| 1. |
- Barth, Joachim, et al.
(författare)
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Investigation of the thermoelectric properties of LiAlSi and LiAlGe
- 2010
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Ingår i: Journal of Electronic Materials. - : Springer Science and Business Media LLC. - 1543-186X .- 0361-5235. ; 39:9, s. 1856-1860
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Tidskriftsartikel (refereegranskat)abstract
- The compounds LiAlSi and LiAlGe were synthesized and their thermoelectric properties and temperature stability were investigated. The samples were synthesized by arc melting of the constituent elements. For the determination of the structure type and the lattice parameter, x-ray powder diffraction was used. Both compounds were of the C1 b structure type. The stability of the compounds was investigated by differential thermal analysis and thermal gravimetry. The Seebeck coefficient and the electrical resistivity were determined in the temperature range from 2 K to 650 K. All compounds showed p-type behavior. The thermal conductivity was measured from 2 K to 400 K. The evaluation of the thermal conductivity yielded values as low as 2.4 W m -1 K -1 at 400 K for LiAlGe. The low values are ascribed to high mass fluctuation scattering and a possible rattling effect of the Li atoms.
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| 2. |
- Battiston, S., et al.
(författare)
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Synthesis and Characterization of Al-Doped Mg2Si Thermoelectric Materials
- 2013
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Ingår i: Journal of Electronic Materials. - New York : Springer. - 0361-5235 .- 1543-186X. ; 42:7, s. 1956-1959
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Tidskriftsartikel (refereegranskat)abstract
- Magnesium silicide (Mg2Si)-based alloys are promising candidates for thermoelectric (TE) energy conversion for the middle to high range of temperature. These materials are very attractive for TE research because of the abundance of their constituent elements in the Earth's crust. Mg2Si could replace lead-based TE materials, due to its low cost, nontoxicity, and low density. In this work, the role of aluminum doping (Mg2Si:Al = 1:x for x = 0.005, 0.01, 0.02, and 0.04 molar ratio) in dense Mg2Si materials was investigated. The synthesis process was performed by planetary milling under inert atmosphere starting from commercial Mg2Si pieces and Al powder. After ball milling, the samples were sintered by means of spark plasma sintering to density > 95%. The morphology, composition, and crystal structure of the samples were characterized by field-emission scanning electron microscopy, energy-dispersive spectroscopy, and x-ray diffraction analyses. Moreover, Seebeck coefficient analyses, as well as electrical and thermal conductivity measurements were performed for all samples up to 600A degrees C. The resultant estimated ZT values are comparable to those reported in the literature for these materials. In particular, the maximum ZT achieved was 0.50 for the x = 0.01 Al-doped sample at 600A degrees C.
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| 3. |
- Famengo, A., et al.
(författare)
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Phase Content Influence on Thermoelectric Properties of Manganese Silicide-Based Materials for Middle-High Temperatures
- 2013
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Ingår i: Journal of Electronic Materials. - New York : Springer. - 0361-5235 .- 1543-186X. ; 42:7, s. 2020-2024
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Tidskriftsartikel (refereegranskat)abstract
- The higher manganese silicides (HMS), represented by MnSi (x) (x = 1.71 to 1.75), are promising p-type leg candidates for thermoelectric energy harvesting systems in the middle-high temperature range. They are very attractive as they could replace lead-based compounds due to their nontoxicity, low-cost starting materials, and high thermal and chemical stability. Dense pellets were obtained through direct reaction between Mn and Si powders during the spark plasma sintering process. The tetragonal HMS and cubic MnSi phase amounts and the functional properties of the material such as the Seebeck coefficient and electrical and thermal conductivity were evaluated as a function of the SPS processing conditions. The morphology, composition, and crystal structure of the samples were characterized by scanning electron microscopy, energy-dispersive x-ray spectroscopy, and x-ray diffraction analyses, respectively. Differential scanning calorimetry and thermogravimetric analysis were performed to evaluate the thermal stability of the final sintered material. A ZT value of 0.34 was obtained at 600A degrees C for the sample sintered at 900A degrees C and 90 MPa with 5 min holding time.
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| 4. |
- Fiameni, S., et al.
