| 1. |
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| 2. |
- Toropov, A. A., et al.
(författare)
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Exciton magnetic polarons in a type II ZnMnSe/ZnSSe superlattice
- 2004
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Ingår i: Physica status solidi (c)Special Issue: 11th International Conference on II–VI Compounds (II–VI 2003)Volume 1, Issue 4. - physica status solidi (c), Vol. 1, Issue 4 : WileyVCH. ; , s. 847-850
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Konferensbidrag (refereegranskat)abstract
- We present a time-resolved experimental study of excitonic magnetic polaron (EMP) dynamics in type II quantum wells ZnMnSe/ZnSSe. Two photoluminescence peaks were observed, which reflects coexistence of localized excitons and EMPs in the same sample. This was possible due to the competition of two localization mechanisms - magnetic localization of heavy holes in the ZnMnSe layers and non-magnetic localization of electrons in the ZnSSe layers.
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| 3. |
- Toropov, A. A., et al.
(författare)
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InAs/Zn(Mn)Te/Cd(Mn)Se pseudomorphic quantum well structures for spintronic applications
- 2004
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Ingår i: 11th International Conference on II-VI Compounds,2003. - : WileyVCH. ; , s. 704-
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Konferensbidrag (refereegranskat)abstract
- Zn(Mn)Te/Cd(Mn)Se quantum well heterostructures have been grown pseudomorphically on InAs(001) substrates using original InAs surface preparation techniques. The structures demonstrated bright PL in the 1-1.3 eV range and the effect of giant Zeeman splitting in the external magnetic field.
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| 4. |
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| 5. |
- Buyanova, Irina, 1960-, et al.
(författare)
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On the spin injection in ZnMnSe/ZnCdSe heterostructures
- 2002
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Konferensbidrag (refereegranskat)abstract
- We present results from a detailed study of spin injection in thin II-VI wide band gap semiconductor heterostructures by magnetooptical spectroscopy. It is shown that efficient spin alignment can be achieved in a diluted magnetic semiconductor barrier (a layer of ZnMnSe or ZnMnSe/CdSe superlattice) as thin as 10 nm. Rather efficient spin injection from such a thin spin aligner to a non-magnetic quantum well is demonstrated, even when the tunneling energy barrier is as thick as 10 nm. The effect of spin relaxation process on spin injection is also closely examined.
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| 6. |
- Buyanova, Irina, 1960-, et al.
(författare)
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Tunable laser spectroscopy of spin injection in ZnMnSe/ZnCdSe quantum structures
- 2002
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 81:12, s. 2196-
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Tidskriftsartikel (refereegranskat)abstract
- Magneto-optical spectroscopy in combination with tunable laser excitation is employed to study exciton spin alignment and injection in ZnMnSe/ZnCdSe quantum structures. This approach enables us to selectively create preferred spin orientation and to separately monitor subsequent spin injection from individual spin states, thus shedding light on a possible source of spin loss. It is shown that the limited spin polarization in a nonmagnetic quantum well due to spin injection from a ZnMnSe-based diluted magnetic semiconductor (DMS) is not caused by a limited degree of spin alignment in the DMS, which is in fact complete, but rather occurs during subsequent processes.
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| 7. |
- Chen, Weimin, 1959-, et al.
(författare)
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Efficient spin depolarization in ZnCdSe spin detector : an important factor limiting optical spin injection efficiency in ZnMnSe/CdZnSe spin light-emitting structures
- 2004
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 85, s. 5260-
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Tidskriftsartikel (refereegranskat)abstract
- Spin depolarization of a ZnCdSe quantum-well spin detector (SD) in ZnMnSe/ZnCdSe light-emitting quantum structures is investigated by cw and time-resolved optical orientation spectroscopy. It is shown that spin depolarization is governed by three distinct spin relaxation processes with the corresponding polarization decay times of 850, 30, and <10 ps. The dominant and the fastest process is attributed to spin relaxation accompanying energy relaxation of hot excitons (and hot carriers) within the SD, providing evidence that it can be an important source of spin loss, leading to the observed limited efficiency of optical spin injection in the structures.
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| 8. |
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| 9. |
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| 10. |
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| 11. |
- Terentev, Ya. V., et al.
(författare)
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Semimagnetic ZnMnSe/CdSe Fractional Monolayer Superlattice as an Injector of Spin-Polarized Carriers
- 2002
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Ingår i: Physica status solidi. B, Basic research. - 0370-1972 .- 1521-3951. ; 229:2, s. 765-768
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Tidskriftsartikel (refereegranskat)abstract
- We report on effective injection of spin-oriented carriers from a semimagnetic semiconductor structure to a non-magnetic ZnCdSe/ZnSe quantum well (QW). A short-period ZnMnSe/CdSe fractional monolayer superlattice was used as a spin injector. The carriers are photo-generated in the semimagnetic region, spin-polarized via the effect of giant Zeeman splitting and then injected into the non-magnetic QW. The spin injection efficiency was estimated by circular polarization measurements of recombination emission from the QW. The maximal detected degree of the spin polarization is about 25%.
