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Träfflista för sökning "WFRF:(Yuan Kai) srt2:(2020-2024)"

Sökning: WFRF:(Yuan Kai) > (2020-2024)

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1.
  • Beal, Jacob, et al. (författare)
  • Robust estimation of bacterial cell count from optical density
  • 2020
  • Ingår i: Communications Biology. - : Springer Science and Business Media LLC. - 2399-3642. ; 3:1
  • Tidskriftsartikel (refereegranskat)abstract
    • Optical density (OD) is widely used to estimate the density of cells in liquid culture, but cannot be compared between instruments without a standardized calibration protocol and is challenging to relate to actual cell count. We address this with an interlaboratory study comparing three simple, low-cost, and highly accessible OD calibration protocols across 244 laboratories, applied to eight strains of constitutive GFP-expressing E. coli. Based on our results, we recommend calibrating OD to estimated cell count using serial dilution of silica microspheres, which produces highly precise calibration (95.5% of residuals <1.2-fold), is easily assessed for quality control, also assesses instrument effective linear range, and can be combined with fluorescence calibration to obtain units of Molecules of Equivalent Fluorescein (MEFL) per cell, allowing direct comparison and data fusion with flow cytometry measurements: in our study, fluorescence per cell measurements showed only a 1.07-fold mean difference between plate reader and flow cytometry data.
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2.
  • Mahajan, Anubha, et al. (författare)
  • Multi-ancestry genetic study of type 2 diabetes highlights the power of diverse populations for discovery and translation
  • 2022
  • Ingår i: Nature Genetics. - : Springer Nature. - 1061-4036 .- 1546-1718. ; 54:5, s. 560-572
  • Tidskriftsartikel (refereegranskat)abstract
    • We assembled an ancestrally diverse collection of genome-wide association studies (GWAS) of type 2 diabetes (T2D) in 180,834 affected individuals and 1,159,055 controls (48.9% non-European descent) through the Diabetes Meta-Analysis of Trans-Ethnic association studies (DIAMANTE) Consortium. Multi-ancestry GWAS meta-analysis identified 237 loci attaining stringent genome-wide significance (P < 5 x 10(-9)), which were delineated to 338 distinct association signals. Fine-mapping of these signals was enhanced by the increased sample size and expanded population diversity of the multi-ancestry meta-analysis, which localized 54.4% of T2D associations to a single variant with >50% posterior probability. This improved fine-mapping enabled systematic assessment of candidate causal genes and molecular mechanisms through which T2D associations are mediated, laying the foundations for functional investigations. Multi-ancestry genetic risk scores enhanced transferability of T2D prediction across diverse populations. Our study provides a step toward more effective clinical translation of T2D GWAS to improve global health for all, irrespective of genetic background. Genome-wide association and fine-mapping analyses in ancestrally diverse populations implicate candidate causal genes and mechanisms underlying type 2 diabetes. Trans-ancestry genetic risk scores enhance transferability across populations.
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4.
  • Abbafati, Cristiana, et al. (författare)
  • 2020
  • Tidskriftsartikel (refereegranskat)
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5.
  • Biurrun, Idoia, et al. (författare)
  • Benchmarking plant diversity of Palaearctic grasslands and other open habitats
  • 2021
  • Ingår i: Journal of Vegetation Science. - Oxford : John Wiley & Sons. - 1100-9233 .- 1654-1103. ; 32:4
  • Tidskriftsartikel (refereegranskat)abstract
    • Journal of Vegetation Science published by John Wiley & Sons Ltd on behalf of International Association for Vegetation Science.Aims: Understanding fine-grain diversity patterns across large spatial extents is fundamental for macroecological research and biodiversity conservation. Using the GrassPlot database, we provide benchmarks of fine-grain richness values of Palaearctic open habitats for vascular plants, bryophytes, lichens and complete vegetation (i.e., the sum of the former three groups). Location: Palaearctic biogeographic realm. Methods: We used 126,524 plots of eight standard grain sizes from the GrassPlot database: 0.0001, 0.001, 0.01, 0.1, 1, 10, 100 and 1,000 m2 and calculated the mean richness and standard deviations, as well as maximum, minimum, median, and first and third quartiles for each combination of grain size, taxonomic group, biome, region, vegetation type and phytosociological class. Results: Patterns of plant diversity in vegetation types and biomes differ across grain sizes and taxonomic groups. Overall, secondary (mostly semi-natural) grasslands and natural grasslands are the richest vegetation type. The open-access file ”GrassPlot Diversity Benchmarks” and the web tool “GrassPlot Diversity Explorer” are now available online (https://edgg.org/databases/GrasslandDiversityExplorer) and provide more insights into species richness patterns in the Palaearctic open habitats. Conclusions: The GrassPlot Diversity Benchmarks provide high-quality data on species richness in open habitat types across the Palaearctic. These benchmark data can be used in vegetation ecology, macroecology, biodiversity conservation and data quality checking. While the amount of data in the underlying GrassPlot database and their spatial coverage are smaller than in other extensive vegetation-plot databases, species recordings in GrassPlot are on average more complete, making it a valuable complementary data source in macroecology. © 2021 The Authors.
