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Miniaturization of ...
Miniaturization of CMOS
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- Radamson, Henry H. (författare)
- Mittuniversitetet,Institutionen för elektronikkonstruktion,Chinese Acad Sci, Beijing, Peoples R China; Univ Chinese Acad Sci, Beijing, Peoples R China
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- He, Xiaobin (författare)
- Chinese Acad Sci, Beijing, Peoples R China
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- Zhang, Qingzhu (författare)
- Chinese Acad Sci, Beijing, Peoples R China; Gen Res Inst Nonferrous Met, Beijing, Peoples R China
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- Liu, Jonbiao (författare)
- Chinese Acad Sci, Beijing, Peoples R China
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- Cui, Hushan (författare)
- Beihang Univ, BDBC, Beijing, Peoples R China
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- Xiang, Jinjuan (författare)
- Chinese Acad Sci, Beijing, Peoples R China
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- Kong, Zhenzhen (författare)
- Chinese Acad Sci, Beijing, Peoples R China
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- Xiong, Wenjuan (författare)
- Chinese Acad Sci, Beijing, Peoples R China; Univ Chinese Acad Sci, Beijing, Peoples R China
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- Li, Junjie (författare)
- Chinese Acad Sci, Beijing, Peoples R China; Univ Chinese Acad Sci, Beijing, Peoples R China
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- Gao, Jianfeng (författare)
- Chinese Acad Sci, Beijing, Peoples R China
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- Yang, Hong (författare)
- Chinese Acad Sci, Beijing, Peoples R China; Univ Chinese Acad Sci, Beijing, Peoples R China
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- Gu, Shihai (författare)
- Chinese Acad Sci, Beijing, Peoples R China; Univ Chinese Acad Sci, Beijing, Peoples R China
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- Zhao, Xuewei (författare)
- Chinese Acad Sci, Beijing, Peoples R China; Univ Sci & Technol China, Hefei, Anhui, Peoples R China
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- Du, Yong (författare)
- Chinese Acad Sci, Beijing, Peoples R China; Univ Chinese Acad Sci, Beijing, Peoples R China
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- Yu, Jiahan (författare)
- Chinese Acad Sci, Beijing, Peoples R China
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- Wang, Guilei (författare)
- Chinese Acad Sci, Beijing, Peoples R China; Univ Chinese Acad Sci, Beijing, Peoples R China
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(creator_code:org_t)
- 2019-04-30
- 2019
- Engelska.
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Ingår i: Micromachines. - : MDPI AG. - 2072-666X. ; 10:5
- Relaterad länk:
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https://doi.org/10.3...
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https://miun.diva-po... (primary) (Raw object)
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https://www.mdpi.com...
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https://urn.kb.se/re...
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https://doi.org/10.3...
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Abstract
Ämnesord
Stäng
- When the international technology roadmap of semiconductors (ITRS) started almost five decades ago, the metal oxide effect transistor (MOSFET) as units in integrated circuits (IC) continuously miniaturized. The transistor structure has radically changed from its original planar 2D architecture to today's 3D Fin field-effect transistors (FinFETs) along with new designs for gate and source/drain regions and applying strain engineering. This article presents how the MOSFET structure and process have been changed (or modified) to follow the More Moore strategy. A focus has been on methodologies, challenges, and difficulties when ITRS approaches the end. The discussions extend to new channel materials beyond the Moore era.
Ämnesord
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Nyckelord
- FinFETs
- CMOS
- device processing
- integrated circuits
Publikations- och innehållstyp
- ref (ämneskategori)
- art (ämneskategori)
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Till lärosätets databas
- Av författaren/redakt...
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Radamson, Henry ...
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He, Xiaobin
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Zhang, Qingzhu
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Liu, Jonbiao
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Cui, Hushan
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Xiang, Jinjuan
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Kong, Zhenzhen
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Xiong, Wenjuan
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Li, Junjie
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Gao, Jianfeng
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Yang, Hong
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Gu, Shihai
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Zhao, Xuewei
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Du, Yong
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Yu, Jiahan
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Wang, Guilei
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