| 1. |
- Kuroki, S. -I, et al.
(författare)
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4H-SiC pseudo-CMOS logic inverters for harsh environment electronics
- 2017
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Ingår i: 11th European Conference on Silicon Carbide and Related Materials, ECSCRM 2016. - : Trans Tech Publications. - 9783035710434 ; , s. 669-672
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Konferensbidrag (refereegranskat)abstract
- For logic gate with higher voltage swing, 4H-SiC pseudo-CMOS logic inverter with four nMOS was suggested and demonstrated, and a high voltage swing of 4.4 V was achieved at VDD=5 V. Simple nMOS inverters were also investigated. Both of pseudo-CMOS and nMOS inverters were operated at a high temperature of 200ºC. For future SiC large integrated circuits, junction leakage current between n+ regions were also investigated with the comb-shaped test elements.
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| 2. |
- Kuroki, S. I., et al.
(författare)
-
Characterization of 4H-SiC nMOSFETs in harsh environments, high-temperature and high gamma-ray radiation
- 2016
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Ingår i: 16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015. - : Trans Tech Publications Ltd. - 9783035710427 ; , s. 864-867
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Konferensbidrag (refereegranskat)abstract
- Characteristics of 4H-SiC nMOSFETs with arsenic-doped S/D and NbNi silicide contacts in harsh environments of high-temperature up to 450°C, and high gamma-ray radiation up to over 100 Mrad, were investigated. At high temperature, field effect mobility increased as proportional to T3/2, and threshold voltage was shifted with temperature coefficients of -4.3 mV/K and -2.6 mV/K for oxide thicknesses of 10 nm and 20 nm, respectively. After Co60 gamma-ray exposure of 113 Mrad, the field effect mobility was varied within 8% for oxide thickness of 10 nm, however for 20 nm oxide thickness, this variation was 26%. The threshold voltage shifts were within 6%.
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| 3. |
- Nagatsuma, H., et al.
(författare)
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4H-SiC nMOSFETs with As-Doped S/D and NbNi silicide ohmic contacts
- 2016
-
Ingår i: 16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015. - : Trans Tech Publications Ltd. - 9783035710427 ; , s. 573-576
-
Konferensbidrag (refereegranskat)abstract
- 4H-SiC nMOSFETs with As-doped S/D and NbNi silicide ohmic contacts were demonstrated for radiation-hard CMOS electronics. The threshold voltage Vth was designed to be 3.0 V by TCAD simulation, and was 3.6 – 3.8 V at the fabricated devices. On / off ratio was approximately 105.
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