| 1. |
- Hassona, Ahmed Adel, 1988, et al.
(författare)
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Compact Low-Loss Chip-to-Waveguide and Chip-to-Chip Packaging Concept Using EBG Structures
- 2021
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Ingår i: IEEE Microwave and Wireless Components Letters. - 1558-1764 .- 1531-1309. ; 31:1, s. 9-12
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Tidskriftsartikel (refereegranskat)abstract
- This letter presents a novel approach for packaging millimeter-wave (mmW) and terahertz (THz) circuits. The proposed technique relies on using an on-chip coupling structure that couples the signal to a quarter-wavelength cavity, which in turn couples to either a waveguide (WG) or another chip. The solution also uses a periodic electromagnetic bandgap (EBG) structure that controls the electromagnetic wave and prevents field leakage in undesired directions. The proposed solution is fabricated and demonstrated at the D-band (110-170 GHz), and the measurement results show that it achieves a minimum insertion loss of 0.8 and a 3-dB bandwidth extending from 124 to 161 GHz. The proposed approach does not require any galvanic contacts and can be used for packaging integrated circuits in WG modules as well as for chip-to-chip communication.
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| 2. |
- An, Sining, 1991, et al.
(författare)
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A D-band Dual-Mode Dynamic Frequency Divider in 130nm SiGe Technology
- 2020
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Ingår i: IEEE Microwave and Wireless Components Letters. - 1558-1764 .- 1531-1309. ; 30:12, s. 1169-1172
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Tidskriftsartikel (refereegranskat)abstract
- In this work, a dual-mode (divide-by-2 and divide-by-3) dynamic frequency divider is presented. A tunable delay gated ring oscillator (TDGRO) topology is proposed for dual-mode operation and bandwidth extension. It uses a 130 nm gate length SiGe BiCMOS technology with ft and fmax of 250 GHz and 370 GHz, respectively. Verification shows that it works at W-band from 70 GHz to 114 GHz (47.8% bandwidth) for divide-by-2 and works at D-band from 105 GHz to 160 GHz (41.5% bandwidth) for divide-by-3. This divider can be used in integrated phase lock loops (PLLs) at millimeter-wave frequencies.
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| 3. |
- An, Sining, 1991, et al.
(författare)
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Coded Pilot Assisted Baseband Receiver for High Data Rate Millimeter-Wave Communications
- 2020
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Ingår i: IEEE Transactions on Microwave Theory and Techniques. - 0018-9480 .- 1557-9670. ; 68:11, s. 4719-4727
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Tidskriftsartikel (refereegranskat)abstract
- A coded pilot assisted high data rate millimeter-wave receiver topology is presented in this article. A low data rate and low power pseudorandom noise (pn) coded pilot signal is superimposed at the transmitter, and the receiver can use such pilot for carrier recovery (CR) and/or channel estimation regardless of modulation scheme or communication data rate. The proposed baseband receiver has an analog-digital hybrid structure where a low-cost digital signal processor is used. This structure requires only a low-cost analog-to-digital converter (ADC) with a sampling rate of 40 MSPS. A proof-of-concept communication link at E-band is demonstrated with 18 Gbps 64-quadrature amplitude modulation (QAM) and 24 Gbps 16-QAM.
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| 4. |
- An, Sining, 1991, et al.
(författare)
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Micrometer Accuracy Phase Modulated Radar for Distance Measurement and Monitoring
- 2020
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Ingår i: IEEE Sensors Journal. - 1558-1748 .- 1530-437X. ; 20:6, s. 2919-2927
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Tidskriftsartikel (refereegranskat)abstract
- An enhanced accuracy random binary phase modulated radar is proposed. It can be used in high accuracy monitoring in manufacturing. Compared with the traditional high accuracy radar using frequency modulated continuous wave (FMCW), the proposed radar system can be used in a multi-user scenario without occupying more bandwidth. A two-step distance estimation method is introduced to estimate the distance. First, the distance estimation accuracy is narrowed down to a half carrier wavelength by analyzing the envelope of the phase modulated signal. Then the carrier phase information increases the distance accuracy to several micrometers. An equalization method is introduced to solve the I/Q imbalance problem. The proposed radar system is demonstrated at a carrier frequency of 80 GHz with a bandwidth of 2 GHz. The measured distance error was within ±7 μm. In addition, a high measurement repetition rate of 500 kHz was reached which is suitable for real-time monitoring in automatic manufacturing.
