| 1. |
- Hassona, Ahmed Adel, 1988, et al.
(författare)
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A Low-loss D-band Chip-to-Waveguide Transition Using Unilateral Fin-line Structure
- 2018
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Ingår i: IEEE MTT-S International Microwave Symposium Digest. - 0149-645X. ; 2018, s. 390-393
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Konferensbidrag (refereegranskat)abstract
- This paper presents a D-band interconnect realized using unilateral finline structure. The interconnect consists of a microstrip line implemented on a 75μm-thick SiC substrate. The line then couples to a unilateral finline taper that is mounted in the E-plane of a standard WR-6.5 D-band waveguide. The interconnect achieves low insertion loss and covers very wide frequency range. The measured minimum insertion loss is 0.67 dB and the maximum is 2 dB per transition across the entire D-band covering the frequency range 110-170 GHz. The transition does not require any galvanic contacts nor any special processing and can be implemented in any of the commercially available semiconductor technologies. This solution provides low-loss wideband packaging technique that enables millimeter-wave systems assembly using a high-performance simple approach.
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| 2. |
- An, Sining, 1991, et al.
(författare)
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A 40 Gbps DQPSK Modem for Millimeter-wave Communications
- 2016
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Ingår i: Asia-Pacific Microwave Conference Proceedings APMC 2015. ; 1
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Konferensbidrag (refereegranskat)abstract
- A high speed differential quadrature phase shift keying (DQPSK) modulator and demodulator (modem) is presented for data rates up to 40 Gbps, in which the modulator is based on an FPGA and the demodulator is based on analog components. The modem performance has been verified in a lab environment. The targeted application is wireless communications using millimeter-wave bands as a flexible alternative to optical fiber links in next generation mobile networks.
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| 3. |
- An, Sining, 1991, et al.
(författare)
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A Synchronous Baseband Receiver for High-Data-Rate Millimeter-Wave Communication Systems
- 2019
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Ingår i: IEEE Microwave and Wireless Components Letters. - 1558-1764 .- 1531-1309. ; 29:6, s. 412-414
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Tidskriftsartikel (refereegranskat)abstract
- A novel synchronous baseband receiver is presented in this letter. With a pilot tone insertion at the transmitter, the proposed baseband receiver can perform carrier recovery (CR) regardless of modulation scheme and/or baud rate. The synchronous baseband receiver has an analog-digital hybrid structure, where a low-cost digital signal processor controls an analog local oscillator (LO) in frequency and phase to achieve CR. This structure requires only one low-cost analog-to-digital converter (ADC) with a sampling rate of 100 MS/s. A proof-of-concept demonstration at E-band achieves 9-Gb/s 64-quadratic-amplitude modulation (QAM) and 16-Gb/s QPSK transmissions.
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| 4. |
- An, Sining, 1991, et al.
(författare)
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An 8 Gbps E-band QAM Transmitter Using Symbol-based Outphasing Power Combining Technique
- 2017
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Ingår i: Radio-Frequency Integration Technology (RFIT2017). - 9781509040360 ; , s. 150-152
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Konferensbidrag (refereegranskat)abstract
- In millimeter-wave communication systems, generating high output power with high efficiency on the transmitter side is one major challenge. In this paper, a symbol-based outphasing power combining solution has been demonstrated with data rate up to 8 Gbps at an RF frequency of 83.5 GHz. This solution provides 2 dB higher output power compared to the power of two QAM signals at 12% EVM.
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| 5. |
- Bao, Mingquang, 1962, et al.
(författare)
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A 100-145 GHz Area-Efficient Power Amplifier in a 130 nm SiGe Technology
- 2017
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Ingår i: European Microwave Integrated Circuits Conference - Proceedings. - 9782874870484 ; , s. 277-280
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Konferensbidrag (refereegranskat)abstract
- A 6-stage, 8-way combining power amplifier (PA) in a 130 nm SiGe BiCMOS technology is designed and measured. This PA has an output power of 12.5 - 15.5 dBm in a frequency range from 100 GHz to 145 GHz, when the input power is about 2 dBm. The small signal gain is 19 dB and the maximum DC power consumption is 480 mW with a supply voltage of 1.87 V. The peak power added efficiency (PAE) is 6.4% in D-band. T-junctions are utilized to combine and divide millimeter-wave power. To reduce the PA's loss and chip area, neither a Wilkinson power combiner/divider nor a balun is applied. The chip size is 0.53 mm(2) (0.26 mm(2) without pads).
