| 1. |
- Bruhn, Benjamin, et al.
(författare)
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Controlled fabrication of individual silicon quantum rods yielding high intensity, polarized light emission
- 2009
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Ingår i: Nanotechnology. - : Institute of Physics Publishing (IOPP). - 0957-4484 .- 1361-6528. ; 20:50, s. 1-5
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Tidskriftsartikel (refereegranskat)abstract
- Elongated silicon quantum dots (also referred to as rods) were fabricated using a lithographic process which reliably yields sufficient numbers of emitters. These quantum rods are perfectly aligned and the vast majority are spatially separated well enough to enable single-dot spectroscopy. Not only do they exhibit extraordinarily high linear polarization with respect to both absorption and emission, but the silicon rods also appear to luminesce much more brightly than their spherical counterparts. Significantly increased quantum efficiency and almost unity degree of linear polarization render these quantum rods perfect candidates for numerous applications.
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| 2. |
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| 3. |
- Janda, Petr, et al.
(författare)
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Modified spontaneous emission of silicon nanocrystals embedded in artificial opals
- 2007
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Ingår i: Journal of Physics D. - : IOP Publishing. - 0022-3727 .- 1361-6463. ; 40:19, s. 5847-5853
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Tidskriftsartikel (refereegranskat)abstract
- Si nanocrystals (NCs) were embedded in synthetic silica opals by means of Si-ion implantation or opal impregnation with porous-Si suspensions. In both types of sample photoluminescence (PL) is strongly Bragg-reflection attenuated (up to 75%) at the frequency of the opal stop-band in a direction perpendicular to the ( 1 1 1) face of the perfect hcp opal structure. Time-resolved PL shows a rich distribution of decay rates, which contains both shorter and longer decay components compared with the ordinary stretched exponential decay of Si NCs. This effect reflects changes in the spontaneous emission rate of Si NCs due to variations in the local density of states of real opal containing defects.
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| 4. |
- Sychugov, Ilya, et al.
(författare)
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Light emission from silicon nanocrystals: probing a single quantum do
- 2006
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Ingår i: Applied Surface Science. - : Elsevier. - 0169-4332 .- 1873-5584. ; 252:15, s. 5249-5253
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Tidskriftsartikel (refereegranskat)abstract
- Analysis of low-temperature photoluminescence measurements performed on single silicon nanocrystals is presented. The luminescence emission linewidth of Si nanocrystals is found to be less than thermal broadening at low temperature, confirming the atomic-like nature of their energetic states. Beside the main peak the low-temperature spectra reveal a similar to 6 meV replica, the origin of which is discussed. For some of the investigated dots, we also observe a similar to 60 meV transverse optical (TO) phonon replica. The regular arrangement of individual nanocrystals used in this work enables combined high-resolution transmission electron microscopy (TEM) and low-temperature photoluminescence characterization of the same single quantum dot.
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| 5. |
- Sychugov, Ilya, et al.
(författare)
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Luminescence blinking of a Si quantum dot in a SiO2 shell
- 2005
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Ingår i: Physical Review B. Condensed Matter and Materials Physics. - : The American Physical Society. - 1098-0121 .- 1550-235X. ; 71:11, s. 115331-1-115331-5
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Tidskriftsartikel (refereegranskat)abstract
- The phenomenon of on-off luminescence intermittency - blinking - in silicon nanocrystals was studied using a single-dot microphotoluminescence technique. From recordings of the luminescence intensity trace, on- and off-time distributions were extracted revealing exponential behavior, as expected for systems with blinking of a purely random nature. The corresponding switching rates for on-off and off-on processes exhibit different dependence on the excitation intensity. While the on-off switching rate grows quadratically with the excitation, the inverse process is nearly pumping power independent. Experimental findings are interpreted in terms of a dot "charging" model, where a carrier may become trapped in the surrounding matrix due to thermal and Auger-assisted processes. Observed blinking kinetics appear to be different from that of porous silicon particles.
