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Träfflista för sökning "WFRF:(Zwiller J) srt2:(2000-2004)"

Sökning: WFRF:(Zwiller J) > (2000-2004)

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1.
  • Barnes, W. L., et al. (författare)
  • Solid-state single photon sources : light collection strategies
  • 2002
  • Ingår i: European Physical Journal D. - : Springer Science and Business Media LLC. - 1434-6060 .- 1434-6079. ; 18:2, s. 197-210
  • Tidskriftsartikel (refereegranskat)abstract
    • We examine the problem of efficiently collecting the photons produced by solid-state single photon sources. The extent of the problem is first established with the aid of simple physical concepts. Several approaches to improving the collection efficiency are then examined and are broadly categorized into two types. First are those based on cavity quantum dynamics, in which the pathways by which the source may emit a photon are restricted, thus channeling emission into one desired mode. Second are those where we try to reshape the free space modes into a target mode in an optimal way, by means of refraction, without fundamentally altering the way in which the source emits. Respectively, we examine a variety of microcavities and solid immersion lenses. Whilst we find that the micropillar microcavities offer the highest collection efficiency (similar to70%), choosing this approach may not always be appropriate due to other constraints. Details of the different approaches, their merits and drawbacks are discussed in detail.
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4.
  • Zwiller, V., et al. (författare)
  • Studies of self-assembled InP quantum dots in planar microcavities
  • 2000
  • Ingår i: Materials Science and Engineering B: Solid-State Materials for Advanced Technology. - Strasbourg, France. ; 69:Lausanne, Switzerland, s. 314-317
  • Tidskriftsartikel (refereegranskat)abstract
    • Self-assembled InP quantum dots have been grown in planar microcavities. The dots were embedded in a Ga0.52In0.48P spacer grown on top of a high reflectance epitaxial Al0.29Ga0.71As/AlAs distributed Bragg reflector (DBR) to obtain a 33λ/4 cavity. The Fabry-Perot microcavity is formed between the AlGaAs/AlAs DBR and a dielectric SiNx/SiO2 DBR deposited on top of the GaInP spacer. The quantum dot emission is centered at 1.62 eV at 7 K. The microcavity resonance is centered at 1.65 eV, with a linewidth of 2 meV. Micro-photoluminescence (PL) studies using different objectives with different numerical apertures enable the collection of transversal modes.
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