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| 6. |
- Bao, M. Q., et al.
(författare)
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A 110-to-147 GHz Frequency Sixtupler in a 130 nm Sige Bicmos Technology
- 2018
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Ingår i: EuMIC 2018 - 2018 13th European Microwave Integrated Circuits Conference. ; , s. 105-108
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Konferensbidrag (refereegranskat)abstract
- The presented D-band sixtupler consists of a frequency tripler, a frequency doubler, as well as amplifiers. The optimum arrangement for those blocks is investigated. The analysis shows that the tripler should precede the doubler. Furthermore, to extend the bandwidth, an amplifier with an increasing gain versus frequency is applied, to compensate the gain decrease of the tripler. This wideband frequency sixtupler is designed and characterized in a 130 nm SiGe BiCMOS technology. This sixtupler has a bandwidth of 37 GHz (from 110 to 147 GHz), the maximum output power is 4.5 dBm, with a DC power consumption of 310 mW. The maximum power efficiency is 0.9%.
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| 7. |
- Bao, M. Q., et al.
(författare)
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A D-Band Frequency Sixtupler MMIC With Very Low DC Power Consumption
- 2016
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Ingår i: IEEE Microwave and Wireless Components Letters. - : Institute of Electrical and Electronics Engineers (IEEE). - 1558-1764 .- 1531-1309. ; 26:9, s. 726-728
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Tidskriftsartikel (refereegranskat)abstract
- A novel frequency sixtupler is proposed and verified experimentally. It consists of an even-order harmonics generating stage and a mixing stage to convert the 2nd and the 4th harmonics into the 6th harmonic. Transistors in those two stages operate in class-C condition, thus, the sixtupler consumes very low DC power. A proof-of-concept circuit is designed and manufactured in a 0.25 mu m InP DHBT Technology. The sixtupler delivers a maximum output power of -3.5 dBm at 121 GHz at an input power of 7 dBm. Its 3-dB bandwidth of the output power is 25 GHz in the frequency range from 100 GHz to 125 GHz. It demonstrates also more than 10 dBc rejection ratio of the unwanted harmonics in the frequency range from 110 to 125 GHz. The sixtupler consumes a DC power of only 20 mW, which to the authors knowledge, is the lowest among sixtuplers published so far. The sixtupler also achieves a state-of-the-art peak power efficiency of 1.9%.
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| 8. |
- Campion, James, 1989-, et al.
(författare)
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Toward Industrial Exploitation of THz Frequencies : Integration of SiGe MMICs in Silicon-Micromachined Waveguide Systems
- 2019
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Ingår i: IEEE Transactions on Terahertz Science and Technology. - : Institute of Electrical and Electronics Engineers (IEEE). - 2156-342X .- 2156-3446. ; 9:6, s. 624-636
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Tidskriftsartikel (refereegranskat)abstract
- A new integration concept for terahertz (THz) systems is presented in this article, wherein patterned silicon-on-insulator wafers form all DC, IF, and RF networks in a homogeneous medium, in contrast to existing solutions. Using this concept, silicon-micromachined waveguides are combined with silicon germanium (SiGe) monolithic microwave integrated circuits (MMICs) for the first time. All features of the integration platform lie in the waveguide’s H-plane. Heterogeneous integration of SiGe chips is achieved using a novel in-line H-plane transition. As an initial step toward complete systems, we outline the design, fabrication, and assembly of back-to-back transition structures, for use at D-band frequencies (110ï¿œ170 GHz). Special focus is given to the industrial compatibility of all components, fabrication, and assembly processes, with an eye on the future commercialization of THz systems. Prototype devices are assembled via two distinct processes, one of which utilizes semiautomated die-bonding tools. Positional and orientation tolerances for each process are quantified. An accuracy of $\pm \text3.5\; μ \textm$, $\pm \text1.5 °$ is achieved. Measured $S$-parameters for each device are presented. The insertion loss of a single-ended transition, largely due to MMIC substrate losses, is 4.2ï¿œ5.5 dB, with a bandwidth of 25 GHz (135ï¿œ160 GHz). Return loss is in excess of 5 dB. Measurements confirm the excellent repeatability of the fabrication and assembly processes and, thus, their suitability for use in high-volume applications. The proposed integration concept is highly scalable, permitting its usage far into the THz frequency spectrum. This article represents the first stage in the shift to highly compact, low-cost, volume-manufacturable THz waveguide systems.
