| 1. |
- de Graauw, Th., et al.
(författare)
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The Herschel-Heterodyne Instrument for the Far-Infrared (HIFI)
- 2010
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Ingår i: Astronomy and Astrophysics. - : EDP Sciences. - 0004-6361 .- 1432-0746. ; 518, s. L6-
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Tidskriftsartikel (refereegranskat)abstract
- Aims: This paper describes the Heterodyne Instrument for the Far-Infrared (HIFI) that was launched onboard ESA's Herschel Space Observatory in May 2009. Methods: The instrument is a set of 7 heterodyne receivers that are electronically tuneable, covering 480-1250 GHz with SIS mixers and the 1410-1910 GHz range with hot electron bolometer (HEB) mixers. The local oscillator (LO) subsystem comprises a Ka-band synthesizer followed by 14 chains of frequency multipliers and 2 chains for each frequency band. A pair of auto-correlators and a pair of acousto-optical spectrometers process the two IF signals from the dual-polarization, single-pixel front-ends to provide instantaneous frequency coverage of 2 × 4 GHz, with a set of resolutions (125 kHz to 1 MHz) that are better than 0.1 km s-1. Results: After a successful qualification and a pre-launch TB/TV test program, the flight instrument is now in-orbit and completed successfully the commissioning and performance verification phase. The in-orbit performance of the receivers matches the pre-launch sensitivities. We also report on the in-orbit performance of the receivers and some first results of HIFI's operations. Herschel is an ESA space observatory with science instruments provided by European-led Principal Investigator consortia and with important participation from NASA.
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| 2. |
- Abbasi, Morteza, 1982, et al.
(författare)
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A 80-95 GHz direct quadrature modulator in SiGe technology
- 2014
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Ingår i: SiRF 2014 - 2014 IEEE 14th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems. - 9781479915231 ; , s. 56-58
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Konferensbidrag (refereegranskat)abstract
- A direct carrier IQ modulator operating in the 80-95 GHz frequency range is presented. The circuit is designed and fabricated in 0.18μm SiGe technology with 170/250 GHz fT/fmax. The modulator is based on double-balanced gilbert mixer cells with on-chip quadrature LO phase shifter and consumes 23mW DC power. In single-sideband operation, the chip exhibits up to 3 dB conversion gain below 85 GHz and -1± 0.5 dB up to 95 GHz. The image rejection ratio and LO-RF isolation are as high as 25 dB and 43 dB respectively. The modulator can operate with 10 GHz of modulation bandwidth and delivers -7 dBm power in saturation. For demonstration, the circuit is tested and shown to be capable of transmitting 4Gbps BPSK signal with NRZ rectangular pulses. The active chip area is 480μm× 260μm. © 2014 IEEE.
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| 3. |
- Abbasi, Morteza, 1982, et al.
(författare)
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A broadband differential cascode power amplifier in 45 nm CMOS for high-speed 60 GHz system-on-chip
- 2010
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Ingår i: 2010 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2010; Anaheim, CA; 23 May 2010 through 25 May 2010. - 1529-2517. ; , s. 978-142446242-1-
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Konferensbidrag (refereegranskat)abstract
- A compact two-stage differential cascode power amplifier is designed and fabricated in 45 nm standard LP CMOS. The cascode configuration, with the common gate device placed in a separate P-well, provides reliable operating condition for the devices. The amplifier shows 20 dB small-signal gain centered at 60 GHz with a flat frequency response and 1-dB bandwidth of 10 GHz. The broadband large-signal operation is also ensured by providing constant load resistance to both stages over the entire band and coupling them with a dual resonance matching network. The chip delivers 11.2 dBm output power at 1-dB compression and up to 14.5 dBm power in saturation. The power amplifier operates with 2 V supply and draws 90 mA total current which results in 14.4% maximum PAE. The output third order intercept point is measured to be 18 dBm for two-tone measurement at 60 GHz with 0.5 GHz, 1 GHz and 2 GHz frequency separations. © 2010 IEEE.
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| 4. |
- Abbasi, Morteza, 1982, et al.