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| 6. |
- Sychugov, Ilya, et al.
(författare)
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Narrow luminescence linewidth of a silicon quantum dot
- 2005
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Ingår i: Physical Review Letters. - : American Physical Society. - 0031-9007 .- 1079-7114. ; 94:8, s. 087405 (1)-087405 (4)
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Tidskriftsartikel (refereegranskat)abstract
- Single-dot luminescence spectroscopy was used to study the emission linewidth of individual silicon nanocrystals from low temperatures up to room temperature. The results show a continuous line narrowing towards lower temperatures with a linewidth as sharp as 2 meV at 35 K. This value, clearly below the thermal broadening at this temperature, proves the atomiclike emission from silicon quantum dots subject to quantum confinement. The low temperature measurements further reveal a similar to6 meV replica, whose origin is discussed. In addition, an similar to60 meV TO-phonon replica was detected, which is only present in a fraction of the dots.
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| 7. |
- Sychugov, Ilya, et al.
(författare)
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Single dot optical spectroscopy of silicon nanocrystals: Low temperature measurements
- 2005
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Ingår i: Optical materials (Amsterdam). - : Elsevier BV. - 0925-3467 .- 1873-1252. ; 27:5, s. 973-976
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Tidskriftsartikel (refereegranskat)abstract
- Single dot spectroscopy allows studying properties of a single nanocrystal avoiding inhomogeneous broadening of the emission band. Here, data obtained by this technique for Si nanocrystals fabricated by electron beam lithography, plasma etching and subsequent size-reduction by oxidation are presented. First, blinking (on–off intermittence) of the luminescence was observed for most individual nanocrystals, although some exhibited relatively stable luminescence. As a result of the quantum confinement effect spectra with different emission wavelengths for different nanocrystals were recorded. While at room temperature the full width at half-maximum of the nanocrystal emission peaks was measured to be 100–150 meV, at 80 K the linewidth for some dots appeared to be about 25 meV only. The observed temperature dependence of the homogeneous linewidth may lead to an understanding of the exciton–phonon interaction in indirect band-gap quantum dots.
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| 8. |
- Valenta, Jan, et al.
(författare)
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Light-Emission Performance of Silicon Nanocrystals Deduced from Single Quantum Dot Spectroscopy
- 2008
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Ingår i: Advanced Functional Materials. - : Wiley. - 1616-301X .- 1616-3028. ; 18:18, s. 2666-2672
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Tidskriftsartikel (refereegranskat)abstract
- Spectra of individual silicon nanocrystals within porous Si grains are studied by the wide-field imaging microspectroscopy and their ON-OFF, blinking is detected by the confocal single-photon-counting microscopy. Observed spectral and blinking properties comprise all features reported before in differently prepared single Si nanocrystals (SiNCs). Former apparently contradictory results are shown to be due to different experimental conditions. When the effect of dark periods (OFF switching) is removed the common ultimate photoluminescence properties Of SiO2 passivated SiNCs are found, namely the quantum efficiency (QE) of about 10-20% up to the pumping rate corresponding to one exciton average excitation per quantum dot. At higher pump rates the QE is slowly decreasing as the 0.7th power of excitation. This is most likely due to Auger recombination which, however, seems to be weakened compared with measurements of nanocrystal assemblies. We conclude that SiNCs may be pumped above one exciton occupancy to yield a higher light emission, being advantageous for applications.
