| 1. |
- Akram, Nadeem, 1971-, et al.
(författare)
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High-Speed Performance of 1.55 µm Buried Hetero-Structure Lasers with 20 InGaAsP/InGaAlAs Quantum-Wells
- 2006
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Ingår i: 2006 European Conference on Optical Communications Proceedings, ECOC 2006. - : IEEE. - 9782912328397 ; , s. 1-2
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Konferensbidrag (refereegranskat)abstract
- 1550 nm re-grown FP lasers having 20 InGaAsP/InGaAlAs strain-balanced QWs exhibit low threshold current density, high T0 (78.0 #x000B0;C) and high resonance frequency (24 GHz) indicating that a large number of shallow barrier QWs are attractive for un-cooled high-speed direct-modulation applications.
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| 2. |
- Angulo Barrios, C., et al.
(författare)
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GaAs/AlGaAs buried-heterostructure laser diodes with semi-insulating GaInP:Fe regrowth
- 2001
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Ingår i: Lasers and Electro-Optics, 2001. CLEO/Pacific Rim 2001. The 4th Pacific Rim Conference on.
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Konferensbidrag (refereegranskat)abstract
- GaAs/AlGaAs buried-heterostructure in-plane lasers and vertical-cavity surface-emitting lasers using GaInP:Fe as the burying layer have been fabricated and investigated. Regrowth of GaInP:Fe around etched laser mesas was achieved by hydride vapor phase epitaxy. The lasers exhibit good performance under CW operation and show promising high-speed characteristics.
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| 3. |
- Dhanabalan, D., et al.
(författare)
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Studies on Schottky Barrier Diodes Fabricated using Single-Crystal Wafers of β-Ga2O3 Grown by the Optical Floating Zone Technique
- 2022
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Ingår i: Physica status solidi. B, Basic research. - : Wiley. - 0370-1972 .- 1521-3951. ; 259:2
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Tidskriftsartikel (refereegranskat)abstract
- β-Ga2O3 is one of the most promising wide-bandgap materials for optoelectronic applications as well as a conducting substrate for GaN-based device technologies. Single crystals of undoped β-Ga2O3 are grown by the optical floating zone technique utilizing compressed dry air as growth atmosphere. The properties of β-Ga2O3 are highly anisotropic. Optimization of the processing recipe for wafers along different orientations suitable for device development is conducted. Structural, optical, and electrical properties of the wafers are determined. Efforts are made to fabricate Schottky diodes based on Pt/Ti/Au–β-Ga2O3–Ti/Au device structures. Devices are fabricated on (−201) cut wafers. The device characteristics are discussed in detail.
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| 4. |
- Gu, Tian, et al.
(författare)
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Hybrid Integrated Photonic Platforms : feature issue introduction
- 2021
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Ingår i: Optical Materials Express. - : The Optical Society. - 2159-3930 .- 2159-3930. ; 11:12, s. 4095-4096
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Tidskriftsartikel (övrigt vetenskapligt/konstnärligt)abstract
- Hybrid photonic integration and interfaces allow different optical materials and components to be combined on a single platform and thus are crucial to future integrated photonic systems. This feature issue covers frontier research, technologies, and perspectives in this rapidly-evolving area and aims to address the key challenges and requirements across a broad range of photonic technologies.
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| 5. |
- Ha Ryu, Jae, et al.
(författare)
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Beam stability of buried-heterostructure quantum cascade lasers employing HVPE regrowth
- 2021
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Ingår i: Optics Express. - : The Optical Society. - 1094-4087. ; 29:2, s. 2819-2826
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Tidskriftsartikel (refereegranskat)abstract
- Measurements of beam stability for mid-infrared (IR)-emitting quantum cascade lasers (QCLs) are important for applications that require the beam to travel through air to remote targets, such as free-space communication links. We report beam-quality measurement results of narrow-ridge, 4.6 mu m-emitting buried-heterostructure (BH) QCLs fabricated using ICP etching and HVPE regrowth. Beam-quality measurements under QCW operation exhibit M-2 < 1.2 up to 1 W for similar to 5 mu m-wide ridges. 5 mu m-wide devices display some small degree of centroid motion with increasing output power (< 0.125 mrad), which corresponds to a targeting error of similar to 1.25 cm over a distance of 100 m.
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| 6. |
- Hammar, Mattias, 1961-, et al.
(författare)
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Compound Semiconductors
- 2021
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Ingår i: Physica status solidi. B, Basic research. - : Wiley. - 0370-1972 .- 1521-3951. ; 258:2
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Tidskriftsartikel (refereegranskat)
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| 7. |
- Hammar, Mattias, 1961-, et al.
