Half metallic ferromagnetic behavior in (Ga, Cr)N and (Ga, Cr, V)N compounds for spintronic technologies : Ab initio and Monte Carlo methods

• In this article, we investigate the magnetic and electronic properties of GaN doped with simple and double impurities utilizing Ab initio and Monte Carlo studies. We have predicted that (Ga, Cr)N and (Ga, Cr, V)N compounds exhibit ferromagnetic- and halfmetallic-behavior with 100% spin polarization at the Fermi level. Moreover, we have found that Ga1-xCrxN and Ga1-2xCrxVxN (x = 0.04, 0.05 and 0.06) show a second order ferromagnetic transition and that their T-c is above room temperature. These predictions make (Ga, Cr)N and (Ga, Cr, V)N compounds strong candidates for spintronic technologies.

Ämnesord

NATURVETENSKAP  -- Fysik -- Den kondenserade materiens fysik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences -- Condensed Matter Physics (hsv//eng)

Nyckelord

Spintronic

Gallium nitride

Diluted magnetic semiconductors

Ab initio calculations

Monte Carlo method

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