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| 9. |
- Andersson, Henrik, 1975-
(författare)
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Position Sensitive Detectors : Device Technology and Applications in Spectroscopy
- 2008
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Doktorsavhandling (övrigt vetenskapligt/konstnärligt)abstract
- This thesis deals with the development, processing and characterization of position sensitive detectors and, in addition, to the development of compact and cost effective spectrometers. Position sensitive detectors are used to measure, with great accuracy and speed, the position of a light spot incident on the surface. Their main use is for triangulation, displacement and vibration measurements. A type of position sensitive detector based on the MOS principle and using optically transparent indium tin oxide as a gate contact has been developed. This type of detector utilizes the MOS principle where an induced channel forms beneath the gate oxide in the surface of the Silicon substrate. One and two dimensional detectors have both been fabricated and characterized. The first measurements showed that the linearity did not fulfil expectations and it was suspected that stress induced by the gate contact could be the reason for the seemingly high nonlinearity. Further investigations into both the p-n junction and the MOS type position sensitive detectors lead to the conclusion that the indium tin oxide gate is responsible for inducing a substantial stress in the surface of the detector, thus giving rise to increased position nonlinearity. The heat treatment step which was conducted was determined to be critical as either a too short or too long heat treatment resulted in stress in the gate and channel leading to position nonlinearity. If a correctly timed heat treatment is performed then the detector’s linearity is in parity with the best commercial position sensitive detectors. In addition, the development of very small, compact and cost effective spectrometers has been performed with the aim of constructing devices for use in the process industry. The development of a wedge shaped array of Fabry-Perot interferometers that can be mounted directly on top of a detector makes it possible to construct a very compact spectrometer using the minimum amount of optics. This wedge interferometer has been evaluated by means of array pixel detectors and position sensitive detectors for both the infrared and the visible wavelength ranges. When used with a position sensitive detector it is necessary to use a slit to record the intensity of the interferogram for many points over the detector, equivalent to pixels on an array detector. Usually the use of moving parts in a spectrometer will impose the use of high precision scanning mechanisms and calibration. By using a position sensitive detector for the interferogram readout both the position and the intensity are known for every measurement point and thus the demands placed on the scanning system are minimized.
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| 10. |
- Badel, Xavier, et al.
(författare)
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Doping of electrochemically etched pore arrays in n-type silicon : processing and electrical characterization
- 2005
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Ingår i: Journal of the Electrochemical Society. - : The Electrochemical Society. - 0013-4651 .- 1945-7111. ; 152:4, s. G252-G258
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Tidskriftsartikel (refereegranskat)abstract
- Silicon p-n diodes formed in the walls of deep pores have been electrically characterized. The pores were electrochemically etched in low-doped n-type silicon substrates, and the entire pore array was doped p(+) by boron diffusion at 1050 degrees C. Two different process flows were investigated to disconnect the p(+) layers from one pore to another. The first consists of removing a few micrometers of silicon at the top of the sample using reactive ion etching after diffusion while the second enables the prevention of doping at the top of the pore walls with an oxide, acting as a barrier during diffusion. Current-voltage and capacitance-voltage characteristics of p-n junctions are presented and related parameters, such as the serial resistance and the ideality factor are discussed. The results show good rectifying behavior of the diodes with a reverse current about four to five decades smaller than the forward current. Measurements with two pores connected in a transistor-like configuration (p(+)/n(-)/p(+)), were also performed. Device simulations were used to examine the device behavior. Finally, our results demonstrate that pores could work as individual detector pixels for moderate reverse voltages, suitable for radiation imaging applications.
