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Effect of X-ray irr...
Effect of X-ray irradiation on the blinking of single silicon nanocrystals
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- Pevere, Federico (författare)
- KTH,Materialfysik, MF
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- Bruhn, Benjamin (författare)
- KTH,Material- och nanofysik
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- Sangghaleh, Fatemeh (författare)
- KTH,Materialfysik, MF
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- Hormozan, Yashar (författare)
- KTH,Materialfysik, MF
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- Sychugov, Ilya (författare)
- KTH,Materialfysik, MF
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- Linnros, Jan (författare)
- KTH,Materialfysik, MF
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(creator_code:org_t)
- 2015-09-21
- 2015
- Engelska.
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Ingår i: Physica Status Solidi (a) applications and materials science. - : Wiley-VCH Verlagsgesellschaft. - 1862-6300 .- 1862-6319. ; 212:12
- Relaterad länk:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Ämnesord
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- Photoluminescence (PL) intermittency (blinking) observed for single silicon nanocrystals (Si-NCs) embedded in oxide is usually attributed to trapping/de-trapping of carriers in the vicinity of the NC. Following this model, we propose that blinking could be modified by introducing new trap sites, for example, via X-rays. In this work, we present a study of the effect of X-ray irradiation (up to 65 kGy in SiO) on the blinking of single Si-NCs embedded in oxide nanowalls. We show that the luminescence characteristics, such as spectrum and life-time, are unaffected by X-rays. However, substantial changes in ON-state PL intensity, switching frequency, and duty cycle emerge from the blinking traces, while the ON- and OFF- time distributions remain of mono-exponential character. Although we do not observe a clear monotonic dependence of the blinking parameters on the absorbed dose, our study suggests that, in the future, Si-NCs could be blinking-engineered via X-ray irradiation.
Ämnesord
- NATURVETENSKAP -- Fysik -- Annan fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Other Physics Topics (hsv//eng)
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