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| 12. |
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| 13. |
- Toropov, A. A., et al.
(författare)
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ZnMnSe/ZnSSe Type-II semimagnetic superlattices : Growth and magnetoluminescence properties
- 2002
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Ingår i: Semiconductors (Woodbury, N.Y.). - : Pleiades Publishing Ltd. - 1063-7826 .- 1090-6479. ; 36:11, s. 1288-1293
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Tidskriftsartikel (refereegranskat)abstract
- A ZnSSe/ZnMnSe type-II semimagnetic superlattice was pseudomorphically grown via molecular beam epitaxy on a GaAs substrate. The superlattice-layer thicknesses and compositions were chosen so that compressive strains in the ZnMnSe layer compensated tensile strains in the ZnSSe layer. The photoluminescence spectra in an external magnetic field demonstrate the effect of giant Zeeman splitting of an exciton. Simulation of the luminescence-line shift in a magnetic field allowed us to determine more accurately the band offsets at the ZnSSe/ZnMnSe interface.
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| 14. |
- Buyanova, Irina, 1960-, et al.
(författare)
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Control of spin functionality in ZnMnSe-based structures : Spin switching versus spin alignment
- 2003
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 82:11, s. 1700-
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Tidskriftsartikel (refereegranskat)abstract
- The ability of attaining desired spin functionality by adjusting structural design is demonstrated in diluted magnetic semiconductor (DMS) quantum structures based on II-VI semiconductors. The following spin enabling functions are achieved by tuning the ratio between the rates of exciton spin relaxation within the DMS and exciton escape from it to an adjacent nonmagnetic spin detector. Spin switching is realized when using a thin layer of Zn0.95Mn0.05Se as a spin manipulator and is attributed to a fast exciton escape from the DMS preceding the spin relaxation. Spin alignment is accomplished in tunneling structures where the presence of an energy barrier inserted between a spin manipulator (a DMS-based superlattice) and a spin detector ensures a slow escape rate from the DMS layer.
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| 15. |
- Buyanova, Irina, 1960-, et al.
(författare)
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Direct experimental evidence for unusual effects of hydrogen on the electronic and vibrational properties of GaNxP1−x alloys : a proof for a general property of dilute nitrides
- 2004
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Ingår i: Physical Review B Condensed Matter. - 0163-1829 .- 1095-3795. ; 70:24, s. 245215-245219
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Tidskriftsartikel (refereegranskat)abstract
- Direct experimental evidence for dramatic effects of hydrogen incorporation on the electronic structure and lattice properties of GaNxP1−x alloys is presented. By employing photoluminescence excitation spectroscopy, postgrowth hydrogenation is shown to reopen the band gap of the GaNP alloys and to efficiently reduce the N-induced coupling between the conduction band states. By Raman spectroscopy, these effects are shown to be accompanied by hydrogen-induced breaking of the Ga-P bond in the alloy, evident from disappearance of the corresponding vibrational mode. According to the performed Raman and x-ray diffraction measurements, the hydrogenation is also found to cause a strong expansion of the GaNP lattice, which changes the sign of strain from tensile in the as-grown GaNP epilayers to compressive in the posthydrogenated structures, due to the formation of complexes between N and H.
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| 16. |
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| 17. |
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| 18. |
- Buyanova, Irina, 1960-, et al.
(författare)
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Exciton Spin Manipulation in ZnMnSe-Based Structures
- 2003
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Konferensbidrag (refereegranskat)abstract
- Strong effect of structural design on spin functionality is observed in quantum structures based on II-VI semiconductors. Spin switching is realized when using a thin layer of Zn0.95Mn0.05Se diluted magnetic semiconductor (DMS) as a spin manipulator. This is evident from the polarization of photoluminescence related to a spin detector (an adjacent nonmagnetic quantum well (QW)) measured under the resonant excitation of the spin-up and spin-down states of the DMS, which is identical in value but opposite in sign. The achieved spin switching is suggested to reflect fast carrier diffusion from the DMS due to the absence of an energy barrier between the upper spin state of the DMS layer and the QW. On the other hand, the spin alignment is accomplished in the tunneling structures where the presence of the energy barrier inserted between a spin manipulator (i.e., a ZnMnSe/CdSe DMS superlattice) and a spin detector ensures a slow escape rate from the DMS layer.
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| 19. |
- Buyanova, Irina, 1960-, et al.
(författare)
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Resonant suppression of exciton spin relaxation in Zn0.96Mn0.04Se/CdSe superlattices
- 2003
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Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 93:10, s. 7352-
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Tidskriftsartikel (refereegranskat)abstract
- Spin relaxation processes in strained Zn0.96Mn0.04Se/CdSe superlattices are studied in detail by using hot photoluminescence combined with tunable excitation spectroscopy. A drastic enhancement in occupation of the upper-lying |+1/2,-3/2> state of the heavy-hole excitons is observed when excitation photon energy is resonantly tuned near an integer number of the LO phonon energy above the |+1/2,-3/2> state. Assuming the Boltzmann distribution between the excitonic states, the spin temperature of the excitons is deduced to be as high as 85 K, well above the lattice temperature of 2 K. The observed behavior provides experimental evidence for a surprisingly strong suppression of spin relaxation from the upper spin-split excitonic branch for small values of wave vector.