(författare)
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Compound Semiconductors
- 2022
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Ingår i: Physica Status Solidi (a) applications and materials science. - : Wiley. - 1862-6300 .- 1862-6319. ; 219:4
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Tidskriftsartikel (övrigt vetenskapligt/konstnärligt)
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| 8. |
- Han, Mengyao, et al.
(författare)
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High Spectral Efficiency Long-Wave Infrared Free-Space Optical Transmission With Multilevel Signals
- 2023
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Ingår i: Journal of Lightwave Technology. - : Institute of Electrical and Electronics Engineers (IEEE). - 0733-8724 .- 1558-2213. ; 41:20, s. 6514-6520
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Tidskriftsartikel (refereegranskat)abstract
- This study explores the potential of long-wave infrared free-space optical (FSO) transmission that leverages multilevel signals to attain high spectral efficiency. The FSO transmission system consists of a directly modulated-quantum cascade laser (DM-QCL) operating at 9.15 mu m and a mercury cadmium telluride (MCT) detector. To fully understand the system, we conduct measurements on the DM-QCL chip and MCT detector and assess the overall amplitude response of the DM-QCL, MCT detector, and all electrical components. We apply various signals, including on-off keying (OOK), 4-level pulse amplitude modulation (PAM4), 6-level PAM (PAM6), and 8-level PAM (PAM8) to maximize the bit rate and spectral efficiency of the FSO transmission. Through a two-dimensional sweeping of the laser bias current and MCT detector photovoltage, we optimize the transmission performance. At the optimal operation point, the FSO system achieved impressive results which are up to 6 Gbaud OOK, 3.5 Gbaud PAM4, 3 Gbaud PAM6, and 2.7 Gbaud PAM8 signal transmissions, with a bit error rate performance below 6.25% overhead hard decision-forward error correction limit when the DM-QCL operates at 10 degrees C. We also evaluate the eye diagrams and stability of the system to showcase its remarkable transmission performance. Our findings suggest that the DM-QCL and MCT detector-based FSO transceivers offer a highly competitive solution for the next generation of optical wireless communication systems.
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| 9. |
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| 10. |
- Joharifar, Mahdieh, et al.
(författare)
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High-Speed 9.6-μm Long-Wave Infrared Free- Space Transmission with a Directly-Modulated QCL and a Fully-Passive QCD
- 2023
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Ingår i: Journal of Lightwave Technology. - : Institute of Electrical and Electronics Engineers Inc.. - 0733-8724 .- 1558-2213. ; 41:4, s. 1087-
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Tidskriftsartikel (refereegranskat)abstract
- Free-space optics (FSO) in the mid-infrared (mid- IR) contains rich spectral resources for future ultrahigh-speed wireless communications yet is currently under-exploited. Two atmospheric transmission windows at the mid-IR, namely, the mid-wave IR (MWIR, 3-5 µm) and the long-wave IR (LWIR, 8-12 µm), show great potential in supporting free-space communications for both terrestrial and space application scenarios. Particularly, the LWIR signal with a longer wavelength has high intrinsic robustness against aerosols' scattering and turbulence-induced scintillation and beam broadening effects, which are the main concerns hindering the wide deployment of practical FSO systems. In this context, high-bandwidth semiconductor-based mid-IR FSO transceivers will be desirable to meet the requirements of low energy consumption and small footprints for large-volume development and deployment. Quantum cascade devices, including quantum cascade lasers (QCLs) and quantum cascade detectors (QCDs), appear promising candidates to fulfill this role. In this work, we report a high-speed LWIR FSO transmission demonstration with a 9.6-µm directly-modulated (DM)-QCL and a fully passive QCD without any active cooling or bias voltage. Up to 8 Gb/s, 10 Gb/s, and 11 Gb/s signal transmissions are achieved when operating the DM- QCL at 10°C, 5°C, and 0°C, respectively. These results indicate a significant step towards an envisioned fully-connected mid-IR FSO solution empowered by the quantum cascade semiconductor devices.
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| 11. |
- Kjebon, Olle, 1960-, et al.
(författare)
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Modulation response measurements and evaluation of MQW InGaAsP lasers of various designs
- 1996
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Ingår i: Proc. SPIE, Vol. 2684. - : SPIE. ; , s. 138-152
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Konferensbidrag (övrigt vetenskapligt/konstnärligt)abstract
- Resultsfrom modulation measurements of 40 high-speed multi quantum well (MQW)lasers ((lambda) equals 1.55 micrometer) of various designs are presented.By fitting the careful calibrated measurements, both magnitude and phase,to an analytical transfer function we were able to determineif a certain laser was limited by thermal effects, parasitic-likeeffects, or nonlinear gain effects. We found that most ofthe devices in the study were limited by thermal effectsand/or contact parasitics. The parasitics were found to be determinedby the width of the high-doped contact layer and claddinglayers below the metallic contact. It was also found thata high doping of the separate confinement heterostructure (SCH) layersdecreases the damping of the relaxation peak since it facilitatesthe carrier transport. Improved contact design and high doped SCH-layersresulted in modulation bandwidths of around 24 GHz.