(författare)
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Effect of Synthesis and Sintering Conditions on the Thermoelectric Properties of n-Doped Mg2Si
- 2014
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Ingår i: Journal of Electronic Materials. - : Springer Science and Business Media LLC. - 0361-5235 .- 1543-186X. ; 43:6, s. 2301-2306
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Tidskriftsartikel (refereegranskat)abstract
- Magnesium silicide (Mg2Si)-based alloys are promising candidates for thermoelectric (TE) energy conversion in the middle-high temperature range. The detrimental effect of the presence of MgO on the TE properties of Mg2Si based materials is widely known. For this reason, the conditions used for synthesis and sintering were optimized to limit oxygen contamination. The effect of Bi doping on the TE performance of dense Mg2Si materials was also investigated. Synthesis was performed by ball milling in an inert atmosphere starting from commercial Mg2Si powder and Bi powder. The samples were consolidated, by spark plasma sintering, to a density > 95%. The morphology, and the composition and crystal structure of samples were characterized by field-emission scanning electronic microscopy and x-ray diffraction, respectively. Moreover, determination of Seebeck coefficients and measurement of electrical and thermal conductivity were performed for all the samples. Mg2Si with 0.1 mol% Bi doping had a ZT value of 0.81, indicative of the potential of this method for fabrication of n-type bulk material with good TE performance.
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| 5. |
- Fiameni, S., et al.
(författare)
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Introduction of Metal Oxides into Mg2Si Thermoelectric Materials by Spark Plasma Sintering
- 2013
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Ingår i: Journal of Electronic Materials. - New York : Springer. - 0361-5235 .- 1543-186X. ; 42:7, s. 2062-2066
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Tidskriftsartikel (refereegranskat)abstract
- Oxide incorporation into thermoelectric Mg2Si-based materials was performed starting from commercial Mg2Si and commercial metal oxides by applying ball milling and spark plasma sintering (SPS) processing. The SPS conditions, such as sintering temperature, pressure, and holding time, were optimized with the aim of obtaining both full densification and oxide incorporation. Thermoelectric characterizations, such as Seebeck coefficient and electrical and thermal conductivity, were carried out and related to the pellet compositions. The morphology, composition, and crystallographic structure of the samples were characterized by field-emission scanning electron microscopy, energy-dispersive spectrometry, and x-ray diffraction analyses, respectively.
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| 6. |
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| 7. |
- Högblom, Olle, 1983, et al.
(författare)
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Analysis of Thermoelectric Generator Performance by Use of Simulations and Experiments
- 2014
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Ingår i: Journal of Electronic Materials. - : Springer Science and Business Media LLC. - 1543-186X .- 0361-5235. ; 43:6, s. 2247-2254
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Tidskriftsartikel (refereegranskat)abstract
- A method that enables accurate determination of contact resistances in thermoelectric generators and which gives detailed insight into how these reduce module performance is presented in this paper. To understand the importance taking thermal and electrical contact resistances into account in analysis of thermoelectric generators, full-scale modules were studied. Contact resistances were determined by means of non-linear regression analysis on the basis of results from 3D finite element simulations and experiments in a setup in which heat flow, voltage, and current were measured. Statistical evaluation showed that the model and the identified contact resistances enabled excellent prediction of performance over the entire range of operating conditions. It was shown that if contact resistances were not included in the analysis the simulations significantly over-predicted both heat flow and electric power output, and it was concluded that contact resistance should always be included in module simulations. The method presented in this paper gives detailed insight into how thermoelectric modules perform in general, and also enables prediction of potential improvement in module performance by reduction of contact resistances.
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| 8. |
- Junesand, Carl, et al.
