Scanning tunneling microscopy of CdSe single crystal cleaved and "real" surface

• Ultrahigh vacuum-cleaved and as-grown surfaces of CdSe single crystals were investigated by scanning tunneling microscopy. The single crystals were grown by Reynolds-Green method. Striations and terrace-step structure have been found. The surface atomic geometry was found and investigated. The (1120) face geometry (structure formed by elementary cell of 0.75 × 0.7 nm2) as well as other type structures (e.g., 2.1 × 0.75 nm2 elementary cell) have been determined. The variations of the band gap at the surface have been found. The band values in the range 2.0-2.6 eV on a cleaved surface and 1.1-2.0 eV on an as-grown surface were measured and explained as being the influence of surface relaxation and gas adsorption. © 1994.

Subject headings

NATURVETENSKAP  -- Fysik -- Den kondenserade materiens fysik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences -- Condensed Matter Physics (hsv//eng)

Keyword

Band structure

Crystal atomic structure

Energy gap

Epitaxial growth

Microscopic examination

Band gap

Scanning tunneling microscopy

Semiconducting cadmium selenide

Surface relaxation

Semiconducting cadmium compounds

Publication and Content Type

ref (subject category)

art (subject category)