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| 2. |
- Angelov, Iltcho, 1943, et al.
(författare)
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CMOS large signal model for CAD
- 2003
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Ingår i: 2003 IEEE MTT-S International Microwave Symposium Digest. ; 2, s. 643-646
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Konferensbidrag (refereegranskat)
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| 7. |
- Masud, M. Anowar, 1971, et al.
(författare)
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90 nm CMOS MMIC amplifier
- 2004
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Ingår i: Radio Frequency Integrated Circuits (RFIC) Symposium, 2004. Digest of Papers. 2004 IEEE. - 1529-2517. ; , s. 201 - 204
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Konferensbidrag (refereegranskat)abstract
- Small signal amplifiers at 20 and 40 GHz, based on a 90 nm CMOS process are demonstrated. A gain of 5.8 dB at 20 GHz for single stage has been obtained with a 1 dB compression point at 1 dBm. The corresponding figures for the 40 GHz amplifiers are 6 dB and -5.75 dBm. Noise figure for the 20 GHz amplifier is 6.4 dB. Both single gate access and double gate access transistors have been used in the design. DC power consumption of the 20 GHz single stage amplifier was found to be 10 mW whereas for the 40 GHz double stage amplifier it is approximately 19 mW. Total circuit area is 0.7/spl times/0.8 mm/sup 2/ for the single stage and 1/spl times/0.7 mm/sup 2/ for the 40 GHz double stage amplifier.
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| 8. |
- Vickes, Hans-Olof, et al.
(författare)
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The influence of the gate leakage current and the gate resistance on the noise and gain performances of 90-nm CMOS for micro- and millimeter-wave frequencies
- 2004
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Ingår i: Microwave Symposium Digest , 2004 IEEE MTT-S International. - 0149-645X. ; 2, s. 971-974
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Tidskriftsartikel (refereegranskat)abstract
- We report the experimental and theoretical evaluation of the noise and the high frequency gain performances applied to a very short channel 90-nm CMOS transistor. We show that gate leakage currents modify the behavior of the noise parameters Rn, Fmin and Zopt only in the low gigahertz range. The gate resistance, Rg, on the contrary, have influence on the noise performance over the complete frequency range. Noise parameters have been measured in the frequency range 2-26 GHz and the S-parameters have been measured up to 62.5 GHz. The proposed model has been used in the design of a 2-stage 40 GHz amplifier.
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| 9. |
- Zirath, Herbert, 1955, et al.
(författare)
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Development of 60-GHz Front -End Circuits for a High-Data-Rate Communication System.
- 2004
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Ingår i: IEEE Journal of Solid-State Circuits. - 0018-9200. ; 39:10, s. 1640-1649
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Tidskriftsartikel (refereegranskat)abstract
- Recent results from a Swedish program for development of 60-GHz monolithic microwave integrated circuits (MMICs) for high-data-rate communication links are presented. Front-end circuits such as mixers, amplifiers, frequency multipliers, IF amplifiers with gain control, and voltage-controlled oscillators (VCOs) have been realized utilizing GaAs PHEMT and MHEMT technologies. A newly developed 7.5-GHz coupled Colpitt VCO shows a minimum phase noise of -95 dBc at 100 kHz offset. A second-harmonic 14-GHz VCO shows a minimum phase noise of less than -90 dBc at 100 kHz. A novel balanced 7-28-GHz MMIC frequency quadrupler is described and compared with a single-ended quadrupler at the same input frequencies. To demonstrate its feasibility and potential application, the quadrupler is combined with the Colpitt VCO and the output characteristics of the resulting 30-GHz MMIC source are measured. A three-stage MHEMT wide-band amplifier covering 43-64 GHz with a gain of 24 dB, a minimum noise figure of 2.5 dB, and a passband ripple of 2 dB is also described. In future 60-GHz systems for mass markets where cost is of utmost importance, Si-based technologies, especially CMOS, are highly interesting. Some recent circuit results based on a 90-nm CMOS technology are also reported.
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