(författare)
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A direct conversion quadrature transmitter with digital interface in 45 nm CMOS for high-speed 60 GHz communications
- 2011
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Ingår i: Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium. Baltimore, 5-7 June 2011. - 1529-2517. - 9781424482931
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Konferensbidrag (refereegranskat)abstract
- A compact 60 GHz direct conversion quadrature transmitter is designed and fabricated in 45 nm standard LP CMOS. The transmitter features an integrated power amplifier with continuous output level control and interfaces binary data signals with nominal peak-to-peak voltage swing of 300 mV. The highest measured modulation bandwidth is limited by the measurement setup to 4 GHz but is simulated to be as high as 10 GHz. In single sideband up-converting operation mode, the measured image suppression ratio is 22 dB with 36 dB of carrier suppression corresponding to approximately 8% EVM in the output signal constellation. The output RF frequency can be from 54 GHz to 66 GHz to accommodate several channels and the output power can be adjusted from -3 dBm to 10 dBm. The chip is operated from a 2 V supply and draws 180 mA current.
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| 5. |
- Abbasi, Morteza, 1982, et al.
(författare)
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Direct carrier quadrature modulator and Demodulator MMICs for 60 GHz gigabit wireless communications
- 2011
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Ingår i: Asia-Pacific Microwave Conference Proceedings (APMC 2011; Melbourne, VIC; 5 - 8 December 2011). - 9780858259744 ; , s. 1134-1137
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Konferensbidrag (övrigt vetenskapligt/konstnärligt)abstract
- A 60 GHz direct carrier quadrature modulator is designed and fabricated in 0.15 μm mHEMT technology. The design is based on passive mixers and therefore reciprocal which makes it possible to be used both as modulator and demodulator. The modulator has an input bandwidth of 0-5 GHz on each of the I and Q ports and an RF bandwidth of 53-68 GHz. Carrier leakage to the output port is eliminated by addition of an inductive path from the LO port to the RF port. The modulator requires 5 dBm LO power and can output up to -6 dBm RF power in linear region and up to -4 dBm when driven into saturation. When operated as an SSB mixer, the conversion loss is measured to be 11 dB and image and LO signals are suppressed by as much as 30 dB compared to the desired signal. For demonstration, a pair of the presented modulator/demodulator is used to transmit 7Gbps BPSK signal over 1m and 10Gbps QPSK signal over 0.5m wireless link.
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| 6. |
- Abbasi, Morteza, 1982, et al.
(författare)
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Single-Chip 220-GHz Active Heterodyne Receiver and Transmitter MMICs With On-Chip Integrated Antenna
- 2011
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Ingår i: IEEE Transactions on Microwave Theory and Techniques. - 0018-9480 .- 1557-9670. ; 59:2, s. 466-478
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Tidskriftsartikel (refereegranskat)abstract
- This paper presents the design and characterization of single-chip 220-GHz heterodyne receiver (RX) and transmitter (TX) monolithic microwave integrated circuits (MMICs) with integrated antennas fabricated in 0.1-mu m GaAs metamorphic high electron-mobility transistor technology. The MMIC receiver consists of a modified square-slot antenna, a three-stage low-noise amplifier, and a sub-harmonically pumped resistive mixer with on-chip local oscillator frequency multiplication chain. The transmitter chip is the dual of the receiver chip by inverting the direction of the RF amplifier. The chips are mounted on 5-mm silicon lenses in order to interface the antenna to the free space and are packaged into two separate modules. The double-sideband noise figure (NF) and conversion gain of the receiver module are measured with the Y-factor method. The total noise temperature of 1310 +/- 100K(corresponding to an NF of 7.4 dB), including the losses in the lens and antenna, is measured at 220 GHz with a respective conversion gain of 3.5 dB. The radiated continuous-wave power from the transmitter module is measured to be up to -6 dBm from 212 to 226 GHz. The transmitter and receiver are linked in a quasi-optical setup and the IF to IF response is measured to be flat up to 10 GHz. This is verified to be usable for transmission of a 12.5-Gb/s data stream between the transmit and receive modules over a 0.5-m wireless link. The modules operate with a 1.3-V supply and each consume 110-mW dc power. The presented 220-GHz integrated circuits and modules can be used in a variety of applications, including passive and active imaging, as well as high-speed data communications. To the best of our knowledge, these MMICs are the highest frequency single-chip low-noise heterodyne receiver and transmitter pair reported to date.
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| 7. |
- Andersson, Christer, 1982, et al.
