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Sodium enhanced oxi...
Sodium enhanced oxidation: Absence of shallow interface traps after removal of sodium ions from the SiO2/4H-SiC interface
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- Hermannsson, P.G. (author)
- Háskóli Íslands,University of Iceland
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- Allerstam, Fredrik, 1978 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Hauksson, S. (author)
- Háskóli Íslands,University of Iceland
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- Sveinbjornsson, E. O. (author)
- Háskóli Íslands,University of Iceland
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(creator_code:org_t)
- 2013
- 2013
- English.
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In: Materials Science Forum. - 1662-9752 .- 0255-5476. ; 740-742, s. 749-752
- Related links:
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Abstract
Subject headings
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- We investigate the strong passivation of shallow interface traps located near the SiC conduction band after enhanced oxidation of Si-face 4H-SiC in the presence of sodium. We find that removing the sodium ions present at the SiO2/SiC interface since oxidation by way of bias stress or annealing does not lead to a significant increase in the density of interface traps. The presence of sodium ions at the SiO2/SiC interface is therefore not responsible for the passivation of such interface traps in oxides formed by sodium enhanced oxidation.
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Materialteknik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Materials Engineering (hsv//eng)
Keyword
- TDRC
- Sodium enhanced oxidation
- MOS
- Interface states
Publication and Content Type
- kon (subject category)
- ref (subject category)
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