| 1. |
- Frimmer, Martin, et al.
(författare)
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Transport properties of three-terminal ballistic junctions realized by focused ion beam enhanced etching in InGaAs/InP
- 2008
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 93:13
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Tidskriftsartikel (refereegranskat)abstract
- Three-terminal junction devices are realized in an InGaAs/InP quantum well by focused ion beam (FIB) implantation and selective wet etching. Room temperature electrical measurements show that the fabricated devices exhibit strong nonlinear electrical properties. The results are discussed in terms of ballistic electron transport. It is demonstrated that FIB-enhanced etching processing can be exploited as a maskless, resist-free technique for fabrication of high-quality and functional nanoelectronic devices. (C) 2008 American Institute of Physics.
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| 2. |
- Li, Jie, et al.
(författare)
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Heat stress alters G-protein coupled receptor-mediated function and endothelium-dependent relaxation in rat mesenteric artery
- 2008
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Ingår i: European Journal of Pharmacology. - : Elsevier BV. - 1879-0712 .- 0014-2999. ; 588:2-3, s. 280-285
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Tidskriftsartikel (refereegranskat)abstract
- Heat stress has been demonstrated to have strong cardiovascular effects. However, the underlying mechanism-mediated cardiovascular effects are still not fully understood. The present study was designed to examine if heat stress alters vascular G-protein coupled receptor-mediated vasomotion and endothelium function in rat mesenteric artery. Rats were divided into two groups, heat stress rats and control. The G-protein coupled receptors of endothelin type B (ETB) receptor-, endothelin type A (ETA) receptor-, 5-hydroxytryptamine (5-HT) receptor-, calcitonin gene-related peptide (CGRP) receptor-, alpha-adrenoceptor-mediated vosoactivity and endothelium-dependent relaxation on rat mesenteric artery ring segments were monitored by a myograph system. The plasma level of CGRP was determined by radioimmunological assay. Compared with control arterial segments, the contractile response curves of sarafotoxin 6c, a selective ETB receptor agonist and 5-HT in the arterial segments from heat stress rats were shifted towards left. An increased maximum contraction (E-max) induced by sarafotoxin 6c, but not 5-HT, was seen in the arterial segments from heat stress rats. CGRP-incluced relaxation in endothelium-denuded arterial segments from heat stress rats was enhanced. The relaxation in endothelium-intact arterial segments induced by acetylcholine was significantly decreased in heat stress rats. In addition, the plasma concentration of CGRP was increased in heat stress rats. The endothelium-dependent relaxation was characterized and shown there was a decrease in nitric oxide and endothelium-derived hyperpolarising factor-mediated relaxation in the arterial segments from heat stress rats. In conclusion, heat stress induces an enhanced vascular endothelin ETB-, 5-HT-receptors-mediated contraction, an enhanced CGRP-receptor-induced relaxation and damage to endothelium-dependent relaxation.
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| 3. |
- Sun, Jie, et al.
(författare)
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A novel SR latch device realized by integration of three-terminal ballistic junctions in InGaAs/InP
- 2008
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Ingår i: IEEE Electron Device Letters. - 0741-3106. ; 29:6, s. 540-542
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Tidskriftsartikel (refereegranskat)abstract
- In this letter, a novel sequential logic device based on three-terminal ballistic junctions (TBJs) is proposed and demonstrated. Two TBJs and two in-plane gates are laterally integrated in a high-electron-mobility InGaAs/InP quantum-well material by a single-step lithography process. Electrical measurements reveal that the integrated device functions as a set-reset (SR) latch with voltage gains at room temperature. The demonstrated device provides a new and simple circuit design for SR latches in digital electronics.
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| 4. |
- Sun, Jie, et al.
(författare)
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A sequential logic device realized by integration of in-plane gate transistors in InGaAs/InP
- 2008
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951. ; 92:1
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Tidskriftsartikel (refereegranskat)abstract
- An integrated nanoelectronic circuit is fabricated from a high-mobility In0.75Ga0.25As/InP heterostructure. The manufactured device comprises two double in-plane gate transistors with a current channel of 1.1 mu m in length and 100 nm in width. The two transistors are coupled to each other in a configuration that the source of one transistor is directly connected with one in-plane gate of the other transistor. Electrical measurements reveal that this device functions as an SR (set-reset) latch (a sequential logic device) with a gain of similar to 4 in the logic swing at room temperature. The demonstrated device provides a simple circuit design for SR latches.
