| 1. |
- Johansson, MKJ, et al.
(författare)
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Adsorption of C-60 on Al(111) studied with scanning tunnelling microscopy
- 1998
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Ingår i: SURFACE SCIENCE. - : ELSEVIER SCIENCE BV. - 0039-6028. ; 397:1-3, s. 314-321
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Tidskriftsartikel (övrigt vetenskapligt/konstnärligt)abstract
- Scanning tunnelling microscopy has been used to study the adsorption and interactions of C-60 on Al(111) at room temperature. Initially, C-60 forms chains of molecules on the lower terraces of step edges, which indicates that the molecules have a high mob
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| 2. |
- Johansson, MKJ, et al.
(författare)
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Scanning tunneling microscopy of C-60/Al(111)-6x6: Inequivalent molecular sites and electronic structures
- 1996
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Ingår i: PHYSICAL REVIEW B-CONDENSED MATTER. - : AMER INST PHYSICS. - 0163-1829. ; 54:19, s. 13472-13475
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Tidskriftsartikel (övrigt vetenskapligt/konstnärligt)abstract
- We present a scanning tunneling microscopy and spectroscopy (STM/S) study of a thermally stable, annealed monolayer of C-60 On Al(111). The C-60 molecules are arranged into a close-packed hexagonal layer of 2 root 3 x 2 root 3 periodicity with the symmetr
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| 3. |
- MAXWELL, AJ, et al.
(författare)
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C-60 ON AL(111) - COVALENT BONDING AND SURFACE RECONSTRUCTION
- 1995
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Ingår i: PHYSICAL REVIEW B-CONDENSED MATTER. - : AMER INST PHYSICS. ; 52:8
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Annan publikation (övrigt vetenskapligt/konstnärligt)abstract
- We present photoemission and C 1s photoabsorption data for an annealed monolayer C-60/Al(111), which show that a strong covalent bond is formed between the C-60 molecules and the substrate. Low-energy electron-diffraction and scanning tunneling microscopy
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| 4. |
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| 5. |
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| 6. |
- Butorin, SM, et al.
(författare)
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Resonant photoemission from vanadium compounds with excitation near V 2p threshold
- 1999
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Ingår i: JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA. - : ELSEVIER SCIENCE BV. - 0368-2048. ; 103, s. 739-743
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Tidskriftsartikel (övrigt vetenskapligt/konstnärligt)abstract
- Valence-band photoemission measurements were performed on VC0.80, VN0.89, VF3, and VF2+x at various photon energies across V 2p absorption edges. While on-resonance spectra of VC0.80 and VN0.89 are dominated by V LW Auger lines, strongly resonating struct
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| 7. |
- GREHK, TM, et al.
(författare)
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CLEAN AND CS-EXPOSED SI(111)ROOT-3X-ROOT-3-B SURFACE STUDIED WITH HIGH-RESOLUTION PHOTOEMISSION
- 1995
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Ingår i: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 52:15, s. 11165-11171
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Tidskriftsartikel (refereegranskat)abstract
- Both the clean and Cs-exposed Si(111)root 3X root 3R30 degrees:B surfaces have been investigated by high-resolution photoemission. In the spectra from the Si 2p level, contributions were identified from the bulk, the adatoms plus the first layer, the second and 2/3 ML of the third-layer atoms not binding to the B atoms, and, finally, the 1/3 ML of third-layer atoms binding to the boron atoms. The interaction between the Cs atoms and the surface is found to be dependent on the coverage. At low coverages the geometric and electronic structure of the Si(111)root 3X root 3R30 degrees:B interface is only to a minor degree affected by the presence of Cs on the surface. At high coverage the Cs atoms react with the surface and alter the binding configuration of the Si adatoms.
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| 8. |
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| 9. |
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