| 1. |
- Charpentier, Sophie, 1983, et al.
(författare)
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Induced unconventional superconductivity on the surface states of Bi2Te3 topological insulator
- 2017
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Ingår i: Nature Communications. - : Springer Science and Business Media LLC. - 2041-1723 .- 2041-1723. ; 8:1
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Tidskriftsartikel (refereegranskat)abstract
- Topological superconductivity is central to a variety of novel phenomena involving the interplay between topologically ordered phases and broken-symmetry states. The key ingredient is an unconventional order parameter, with an orbital component containing a chiral p(x) + ip(y) wave term. Here we present phase-sensitive measurements, based on the quantum interference in nanoscale Josephson junctions, realized by using Bi2Te3 topological insulator. We demonstrate that the induced superconductivity is unconventional and consistent with a sign-changing order parameter, such as a chiral px + ipy component. The magnetic field pattern of the junctions shows a dip at zero externally applied magnetic field, which is an incontrovertible signature of the simultaneous existence of 0 and pi coupling within the junction, inherent to a non trivial order parameter phase. The nano-textured morphology of the Bi2Te3 flakes, and the dramatic role played by thermal strain are the surprising key factors for the display of an unconventional induced order parameter.
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| 2. |
- Chen, Xiren, et al.
(författare)
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Bi-Induced Electron Concentration Enhancement Being Responsible for Photoluminescence Blueshift and Broadening in InAs Films
- 2019
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Ingår i: Physica Status Solidi (B): Basic Research. - : Wiley. - 1521-3951 .- 0370-1972. ; 256:5
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Tidskriftsartikel (refereegranskat)abstract
- Photoluminescence (PL) study is conducted on InAs films molecular beam epitaxially grown on GaAs substrates with different Bi flux levels. A PL peak blueshift accompanied by linewidth broadening is found with the increase of Bi/As flux ratio, in contrast to the common Bi isoelectronic incorporation or surfactant effect. It is, with detailed lineshape analysis and the evidence of PL peak splitting in a magnetic filed, attributed to the electron concentration enhancement induced by Bi flux. The electron concentration in InAs film is evaluated, which is about 5-fold enhanced as Bi/As flux ratio rises up from 0 to 1x10(-3). The temperature dependence of the PL spectrum indicates that the carrier redistribution augments while the carrier-phonon Frohlich scattering weakens in InAs films with high Bi/As flux ratios. These findings reveal a novel Bi effect of electron concentration enhancement, and contribute to the basic knowledge of Bi in III-V semiconductors.
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| 3. |
- galletti, luca, 1986, et al.
(författare)
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High-Transparency Al/Bi2Te3 Double-Barrier Heterostructures
- 2017
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Ingår i: IEEE Transactions on Applied Superconductivity. - 1558-2515 .- 1051-8223. ; 27:4
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Tidskriftsartikel (refereegranskat)abstract
- We have fabricated highly transparent Al/Bi2Te3/Al superconductor/normal metal/superconductor double-barrier heterostructures. Transport measurements reveal the presence of multiple Andreev reflections related to two distinct energy gaps that we identify as the induced superconducting gap in the two electrodes. The realization of high-transparency Josephson junctions with topological insulators is an important step towards the study of topological superconductivity and Majorana fermions.
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| 4. |
- Han, Yi, et al.
(författare)
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Abnormal strain in suspended GeSn microstructures
- 2018
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Ingår i: Materials Research Express. - : IOP Publishing. - 2053-1591. ; 5:3
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Tidskriftsartikel (refereegranskat)abstract
- A suspended GeSn microstructure is realized by a two-step selective wet etching technique with the aim of fully relaxing the compressive strain, promoting the indirect to direct bandgap transition and improving the optical property of GeSn thin films grown on Ge. The compressive strain was found efficiently relaxed, and even unexpected large tensile strain was displayed on regions of the microstructure by micro-Raman spectroscopy. Residual Ge patches under the suspended GeSn microstructure were found by scanning electron microscopy and proved to be the origin of the tensile strain by finite element method simulations. The tensile strain on the surface is beneficial for direct bandgap conversion and carrier accumulation. Significant enhancement of photoluminescence was obtained in the GeSn microstructures than the original thin film.
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| 5. |
- Li, Yongxi, et al.
(författare)
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Non-fullerene acceptor with low energy loss and high external quantum efficiency: towards high performance polymer solar cells
- 2016
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Ingår i: Journal of Materials Chemistry A. - : Royal Society of Chemistry. - 2050-7488 .- 2050-7496. ; 4:16, s. 5890-5897
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Tidskriftsartikel (refereegranskat)abstract
- A non-fullerene electron acceptor bearing a fused 10-heterocyclic ring (indacenodithiophenoindacenodithiophene) with a narrow band gap (similar to 1.5 eV) was designed and synthesized. It possesses excellent planarity and enhanced effective conjugation length compared to previously reported fused-ring electron acceptors. When this acceptor was paired with PTB7-Th and applied in polymer solar cells, a power conversion efficiency of 6.5% was achieved with a high open circuit voltage of 0.94 V. More significantly, an energy loss as low as 0.59 eV and an external quantum efficiency as high as 63% were obtained simultaneously.
