methods, and process technology for nano-scale transistors on the approach to the end of ITRS technology. The discussions cover innovative methods, challenges and difficulties in device processing, as well as new metrology techniques that may appear in the near future.
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