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Study of MgB2 HEB m...
Study of MgB2 HEB mixers vs the LO frequency and the bath temperature
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- Cherednichenko, Serguei, 1970 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Novoselov, Evgenii, 1988 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Bevilacqua, Stella, 1981 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Shibata, Hiroyuki (author)
- Nippon Telegraph and Telephone Corporation
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- Tokura, Yasuhiro (author)
- Nippon Telegraph and Telephone Corporation
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(creator_code:org_t)
- 2015
- 2015
- English.
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In: 26th International Symposium on Space Terahertz Technology March 16-18, 2015, Cambridge, United States. ; , s. M2-1
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Abstract
Subject headings
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- We investigate the noise and the gain of MgB2 Hot-Electron Bolometer (HEB) mixers at 1.63THz LO. The critical temperature of the HEB was 22K and the film thickness was 20nm. At 4.2K and 12K bath temperatures the lowest obtained receiver noise temperatures are 1700K and 2100K,respectively, with a noise bandwidth of about 4.6GHz. The gain bandwidth is about 3GHz in both cases.
Subject headings
- NATURVETENSKAP -- Fysik -- Astronomi, astrofysik och kosmologi (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Astronomy, Astrophysics and Cosmology (hsv//eng)
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
- TEKNIK OCH TEKNOLOGIER -- Nanoteknik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Nano-technology (hsv//eng)
Publication and Content Type
- kon (subject category)
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