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| 11. |
- Badel, Xavier, 1977-
(författare)
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Electrochemically etched pore arrays in silicon for X-ray imaging detectors
- 2005
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Doktorsavhandling (övrigt vetenskapligt/konstnärligt)abstract
- Digital devices have now been introduced in many X-ray imaging applications, replacing slowly traditional photographic films. These devices are preferred as they offer real time imaging, easy handling and fast treatment of the images. However, the performance of the detectors still have to be improved in order to increase the image quality, and possibly reduce the X-ray dose, a vital parameter for medical use. In this thesis, three different new detector concepts have been investigated. All designs use pore arrays, which are ideal starting structures to form pixellated detectors. Electrochemical etching of n-type silicon in aqueous hydrofluoric acid solution (HF) has been studied to form these pore arrays. A broad range of pores have been fabricated with diameters varying from 200 nm to 40 µm and with depths reaching almost the wafer thickness, thus leading to very high aspect ratios. The technique was also found to be suitable for the formation of other types of structures such as pillars and tubes on the sub micrometer scale. The etching is based on the dissolution of silicon in HF under anodic bias and a supply of positive electrical carriers (holes). As holes are the minority carriers in n-type silicon, they are usually photo-generated. In this work an alternative technique, based on hole injection from a forward-biased pn junction, has been successfully pioneered. The first X-ray imaging detector concept presented in the thesis consists of a silicon charge coupled device (CCD) in proximity with a scintillating screen. The screen is made from a pore array having reflective pore walls and filled with CsI(Tl), emitting photons at a wavelength of 550 nm under X-ray exposure. The secondary emitted photons are light-guided by the pore walls and then detected by the CCD pixels. Detectors were fully fabricated and characterized. This concept provides good spatial resolution with negligible cross talk between adjacent pixels. The dependences of the detector efficiency on pore depth and on the coating of the pore walls are presented. Although most of the produced detectors had a detective quantum efficiency of about 25%, some detectors indicate that efficient scintillating screens can be achieved approaching the theoretical limit as set by poissonian statistics of the X-ray photons. The two other detector designs require the formation of vertical pn junctions, i.e. in the pore walls. In one concept the secondary emitted photons are detected by photodiodes located in the pore walls. This would lead to high charge collection efficiency as the photons do not have to be guided to one end of the pore. However, high noise due to the direct detection of X-rays in the diodes is expected. The other concept is based on generation of electron-hole pairs in a semiconductor and the ‘3D’ detector, where an array of vertical electrodes is used to separate the charges via an electric field. To uniformly dope the inside of deep pores, both boron diffusion and low-pressure chemical vapor diffusion of boron-doped poly-silicon were shown to be successful techniques. This was confirmed by SIMS profiles taken through the pore wall thickness. Finally, the possibility to form individual junction in each pore was shown. The diodes were electrically characterized, demonstrating good rectifying behavior and sensitivity to light.
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| 12. |
- Badel, Xavier, et al.
(författare)
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Performance of scintillating waveguides for CCD-based X-ray detectors
- 2006
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Ingår i: IEEE Transactions on Nuclear Science. - 0018-9499 .- 1558-1578. ; 53:1, s. 3-8
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Tidskriftsartikel (refereegranskat)abstract
- Scintillating films are usually used to improve the sensitivity of CCD-based X-ray imaging detectors. For an optimal spatial resolution and detection efficiency, a tradeoff has to be made on the film thickness. However, these scintillating layers can also be structured to provide a pixellated screen. In this paper, the study of CsI(TI)-filled pore arrays is reported. The pores are first etched in silicon, then oxidized and finally filled with CsI(TI) to form scintillating waveguides. The dependence of the detector sensitivity on pore depth, varied from 40 to 400 mu m here, follows rather well theoretical predictions. Most of the detectors produced in this work have a detective quantum efficiency of the incoming X-ray photons of about 25%. However, one detector shows that higher efficiency can be achieved approaching almost the theoretical limit set by Poisson statistics of the incoming X-rays. Thus, we conclude that it is possible to fabricate scintillating waveguides with almost ideal performance. Imaging capabilities of the detectors are demonstrated.
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| 13. |
- Elfström, Niklas, et al.
(författare)
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Avalanche breakdown in surface modified silicon nanowires
- 2007
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 91:10, s. 103502-1-103502-3
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Tidskriftsartikel (refereegranskat)abstract
- The electrical conductance of semiconductor nanowires can be changed by charges present on the nanowire surface. At high surface charge density, however, the nanowire channel may be quenched leading to a large shift in the I-DS-V-DS characteristics. In this letter, the authors demonstrate that this shift in V-DS is related to an avalanche effect in the nanowire. Silicon nanowires were fabricated in a top-down approach and the nanowire surface charge density was modified through buffer solutions of different pH values. Computer simulations using representative surface charge and interface charge densities clearly reproduce the data and unambiguously demonstrate the avalanche effect.