(författare)
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Effect of the Surface Morphology of Seed and Mask Layers on InP Grown on Si by Epitaxial Lateral Overgrowth
- 2012
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Ingår i: Journal of Electronic Materials. - : Springer Verlag (Germany) / Institute of Electrical and Electronics Engineers (IEEE). - 0361-5235 .- 1543-186X. ; 41:9, s. 2345-2349
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Tidskriftsartikel (refereegranskat)abstract
- Heteroepitaxy of InP on Si by epitaxial lateral overgrowth (ELOG) using a thin seed layer of InP as starting material is investigated, with special attention given to the effect of the surface morphology of the seed and the mask layers on the quality of the ELOG layers. Chemical mechanical polishing (CMP) has been used to improve the morphological and optical quality of InP grown by hydride vapor-phase epitaxy (HVPE) using ELOG. Two approaches have been investigated: polishing the InP seed layer on Si before depositing the SiO2 mask and polishing the SiO2 mask after its deposition on the unprocessed seed layer. For polishing the InP (seed)/Si, a two-step process with an aluminum oxide- and sodium hypochlorite-containing slurry as well as a slurry based on sodium hypochlorite mixed with citric acid was used. For SiO2 mask polishing, a slurry with colloidal silica as an abrasive was employed. In both cases, the SiO2 mask was patterned with double line openings and ELOG carried out in an HVPE reactor. Morphology and crystal quality of the resulting ELOG layers were studied with atomic force microscopy (AFM) and room-temperature panchromatic cathodoluminescence (PC-CL) in situ in a scanning electron microscope (SEM), respectively. The results show that, whereas both polishing approaches result in an ELOG InP layer with good morphology, its surface roughness is lower when the InP (seed)/Si is subjected to CMP prior to deposition of the SiO2 mask, than when only the SiO2 mask is polished. This approach also leads to a decrease in the number of defects generated during coalescence of the ELOG layers.
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| 9. |
- Kaniewska, M., et al.
(författare)
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Classification of Energy Levels in Quantum Dot Structures by Depleted Layer Spectroscopy
- 2010
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Ingår i: Journal of Electronic Materials. - : Springer Science and Business Media LLC. - 1543-186X .- 0361-5235. ; 39:6, s. 766-772
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Tidskriftsartikel (refereegranskat)abstract
- The coexistence of quantum confined energy levels and defect energy levels in quantum dot (QD) structures may cause difficulties in distinguishing between their different origin when using deep-level transient spectroscopy (DLTS). Using InAs/GaAs QDs as demonstration vehicles, we present methodologies to obtain such a classification by DLTS. QD-related spectra measured as a function of repetition frequency of electrical pulses, f, or temperature, T, and reverse voltage, V (R), are depicted as contour plots on (f, V (R)) and (T, V (R)) planes, thus reflecting the complex thermal and tunneling emission of electrons from the ground and excited states. Defect-related levels give rise to different contour patterns and undergo modification, exhibiting double-peak structured emission when defects are agglomerated in the vicinity of the QD plane. This effect is interpreted in terms of an interaction between electron states in traps and the confined QD states.
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| 10. |
- Li, Ling-Guang, 1982-, et al.
(författare)
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Dynamics of SiO2 Buried Layer Removal from Si-SiO2-Si and Si-SiO2-SiC Bonded Substrates by Annealing in Ar
- 2014
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Ingår i: Journal of Electronic Materials. - : Springer Berlin/Heidelberg. - 0361-5235 .- 1543-186X. ; 43:2, s. 541-547
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Tidskriftsartikel (refereegranskat)abstract
- Silicon-on-silicon-carbide substrates could be ideal for high-power and radiofrequency silicon devices. Such hybrid wafers, when made by wafer bonding, contain an intermediate silicon dioxide layer with poor thermal characteristics, which can be removed by high-temperature annealing in an inert atmosphere. To understand the dynamics of this process, removal of 2.4-nm-thick SiO2 layers from Si-SiO2-Si and Si-SiO2-SiC substrates has been studied at temperatures ranging from 1100A degrees C to 1200A degrees C. The substrates were analyzed by transmission electron microscopy, electron energy-loss spectroscopy, secondary-ion mass spectroscopy, and ellipsometry, before and after annealing. For oxide thickness less than 2.4 nm, the activation energy for oxide removal was estimated to be 6.4 eV, being larger than the activation energy reported for removal of thicker oxides (4.1 eV). Under the same conditions, the SiO2 layer became discontinuous. In the time domain, three steps could be distinguished: bulk diffusion, bulk diffusion with void formation, and bulk diffusion with disintegration. The void formation, predominant here, has an energetic cost that could explain the larger activation energy. The oxide remaining after prolonged annealing corresponds to one layer of oxygen atoms.
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| 11. |
- Li, Ling-Guang, 1982-, et al.