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| 9. |
- Carpenter, Sona, 1983, et al.
(författare)
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A +14.2 dBm, 90–140 GHz Wideband Frequency Tripler in 250-nm InP DHBT Technology
- 2018
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Ingår i: IEEE Microwave and Wireless Components Letters. - 1558-1764 .- 1531-1309. ; 28:3, s. 239-241
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Tidskriftsartikel (refereegranskat)abstract
- A single-chip active frequency tripler circuit with output at F-band (90-140 GHz) is presented. A common-emitter transistor stage with input and output matching circuits is used to produce the third harmonic, followed by a five-pole bandpass filter and a wideband four-stage power amplifier to amplify and increase the output power. The circuit is implemented in a 250-nm InP double-heterostructure bipolar transistor technology with ft/fmax 350/650 GHz, respectively. The chip achieves a peak output power of 14.2 dBm from 99 to 126 GHz at 2-dBm input power and conversion gain of 13 dB at -2-dBm input power. The measured 3-dB output bandwidth is 51 GHz from 90 to 141 GHz which corresponds to 44.2% relative bandwidth. It demonstrates up to 23-dBc rejection ratio of the first and the second harmonics. The dc power consumption is 156 mW at 2-dBm input power. The chip size is 0.9 × 0.96 mm2 including pads and achieves a power efficiency of 16.7%.
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| 10. |
- Carpenter, Sona, 1983, et al.
(författare)
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A D-Band 48-Gbit/s 64-QAM/QPSK Direct-Conversion I/Q Transceiver Chipset
- 2016
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Ingår i: IEEE Transactions on Microwave Theory and Techniques. - 0018-9480 .- 1557-9670. ; 64:4, s. 1285-1296
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Tidskriftsartikel (refereegranskat)abstract
- This paper presents design and characterization of single-chip 110–170-GHz ( -band) direct conversion in-phase/quadrature-phase (I/Q) transmitter (TX) and receiver (RX) monolithic microwave integrated circuits (MMICs), realized in a 250-nm indium phosphide (InP) double heterojunction bipolar transistor (DHBT) technology. The chipset is suitable for low-power ultrahigh-speed wireless communication and can be used in both homodyne and heterodyne architectures. The TX consists of an I/Q modulator, a frequency tripler, and a broadband three-stage power amplifier. It has single sideband (SSB) conversion gain of 25 dB and saturated output power of 9 dBm. The RX includes an I/Q demodulator with -band amplifier and 3 multiplier chain at the LO port. The RX provides a conversion gain of 26 dB and has noise figure of 9 dB. A 48-Gbit/s direct quadrature phase-shift keying (QPSK) data transmission using a 144-GHz millimeter-wave carrier signal is demonstrated with a bit error rate (BER) of 2.3 and energy efficiency of 7.44 pJ/bit. An 18-Gbit/s 64-quadrature amplitude modulation (QAM) signal was transmitted in heterodyne mode with measured TX-to-RX error vector magnitude (EVM) of less than 6.8% and spectrum efficiency of 3.6 bit/s/Hz. The TX and RX have dc power consumption of 165 and 192 mW, respectively. The chip area of each TX and RX circuit is 1.3mm by 0.9mm
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