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| 14. |
- Elfström, Niklas, et al.
(författare)
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Biomolecule detection using a silicon nanoribbon : Accumulation mode versus inversion mode
- 2008
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Ingår i: Nanotechnology. - : IOP Publishing. - 0957-4484 .- 1361-6528. ; 19:23, s. 235201-
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Tidskriftsartikel (refereegranskat)abstract
- Silicon nanoribbons were fabricated using standard optical lithography from silicon on insulator material with top silicon layer thicknesses of 100, 60 and 45 nm. Electrically these work as Schottky-barrier field-effect transistors and, depending on the substrate voltage, electron or hole injection is possible. The current through the nanoribbon is extremely sensitive to charge changes at the oxidized top surface and can be used for biomolecule detection in a liquid. We show that for detection of streptavidin molecules the response is larger in the accumulation mode than in the inversion mode, although not leading to higher detection sensitivity due to increased noise. The effect is attributed to the location in depth of the conducting channel, which for holes is closer to the screened surface charges of the biomolecules. Furthermore, the response increases for decreasing silicon thickness in both the accumulation mode and the inversion mode. The results are verified qualitatively and quantitatively through a two-dimensional simulation model on a cross section along the nanoribbon device.
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| 15. |
- Elfström, Niklas, et al.
(författare)
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Sensitivity of silicon nanowires in biosensor applications
- 2008
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Ingår i: Journal of Physics, Conference Series. - : IOP Publishing. - 1742-6588 .- 1742-6596. ; 100:PART 5
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Tidskriftsartikel (refereegranskat)abstract
- A 2-dimensional simulation tool was designed to investigate the threshold voltage behaviour for a silicon nanowire constructed in a top down approach on silicon on insulator (SOI) material. The simulation shows, assuming a positive charge of +1.10(11) cm(-2) between the silicon/silicon dioxide interface and negatively charged surface states on top of the nanowire that the threshold voltage increases with decreasing height of the nanowire.
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| 16. |
- Elfström, Niklas, et al.
(författare)
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Silicon Nanoribbons for Electrical Detection of Biomolecules
- 2008
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Ingår i: Nano letters (Print). - : American Chemical Society (ACS). - 1530-6984 .- 1530-6992. ; 8:3, s. 945-949
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Tidskriftsartikel (refereegranskat)abstract
- Direct electrical detection of biomolecules at high sensitivity hat recently been demonstrated using semiconductor nanowires. Here we demonstrate that semiconductor nanoribbons, in this case, a thin sheet of silicon on an oxidized silicon substrate, can approach the same sensitivity extending below the picomolar concentration regime in the biotin/streptavidin case. This corresponds to less than similar to 20 analyte molecules bound to receptors on the nanoribbon surface. The micrometer-size lateral dimensions of the nanoribbon enable optical lithography to be used, resulting in a simple and high-yield fabrication process. Electrical characterization of the nanoribbons is complemented by computer simulations showing enhanced sensitivity for thin ribbons. Finally, we demonstrate that the device can be operated both in inversion as well as in accumulation mode and the measured differences in detection sensitivity are explained in terms of the distance between the channel and the receptor coated surface with respect to the Debye screening length. The nanoribbon approach opens up for large scale CMOS fabrication of highly sensitive biomolecule sensor chips for potential use in medicine and biotechnology.