(författare)
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Thermal characterization of polycrystalline SiC
- 2014
-
Ingår i: Journal of Electronic Materials. - : Springer Science and Business Media LLC. - 0361-5235 .- 1543-186X. ; 43:4, s. 1150-1153
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Tidskriftsartikel (refereegranskat)abstract
- A study is made using fabricated thermal resistors in combination with two-dimensional (2D) electrothermal simulations to determine the thermal conductivity of polycrystalline SiC, single-crystalline SiC, and Si. The results show that the poly-SiC substrate has thermal conductivity of κ poly-SiC = 2.7 W K−1 cm−1, which is significantly lower than that of single-crystalline SiC.
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| 12. |
- Li, Molan, et al.
(författare)
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Thermoelectric-Generator-Based DC-DC Conversion Networks for Automotive Applications
- 2011
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Ingår i: Journal of Electronic Materials. - : Springer Science and Business Media LLC. - 0361-5235 .- 1543-186X. ; 40:5, s. 1136-1143
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Tidskriftsartikel (refereegranskat)abstract
- Maximizing electrical energy generation through waste heat recovery is one of the modern research questions within automotive applications of thermoelectric (TE) technologies. This paper proposes a novel concept of distributed multisection multilevel DC-DC conversion networks based on thermoelectric generators (TEGs) for automotive applications. The concept incorporates a bottom-up design approach to collect, convert, and manage vehicle waste heat efficiently. Several state-of-the-art thermoelectric materials are analyzed for the purpose of power generation at each waste heat harvesting location on a vehicle. Optimal materials and TE couple configurations are suggested. Moreover, a comparison of prevailing DC-DC conversion techniques was made with respect to applications at each conversion level within the network. Furthermore, higher-level design considerations are discussed according to system specifications. Finally, a case study is performed to compare the performance of the proposed network and a traditional single-stage system. The results show that the proposed network enhances the system conversion efficiency by up to 400%.
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| 13. |
- Lotfi, Sara, et al.
(författare)
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Fabrication and Characterization of 150 mm Silicon-on-polycrystalline-Silicon Carbide Substrates
- 2012
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Ingår i: Journal of Electronic Materials. - : Springer Science and Business Media LLC. - 0361-5235 .- 1543-186X. ; 41:3, s. 480-487
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Tidskriftsartikel (refereegranskat)abstract
- Silicon-on-insulator (SOI) substrates can reduce RF-substrate losses due to their buried oxide (BOX). On the other hand, the BOX causes problems since it acts as a thermal barrier. Oxide has low thermal conductivity and traps the heat that is generated in devices on the SOI. This paper presents a hybrid substrate which uses a thin layer of poly-crystalline silicon and poly-crystalline silicon carbide (Si-on-poly-SiC) to replace the thermally unfavorable buried oxide and the silicon substrate. 150 mm substrates were fabricated by wafer bonding and shown to be stress and strain free. Various electronic devices and test structures were processed on the hybrid substrate as well as on a low resistivity SOI reference wafer. The substrates were characterized electrically and thermally and compared to each other. Results showed that the Si-on-poly-SiC wafer had a 2.5 times lower thermal resistance and was equally or better in electrical performance compared to the SOI reference wafer.
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| 14. |
- Ma, Yi, 1982, et al.
(författare)
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Electrochemical Deposition and Characterization of Thermoelectric Ternary (BixSb1-x)(2)Te-3 and Bi-2(Te1-ySey)(3) Thin Films
- 2012
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Ingår i: Journal of Electronic Materials. - : Springer Science and Business Media LLC. - 1543-186X .- 0361-5235. ; 41:6, s. 1138-1146
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Tidskriftsartikel (refereegranskat)abstract
- Thermoelectric thin films of the ternary compounds (Bi Sb1- )(2)Te-3 and Bi-2(Te1- Se )(3) were synthesized using potentiostatic electrochemical deposition on gold-coated silicon substrates from aqueous acidic solutions at room temperature. The surface morphology, elemental composition, and crystal structure of the deposited films were studied and correlated with preparation conditions. The thermoelectric properties of (Bi Sb1- )(2)Te-3 and Bi-2(Te1- Se )(3) films, i.e., Seebeck coefficient and electrical resistivity, were measured after transferring the films to a nonconductive epoxy support. (Bi Sb1- )(2)Te-3 thin films showed -type semiconductivity, and the highest power factor was obtained for film deposited at a relatively large negative potential with composition close to Bi0.5Sb1.5Te3. In addition, Bi-2(Te1- Se )(3) thin films showed -type semiconductivity, and the highest power factor was obtained for film deposited at a relatively small negative potential, having composition close to Bi2Te2.7Se0.3. In contrast to Bi2Te2.7Se0.3 thin films, an annealing treatment was required for Bi0.5Sb1.5Te3 thin films to achieve the same magnitude of power factor as Bi2Te2.7Se0.3. Therefore, Bi2Te2.7Se0.3 thin films appear to be good candidates for multilayer preparation using electrochemical deposition, but the morphology of the films must be further improved.