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| 20. |
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| 21. |
- Izadifard, Morteza, 1965-, et al.
(författare)
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Effects of rapid thermal annealing on optical quality of GaNP alloys
- 2004
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Ingår i: EMRS-2004 Spring Meeting,2004. - : Institution of Engineering and Technology (IET). ; , s. 335-
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Konferensbidrag (refereegranskat)abstract
- Significant improvements in radiative efficiency of GaNP epilayers grown on GaP substrates by solid-source molecular beam epitaxy (MBE) are achieved by post-growth rapid thermal annealing (RTA). From temperature-dependent CW and time-resolved photoluminescence (PL) spectroscopies combined with PL excitation measurements, the observed improvements are attributed to annealing out of competing nonradiative centres. This conclusion is supported by the following experimental evidence: reduced thermal quenching of the PL intensity resulting in a substantial (up to 18 times) increase at room temperature (RT) after RTA, and simultaneous improvements in carrier lifetime at RT deduced from time-resolved PL measurements.
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| 22. |
- Izadifard, Morteza, 1965-, et al.
(författare)
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Evaluation of optical quality and defect properties of GaNxP1−x alloys lattice matched to Si
- 2004
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 85, s. 6347-
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Tidskriftsartikel (refereegranskat)abstract
- By using a variety of optical characterization techniques, including cathodoluminescence, temperature-dependent cw- and time-resolved photoluminescence (PL), and PL excitation spectroscopies, high optical quality of the GaN0.018P0.982 epilayers lattice matched to Si substrates is demonstrated and is shown to be comparable to that of the “state-of-the-art” GaNP alloys grown on GaP substrates. The growth of GaNP on Si is, however, found to facilitate the formation of several point defects, including complexes involving Ga interstitial atoms (Gai).
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| 23. |
- Polimeni, A., et al.
(författare)
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Hydrogen related effects in diluted nitrides
- 2003
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Ingår i: 22nd Int. Conf. on Defects in Semiconductors,2003. - : Elsevier. ; , s. 371-
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Konferensbidrag (refereegranskat)abstract
- Hydrogen irradiation leads to the passivation of the electronic activity of nitrogen in Ga(AsN), thus allowing a fine tuning of the material optical properties. Here, some recent results on the effects that hydrogen irradiation has on the electronic properties of diluted III-N-V alloys are presented. In Ga(AsN), both the increase in the electron effective mass and exciton wave function localization induced by nitrogen are reversed in a fully controllable manner by hydrogen irradiation. In Ga(PN), hydrogen widens the band gap and exposes gradually in the gap nitrogen complex states formerly resonant with the conduction band.
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| 24. |
- Polyakov, A. Y., et al.
(författare)
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Electrical and luminescent properties and the spectra of deep centers in GaMnN/InGaN light-emitting diodes
- 2004
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Ingår i: Journal of Electronic Materials. - : Springer Science and Business Media LLC. - 0361-5235 .- 1543-186X. ; 33:3, s. 241-247
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Tidskriftsartikel (refereegranskat)abstract
- Electrical and electroluminescent properties were studied for GaN/InGaN light-emitting diodes (LEDs) with the n-GaN layer up and with the top portion of the n layer made of undoped GaMnN to allow polarization modulation by applying an external magnetic field (so-called -spin-LEDs-). The contact annealing temperature was kept to 750°C, which is the thermal stability limit for retaining room-temperature magnetic ordering in the GaMnN layer. Measurable electroluminescence (EL) was obtained in these structures at threshold voltages of ∼15 V, with a lower EL signal compared to control LEDs without Mn. This is related to the existence of two parasitic junctions between the metal and the lower contact p-type layer and between the GaMnN and the n-GaN in the top contact layer.
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| 25. |
- Thinh, N. Q., et al.
(författare)
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Identification of Ga-interstitial defects in GaNyP1−y and AlxGa1−xNyP1−y
- 2004
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Ingår i: Physical Review B. Condensed Matter and Materials Physics. - : APS. - 1098-0121 .- 1550-235X. ; 70:12, s. 121201-
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Tidskriftsartikel (refereegranskat)abstract
- Two Ga -interstitial (Gai) defects are identified by optically detected magnetic resonance as common grown-in defects in molecular beam epitaxial GaNyP1−y and AlxGa1−xNyP1−y. Characteristic hyperfine structure arising from spin interaction between an unpaired electron and a Ga nucleus is clearly resolved. The observed strong and nearly isotropic hyperfine interaction reveals an electron wave function of A1 symmetry that is highly localized at the Gai and thus a deep-level defect. Our analysis based on first-principles calculations suggests that these defects are complexes containing one Gai2+ .
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