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| 17. |
- Elfström, Niklas, 1979-
(författare)
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Silicon Nanowires for Biomolecule Detection
- 2008
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Doktorsavhandling (övrigt vetenskapligt/konstnärligt)abstract
- Starting from silicon on insulator (SOI) material, with a top silicon layer thickness of 100 nm, silicon nanowires were fabricated in a top down approach using electron beam (e-beam) lithography and subsequent eactive ion etching (RIE) and oxidation. Nanowires as narrow as 30 nm could be achieved. Further size reduction was done using electrochemical etching and/or oxidation. The nanowires were contacted creating drain, source and back gate contacts and characterized showing similar behavior as Schottky Barrier Metal Oxide Semiconductor Field Effect Transistors (SB-MOSFETs). As an alternative, by thinning the top silicon layer down nanoribbons, ~ 1 μm wide, with a thickness down to 45 nm could be produced using standard optical lithography showing similar behavior as the nanowires. The conduction mechanism for these devices is through electrons in an inversion current layer for positive back gate voltages and through holes in accumulation mode for negative back gate voltages. When the threshold voltage is extrapolated for the nanowires and the nanoribbons it scales with inverse width and thickness respectively, attributed to charged surface and/or interface states affecting more narrow/thinner devices essentially due to increased surface to volume ratio. Nanowires were functionalized with 3-aminopropyl triethoxysilane (APTES) molecules creating amino groups on the surface reactive to pH buffer solutions. By exposing the nanowires to buffer solutions of different pH value the conduction mechanism changed due to the surface becoming more or less negative. Threshold voltage shifts from pH = 3 to pH = 9 were seen to scale with inverse width again attributed to the larger surface to volume ratio for more narrow devices. Simulations confirm this behavior and further show that a charge change of a few elementary charges on the nanowire surface can alter the conductance significantly. Upon addition of the buffer solutions the channel is seen to be quenched for small drain bias attributed to negative surface charges screening the electron current. However, as the drain bias is increased the channel is restored. Computer simulations confirmed this behavior and further showed that the restoration of the channel was due to an avalanche process. A biomolecule detection experiment was set up using the specific binding of biotin to streptavidin. By functionalizing the nanoribbon with biotin molecules the current can be logged and as streptavidin molecules are added the current decreases (increases) if the nanoribbon is run in inversion (accumulation) mode due to the negative charge of the streptavidin molecule, delivered upon binding to biotin. A sensitivity significantly below the picomolar range was observed, corresponding to less than 20 streptavidin molecules attaching to the nanoribbon surface, assuming a homogeneous binding to the biotinylated surface. By decreasing the nanoribbon thickness the response was increased, a behavior attributed to the larger surface to volume ratio of these devices. The response was seen to be larger in the accumulation mode whereas close to the lower oxide in inversion mode. Computer simulations showed that this was due to the hole current running closer to the functionalized surface in accumulation mode and opposite in inversion mode. This was further investigated for different nanoribbon thicknesses and the response was shown to increase with inverse nanoribbon thickness again attributed to the larger surface to volume ratio. The nanoribbon has the advantage of simpler fabrication using standard optical lithography in comparison with e-beam lithography and it may provide a useful scheme for a practical biomolecule sensor.
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| 18. |
- Elfström, Niklas, et al.
(författare)
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Surface Charge Sensitivity of Silicon Nanowires : Size Dependence
- 2007
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Ingår i: Nano letters (Print). - : American Chemical Society (ACS). - 1530-6984 .- 1530-6992. ; 7:9, s. 2608-2612
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Tidskriftsartikel (refereegranskat)abstract
- Silicon nanowires of different widths were fabricated in silicon on insulator (SOI) material using conventional process technology combined with electron-beam lithography. The aim was to analyze the size dependence of the sensitivity of such nanowires for biomolecule detection and for other sensor applications. Results from electrical characterization of the nanowires show a threshold voltage increasing with decreasing width. When immersed in an acidic buffer solution, smaller nanowires exhibit large conductance changes while larger wires remain unaffected. This behavior is also reflected in detected threshold shifts between buffer solutions of different pH, and we find that nanowires of width > 150 nm are virtually insensitive to the buffer pH. The increased sensitivity for smaller sizes is ascribed to the larger surface/volume ratio for smaller wires exposing the channel to a more effective control by the local environment, similar to a surrounded gate transistor structure. Computer simulations confirm this behavior and show that sensing can be extended even down to the single charge level.