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| 15. |
- Majdi, Saman, et al.
(författare)
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Characterization by Internal Photoemission Spectroscopy of Single-Crystal CVD Diamond Schottky Barrier Diodes
- 2010
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Ingår i: Journal of Electronic Materials. - : Springer Science and Business Media LLC. - 0361-5235 .- 1543-186X. ; 39:8, s. 1203-1208
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Tidskriftsartikel (refereegranskat)abstract
- Internal photoemission spectroscopy measurements have been performed to study the electrical characteristics of Schottky diodes on boron-doped single-crystalline chemical vapor deposited (SC-CVD) diamond. These measurements were compared with current-voltage (I-V) and current-temperature (I-T) measurements. Schottky contact barrier heights and ideality factors have been measured on Schottky contacts formed on four samples with Au, Ni, and Al contact metallizations. I-V and I-T measurements were performed in the temperature range from 300 K to 500 K. The internal photoemission method, which is less influenced by local variations in the Schottky barrier height than the other two methods, yielded the highest values of Schottky barrier heights to p-type material: I broken vertical bar(B) = 1.78 eV to 2.10 eV, depending on the choice of contact metal and sample boron concentration.
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| 16. |
- Saleemi, Mohsin, et al.
(författare)
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Evaluation of the Structure and Transport Properties of Nanostructured Antimony Telluride (Sb2Te3)
- 2014
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Ingår i: Journal of Electronic Materials. - : Springer Science and Business Media LLC. - 0361-5235 .- 1543-186X. ; 43:6, s. 1927-1932
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Tidskriftsartikel (refereegranskat)abstract
- Antimony telluride, (Sb2Te3), and its doped derivatives are considered to be among the best p-type thermoelectric (TE) materials for room temperature (300-400 K) applications. However, it is still desirable to develop rapid and economical routes for large-scale synthesis of Sb2Te3 nanostructures. We report herein a high yield, simple and easily scalable synthetic method for polycrystalline Sb2Te3 nanostructures. Prepared samples were compacted into dense pellets by use of spark plasma sintering. The products were characterized by x-ray diffraction and scanning electron microscopy. To investigate the anisotropic behavior of Sb2Te3 TE transport property measurements were performed along and perpendicular to the direction of compaction. Thermal conductivity, electrical conductivity, and Seebeck coefficient measurement over the temperature range 350-525 K showed that the anisotropy of the material had a large effect on TE performance.
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| 17. |
- Sarius, N. G., et al.
(författare)
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Contact Resistance of Ti-Si-C-Ag and Ti-Si-C-Ag-Pd Nanocomposite Coatings
- 2012
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Ingår i: Journal of Electronic Materials. - : Springer Science and Business Media LLC. - 0361-5235 .- 1543-186X. ; 41:3, s. 560-567
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Tidskriftsartikel (refereegranskat)abstract
- Ti-Si-C-Ag-Pd and Ti-Si-C-Ag nanocomposite coatings were deposited by direct-current magnetron sputtering on Cu substrates with an electroplated Ni layer. Analytical electron microscopy, x-ray diffraction, and x-ray photoelectron spectroscopy show that the nanocomposites consist of TiC, Ag:Pd, and amorphous SiC. The contact resistance of these coatings against a spherical Au-Co surface was measured for applied contact forces up to 5 N. Ti-Si-C-Ag-Pd coatings with Ag:Pd top coating had similar to 10 times lower contact resistance at contact forces below 1 N (similar to 10 m Omega at similar to 0.1 N), and 2 to 3 times lower for contact forces around 5 N (< 1 m Omega at 5 N), compared with the Ti-Si-C-Ag coating.
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| 18. |
- Ščajev, Patrik, et al.
