| 1. |
- Andersson, Dag, et al.
(författare)
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COSIVU - Compact, smart and reliable drive unit for fully electric vehicles
- 2016
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Ingår i: 2016 Pan Pacific Microelectronics Symposium (Pan Pacific). - : Institute of Electrical and Electronics Engineers Inc.. - 9780988887398
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Konferensbidrag (refereegranskat)abstract
- COSIVU is a three year collaborative research project that ended in September 2015 and which has been funded within the European Green Car Initiative (now the European Green Vehicle Initiative). COSIVU addresses one of the most critical technical parts in fully electrical vehicles (FEV) besides the energy storage system: the mechatronic drive-train unit. The COSIVU project has delivered a new system architecture for multiple wheel drive-trains by a smart, compact and durable single-wheel drive unit with integrated electric motor, full silicon carbide (SiC) power electronics (switches and diodes), a novel control and health monitoring module with wireless communication, and an advanced ultra-compact cooling solution. DfR utilizing FEM simulations ensures first time right solutions. This paper presents the main results including the architecture of the drive train solution as well as the modular design of the inverter based on Inverter Building Blocks, one per phase. Performance tests are presented here for the first time for both the heavy duty commercial vehicle solution performed in a test rig by Volvo, and the tests of the COSIVU solution adapted to a passenger car done by Elaphe.
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| 2. |
- Brinkfeldt, Klas, et al.
(författare)
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Design and Fabrication of a SiC-Based Power Module with Double-Sided Cooling for Automotive Applications
- 2016
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Ingår i: Lecture Notes in Mobility. - Cham : Springer International Publishing. - 2196-5544 .- 2196-5552. ; , s. 157-171, s. 157-172
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Bokkapitel (övrigt vetenskapligt/konstnärligt)abstract
- The electrification of drive trains combined with special requirements of the automotive and heavy construction equipment applications drives the development of small, highly integrated and reliable power inverters. To minimize the volume and increase the reliability of the power switching devices a module consisting of SiC devices with double sided cooling capability has been developed. There are several benefits related to cooling the power devices on both sides. The major improvement is the ability to increase the power density, and thereby reduce the number of active switching devices required which in turn reduces costs. Other expected benefits of more efficient cooling are reductions in volume and mass per power ratio. Alternatively, improved reliability margins due to lower temperature swings during operation are can be expected. Removing the wire bonds on the top side of the devices is expected to improve the reliability regardless, since wire bonds are known to be one of the main limitations in power switching devices. In addition, it is possible to design the package with substantially lower inductance, which can allow faster switching of the devices. In this paper the design, simulations and fabrication process of a double sided SiC-based power module are presented.
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| 3. |
- Brinkfeldt, Klas, et al.
(författare)
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Thermal Simulations and Experimental Verification of Power Modules Designed for Double Sided Cooling
- 2016
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Ingår i: Electronic Components and Technology. - : Institute of Electrical and Electronics Engineers Inc.. - 0569-5503. ; , s. 1415-1422
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Tidskriftsartikel (refereegranskat)abstract
- Cooling power modules on both sides of the active switching devices reduces the operational junction temperature compared to conventional single sided cooling. In this work, thermal simulations of power modules based on single sided cooling concepts are compared with double sided cooling counterparts. Expected junction temperatures, maximum temperatures and maximum current capability is analyzed. In addition, experimental verification in the form of comparisons with thermal characterization tests for both single-And double sided power modules based on SiC bipolar junction transistors is presented. Results from simulations show that cooling of both sides of the active switching devices can reduce the thermal resistance by more than 40 percent. This number depends on the heat transfer coefficient. From one example, simulating a worst case stall condition of the electric machine, the use of double sided cooling reduces the maximum junction temperature from 167 °C to 106 °C at a load current of 300 A using a heat transfer coefficient of 4 kW/m2K and 4 kHz switching frequency. Furthermore, the temperature decreases to 97°C if AlN-based DBC substrates are used instead of alumina DBCs. Results from the experimental comparison between double-And single sided cooling showed that the maximum temperature for a load current range of 15 A to 50 A was reduced by 18 percent to 55 percent by using double sided cooling. At a device temperature of 60 °C, the increased thermal capability of the double sided version allowed for a 20 A higher load current, which corresponded to operation under 50 percent higher power losses. Double sided cooling also increased the maximum current capability through a single SiC BJT by more than 20 percent beyond the maximum current capability through the single sided cooling version.
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| 4. |
- Otto, Alexander, et al.
(författare)
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Reliability investigation on SiC BJT power module
- 2016
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Ingår i: PCIM Europe 2016. - : Institute of Electrical and Electronics Engineers Inc.. - 9783800741861 ; , s. 1063-1071
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Konferensbidrag (refereegranskat)abstract
- In this paper reliability investigation results for a power module fully based on silicon carbide (SiC) devices are presented. The module comprises four SiC bipolar junction transistors (BJT) and four SiC diodes in half-bridge configuration and is part of a newly developed 3-phase inverter for construction vehicles as well as for passenger car applications. The reliability investigations include electro-thermal and thermo-mechanical finite element simulations as well as power cycling tests with subsequent failure analyses. Furthermore, a double-sided cooling approach for the SiC BJT power module will be described and its thermal performance compared to the single-sided cooling version.
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