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Träfflista för sökning "WFRF:(Frank Göran) srt2:(2015-2019)"

Sökning: WFRF:(Frank Göran) > (2015-2019)

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21.
  • Dubois, Valentin J., et al. (författare)
  • Scalable Manufacturing of Nanogaps
  • 2018
  • Ingår i: Advanced Materials. - : Wiley-VCH Verlagsgesellschaft. - 0935-9648 .- 1521-4095. ; 30:46
  • Forskningsöversikt (refereegranskat)abstract
    • The ability to manufacture a nanogap in between two electrodes has proven a powerful catalyst for scientific discoveries in nanoscience and molecular electronics. A wide range of bottom-up and top-down methodologies are now available to fabricate nanogaps that are less than 10 nm wide. However, most available techniques involve time-consuming serial processes that are not compatible with large-scale manufacturing of nanogap devices. The scalable manufacturing of sub-10 nm gaps remains a great technological challenge that currently hinders both experimental nanoscience and the prospects for commercial exploitation of nanogap devices. Here, available nanogap fabrication methodologies are reviewed and a detailed comparison of their merits is provided, with special focus on large-scale and reproducible manufacturing of nanogaps. The most promising approaches that could achieve a breakthrough in research and commercial applications are identified. Emerging scalable nanogap manufacturing methodologies will ultimately enable applications with high scientific and societal impact, including high-speed whole genome sequencing, electromechanical computing, and molecular electronics using nanogap electrodes.
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22.
  • Enrico, Alessandro, et al. (författare)
  • Manufacturing of Sub-20 NM Wide Single Nanowire Devices using Conventional Stepper Lithography
  • 2019
  • Ingår i: Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS). - : IEEE conference proceedings. - 9781728116105 ; , s. 244-247
  • Konferensbidrag (refereegranskat)abstract
    • Single nanowires have a broad range of applications in chemical and bio-sensing, photonics, and material science, but realizing individual nanowire devices in a scalable manner remains extremely challenging. This work presents a scalable and flexible method to realize single gold nanowire devices. We use conventional optical stepper lithography to generate notched beam structures, and crack lithography to obtain sub-20-nm-wide nanogaps at the notches, thereby obtaining a suitable shadow mask to define a single nanowire device. Then a gold evaporation step through the shadow mask forms the individual gold nanowires with positional and dimensional accuracy and with electrical contacts to probing pads.
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23.
  • Enrico, Alessandro, et al. (författare)
  • Scalable Manufacturing of Single Nanowire Devices Using Crack-Defined Shadow Mask Lithography
  • 2019
  • Ingår i: ACS Applied Materials and Interfaces. - : American Chemical Society (ACS). - 1944-8244 .- 1944-8252. ; 11:8, s. 8217-8226
  • Tidskriftsartikel (refereegranskat)abstract
    • Single nanowires (NWs) have a broad range of applications in nanoelectronics, nanomechanics, and nano photonics, but, to date, no technique can produce single sub 20 nm wide NWs with electrical connections in a scalable fashion. In this work, we combine conventional optical and crack lithographies to generate single NW devices with controllable and predictable dimensions and placement and with individual electrical contacts to the NWs. We demonstrate NWs made of gold, platinum, palladium, tungsten, tin, and metal oxides. We have used conventional i-line stepper lithography with a nominal resolution of 365 nm to define crack lithography structures in a shadow mask for large-scale manufacturing of sub-20 nm wide NWs, which is a 20-fold improvement over the resolution that is possible with the utilized stepper lithography. Overall, the proposed method represents an effective approach to generate single NW devices with useful applications in electrochemistry, photonics, and gas- and biosensing.
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24.
