| 11. |
- Yoon, Y. J., et al.
(författare)
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Effect of p-type buffer layer on the properties of GaMnAs ferromagnetic semiconductors
- 2004
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Ingår i: Journal of the Korean Physical Society. - 0374-4884 .- 1976-8524. ; 45:SUPPL., s. S720-S723
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Tidskriftsartikel (refereegranskat)abstract
- We have studied the magnetic and transport properties of Ga 1-xMn xAs epilayers grown either on undoped or on p-type doped GaAs buffer layer. The temperature dependence of the resistivity at zero magnetic field reveals that the Curie temperature (T C) in the Ga 1-xMn xAs layer grown on p-type doped GaAs buffer is slightly higher than that observed in the layer grown on undoped GaAs buffer. The magnetic and transport properties of the two samples show significant differences when they are placed in a magnetic field. In SQUID measurements, the Ga 1-xMn xAs layer grown on p-type buffer shows a larger coercive field and much slower decay of remanent magnetization than the layer grown on undoped buffer. This robust magnetic behavior observed in the doped sample is discussed in terms of the increase of free carrier concentration in the system arising from p-type doping in the buffer layer.
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| 12. |
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| 13. |
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| 14. |
- Chung, S. J., et al.
(författare)
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Possible indication of interlayer exchange coupling in GaMnAs/GaAs ferromagnetic semiconductor superlattices
- 2004
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Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 95:11, s. 7402-7404
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Tidskriftsartikel (refereegranskat)abstract
- The effects of free carriers in the nonmagnetic spacer layer on the magnetic properties of GaMnAs/GaAs ferromagnetic semiconductor superlattices (SL) were investigated. In the SL system, one of the SL structures was doped with Be in the GaAs spacer layers, and the GaAs layer of the other SL were undoped in order to investigate the effects of carriers. The remanent magnetization of the two SL were calculated in order to analyze the robustness of the SL systems. The hardness of the magnetization in the SL with Be-doped GaAs layer was found to be related to interlayer coupling which was introduced by doping of the nonmagnetic layers.
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| 15. |
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| 16. |
- Lee, S., et al.
(författare)
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Effect of be doping on the properties of GaMnAs ferromagnetic semiconductors
- 2003
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Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 93:10 3, s. 8307-8309
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Tidskriftsartikel (refereegranskat)abstract
- The effect of Be doping on the properties of GaMnAs ferromagnetic semiconductors was analyzed. The samples were characterized using SQUID and magnetotransport measurements. The observed increase in the critical temperature in Ga 1-xMn xAs for the low range of x can be explained by the increase of free carrier concentrations in the system arising from Be doping.
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| 17. |
- Moon, S.J., Fournier, K.B., Scott, H., Chung, H-K, Lee, R.W.
(författare)
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Optical pumping experiments in the XUV regime.
- 2003
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Ingår i: J. Quant. Spectroscopy & Radiative Transfer. ; 81, s. 311-17.
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Tidskriftsartikel (refereegranskat)
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| 18. |
- Yen, ST, et al.
(författare)
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Evidence for capture of holes into resonant states in boron-doped silicon
- 2004
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Ingår i: Applied Physics Reviews. - : AIP Publishing. - 1931-9401. ; 96:9, s. 4970-4975
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Tidskriftsartikel (refereegranskat)abstract
- The variation of hole population in the resonant states of B-doped Si excited by sequences of short electric-field pulses has been investigated by the technique of time-resolved step-scan far-infrared spectroscopy. From the variation of the p(3/2) absorptions, we find that the hole population in the ground state decreases continuously with the sequential electric pulses, as a result of the breakdown delay and hole accumulation in long-lived excited states. The measured time-varying spectra of the p(1/2) series have been analyzed and attributed to a significant variation of the hole population in the resonant states. We have also observed a new absorption line at 676 cm(-1) which is probably caused by the electric-field induced mixing of the resonant states. (C) 2004 American Institute of Physics.
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