(författare)
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Comparative Studies of Carrier Dynamics in 3C-SiC Layers Grown on Si and 4H-SiC Substrates
- 2011
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Ingår i: Journal of Electronic Materials. - : Springer Science+Business Media B.V.. - 0361-5235 .- 1543-186X. ; 40:4, s. 394-399
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Tidskriftsartikel (refereegranskat)abstract
- Time-resolved nonlinear optical techniques were applied to determine the electronic parameters of cubic silicon carbide layers. Carrier lifetime, tau, and mobility, mu, were measured in a free-standing wafer grown on undulant Si and an epitaxial layer grown by hot-wall chemical vapor deposition (CVD) on a nominally on-axis 4H-SiC substrate. Nonequilibrium carrier dynamics was monitored in the 80 K to 800 K range by using a picosecond free carrier grating and free carrier absorption techniques. Correlation of tau(T) and mu (a)(T) dependencies was explained by the strong contribution of diffusion-limited recombination on extended defects in the layers. A lower defect density in the epitaxial layer on 4H-SiC was confirmed by a carrier lifetime of 100 ns, being similar to 4 times longer than that in free-standing 3C.
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| 19. |
- Virshup, Ariel, et al.
(författare)
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Improved Thermal Stability Observed in Ni-Based Ohmic Contacts to n-Type SiC for High-Temperature Applications
- 2011
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Ingår i: JOURNAL OF ELECTRONIC MATERIALS. - : Springer Science Business Media. - 0361-5235 .- 1543-186X. ; 40:4, s. 400-405
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Tidskriftsartikel (refereegranskat)abstract
- The high-temperature stability of a Pt/TaSi2/Ni/SiC ohmic contact metallization scheme was characterized using a combination of current-voltage measurements, Auger electron spectroscopy, and transmission electron microscopy imaging and associated analytical techniques. Increasing the thicknesses of the Pt and TaSi2 layers promoted electrical stability of the contacts, which remained ohmic at 600A degrees C in air for the extent of heat treatment; the specific contact resistance showed only a gradual increase from an initial value of 5.2 x 10(-5) Omega cm(2). We observed a continuous silicon oxide layer in the thinner contact structures, which failed after 36 h of heating. Meanwhile, thicker contacts with enhanced stability contained a much lower oxygen concentration that was distributed across the contact layers, precluding the formation of an electrically insulating contact structure.
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| 20. |
- Xu, Shaohui, et al.
(författare)
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Modeling and Optimization of Thermoelements by a Combined Analytical and Numerical Method
- 2014
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Ingår i: Journal of Electronic Materials. - : Springer Science and Business Media LLC. - 0361-5235 .- 1543-186X. ; 43:2, s. 404-413
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Tidskriftsartikel (refereegranskat)abstract
- A combined analytical and numerical process has been developed to model and optimize thermoelements. In this way, the performance of commercial n- and p-type thermoelectric materials can be optimized to deliver the maximum output power and conversion efficiency. The validity of the method is demonstrated using a silicon germanium unicouple.
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| 21. |
- Yastrubchak, O., et al.
(författare)
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Ion-Implantation Control of Ferromagnetism in (Ga,Mn)As Epitaxial Layers
- 2010
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Ingår i: Journal Of Electronic Materials. - : Springer Science and Business Media LLC. - 0361-5235 .- 1543-186X. ; 39:6, s. 794-798
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Konferensbidrag (refereegranskat)abstract
- Epitaxial layers of (Ga,Mn)As ferromagnetic semiconductor have been subjected to low-energy ion implantation by applying a very low fluence of either chemically active, oxygen ions or inactive ions of neon noble gas. Several complementary characterization techniques have been used with the aim of studying the effect of ion implantation on the layer properties. Investigation of their electrical and magnetic properties revealed that implantation with either O or Ne ions completely suppressed both the conductivity and ferromagnetism in the layers. On the other hand, Raman spectroscopy measurements evidenced that O ion implantation influenced optical properties of the layers noticeably stronger than did Ne ion implantation. Moreover, structural modifications of the layers caused by ion implantation were investigated using high-resolution x-ray diffraction technique. A mechanism responsible for ion-implantation-induced suppression of the conductivity and ferromagnetism in (Ga,Mn)As layers, which could be applied as a method for tailoring nanostructures in the layers, is discussed in terms of defects created in the layers by the two implanted elements.
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