  • Errando-Herranz, Carlos, 1989-, et al. (författare)
  • A Low-power MEMS Tunable Photonic Ring Resonator for Reconfigurable Optical Networks
  • 2015
  • Ingår i: Proceedings of The 28th IEEE International Conference on Micro Electro Mechanical Systems (MEMS) Estoril, Portugal. Jan 2015. - : IEEE conference proceedings. ; , s. 53-56
  • Konferensbidrag (refereegranskat)abstract
    • We experimentally demonstrate a low-power MEMS tunable photonic ring resonator with 10 selectable channels for wavelength selection in reconfigurable optical networks operating in the C band. The tuning is achieved by changing the geometry of the slot of a silicon slot-waveguide ring resonator, by means of vertical electrostatic parallel-plate actuation. Our device provides static power dissipation below 0.1 μW, a wavelength tuning range of 1 nm, and a narrow bandwidth of 0.1 nm, i.e. 10 nW static power dissipation per selectable channel for TE mode tuning.
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25.
  • Errando-Herranz, Carlos, 1989-, et al. (författare)
  • A MEMS tunable photonic ring resonator with small footprint and large free spectral range
  • 2015
  • Ingår i: Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS), 2015 Transducers - 2015 18th International Conference on. - : IEEE conference proceedings. ; , s. 1001-1004
  • Konferensbidrag (refereegranskat)abstract
    • We demonstrate a MEMS tunable silicon photonic ringresonator with a 20 μm radius and a 5 nm free spectral range (FSR) for wavelength selection in reconfigurable optical networks. The device shows a loaded Q of 12000, and 300 pm tuning at a wavelength of 1544 nm.
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26.
  • Errando-Herranz, Carlos, et al. (författare)
  • Low-power microelectromechanically tunable silicon photonic ring resonator add-drop filter
  • 2015
  • Ingår i: Optics Letters. - : Optical Society of America. - 0146-9592 .- 1539-4794. ; 40:15, s. 3556-3559
  • Tidskriftsartikel (refereegranskat)abstract
    • We experimentally demonstrate a microelectromechanically (MEMS) tunable photonic ring resonator add-€“drop filter, fabricated in a simple silicon-on-insulator (SOI) based process. The device uses electrostatic parallel plate actuation to perturb the evanescent field of a silicon waveguide, and achieves a 530 pm resonance wavelength tuning, i.e., more than a fourfold improvement compared to previous MEMS tunable ring resonator add-€“drop filters. Moreover, our device has a static power consumption below 100 nW, and a tuning rate of -ˆ’62 €€‰pm/V, i.e., the highest reported rate for electrostatic tuning of ring resonator add-€“drop filters.
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27.
  • Errando-Herranz, Carlos, 1989-, et al. (författare)
  • New dynamic silicon photonic components enabled by MEMS technology
  • 2018
  • Ingår i: Proceedings Volume 10537, Silicon Photonics XIII. - : SPIE - International Society for Optical Engineering. - 9781510615595
  • Konferensbidrag (refereegranskat)abstract
    • Silicon photonics is the study and application of integrated optical systems which use silicon as an optical medium, usually by confining light in optical waveguides etched into the surface of silicon-on-insulator (SOI) wafers. The term microelectromechanical systems (MEMS) refers to the technology of mechanics on the microscale actuated by electrostatic actuators. Due to the low power requirements of electrostatic actuation, MEMS components are very power efficient, making them well suited for dense integration and mobile operation. MEMS components are conventionally also implemented in silicon, and MEMS sensors such as accelerometers, gyros, and microphones are now standard in every smartphone. By combining these two successful technologies, new active photonic components with extremely low power consumption can be made. We discuss our recent experimental work on tunable filters, tunable fiber-to-chip couplers, and dynamic waveguide dispersion tuning, enabled by the marriage of silicon MEMS and silicon photonics.
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28.