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6.
  • Chai, Gaoda, et al. (författare)
  • Deciphering the Role of Chalcogen-Containing Heterocycles in Nonfullerene Acceptors for Organic Solar Cells
  • 2020
  • Ingår i: ACS Energy Letters. - : AMER CHEMICAL SOC. - 2380-8195. ; 5:11, s. 3415-3425
  • Tidskriftsartikel (refereegranskat)abstract
    • The field of organic solar cells has experienced paradigm-shifting changes in recent years because of the emergence of nonfullerene acceptors (NFAs). It is critically important to gain more insight into the structure-property relationship of the emerging A-DAD-A-type NFAs. In this Letter, a family of NFAs named BPF-4F, BPT-4F, and BPS-4F incorporating various chalcogen-containing heterocycles, i.e., furan, thiophene, and selenophene, respectively, was designed and synthesized. These NFAs exhibited dramatic differences in their photovoltaic performances with device efficiencies of 16.8% achieved by the thiophene-based cells, which was much higher than the furan-based ones (12.6%). In addition, the selenophene-based NFA showed a red-shifted absorption relative to the furan- and thiophene-based ones and obtained a decent efficiency of 16.3% owing to an improved J(SC). The reasons why these NFAs performed differently are systematically studied by comparing their optoelectronic properties and film morphology, which provides new understandings of the molecular design of high-performance NFAs.
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7.
  • Chen, Ding-Yuan, et al. (författare)
  • Impact of the Channel Thickness on Electron Confinement in MOCVD-Grown High Breakdown Buffer-Free AlGaN/GaN Heterostructures
  • 2023
  • Ingår i: Physica Status Solidi (A) Applications and Materials Science. - : Wiley. - 1862-6319 .- 1862-6300. ; 220:16
  • Tidskriftsartikel (refereegranskat)abstract
    • The 2D electron gas (2DEG) confinement on high electron mobility transistor (HEMT) heterostructures with a thin undoped GaN channel layer on the top of a grain-boundary-free AlN nucleation layer is studied. This is the first time demonstration of a buffer-free epi-structure grown with metal-organic chemical vapor deposition with thin GaN channel thicknesses, ranging from 250 to 150 nm, without any degradation of the structural quality and 2DEG properties. The HEMTs with a gate length of 70 nm exhibit good DC characteristics with peak transconductances of 500 mS mm(-1) and maximum saturated drain currents above 1 A mm(-1). A thinner GaN channel layer improves 2DEG confinement because of the enhanced effectiveness of the AlN nucleation layer acting as a back-barrier. An excellent drain-induced barrier lowering of only 20 mV V-1 at a V-DS of 25 V and an outstanding critical electric field of 0.95 MV cm(-1) are demonstrated. Good large-signal performance at 28 GHz with output power levels of 2.0 and 3.2 W mm(-1) and associated power-added efficiencies of 56% and 40% are obtained at a V-DS of 15 and 25 V, respectively. These results demonstrate the potential of sub-100 nm gate length HEMTs on a buffer-free GaN-on-SiC heterostructure.
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8.
