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Crystalline quality...
Crystalline quality of 3C-SiC formed by high-fluence C+-implanted Si
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- Intarasiri, S. (författare)
- Institute for Science and Technology Research and Development, Chiang Mai University
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- Hallén, Anders. (författare)
- Uppsala universitet,KTH,Mikroelektronik och Informationsteknik, IMIT,Jonfysik
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- Lu, Jun (författare)
- Uppsala universitet,Jonfysik
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- Jensen, Jens (författare)
- Uppsala universitet,Jonfysik
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Yu, L. D. (författare)
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- Bertilsson, Kent (författare)
- Mittuniversitetet,Institutionen för informationsteknologi och medier (-2013)
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- Wolborski, M. (författare)
- KTH
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- Singkarat, S. (författare)
- FNRF, Department of Physics, Faculty of Science, Chiang Mai University
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- Possnert, Göran (författare)
- Uppsala universitet,Jonfysik
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(creator_code:org_t)
- Elsevier BV, 2007
- 2007
- Engelska.
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Ingår i: Applied Surface Science. - : Elsevier BV. - 0169-4332 .- 1873-5584. ; 253:11, s. 4836-4842
- Relaterad länk:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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https://urn.kb.se/re...
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https://urn.kb.se/re...
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Abstract
Ämnesord
Stäng
- Carbon ions at 40 keV were implanted into (1 0 0) high-purity p-type silicon wafers at 400 degrees C to a fluence of 6.5 x 10(17) ions/cm(2). Subsequent thermal annealing of the implanted samples was performed in a diffusion furnace at atmospheric pressure with inert nitrogen ambient at 1100 degrees C. Time-of-flight energy elastic recoil detection analysis (ToF-E ERDA) was used to investigate depth distributions of the implanted ions. Infrared transmittance (IR) and Raman scattering measurements were used to characterize the formation of SiC in the implanted Si substrate. X-ray diffraction analysis (XRD) was used to characterize the crystalline quality in the surface layer of the sample. The formation of 3C-SiC and its crystalline structure obtained from the above mentioned techniques was finally confirmed by transmission electron microscopy (TEM). The results show that 3C-SiC is directly formed during implantation, and that the subsequent high-temperature annealing enhances the quality of the polycrystalline SiC.
Ämnesord
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Nyckelord
- ion beam synthesis (IBS)
- silicon
- silicon carbide (SiC)
- infrared spectroscopy (IR)
- Raman spectroscopy
- time-of-flight energy elastic recoil detection analysis (ToF-E-ERDA)
- X-ray diffraction (XRD) analysis
- transmission electron microscopy (TEM)
- ion-beam synthesis
- silicon
- layers
- carbide
- growth
- carbon
- films
- Electrical engineering, electronics and photonics
- TECHNOLOGY
Publikations- och innehållstyp
- ref (ämneskategori)
- art (ämneskategori)
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