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Photoluminescence u...
Photoluminescence upconversion in GaInNP/GaAs heterostructures grown by gas source molecular beam epitaxy
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- Izadifard, Morteza (författare)
- Linköpings universitet,Institutionen för fysik, kemi och biologi,Tekniska högskolan
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- Bergman, Peder (författare)
- Linköpings universitet,Institutionen för fysik, kemi och biologi,Tekniska högskolan
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- Chen, Weimin (författare)
- Linköpings universitet,Institutionen för fysik, kemi och biologi,Tekniska högskolan
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- Buyanova, Irina A. (författare)
- Linköpings universitet,Institutionen för fysik, kemi och biologi,Tekniska högskolan
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- Hong, Y.G. (författare)
- Department of Electrical and Computer Engineering, University of California, San Diego, CA
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- Tu, C.W. (författare)
- Department of Electrical and Computer Engineering, University of California, San Diego, CA
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(creator_code:org_t)
- AIP Publishing, 2006
- 2006
- Engelska.
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Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 99:7, s. 073515-
- Relaterad länk:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- Properties of photoluminescence (PL) upconversion (PLU) in GaInNP/GaAs heterostructures are studied in detail by employing a number of optical spectroscopies. Based on excitation power dependent and temperature dependent PL measurements, the upconverted PL from GaInNP under optical excitation below its band gap is attributed to radiative transitions involving spatially separated localized electron-hole pairs, which is of a similar origin as the near-band-gap emission detected under optical excitation above the GaInNP band gap. The PLU process is shown to be largely promoted by increasing N content in the GaInNP alloys, due to a N-induced change in the band alignment at the GaInNP/GaAs heterointerface from the type I in the N-free structure to the type II in the samples with N compositions exceeding 0.5%. A possible mechanism for the energy upconversion is discussed in terms of two-step two-photon absorption. The photon recycling effect is shown to be important for the structures with N = 1%.
Ämnesord
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
Nyckelord
- TECHNOLOGY
- TEKNIKVETENSKAP
- Semiconductor physics
- Halvledarfysik
Publikations- och innehållstyp
- ref (ämneskategori)
- art (ämneskategori)
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