| 1. |
- Hammar, Mattias, et al.
(författare)
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Room-temperature operation of 980-nm transistor-vertical-cavity surface-emitting lasers
- 2013
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Ingår i: 2013 IEEE 6th International Conference on Advanced Infocomm Technology, ICAIT 2013. - : IEEE. - 9781479904655 ; , s. 141-142
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Konferensbidrag (refereegranskat)abstract
- We report on the design, fabrication and characterization of pnp-type 980-nm transistor-vertical-cavity surface-emitting lasers (T-VCSELs). Using an epitaxial regrowth process and a triple-intracavity current injection scheme we demonstrate static performance levels quite comparable to those of conventional VCSELs, including sub-mA threshold base current, mW-range output power and continuous-wave operation at least up to 50°C.
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| 2. |
- Xiang, Yu, et al.
(författare)
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Minority current distribution in InGaAs/GaAs transistor-vertical-cavity surface-emitting laser
- 2013
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Ingår i: Applied Physics Letters. - : American Institute of Physics (AIP). - 0003-6951 .- 1077-3118. ; 102:19, s. 191101-
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Tidskriftsartikel (refereegranskat)abstract
- We compare experimental data with three-dimensional numerical calculations of the local minority current in an InGaAs/GaAs transistor vertical-cavity surface-emitting laser at different bias levels. It is demonstrated that lateral potential variations within the device greatly affect the transistor operating conditions. As a result, it locally operates in the active mode in the center of the device, allowing for efficient stimulated recombination, while it globally operates in the saturation regime as reflected by the measured current-voltage characteristics. This allows for excellent laser performance, including mW-range output power, sub-mA threshold base current, and continuous-wave operation well above room temperature.
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| 3. |
- Yu, Xingang, et al.
(författare)
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1.3 μm Buried Tunnel junction InGaAs/GaAs VCSELs
- 2013
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Konferensbidrag (övrigt vetenskapligt/konstnärligt)abstract
- Vertical cavity surface emitting lasers (VCSELs) working at 1.3μm are potential cost- and power-efficient sources for medium-range optical networks. However, they are still waiting for their commercial breakthrough due to several technological challenges related to the need for complex materials systems and/or fabrication methods. Nevertheless, many efforts have been devoted to solve the problem, also yielding some excellent results. Alter-native approaches we have previously presented are In-GaAs/GaAs 1.3-μm VCSELs based on oxidation con-finement or with an epitaxial regrowth of a pnp block-ing structure. Here we demonstrate a buried-tunnel junction (BTJ) current confinement scheme to improve the static and dynamic performance.
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| 4. |
- Yu, Xingang, et al.
(författare)
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Room-temperature operation of transistor vertical-cavity surface-emitting laser
- 2013
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Ingår i: Electronics Letters. - : Institution of Engineering and Technology (IET). - 0013-5194 .- 1350-911X. ; 49:3, s. 208-209
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Tidskriftsartikel (refereegranskat)abstract
- The first room-temperature operation of a transistor vertical-cavity surface-emitting laser (T-VCSEL) is demonstrated. Fabricated using an epitaxial regrowth process, the T-VCSEL is electrically a pnp-type bipolar junction transistor and consists of an undoped AlGaAs/GaAs bottom DBR, an InGaAs triple-quantum-well active layer, an Si/SiO2 dielectric top DBR, and an intracavity contacting scheme with three electrical terminals. The output power is controlled by the base current in combination with the emitter-collector voltage, showing a voltage-controlled operation mode. A low threshold base-current of 0.8 mA and an output power of 1.8 mW have been obtained at room temperature. Continuous-wave operation was performed up to 50 degrees C.
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