1. |
|
|
2. |
|
|
3. |
|
|
4. |
- Koo, S. M., et al.
(författare)
-
Ferroelectric Pb(Zr,Ti)O-3/Al2O3/4H-SiC diode structures
- 2002
-
Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 81:5, s. 895-897
-
Tidskriftsartikel (refereegranskat)abstract
- Pb(Zr,Ti)O-3 (PZT) films (450 nm thick) were grown on 4H-silicon carbide (SiC) substrates by a pulsed-laser deposition technique. X-ray diffraction confirms single PZT phase without a preferred orientation. Stable capacitance-voltage (C-V) loops with low conductance (<0.1 mS/cm(2), tan deltasimilar to0.0007 at 400 kHz) and memory window as wide as 10 V were obtained when 5-nm-thick Al2O3 was used as a high band gap (E(g)similar to9 eV) barrier buffer layer between PZT (E(g)similar to3.5 eV) and SiC (E(g)similar to3.2 eV). High-frequency (400 kHz) C-V characteristics revealed clear accumulation, and depletion behavior. Although the charge injection from SiC is the dominant mechanism for C-V hysteresis in PZT/Al2O3/SiC, negligible sweep rate dependence and negligible applied bias dependence were observed compared to that of PZT/SiC. By using room-temperature photoilluminated C-V measurements, the interface states as well as the charge trapping in the PZT/Al2O3 stacks have been calculated.
|
|