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| 19. |
- Galeckas, A., et al.
(författare)
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Combined photoluminescence-imaging and deep-level transient spectroscopy of recombination processes at stacking faults in 4H-SiC
- 2006
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Ingår i: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 74:23
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Tidskriftsartikel (refereegranskat)abstract
- We report on electronic properties of single- and double-layer stacking faults in 4H-SiC and provide an insight into apparent distinctions of recombination-enhanced defect reactions at these faults. Photoluminescence imaging spectroscopy and deep-level transient spectroscopy experiments reveal key constituents of radiative recombination and also provide firm evidence of nonradiative centers at E-V+0.38 eV responsible for recombination-enhanced mobility of silicon-core partial dislocations. A comprehensive energy level model is proposed allowing for a qualitative description of recombination activity at different types of stacking faults and the corresponding bounding partial dislocations.
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| 20. |
- Galeckas, Augustinas, et al.
(författare)
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Investigation of stacking fault formation in hydrogen bombarded 4H-SiC
- 2005
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Ingår i: SILICON CARBIDE AND RELATED MATERIALS 2004. - 0878499636 ; , s. 327-330
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Konferensbidrag (refereegranskat)abstract
- The effects of hydrogen and proton irradiation on stacking fault formation in 4H-SiC are investigated by an optical pump-probe method of imaging spectroscopy. We report optically stimulated nucleation and expansion of stacking faults (SFs) in 0.6 keV H-2(+) implanted n-/n+ and p+/n-/n+ structures. The activation enthalpy for recombination enhanced dislocation glide (REDG) in hydrogenated samples (∼ 0.25 eV) is found to be similar to that in a virgin material. Our results indicate that SFs mainly nucleate at the internal n-/n+ interface, beyond reach of hydrogen, thus justifying minor SF passivation effect. No REDG could be initiated optically in 2.5 MeV proton irradiated samples due to radiation defects providing alternative recombination channels to bypass the REDG mechanism. The radiation damage was verified by DLTS, revealing several new levels below E-C in the range 0.4-0.80 eV, and by PL, showing the onset of D-center related luminescence band and concurrent increase of the nonradiative recombination rate.
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| 21. |
- Galeckas, Augustinas, et al.
(författare)
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Investigation of structural stability in 4H-SiC structures with heavy ion implanted interface
- 2006
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Ingår i: Silicon Carbide and Related Materials 2005, Pts 1 and 2. - 9780878494255 ; , s. 395-398
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Konferensbidrag (refereegranskat)abstract
- We investigate the possibility of controlling formation of stacking faults (SFs) at the interface region by implanting the 4H-SiC substrate with low-energy antimony ions (75 keV Sb+) prior to conventional CVD growth of the homoepitaxial layers. This approach is based on the solidsolution hardening concept, according to which interaction of impurity atoms with dislocations makes the motion of the latter more difficult. Photoluminescence imaging spectroscopy is employed to investigate incorporation of Sb+ implants at the buried interface and also to assess its impact on structural degradation. Spectral results are analyzed considering both the onset of n-type doping and irradiation damage. The latter factor was estimated separately from supplementary measurements of high-energy (2.5 MeV H+) proton-irradiated 4H-SiC epilayers. We compare results of optically stimulated SF formation in virgin and Sb implanted regions and provide a comprehensive picture of the defect evolution, including microscopic details of the imminent nucleation sites.
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| 22. |
- Galeckas, A., et al.
