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Electrical characte...
Electrical characterization of titanium-based ohmic contacts to 4H-Silicon carbide for high-power and high-temperature operation
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Lee, S. K. (author)
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- Zetterling, Carl-Mikael (author)
- KTH,Mikroelektronik och informationsteknik, IMIT
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- Östling, Mikael (author)
- KTH,Mikroelektronik och informationsteknik, IMIT
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Moon, B. M. (author)
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(creator_code:org_t)
- 2002
- 2002
- English.
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In: Journal of the Korean Physical Society. - 0374-4884 .- 1976-8524. ; 40:4, s. 572-576
- Related links:
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https://urn.kb.se/re...
Abstract
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- We report on titanium-based ohmic contacts (titanium carbide. titanium tungsten, and titanium) on both highly doped epilayers (n(+) and p(+)) and Al-ion-implanted layers. The TiC contact layer was epitaxially grown on epilayers as well as an Al-ion-implanted layers of 4H-SiC by co-evaporation Ti and C-60 under an ultra-high vacuum condition at low temperature (<500 degreesC). For comparison and long-term stability test, we also deposited TiW (weight ratio 30 : 710) ohmic contacts to p and n-type epilayers of 4H-SiC. The specific contact resistances (p(c)) were found to be as low as p- 5X10(-6), 2x10(-5), 2x10(-5), 3x10(-4), 4x10(-5), and 1X10(-4) Omegacm(2) for TiC contacts to n(+) epilayers, p(+) epilayers, and Al-ion-implanted layers, Ti contacts to p(+) epilayers, and TiW contacts to p(+) and to n(+) epilayers, respectively, by using linear transmission line method (TLM) measurements. During the long-term reliability tests in a vacuum chamber, we found that evaporated Au capping layers helped to keep the contacts from degrading.
Keyword
- Ohmic contacts
- 4H-silicon carbide
- Long-term reliability
- silicon-carbide
Publication and Content Type
- ref (subject category)
- art (subject category)
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