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| 12. |
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| 13. |
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| 14. |
- Lourdudoss, Sebastian, 1953-, et al.
(författare)
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Preface
- 2018
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Ingår i: Semiconductors and Semimetals. - : Academic Press Inc.. - 9780128150993 ; , s. ix-xi
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Bokkapitel (refereegranskat)
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| 15. |
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| 16. |
- Lourdudoss, Sebastian, 1953-, et al.
(författare)
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SERIES EDITORS PREFACE
- 2018
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Ingår i: SILICON PHOTONICS. - : ELSEVIER ACADEMIC PRESS INC. - 9780128150993 ; , s. IX-XI
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Bokkapitel (refereegranskat)
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| 17. |
- Lourdudoss, Sebastian, 1953-, et al.
(författare)
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Trends in heteroepitaxy of III-Vs on silicon for photonic and photovoltaic applications
- 2017
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Ingår i: Smart Photonic and Optoelectronic Integrated Circuits XIX 2017. - : SPIE. - 0277-786X .- 1996-756X. - 9781510606555 - 9781510606562 ; 10107
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Konferensbidrag (refereegranskat)abstract
- We present and compare the existing methods of heteroepitaxy of III-Vs on silicon and their trends. We focus on the epitaxial lateral overgrowth (ELOG) method as a means of achieving good quality III-Vs on silicon. Initially conducted primarily by near-equilibrium epitaxial methods such as liquid phase epitaxy and hydride vapour phase epitaxy, nowadays ELOG is being carried out even by non-equilibrium methods such as metal organic vapour phase epitaxy. In the ELOG method, the intermediate defective seed and the mask layers still exist between the laterally grown purer III-V layer and silicon. In a modified ELOG method called corrugated epitaxial lateral overgrowth (CELOG) method, it is possible to obtain direct interface between the III-V layer and silicon. In this presentation we exemplify some recent results obtained by these techniques. We assess the potentials of these methods along with the other existing methods for realizing truly monolithic photonic integration on silicon and III-V/Si heterojunction solar cells.
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| 18. |
- Manavaimaran, Balaji, et al.
(författare)
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Investigation of OP-GaP Grown on OP-GaAs Templates Using Nondestructive Reciprocal Space Mapping
- 2023
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Ingår i: Crystals. - : MDPI AG. - 2073-4352. ; 13:2, s. 168-
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Tidskriftsartikel (refereegranskat)abstract
- Orientation-patterned gallium phosphide (OP-GaP) has been grown heteroepitaxially on OP gallium arsenide (GaAs) templates using hydride vapor phase epitaxy (HVPE). The effect of OP-GaAs template fabrication methods of epitaxial-inversion and wafer bonding on the heteroepitaxial OP-GaP growth has been investigated. OP-GaP layers with a growth rate of up to 35 mu m/h and excellent domain fidelity were obtained. The growth rate and the domain fidelity have been revealed/studied by scanning electron microscope (SEM). In addition, we demonstrate that the crystalline quality of the individual domains, namely, the substrate-oriented domains (ODs) and the inverted domains (IDs), can be investigated by high-resolution x-ray diffraction reciprocal space mapping (HRXRDRSM), which can also indicate the domain fidelity. Attempts to increase the growth rate and improve the domain fidelity by increasing the III and V group precursors resulted in either an increase in the growth rate in the OP-GaP layers grown on epitaxial inversion OP-GaAs template at the expense of the domain crystalline quality and fidelity or an improvement in the crystalline quality of the domains at the expense of the growth rate in the OP-GaP layers grown on wafer-bonded OP-GaAs templates. In the case of OP-GaP grown on OP-GaAs templates prepared by epitaxial inversion, the crystalline quality of the ODs is better than that of the IDs, but it shows that the quality of the inverted layer in the template influences the quality and fidelity of the grown domains. To the authors' knowledge, exploitation of HRXRDRSM studies on OP-GaP to establish the crystalline quality of its individual domains (ODs and IDs) is the first of its kind. OP-ZnSe grown on OP-GaAs templates has also been included in this study to further emphasize the potential of this method. We propose from this study that once the growth rate is optimized from SEM studies, HRXRDRSM analysis alone can be used to assess the structural quality and to infer the domain fidelity of the OP structures.
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| 19. |
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| 20. |
- Omanakuttan, Giriprasanth, et al.
