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Träfflista för sökning "WFRF:(Haglund Åsa 1976 ) srt2:(2020-2023)"

Sökning: WFRF:(Haglund Åsa 1976 ) > (2020-2023)

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11.
  • Ciers, Joachim, 1991, et al. (författare)
  • Impact of polarization fields on electrochemical lift-off of GaN membranes
  • 2021
  • Konferensbidrag (övrigt vetenskapligt/konstnärligt)abstract
    • III-nitride membranes offer novel device designs in photonics, electronics and optomechanics. However, substrate removal often leads to a rough back surface, which degrades device performance. Here, we demonstrate GaN membranes with atomically smooth etched surfaces by electrochemical lift-off, through the implementation of a built-in polarization field in the sacrificial layer. This leads to a faster reduction in the sacrificial layer free carrier density during etching and thus an abrupter etch stop, reducing the root-mean-square roughness down to 0.4 nm over 5×5 µm2. These results open interesting perspectives on high-quality optical cavities and waveguides in the ultraviolet and visible.
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12.
  • Ciers, Joachim, 1991, et al. (författare)
  • Smooth GaN membranes by polarization-assisted electrochemical etching
  • 2021
  • Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 118:6
  • Tidskriftsartikel (refereegranskat)abstract
    • III-nitride membranes offer promising perspectives and improved device designs in photonics, electronics, and optomechanics. However, the removal of the growth substrate often leads to a rough membrane surface, which increases scattering losses in optical devices. In this work, we demonstrate membranes with etched surface roughness comparable to that of the as-grown epitaxial material, accomplished by the implementation of a properly designed built-in polarization field near the top of the sacrificial layer from an AlInN interlayer, which is polarization-mismatched to GaN. This leads to a steeper reduction in free carrier density during the electrochemical etching of the sacrificial layer, limiting the etching current and thus causing an abrupter etch stop. As a result, the root mean square roughness is reduced to 0.4nm over 5x5 mu m(2). These smooth membranes open attractive pathways for the fabrication of high-quality optical cavities and waveguides operating in the ultraviolet and visible spectral regions.
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14.
  • Haglund, Åsa, 1976, et al. (författare)
  • Are blue and ultraviolet VCSELs a reality or just a dream?
  • 2020
  • Konferensbidrag (övrigt vetenskapligt/konstnärligt)abstract
    • Blue-emitting vertical-cavity surface-emitting lasers (VCSELs) with high optical output powers and decent threshold current densities have recently been demonstrated, but the power efficiency is still below 10%. We will give an overview of the challenges to realize high-performing devices and summarize state-of-the-art results, including our schemes for optically guided devices that are used in the best blue VCSELs today. In addition, we will present our method to simultaneously achieve high-reflectivity mirrors and good control over the cavity length for ultraviolet VCSELs. This has resulted in, to the best of our knowledge, the shortest VCSEL emission wavelength around 310 nm.
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  • Resultat 11-20 av 40
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konferensbidrag (27)
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övrigt vetenskapligt/konstnärligt (20)
refereegranskat (20)
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Haglund, Åsa, 1976 (40)
Wernicke, Tim (24)
Kneissl, Michael (24)
Hjort, Filip, 1991 (24)
Bergmann, Michael Al ... (20)
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Ciers, Joachim, 1991 (18)
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