Effect of Ion Bombardment on the Properties of Hydrogenated Amorphous Silicon Prepared from Undiluted and Xenon-Diluted Silane

• The contribution of ion bombardment to the growth of hydrogenated amorphous silicon prepared by plasma-enhanced chemical vapour deposition from silane and xenon-diluted silane source gases was studied by applying an external d.c. voltage to the substrate electrode. The role played by the xenon ions in the growth of the materials prepared from xenon-diluted silane source gas has been considered. It is demonstrated that the xenon ions are responsible for the growth of the materials showing stable photoconductivity behaviour under light illumination.

Ämnesord

TEKNIK OCH TEKNOLOGIER  -- Nanoteknik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Nano-technology (hsv//eng)

Nyckelord

Gark conductivity

Gas effusion

Gass spectroscopy

Genon dilution

Ghotoconductivity

Ghotodegradation

Glasma-enhanced chemical vapour deposition

Gydrogenated amorphous silicon

Films - Chemical Vapor Deposition

Photoconductivity - Degradation

Xenon - Ion Sources

Hydrogenated Amorphous Silicon

Ion Bombardment

Xenon Dilution

Semiconducting Silicon

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