(författare)
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Recombination-induced stacking faults : Evidence for a general mechanism in hexagonal SiC
- 2006
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Ingår i: Physical Review Letters. - 0031-9007 .- 1079-7114. ; 96:2
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Tidskriftsartikel (refereegranskat)abstract
- We report on optically induced nucleation and expansion of stacking faults in hexagonal SiC structures. The activation energy for partial dislocation glide under optical excitation is found to reduce to 0.25 +/- 0.05 eV, which is about 2 eV lower than for pure thermal activation. From the measurements of thermal activation and below-gap excitation spectroscopy of dislocation glide, we conclude that the elementary process controlling expansion of stacking faults is kink pair nucleation aided by the phonon-kick mechanism. We propose that solitons on 30 degrees Si(g) partials with a silicon core act as deep 2.4 eV+E-V trap sites, readily providing electron-hole recombination energy to enhance the motion of dislocations. Our results suggest that this is a general mechanism of structural degradation in hexagonal SiC.
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| 23. |
- Grivickas, P., et al.
(författare)
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Fundamental band edge absorption in nominally undoped and doped 4H-SiC
- 2007
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Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 101:12
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Tidskriftsartikel (refereegranskat)abstract
- Fundamental band edge absorption is investigated in nominally undoped (n < 1014 cm(-3)) and heavily doped (n similar to 8 x 10(18) cm(-3)) 4H-SiC by a spectroscopy technique based on spatially and time-resolved free-carrier absorption. The spectra are extracted over a wide absorption range (0.02-500 cm(-1)) at temperatures from 75 to 450 K. The experimental results are supported by an indirect transition theory with a unique set of dominating momentum-conserving phonons, showing good correlation with earlier findings of differential absorption measurements at 2 K. Exciton binding energy of 30 +/- 10 meV is derived from fitting the data at 75 K. The detected polarization anisotropy of absorption with respect to c axis is shown to be consistent with the selection rules for the corresponding phonon branches. An analytical model related to constant degree of involved phonons describes well the obtained energy gap variation with temperature. Finally, doping induced band gap narrowing is characterized above the impurity-Mott transition and compared with theoretical calculations in the random phase approximation. The shape of the fundamental absorption edge at high carrier concentrations is discussed in terms of excitonic enhancement above the Mott transition, as recently detected in Si.
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| 24. |
- Grivickas, Vytautas, et al.
(författare)
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Strong photoacoustic oscillations in layered TlGaSe2 semiconductor
- 2007
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Ingår i: Physica status solidi. B, Basic research. - : Wiley. - 0370-1972 .- 1521-3951. ; 244:12, s. 4624-4628
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Tidskriftsartikel (refereegranskat)abstract
- Periodic deflections of infrared probe are observed in TlGaSe2 after lateral excitation with optical pulse. The effect is explained by generation of photoacoustic dilatational wave, which propagates within the crystal. Low pulse fluence (0.01 mJ/cm(2)) is needed to induce such wave when the layer plane is excited. Acoustic wave is generated within a mu m-distance near the excited face, much shorter then the light penetration depth, 1/alpha, where alpha is the absorption coefficient. In the temperature range 105-120 K, where ferroelectric-paraelectric phase transition occur in TlGaSe2, discontinuous changes of the longitudinal sound velocity have been detected.
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| 25. |
- Grivickas, V., et al.
(författare)
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Strong photoacoustic pulses generated in TlGaSe2 layered crystals
- 2008
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Ingår i: PROCEEDINGS OF THE 17TH INTERNATIONAL VACUUM CONGRESS/13TH INTERNATIONAL CONFERENCE ON SURFACE SCIENCE/INTERNATIONAL CONFERENCE ON NANOSCIENCE AND TECHNOLOGY. - : IOP Publishing.
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Konferensbidrag (refereegranskat)abstract
- Periodic deflections of infrared probe beam in TlGaSe2 crystal after its lateral excitation by laser pulse with photon energy near the band gap are observed. Such deflections arise from travelling of the acoustic pulse within sample which, in turn, is produced by optical pump pulse through photoacoustic effect. The photoacoustic pulse is generated within thin region near the crystal excited face, much shorter then the light penetration depth. In the case of volume excitation photoacoustic pulse is also generated in the region near back face as well. Tentative explanation of the generation mechanism is discussed.
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