(författare)
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Epitaxial lateral overgrowth of GaxIn1-xP toward direct GaxIn1-xP/Si heterojunction
- 2017
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Ingår i: Physica Status Solidi (a) applications and materials science. - : WILEY-V C H VERLAG GMBH. - 1862-6300 .- 1862-6319. ; 214:3
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Tidskriftsartikel (refereegranskat)abstract
- The growth of GaInP by hydride vapor phase epitaxy (HVPE) was studied on planar GaAs, patterned GaAs for epitaxial lateral overgrowth (ELOG), and InP/Si seed templates for corrugated epitaxial lateral overgrowth (CELOG). First results on the growth of direct GaInP/Si heterojunction by CELOG is presented. The properties of GaxIn(1-x)P layer and their dependence on the process parameters were investigated by X-ray diffraction, including reciprocal lattice mapping (XRD-RLM), scanning electron microscopy equipped with energy-dispersive X-ray spectroscopy (SEM-EDS), photoluminescence (PL), and Raman spectroscopy. The fluctuation of Ga composition in the GaxIn(1-x)P layer was observed on planar substrate, and the strain caused by the composition variation is retained until relaxation occurs. Fully relaxed GaInP layers were obtained by ELOG and CELOG. Raman spectroscopy reveals that there is a certain amount of ordering in all of the layers except those grown at high temperatures. Orientation dependent Ga incorporation in the CELOG, but not in the ELOG GaxIn(1-x)P layer, and Si incorporation in the vicinity of direct GaxIn(1-x)P/Si heterojunction from CELOG are observed in the SEM-EDS analyses. The high optical quality of direct GaInP/Si heterojunction was observed by cross-sectional micro-PL mapping and the defect reduction effect of CELOG was revealed by high PL intensity in GaInP above Si.
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| 21. |
- Omanakuttan, Giriprasanth, et al.
(författare)
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Optical and interface properties of direct InP/Si heterojunction formed by corrugated epitaxial lateral overgrowth
- 2019
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Ingår i: Optical Materials Express. - : OPTICAL SOC AMER. - 2159-3930 .- 2159-3930. ; 9:3, s. 1488-1500
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Tidskriftsartikel (refereegranskat)abstract
- We fabricate and study direct InP/Si heterojunction by corrugated epitaxial lateral overgrowth (CELOG). The crystalline quality and depth-dependent charge carrier dynamics of InP/Si heterojunction are assessed by characterizing the cross-section of grown layer by low-temperature cathodoluminescence, time-resolved photoluminescence and transmission electron microscopy. Compared to the defective seed InP layer on Si, higher intensity band edge emission in cathodoluminescence spectra and enhanced carrier lifetime of InP are observed above the CELOG InP/Si interface despite large lattice mismatch, which are attributed to the reduced threading dislocation density realized by the CELOG method. (C) 2019 Optical Society of America under the terms of the OSA Open Access Publishing Agreement
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| 22. |
- Omanakuttan, Giriprasanth, et al.
(författare)
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Surface emitting 1.5 mu m multi-quantum well LED on epitaxial lateral overgrowth InP/Si
- 2020
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Ingår i: Optical Materials Express. - : The Optical Society. - 2159-3930 .- 2159-3930. ; 10:7, s. 1714-1723
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Tidskriftsartikel (refereegranskat)abstract
- We demonstrate a surface emitting 1.5 mu m multi-quantum well (MQW) light-emitting diode (LED) on a 3-inch epitaxial lateral overgrowth (ELOG) InP/Si wafer. The enhanced crystalline quality of ELOG InP/Si is revealed by various characterization techniques, which gives rise to a MQW with high photoluminescence intensity at 1.5 mu m and interference fringes arising from the vertical Fabry-Perot cavity. The LED devices exhibited strong electroluminescence intensity that increased with pump current. Moreover, transparency current measurements indicate optical gain in the 1.5 mu m MQW on InP/Si. The results are encouraging for obtaining wafer scale 1.5 mu m surface emitting laser structures on silicon with further optimization.
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| 23. |
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| 24. |
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| 25. |
- Pang, Xiaodan, Dr., et al.
(författare)
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4 Gbps PAM-4 and DMT Free Space Transmission using a 4.65-pm Quantum Cascaded Laser at Room Temperature
- 2017
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Ingår i: European Conference on Optical Communication, ECOC. - : Institute of Electrical and Electronics Engineers Inc.. - 9781538656242 ; , s. 1-3
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Konferensbidrag (refereegranskat)abstract
- We experimentally demonstrate 4Gbps PAM-4 and DMT transmissions using a quantum cascaded laser (QCL) emitting at mid-wavelength infrared of 4.65μm and a commercial infrared photovoltaic detector. The QCL is directly modulated and operated at room temperature with Peltier Cooling.
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