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| 5. |
- An, Sining, 1991, et al.
(författare)
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Millimeter-Wave Multi-Channel Backscatter Communication and Ranging with an FMCW Radar
- 2022
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Ingår i: Sensors. - : MDPI AG. - 1424-8220. ; 22:19
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Tidskriftsartikel (refereegranskat)abstract
- A multi-channel backscatter communication and radar sensing system is proposed and demonstrated in this paper. Frequency modulated continuous wave (FMCW) radar ranging is integrated with simultaneous uplink data transmission from a self-packaged active radio frequency (RF) tag. A novel package solution is proposed for the RF tag. With the proposed package, the RF tag can transmit a 32-QAM signal up to 2.5 Gbps and QPSK signal up to 8 Gbps. For a multi-tag scenario, we proposed using spread spectrum code to separate the data from each tag. In this case, tags can be placed at arbitrary locations without adjacent channel interference. Proof-of-concept simulations and measurements are demonstrated. A 625 Mbps data rate is achieved in a dual-tag scenario for two tags.
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| 6. |
- Bao, Mingquan, et al.
(författare)
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A 135–183GHz Frequency Sixtupler in 250nm InP HBT
- 2020
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Ingår i: IEEE MTT-S International Microwave Symposium Digest. - 0149-645X. ; 2020, s. 480-483
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Konferensbidrag (refereegranskat)abstract
- A technique to design a broadband two-stage frequency tripler is proposed. The 1 st and the 2 nd harmonics obtained from the first stage are mixed in the second stage, getting the 3 rd harmonic. Between the two stages, there is a two-pole filter which lets the amplitude of the 1 st harmonic increase and the amplitude of the 2 nd harmonic decrease when the frequency increases. Consequently, a large 1 st harmonic is always mixed with a small 2 nd harmonic, and vice versa, which equalizes the amplitude of the mixing product, i.e., the 3 rd harmonic, over a large bandwidth. Together with a frequency doubler and a buffer amplifier, this frequency tripler is used in a frequency sixtupler. A proof-of-concept circuit is designed and implemented in 250 nm indium phosphide (InP) double-heterojunction bipolar transistor (DHBT) technology. For an input power of 6.3 dBm, the sixtupler has an output power between 0 dBm to 4.6 dBm in the output frequency range from 135 GHz to 183 GHz. It exhibits up to 13 dBc rejection ratio of the undesired 4 th , 5 th , and 7th harmonics. The sixtupler consumes a dc power of 100 mW, and achieves a peak power efficiency of 2.5%.
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| 7. |
- Bao, M. Q., et al.
(författare)
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G-band Power Amplifiers in 130 nm InP Technology
- 2021
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Ingår i: EuMIC 2020 - 2020 15th European Microwave Integrated Circuits Conference. ; , s. 85-88
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Konferensbidrag (refereegranskat)abstract
- Two G-band three-stage power amplifiers (PA), a Darlington PA and a stacked PA, are designed and manufactured in 130 nm InP HBT Technology. The stacked PA shows a 70 GHz bandwidth of S21 (from 140 GHz to 210 GHz) with a peak S21 gain of 30 dB. It has a fractional bandwidth (FBW) of 40%. While the Darlington PA demonstrates a 90 GHz bandwidth of S21 (from 130 GHz to 220 GHz) with a peak S21 gain of 20 dB, the FBW of the Darlington PA is 51% which is highest among the G-band PAs. Furthermore, the Darlington PA has a saturated output power, Psat, of 9.6 dBm at 150 GHz, and a power added efficiency (PAE) of 14.7% with a 55 mW de power consumption. The stacked PA has a Psat of 13.4 dBm at 150 GHz, and a PAE of 17.3% with a 108 mW dc power consumption. To authors' knowledge, the stacked PA has the highest PAE among the D/G-band PAs published in the literature.
