Study of optical characteristics of damage in oxygen-implanted 6H-SiC

• Oxygen ions, with an energy of 70 keV, and doses ranging from 5×1013 to 5×1015 cm-2, were implanted into 6H SiC. The damage energies were calculated as 0.93-93 eV/atom with the doses respectively. The dielectric function obtained from spectroscopic ellipsometry were quite sensitive to ion irradiation of the surface, while the first order Raman spectroscopy decreased in intensity with increasing O+ ion dose. The damage behavior characterized by optical measurements was in good agreement with characterization by Rutherford backscattering spectrometry and channeling and atomic force microscopy.

Ämnesord

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

Nyckelord

Atomic force microscopy

Carrier concentration

Doping (additives)

Energy gap

Ion implantation

Light absorption

Nanostructured materials

Oxidation

Oxygen

Point defects

Radiation damage

Rutherford backscattering spectroscopy

Elastic damage energy

Spectroscopic ellipsometry

Silicon carbide

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