  • Chen, Xian-Kai, et al. (författare)
  • A unified description of non-radiative voltage losses in organic solar cells
  • 2021
  • Ingår i: Nature Energy. - : Springer Nature. - 2058-7546. ; 6:8, s. 799-806
  • Tidskriftsartikel (refereegranskat)abstract
    • Organic solar cells based on non-fullerene acceptors have enabled high efficiencies yet their charge dynamics and its impact on the photovoltaic parameters are not fully understood. Now, Chen et al. provide a general description of non-radiative voltage losses in both fullerene and non-fullerene solar cells. Recent advances in organic solar cells based on non-fullerene acceptors (NFAs) come with reduced non-radiative voltage losses (Delta V-nr). Here we show that, in contrast to the energy-gap-law dependence observed in conventional donor:fullerene blends, the Delta V-nr values in state-of-the-art donor:NFA organic solar cells show no correlation with the energies of charge-transfer electronic states at donor:acceptor interfaces. By combining temperature-dependent electroluminescence experiments and dynamic vibronic simulations, we provide a unified description of Delta V-nr for both fullerene- and NFA-based devices. We highlight the critical role that the thermal population of local exciton states plays in low-Delta V-nr systems. An important finding is that the photoluminescence yield of the pristine materials defines the lower limit of Delta V-nr. We also demonstrate that the reduction in Delta V-nr (for example, <0.2 V) can be obtained without sacrificing charge generation efficiency. Our work suggests designing donor and acceptor materials with high luminescence efficiency and complementary optical absorption bands extending into the near-infrared region.
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9.
  • Conti, David, V, et al. (författare)
  • Trans-ancestry genome-wide association meta-analysis of prostate cancer identifies new susceptibility loci and informs genetic risk prediction
  • 2021
  • Ingår i: Nature Genetics. - : Springer Nature. - 1061-4036 .- 1546-1718. ; 53:1, s. 65-75
  • Tidskriftsartikel (refereegranskat)abstract
    • Prostate cancer is a highly heritable disease with large disparities in incidence rates across ancestry populations. We conducted a multiancestry meta-analysis of prostate cancer genome-wide association studies (107,247 cases and 127,006 controls) and identified 86 new genetic risk variants independently associated with prostate cancer risk, bringing the total to 269 known risk variants. The top genetic risk score (GRS) decile was associated with odds ratios that ranged from 5.06 (95% confidence interval (CI), 4.84-5.29) for men of European ancestry to 3.74 (95% CI, 3.36-4.17) for men of African ancestry. Men of African ancestry were estimated to have a mean GRS that was 2.18-times higher (95% CI, 2.14-2.22), and men of East Asian ancestry 0.73-times lower (95% CI, 0.71-0.76), than men of European ancestry. These findings support the role of germline variation contributing to population differences in prostate cancer risk, with the GRS offering an approach for personalized risk prediction. A meta-analysis of genome-wide association studies across different populations highlights new risk loci and provides a genetic risk score that can stratify prostate cancer risk across ancestries.
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10.
  • Ding Yuan, Chen, 1991, et al. (författare)
  • Impact of in situ NH3 pre-treatment of LPCVD SiN passivation on GaN HEMT performance
  • 2022
  • Ingår i: Semiconductor Science and Technology. - : IOP Publishing. - 1361-6641 .- 0268-1242. ; 37:3
  • Tidskriftsartikel (refereegranskat)abstract
    • The impact on the performance of GaN high electron mobility transistors (HEMTs) of in situ ammonia (NH3) pre-treatment prior to the deposition of silicon nitride (SiN) passivation with low-pressure chemical vapor deposition (LPCVD ) is investigated. Three different NH3 pre-treatment durations (0, 3, and 10 min) were compared in terms of interface properties and device performance. A reduction of oxygen (O) at the interface between SiN and epi-structure is detected by scanning transmission electron microscopy (STEM )-electron energy loss spectroscopy (EELS) measurements in the sample subjected to 10 min of pre-treatment. The samples subjected to NH3 pre-treatment show a reduced surface-related current dispersion of 9% (compared to 16% for the untreated sample), which is attributed to the reduction of O at the SiN/epi interface. Furthermore, NH3 pre-treatment for 10 min significantly improves the current dispersion uniformity from 14.5% to 1.9%. The reduced trapping effects result in a high output power of 3.4 W mm(-1) at 3 GHz (compared to 2.6 W mm(-1) for the untreated sample). These results demonstrate that the in situ NH3 pre-treatment before LPCVD of SiN passivation is critical and can effectively improves the large-signal microwave performance of GaN HEMTs.
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