| 11. |
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| 12. |
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| 13. |
- Lindstam, M, et al.
(författare)
-
Area selective laser chemical vapor deposition of diamond and graphite
- 1997
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Ingår i: APPLIED SURFACE SCIENCE. - : ELSEVIER SCIENCE BV. ; 110
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Annan publikation (övrigt vetenskapligt/konstnärligt)abstract
- High quality diamond and graphite has been deposited area selectively on silicon substrates in a hot filament chemical vapor deposition reactor employing laser heating. A mixture of CH4 (1-3 vol%) and H-2 was passed over a tantalum filament having a temp
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| 14. |
- Martensson, P, et al.
(författare)
-
Atomic layer epitaxy of copper - Growth and selectivity in the Cu(II)-2,2,6,6-tetramethyl-3,5-heptanedionate/H-2 process
- 1998
-
Ingår i: JOURNAL OF THE ELECTROCHEMICAL SOCIETY. - : ELECTROCHEMICAL SOC INC. ; 145:8
-
Annan publikation (övrigt vetenskapligt/konstnärligt)abstract
- The deposition of copper by means of atomic layer epitaxy is reported. Using Cu(II)-2,2,6,6-tetramethyl-3,5-heptanedionate as the precursor, pure and specular copper films were deposited at deposition temperatures below 200 degrees C. This is more than 1
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| 15. |
- Martensson, P, et al.
(författare)
-
Use of atomic layer epitaxy for fabrication of Si/TiN/Cu structures
- 1999
-
Ingår i: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B. - : AMER INST PHYSICS. ; 17:5
-
Annan publikation (övrigt vetenskapligt/konstnärligt)abstract
- The properties of titanium nitride deposited by atomic layer epitaxy (ALE) using three different deposition processes, i.e., TiI4+NH3, TiCl4+NH3 and TiCl4+Zn+NH3, as a diffusion barrier between copper and silicon were investigated. After deposition and a
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| 16. |
- McGinnis, S, et al.
(författare)
-
Use of oxygen-stabilized C-60 films for selective chemical vapor deposition
- 1997
-
Ingår i: APPLIED PHYSICS LETTERS. - : AMER INST PHYSICS. ; 70:5
-
Annan publikation (övrigt vetenskapligt/konstnärligt)abstract
- Thin C-60 films exposed to ultraviolet/visible light in the presence of oxygen were used as a selective mask for tungsten chemical vapor deposition on silicon substrates. An uptake of oxygen in the fullerene films as well as a significant increase in the
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| 17. |
- MECEA, VM, et al.
(författare)
-
DEVELOPMENT AND TESTING OF A HIGH-TEMPERATURE QUARTZ-CRYSTAL MICROBALANCE
- 1995
-
Ingår i: VACUUM. - : PERGAMON-ELSEVIER SCIENCE LTD. ; 46:7
-
Annan publikation (övrigt vetenskapligt/konstnärligt)abstract
- A high temperature quartz crystal microbalance (HTQCM) was developed in order to extend its application range up to the Curie point (573 degrees C) of the quartz resonators. It is shown that well matched quartz crystal resonators and even better, a dual
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| 18. |
- Mecea, VM, et al.
(författare)
-
Extensions of the quartz-crystal-microbalance technique
- 1996
-
Ingår i: SENSORS AND ACTUATORS A-PHYSICAL. - : ELSEVIER SCIENCE SA LAUSANNE. ; 53:1-3
-
Annan publikation (övrigt vetenskapligt/konstnärligt)abstract
- The high mass sensitivity of the quartz-crystal microbalance is explained by the very high acceleration of the particles on the surface of the quartz resonators. The sensing properties of quartz resonators in contact with a solid, liquid or gas medium ar
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| 19. |
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| 20. |
- OTTOSSON, M, et al.
(författare)
-
CHEMICAL-VAPOR-DEPOSITION OF CU2O ON MGO(100) FROM CUI AND N2O - ASPECTS OF EPITAXY
- 1995
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Ingår i: JOURNAL OF CRYSTAL GROWTH. - : ELSEVIER SCIENCE BV. ; 151:3-4
-
Annan publikation (övrigt vetenskapligt/konstnärligt)abstract
- Cu2O thin films were grown by chemical vapour deposition (CVD) from CuI and N2O on MgO(100) substrates. The orientation of the films was strongly influenced by the substrate pre-treatment. For films deposited at 650 degrees C several epitaxial orientatio
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