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| 8. |
- Beuerle, Bernhard, et al.
(författare)
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Integrating InP MMICs and Silicon Micromachined Waveguides for sub-THz Systems
- 2023
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Ingår i: IEEE Electron Device Letters. - 0741-3106 .- 1558-0563. ; 44:10, s. 1800-1803
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Tidskriftsartikel (refereegranskat)abstract
- A novel co-designed transition from InP monolithic microwave integrated circuits to silicon micromachined waveguides is presented. The transition couples a microstrip line to a substrate waveguide sitting on top of a vertical waveguide. The silicon part of the transition consists of a top and a bottom chip, fabricated in a very low-loss silicon micromachined waveguide technology using silicon on insulator wafers. The transition has been designed, fabricated and characterized for 220-330 GHz in a back-to-back configuration. Measured insertion loss is 3-6 dB at 250-300 GHz, and return loss is in excess of 5 dB.
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| 9. |
- Carpenter, Sona, et al.
(författare)
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A Fully integrated D-band Direct-Conversion I/Q Transmitter and Receiver Chipset in SiGe BiCMOS Technology
- 2021
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Ingår i: Journal of Communications and Networks. - 1976-5541 .- 1229-2370. ; 23:2, s. 73-82
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Tidskriftsartikel (refereegranskat)abstract
- This paper presents design and characterization of single-chip 110-170 GHz (D-band) direct conversion in-phase/quadrature-phase (I/Q) transmitter and receiver monolithic microwave integrated circuits (MMICs), realized in a 130 nm SiGe BiCMOS process with ft/fmax of 250 GHz/370 GHz. The chipset is suitable for low power wideband communication and can be used in both homodyne and heterodyne architectures. The Transmitter chip consists of a six-stage power amplifier, an I/Q modulator, and a LO multiplier chain. The LO multiplier chain consists of frequency sixtupler followed by a two-stage amplifier. It exhibits a single sideband conversion gain of 23 dB and saturated output power of 0 dBm. The 3 dB RF bandwidth is 31 GHz from 114 to 145 GHz. The receiver includes a low noise amplifier, I/Q demodulator and x6 multiplier chain at the LO port. The receiver provides a conversion gain of 27 dB and has a noise figure of 10 dB. It has 3 dB RF bandwidth of 28 GHz from 112-140 GHz. The transmitter and receiver have dc power consumption of 240 mW and 280 mW, respectively. The chip area of each transmitter and receiver circuit is 1.4 mm x 1.1 mm.
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| 10. |
- Chang, Haojie, 1994, et al.
(författare)
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Design of Chip-to-Waveguide Transition Centered at 220 GHz for sub-THz Packaging
- 2023
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Ingår i: 2023 53rd European Microwave Conference, EuMC 2023. ; , s. 126-129
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Konferensbidrag (refereegranskat)abstract
- A contactless chip-to-waveguide transition suitable for SiGe monolithic microwave integrated circuits (MMIC) packaging at 220 GHz is presented in this paper. The core part of the back-to-back (B2B) transition is an on-chip radiation aperture coupled to WR-3.4 metal waveguide, with quarter-wavelength waveguide steps for impedance matching. A gap between two waveguide lids is introduced for the leakage of waveguide through mode, while in ideal chipless simulation the narrow gap cannot support enough suppression. For better performance estimation during B2B design process, on-chip transmission line is damaged to verify the transition characteristic and the B2B structure is checked in half as single side chip-to-waveguide transition for performance validation. Measured results show cascaded half B2B structure gives better agreement. The whole B2B transition has 3-dB bandwidth of 198.4-244.1 GHz and 7.5 dB insertion loss at center frequency without deembedding.
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