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| 5. |
- Sun, Jie, et al.
(författare)
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Frequency mixing and phase detection functionalities of three-terminal ballistic junctions
- 2007
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Ingår i: Nanotechnology. - : IOP Publishing. - 0957-4484 .- 1361-6528. ; 18:19
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Tidskriftsartikel (refereegranskat)abstract
- Three-terminal ballistic junctions (TBJs) are fabricated from a high-mobility InP/In0.75Ga0.25As heterostructure by electron-beam lithography. The voltage output from the central branch is measured as a function of the voltages applied to the left and right branches of the TBJs. The measurements show that the TBJs possess an intrinsic nonlinearity. Based on this nonlinearity, a novel room-temperature functional frequency mixer and phase detector are realized. The TBJ frequency mixer and phase detector are expected to have advantages over traditional circuits in terms of simple structure, small size and high speed, and can be used as a new type of building block in nanoelectronics.
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| 6. |
- Sun, Jie, et al.
(författare)
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Gate-defined quantum devices realized on an InGaAs/InP heterostructure by incorporating a high-kappa dielectric material
- 2009
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Ingår i: 2009 IEEE Nanotechnology Materials and Devices Conference. ; , s. 183-185
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Konferensbidrag (refereegranskat)abstract
- Gate-defined quantum devices in an InGaAs/InP heterostructure are achieved by introducing a HfO2 layer as the gate dielectric. The high-kappa layer is grown by atomic layer deposition and the fabrication process is described in detail. Electrical measurements at low temperature reveal the Coulomb blockade effect. Magnetotransport characterization is also carried out for the devices made from this promising spintronic material and the current peaks are found to shift in spin pairs with the applied B-field perpendicular to the wafer.
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| 7. |
- Sun, Jie, et al.
(författare)
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Gate-defined quantum-dot devices realized in InGaAs/InP by incorporating a HfO2 layer as gate dielectric
- 2009
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 94:4
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Tidskriftsartikel (refereegranskat)abstract
- Gate-defined quantum dots in an InGaAs/InP heterostructure are realized by incorporating a high-kappa HfO2 material as a gate dielectric using atomic layer deposition. The fabricated quantum-dot devices show Coulomb blockade effect at low temperature. The Coulomb blockade current peaks are found to shift in pairs with the magnetic field applied perpendicular to the quantum-dot plane, due to the filling of electrons into spin-degenerate orbital states. When the magnetic field is applied parallel to the quantum-dot plane, spin splittings of orbital states are observed and the extracted effective g-factors are found to be different for different orbital states.
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| 8. |
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| 9. |
- Sun, Jie, et al.
(författare)
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Novel nanoelectronic device applications based on the nonlinearity of three-terminal ballistic junctions
- 2007
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Ingår i: Physics of Semiconductors, Pts A and B. - : AIP. - 0094-243X .- 1551-7616. ; 893, s. 1471-1472
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Konferensbidrag (refereegranskat)abstract
- Nanometer-scale electron devices containing three-terminal ballistic junctions are fabricated by electron-beam lithography on InP/InGaAs two-dimensional electron gas materials. Based on the intrinsic nonlinearity of the devices, frequency mixer, phase detector and RS flip-flop memory functioning at room temperature are successfully achieved. The devices have simple structure layout and small size, and are expected to function at high speed.
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| 10. |
- Sun, Jie, et al.
(författare)
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Novel room-temperature functional analogue and digital nanoelectronic circuits based on three-terminal ballistic junctions and planar quantum-wire transistors
- 2008
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Ingår i: Journal of Physics: Conference Series. - : IOP Publishing. - 1742-6596 .- 1742-6588. ; 100, s. 052073-052073
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Konferensbidrag (refereegranskat)abstract
- Three-Terminal ballistic junctions (TBJs) and planar quantum-wire transistors (QWTs) are emerging nanoelectronic devices with various novel electrical properties. In this work, we realize novel nanoelectronic analogue and digital circuits with TBJs and planar QWTs made on In0.75Ga0.25As/InP two-dimensional electron gas (2DEG) material. First we show that a single TBJ can work as a frequency mixer or a phase detector. Second, we fabricate an integrated nanostructure containing two planar QWTs, which can be used as an RS flip-flop element. Third, we make a nanoelectronic circuit by the integration of two TBJs and two planar QWTs. This circuit shows the RS flip-flop functionalities with much larger noise margins in both high and low level inputs. All measurements in this work are done at room temperature.
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