| 1. |
- Ablikim, M., et al.
(author)
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Measurements of (XcJ)-> K+K-K+K- decays
- 2006
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In: Physics Letters B. - : Elsevier BV. - 0370-2693 .- 1873-2445. ; 642:3, s. 197-202
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Journal article (peer-reviewed)abstract
- Using 14M psi(2S) events taken with the BESII detector, chi(cJ) -> 2(K+K-) decays are studied. For the four-kaon final state, the branching fractions are B(chi(c0,1,2) ->.2(K+K-)) = (3.48 +/- 0.23 +/- 0.47) x 10(-3), (0.70 +/- 0.13 +/- 0.10) x 10(-3), and (2.17 +/- 0.20 +/- 0.31) x 10(-3). For the phi K+K- final state, the branching fractions, which are measured for the first time, are B(chi(c0,1,2) -> phi K+K-) = (1.03 +/- 0.22 +/- 0.15) x 10(-3), (0.46 +/- 0.16 +/- 0.06) x 10(-3), and (1.67 +/- 0.26 +/- 0.24) x 10(-4). For the phi phi final state, B(chi(c0,2) -> phi phi) = (0.94 +/- 0.21 +/- 0.13) x 10(-3) and (1.70 +/- 0.30 +/- 0.25) x 10(-3).
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| 5. |
- Wang, S M, et al.
(author)
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Dilute nitrides and 1.3 mu m GaInNAs quantum well lasers on GaAs
- 2009
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In: MICROELECTRONICS JOURNAL. - : Elsevier BV. - 0026-2692. ; 40:3, s. 386-391
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Journal article (peer-reviewed)abstract
- We present epitaxial growth of GaInNAs on GaAs by molecular beam epitaxy (MBE) using analog, digital and N irradiation methods. It is possible to realize GaInNAs quantum wells (QWs) with a maximum substitutional N concentration up to 6% and a strong light emission up to 1.71 mu m at 300 K. High quality 1.3 mu m GaInNAs multiple QW edge emitting laser diodes have been demonstrated. The threshold current density (for a cavity of 100 x 1000 mu m(2)) is 300, 300, 400 and 940 A/cm(2) for single, double, triple and quadruple QW lasers, respectively. The maximum 3 dB bandwidth reaches 17 GHz and high-speed transmission at 10 Gb/s up to 110 degrees C under a constant voltage has been demonstrated.
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| 6. |
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| 7. |
- Wang, S M, et al.
(author)
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Growth of GaInNAs and 1.3 mu m edge emitting lasers by molecular beam epitaxy
- 2009
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In: JOURNAL OF CRYSTAL GROWTH. - : Elsevier BV. - 0022-0248. ; 311:7, s. 1863-1867
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Journal article (peer-reviewed)abstract
- We show that the use of a low growth rate combined with low N flux and RF power during molecular beam epitaxy (MBE) growth of dilute nitrides can efficiently enhance N incorporation while retaining good optical quality. A maximum light emission wavelength of 1.44 and 1.71 mu m has been obtained at 300 K from GaNAs and GaInNAs quantum wells, respectively. We demonstrate high-performance 1.3 pm GaInNAs multiple quantum well edge emitting lasers with record low threshold current densities, a 3 dB modulation bandwidth of 17 GHz at 300 K and capability of being modulated at 10 Gbit/s up to 110 degrees C without extra coolers. Our results show that MBE is an epitaxial technology suitable for the growth of dilute nitride materials and devices.
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| 8. |
- Yu, Meijuan, et al.
(author)
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3D local structure around Zn in Kti11p as a representative Zn-(Cys)4 motif as obtained by MXAN
- 2008
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In: Biochemical and Biophysical Research Communications - BBRC. - : Elsevier BV. - 0006-291X .- 1090-2104. ; 374:1, s. 28-32
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Journal article (peer-reviewed)abstract
- Zinc is an important component of many proteins that play key roles in transcription, translation, and catalysis. Kti11p, DESR1, both belonging to a protein family characterized by a CSL zinc finger domain, and the co-catalytic zinc-protein PML containing a Zn2+ binding domain called RING or C3HC4 finger are all structurally determined by NMR although the zinc sites are silent to this spectroscopical method. The comparison of X-ray absorption near-edge spectroscopy (XANES) data for the three proteins demonstrates that fingerprints effect is a reliable method for a primary characterization of ligand species. Ab initio full MS Calculations performed by MAN are applied to obtain chemical and stereo structural information around the Zn ion in Kti11p. For the first time this high-spatial resolution technique confirms the formation of a stable Zn tetrahedral configuration with four sulfur ligands, and returns extremely accurate bond angle information between ligands.
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| 9. |
- Adnane, Bouchaib, et al.
(author)
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Origin of photoresponse at 8-14 μm in stacks of self-assembled SiGe/Si quantum dots
- 2009
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In: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X.
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Journal article (other academic/artistic)abstract
- A normal incidence photodetector operating at 8-14 μm is demonstrated using p-type δ-doped SiGe dot multilayer structures grown by molecular beam epitaxy on Si(001) substrates. Based on the experimental results of photoluminescence and photoluminescence excitation spectroscopies together with numerical analysis, the origin of the measured photocurrent was attributed to intersubband optical transitions between the heavy hole and light hole states of the valence band of the self-assembled SiGe dots and subsequent lateral transport of photo-excited carriers in the conduction channels formed by Ge wetting layers.
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