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| 6. |
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| 7. |
- Liu, Juanjuan, et al.
(författare)
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Electrically injected GaAsBi/GaAs single quantum well laser diodes
- 2017
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Ingår i: AIP Advances. - : AIP Publishing. - 2158-3226 .- 2158-3226. ; 7:11, s. Article Number: 115006 -
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Tidskriftsartikel (refereegranskat)abstract
- We present electrically injected GaAs/GaAsBi single quantum well laser diodes (LDs) emitting at a record long wavelength of 1141 nm at room temperature grown by molecular beam epitaxy. The LDs have excellent device performances with internal quantum efficiency of 86%, internal loss of 10 cm-1 and transparency current density of 196 A/cm2. The LDs can operate under continuous-wave mode up to 273 K. The characteristic temperature are extracted to be 125 K in the temperature range of 77?150 K, and reduced to 90 K in the range of 150?273 K. The temperature coefficient of 0.3 nm/K is extracted in the temperature range of 77?273 K.
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| 8. |
- Pan, Wenwu, et al.
(författare)
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Photoluminescence of InGaAs/GaAsBi/InGaAs type-II quantum wells grown by gas source molecular beam epitaxy
- 2017
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Ingår i: Semiconductor Science and Technology. - : IOP Publishing. - 1361-6641 .- 0268-1242. ; 32:1
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Tidskriftsartikel (refereegranskat)abstract
- InxGa1-xAs/GaAs1-yBiy/InxGa1-xAs (0.20 ≤x ≤0.22, 0.035 ≤y ≤0.045) quantum wells (QWs) were grown on GaAs substrates by gas source molecular beam epitaxy for realizing the type-II band edge line-up. Both type-I and type-II transitions were observed in the Bi containing W QWs and the photoluminescence intensity was enhanced in the sample with a high Bi content, which is mainly due to the improvement of carrier confinement. The 8 band k • p model was used to analyze the electronic properties in the QWs and the calculated transition energies fit well with the experiment results. Our study shows that the proposed type-II QW is a promising candidate for realizing GaAs-based near infrared light emitting devices near 1.3 μm
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| 9. |
- Pan, W. W., et al.
(författare)
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Raman scattering studies of dilute InP1-xBix alloys reveal unusually strong oscillator strength for Bi-induced modes
- 2015
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Ingår i: Semiconductor Science and Technology. - : IOP Publishing. - 1361-6641 .- 0268-1242. ; 30:9
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Tidskriftsartikel (refereegranskat)abstract
- Room-temperature Raman scattering studies of new InP1-xBix alloys grown by molecular beam epitaxy are reported. Two new Bi-induced vibrations observed at 149 and 171 cm-1 are assigned to InBi-like TO and LO phonon modes, respectively, and exhibit an unusually strong intensity for the dilute regime. Two additional modes at 311 and 337 cm-1 are resolved as well with unknown origins. The Raman intensities of the InBi-like TO and LO bands, as well as the new mode at 337 cm-1, exhibit strong and linear dependence on the Bi concentration for the composition range studied, 0.003 ≤ x ≤ 0.023. This correlation may serve as a fast and convenient means of characterizing bismuth composition not only in the ternary alloy InP1-xBix but also in the quaternaries such as In1-yGayP1-xBix and In1-yAlyP1-xBix.
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| 10. |
- Shao, Jun, et al.
(författare)
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Photoluminescence probing of interface evolution with annealing in InGa(N)As/GaAs single quantum wells
- 2015
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Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 118:16, s. 165305-
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Tidskriftsartikel (refereegranskat)abstract
- The effects of thermal annealing on the interfaces of InGa(N)As/GaAs single quantum wells(SQWs) are investigated by excitation-, temperature-, and magnetic field-dependent photoluminescence(PL). The annealing at 750 °C results in more significant blueshift and narrowing to the PLpeak than that at 600 °C. Each of the PL spectra can be reproduced with two PL components: (i)the low-energy component (LE) keeps energetically unchanged, while the high-energy component(HE) moves up with excitation and shows at higher energy for the In0.375Ga0.625As/GaAs butcrosses over with the LE at a medium excitation power for the In0.375Ga0.625N0.012As0.988/GaAsSQWs. The HE is broader than the corresponding LE, the annealing at 750 °C narrows the LE andHE and shrinks their energetic separation; (ii) the PL components are excitonic, and the InGaNAsshows slightly enhanced excitonic effects relative to the InGaAs SQW; (iii) no typical S-shape evolutionof PL energy with temperature is detectable, and similar blueshift and narrowing are identifiedfor the same annealing. The phenomena are mainly from the interfacial processes. Annealingimproves the intralayer quality, enhances the interfacial In-Ga interdiffusion, and reduces the interfacialfluctuation. The interfacial interdiffusion does not change obviously by the small N contentand hence similar PL-component narrowing and blueshift are observed for the SQWs after a nominallyidentical annealing. Comparison with previous studies is made and the PL measurementsunder different conditions are shown to be effective for probing the interfacial evolution in QWs.
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