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Study of the Interf...
Study of the Interfacial Oxidation of InP Quantum Dots Synthesized from Tris(dimethylamino)phosphine
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- Duan, Xijian (author)
- Southern University of Science and Technology
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- Ma, Jingrui (author)
- Southern University of Science and Technology
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- Zhang, Wenda (author)
- Hainan University,Southern University of Science and Technology
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- Liu, Pai (author)
- Southern University of Science and Technology
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- Liu, Haochen (author)
- City University of Hong Kong
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- Hao, Junjie (author)
- Southern University of Science and Technology
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- Wang, Kai (author)
- Southern University of Science and Technology
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- Samuelson, Lars (author)
- Lund University,Lunds universitet,NanoLund: Centre for Nanoscience,Annan verksamhet, LTH,Lunds Tekniska Högskola,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,LTH profilområde: Nanovetenskap och halvledarteknologi,LTH profilområden,Other operations, LTH,Faculty of Engineering, LTH,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH,LTH Profile Area: Nanoscience and Semiconductor Technology,LTH Profile areas,Faculty of Engineering, LTH,Southern University of Science and Technology
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- Sun, Xiao Wei (author)
- Southern University of Science and Technology
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(creator_code:org_t)
- 2022-12-27
- 2023
- English 10 s.
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In: ACS Applied Materials and Interfaces. - : American Chemical Society (ACS). - 1944-8244 .- 1944-8252. ; 15:1, s. 1619-1628
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Abstract
Subject headings
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- InP quantum dots (QDs) are the most competitive in terms of environmentally friendly QDs. However, the synthesis of InP QDs requires breakthroughs in low-cost and safe phosphorus precursors such as tri(dimethylamino)phosphine [(DMA)3P]. It is found that even if the oxygen is completely avoided, there are still oxidation state defects at the core/shell interface of InP QDs. Herein, the record-breaking (DMA)3P-based red InP QDs were synthesized with the assist of HF processing to eliminate the InPOx defect and improve the fluorescence efficiency. The maximum photoluminescence quantum yield was 97.7%, which is the highest of the red InP QDs synthesized by the aminophosphine. The external quantum efficiency and brightness of the QD light-emitting diode device are also improved accordingly from 0.6% and 1276 cd·m-2 to 3.5% and 2355 cd·m-2, respectively.
Subject headings
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
Keyword
- Cd-free
- indium phosphide
- oxidation defect
- quantum dot
- quantum light-emitting diode
Publication and Content Type
- art (subject category)
- ref (subject category)
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