(författare)
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A SiC Varactor With Large Effective Tuning Range for Microwave Power Applications
- 2011
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Ingår i: IEEE Electron Device Letters. - : Institute of Electrical and Electronics Engineers (IEEE). - 0741-3106 .- 1558-0563. ; 32:6, s. 788-790
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Tidskriftsartikel (refereegranskat)abstract
- SiC Schottky diode varactors have been fabricated for use in microwave power applications, specifically the dynamic load modulation of power amplifiers. A custom doping profile has been employed to spread the C(V) over a large bias voltage range, thereby increasing the effective tuning range under large voltage swing conditions. The small-signal tuning range is approximately six, and punch through is reached at a bias voltage of -60 V, while the breakdown voltage is on the order of -160 V. An interdigitated layout is utilized together with a self-aligned Schottky anode etch process to improve the Q-factor at 2 GHz, which is 20 at zero bias and approximately 160 at punch through.
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| 8. |
- Bao, M., et al.
(författare)
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14 Gbps on-off keying modulator and demodulator for D-band communication
- 2014
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Ingår i: 2014 IEEE International Wireless Symposium (IWS), 24-26 March 2014, X'ian. - 9781479934034 ; , s. (4 pp)-
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Konferensbidrag (refereegranskat)abstract
- An on-off keying (OOK) modulator and demodulator operating at carrier frequency from 100 GHz to 150 GHz are designed and manufactured in a 0.25 μm InP DHBT Technology. The modulator is based on a switch controlled frequency quadrupler, which is driven by input data and a sinusoid signal source. A power detector consisting of a 4-way power divider and four identical active power detector units is proposed as an OOK demodulator. Combining the output of the detector units enables reducing of the ripple at the output by suppressing the 1st, the 2nd, and the 3rd harmonics due to the phase cancellation. The modulator and demodulator are characterized by on-wafer measurements. As an integrated OOK modulator and demodulator, high data rate transmission up to 14 Gbps is demonstrated. At data rate of 13 Gbps, BER
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| 9. |
- Bao, M., et al.
(författare)
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A 31~61 GHz linear transconductance up-conversion mixer with 15 GHz IF-bandwidth
- 2013
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Ingår i: IEEE MTT-S International Microwave Symposium Digest. - 0149-645X.
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Konferensbidrag (refereegranskat)abstract
- A novel 31-61 GHz up-conversion transconductance mixer is proposed, designed and manufactured in a 0.25 μm InP DHBT technology, which consists of a main and an auxiliary mixer. At large input power, the conversion gain compression of the main mixer is compensated by the gain expansion of the auxiliary mixer; consequently, the linearity of the combined two mixers is improved. The measured output referred 1-dB compression point, OP1dB, is -2.2 dBm to -0.57 dBm in the frequency range, which to the authors' knowledge, is the best obtained among the up-conversion mixers published so far. Moreover, the mixer also demonstrates a broad IF bandwidth of 0~15 GHz, supporting up-conversion of high datarate baseband signals. © 2013 IEEE.
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| 10. |
- Bao, Mingquang, 1962, et al.
(författare)
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A High-Speed Power Detector for D-Band Communication
- 2014
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Ingår i: IEEE Transactions on Microwave Theory and Techniques. - 0018-9480 .- 1557-9670. ; 62:7, s. 1515-1524
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Tidskriftsartikel (refereegranskat)abstract
- A D-band power detector (PD) consisting of a four-way power divider and four identical active PD units is proposed, where four individual PD units are derived by the input signals having the same amplitude, but a 90 degrees phase difference. The outputs of the PD units are combined, to suppress the first, second, and third harmonics due to phase cancellation. Consequently, the ripple at the output is minimized. The proposed PD is designed and manufactured in a 0.25-mu m InP DHBT technology, which is characterized by on-chip measurements with both a sinusoidal signal and a binary amplitude shift-keying modulated signal at a data rate up to 13 Gb/s over different carrier frequencies from 100 to 150 GHz. Measured bit error rate for a 2(7) - 1 pseudorandom binary sequence is less than 10(-12) at the carrier frequency of 120 GHz, and less than 1.7 x 10(-5) at the carrier frequency of 150 GHz. In addition, the proposed PD achieves state-of-the-art power/energy efficiency, which exhibits the lowest energy per bit of 1.1 pJ/bit. Total dc power consumption of the PD is 15 mW.
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