  • Fischer, Andreas C., 1982-, et al. (författare)
  • Integrating MEMS and ICs
  • 2015
  • Ingår i: Microsystems & Nanoengineering. - : Springer Science and Business Media LLC. - 2055-7434. ; 1:1, s. 1-16
  • Recension (refereegranskat)abstract
    • The majority of microelectromechanical system (MEMS) devices must be combined with integrated circuits (ICs) for operation in larger electronic systems. While MEMS transducers sense or control physical, optical or chemical quantities, ICs typically provide functionalities related to the signals of these transducers, such as analog-to-digital conversion, amplification, filtering and information processing as well as communication between the MEMS transducer and the outside world. Thus, the vast majority of commercial MEMS products, such as accelerometers, gyroscopes and micro-mirror arrays, are integrated and packaged together with ICs. There are a variety of possible methods of integrating and packaging MEMS and IC components, and the technology of choice strongly depends on the device, the field of application and the commercial requirements. In this review paper, traditional as well as innovative and emerging approaches to MEMS and IC integration are reviewed. These include approaches based on the hybrid integration of multiple chips (multi-chip solutions) as well as system-on-chip solutions based on wafer-level monolithic integration and heterogeneous integration techniques. These are important technological building blocks for the ‘More-Than-Moore’ paradigm described in the International Technology Roadmap for Semiconductors. In this paper, the various approaches are categorized in a coherent manner, their merits are discussed, and suitable application areas and implementations are critically investigated. The implications of the different MEMS and IC integration approaches for packaging, testing and final system costs are reviewed.
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29.
  • Forsberg, Fredrik, et al. (författare)
  • Integration of distributed Ge islands onto Si wafers by adhesive wafer bonding and low-temperature Ge exfoliation
  • 2015
  • Ingår i: 2015 28th IEEE International Conference on Micro Electro Mechanical Systems (MEMS 2015). - : IEEE. - 9781479979554 ; , s. 280-283
  • Konferensbidrag (refereegranskat)abstract
    • We present a novel and highly efficient wafer-level batch transfer process for populating silicon (Si) wafers with distributed islands of thin single-crystalline germanium (Ge) layers. This is achieved by transferring Ge from a Si wafer containing thick Ge dies to a Si target wafer by adhesive wafer-bonding and subsequent low-temperature Ge exfoliation.
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30.
  • Guxens, Monica, et al. (författare)
  • Air pollution exposure during pregnancy and childhood autistic traits in four European population-based cohort studies : the ESCAPE project
  • 2016
  • Ingår i: Environmental Health Perspectives. - Stockholm : Karolinska Institutet, Dept of Medical Epidemiology and Biostatistics. - 0091-6765 .- 1552-9924.
  • Tidskriftsartikel (refereegranskat)abstract
    • Background: Prenatal exposure to air pollutants has been suggested as a possible etiologic factor for the occurrence of autism spectrum disorder. Objectives: We aimed to assess whether prenatal air pollution exposure is associated with childhood autistic traits in the general population. Methods: Ours was a collaborative study of four European population-based birth/child cohorts— CATSS (Sweden), Generation R (the Netherlands), GASPII (Italy), and INMA (Spain). Nitrogen oxides (NO2, NOx) and particulate matter (PM) with diameters of ≤ 2.5 μm (PM2.5), ≤ 10 μm (PM10), and between 2.5 and 10 μm (PMcoarse), and PM2.5 absorbance were estimated for birth addresses by land-use regression models based on monitoring campaigns performed between 2008 and 2011. Levels were extrapolated back in time to exact pregnancy periods. We quantitatively assessed autistic traits when the child was between 4 and 10 years of age. Children were classified with autistic traits within the borderline/clinical range and within the clinical range using validated cut-offs. Adjusted cohort-specific effect estimates were combined using random-effects meta-analysis. Results: A total of 8,079 children were included. Prenatal air pollution exposure was not associated with autistic traits within the borderline/clinical range (odds ratio = 0.94; 95% CI: 0.81, 1.10 per each 10‑μg/m3 increase in NO2 pregnancy levels). Similar results were observed in the different cohorts, for the other pollutants, and in assessments of children with autistic traits within the clinical range or children with autistic traits as a quantitative score. Conclusions: Prenatal exposure to NO2 and PM was not associated with autistic traits in children from 4 to 10 years of age in four European population-based birth/child cohort studies.
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