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Träfflista för sökning "WFRF:(Ivan M) srt2:(1996-1999)"

Sökning: WFRF:(Ivan M) > (1996-1999)

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1.
  • Frey, Sharon, et al. (författare)
  • Interference of antibody production to hepatitis B surface antigen in a combination hepatitis A/hepatitis B vaccine
  • 1999
  • Ingår i: Journal of Infectious Diseases. - : Oxford University Press (OUP). - 0022-1899 .- 1537-6613. ; 180:6, s. 2018-2022
  • Tidskriftsartikel (refereegranskat)abstract
    • A randomized trial comparing 3 manufacturing consistency lots of a combination hepatitis A/hepatitis B vaccine to each other and to hepatitis A vaccine and hepatitis B vaccine given separately and concurrently was done to evaluate safety, tolerability, and immunogenicity. Healthy volunteers >/=11 years of age were divided into 4 groups. Each of 3 groups received a separate consistency lot of the combination vaccine, and 1 group received separate but concurrent injections of hepatitis A and hepatitis B vaccines. Injections were given at weeks 0 and 24. The combination vaccine was generally well tolerated. The hepatitis A portion of the combination vaccine produced clinically acceptable high seropositivity rates 4 and 52 weeks after the first injection. The hepatitis B portion of the vaccine did not produce clinically acceptable seropositivity rates 4 weeks after the second injection. Lack of antibody production may be attributed, at least in part, to immunologic interference.
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2.
  • Johansson, M P, et al. (författare)
  • Low-temperature deposition of cubic BN : C films by unbalanced direct current magnetron sputtering of a B4C target
  • 1996
  • Ingår i: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films. - : American Institute of Physics (AIP). - 0734-2101 .- 1520-8559. ; 14:6, s. 3100-3107
  • Tidskriftsartikel (refereegranskat)abstract
    • Controllable-unbalanced de magnetron sputtering of a B4C target in mixed Ar-N-2 discharges has been used to deposit BN:C thin films with carbon concentrations in the range of 5-21 at, % on Si(001) substrates. The variation of the nitrogen gas consumption with nitrogen partial pressure was used to determine the sorption capacity of the sputtering source and was then correlated to the film discharge plasma density near the substrate in a wide range. Hence, the ion flux J(i) of primary Ar+ and N-2(+) ions accelerated to the substrate by an applied negative substrate bias could be varied while keeping the deposition flux J(n) (the sum of film building species, B, C, and N atoms) near constant. BN:C films were grown at large ion-to-neutral flux ratios 3 less than or equal to J(i)/J(n) less than or equal to 24, ion energies E(i) less than or equal to 500 eV, and substrate temperatures 150 less than or equal to T-s less than or equal to 350 degrees C. The phase and elemental composition of as-deposited BN:C films were characterized by Fourier transform infrared spectroscopy and wavelength dispersive x-ray spectroscopy, respectively. Deposition of cubic phase c-BN:C containing 5-7 at. % of C is demonstrated under conditions of low energy (110 eV) ion bombardment, a high ion-to-atom arrival rate ration (J(i)/J(n) similar to 24), and low growth temperatures (similar to 150 degrees C). (C) 1996 American Vacuum Society.
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