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| 2. |
- Bulow, K, et al.
(författare)
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The penetration depth and lateral distribution of pigment related to the pigment grain size and the calendering of paper
- 2002
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Ingår i: Nuclear Instruments & Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms. - 0168-583X. ; 189, s. 308-314
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Tidskriftsartikel (refereegranskat)abstract
- The interaction of ink and newspaper has been investigated and the specific question of penetration of ink into the paper has been addressed with a nuclear microprobe using particle induced X-ray emission, The penetration depth of the newsprint is a critical factor in terms of increasing the quality of newsprint and minimising the amount of ink used. The objective of the experiment was to relate the penetration depth of pigment with the calendering of the paper, The dependence of the penetration depth on the pigment grain size was also Studied, To Study the penetration depth of pigment in paper, cyan ink with Cu as a tracer of the coloured pigment was used, For the study of the penetration depth dependence of pigment size. specially grounded Japanese ink with well-defined pigment grain size was used. This was compared to Swedish ink with pigment grains with normal size-distribution, The results show that the calendering of the paper considerably affects the penetration depth of ink. (C) 2002 Elsevier Science B.V. All rights reserved.
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| 3. |
- Domeij, Martin, et al.
(författare)
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Avalanche injection in high voltage Si PiN diodes
- 1997
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Ingår i: Physica scripta. T. - 0281-1847. ; T69, s. 134-137
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Tidskriftsartikel (refereegranskat)abstract
- An experimental technique using optical excitation by a YAG laser pulse for studying avalanche injection in power devices is demonstrated This technique enables the creation of high uniform excess carrier concentrations in an optically defined device volume, involving very little heating. A method for determining the onset of avalanche multiplication, by studying the time integral of the reverse recovery current, is proposed. A PiN diode is observed to turn off from avalanching at a dissipated power density of more than 200 kW/cm(2).
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| 4. |
- Georgoudaki, Anna-Maria, et al.
(författare)
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Reprogramming Tumor-Associated Macrophages by Antibody Targeting Inhibits Cancer Progression and Metastasis
- 2016
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Ingår i: Cell Reports. - : Elsevier BV. - 2211-1247. ; 15:9, s. 2000-2011
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Tidskriftsartikel (refereegranskat)abstract
- Tumors are composed of multiple cell types besides the tumor cells themselves, including innate immune cells such as macrophages. Tumor-associated macrophages (TAMs) are a heterogeneous population of myeloid cells present in the tumor microenvironment (TME). Here, they contribute to immunosuppression, enabling the establishment and persistence of solid tumors as well as metastatic dissemination. We have found that the pattern recognition scavenger receptor MARCO defines a subtype of suppressive TAMs and is linked to clinical outcome. An anti-MARCO monoclonal antibody was developed, which induces anti-tumor activity in breast and colon carcinoma, as well as in melanoma models through reprogramming-TAM-populations to a pro-inflammatory phenotype and increasing tumor immunogenicity. This anti-tumor activity is dependent on the inhibitory Fc-receptor, Fc gamma RIIB, and also enhances the efficacy of checkpoint therapy. These results demonstrate that immunotherapies using antibodies designed to modify myeloid cells of the TME represent a promising mode of cancer treatment.
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| 5. |
- Li, Jiantong, et al.
(författare)
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Precise percolation thresholds of two-dimensional random systems comprising overlapping ellipses
- 2016
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Ingår i: Physica A. - : Elsevier. - 0378-4371 .- 1873-2119. ; 462, s. 940-950
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Tidskriftsartikel (refereegranskat)abstract
- This work explores the percolation thresholds of continuum systems consisting of randomly-oriented overlapping ellipses. High-precision percolation thresholds for various homogeneous ellipse systems with different aspect ratios are obtained from extensive Monte Carlo simulations based on the incorporation of Vieillard-Baron's contact function of two identical ellipses with our efficient algorithm for continuum percolation. In addition, we generalize Vieillard-Baron's contact function from identical ellipses to unequal ellipses, and extend the Monte Carlo algorithm to heterogeneous ellipse systems where the ellipses have different dimensions and/or aspect ratios. Based on the concept of modified excluded area, a general law is verified for precise prediction of percolation threshold for many heterogeneous ellipse systems. In particular, the study of heterogeneous ellipse systems gains insight into the apparent percolation threshold symmetry observed earlier in systems comprising unequal circles (Consiglio et al., 2004).
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| 6. |
- Lobov, Gleb S., et al.
(författare)
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Size Impact of Ordered P3HT Nanofibers on Optical Anisotropy
- 2016
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Ingår i: Macromolecular Chemistry and Physics. - : John Wiley & Sons. - 1022-1352 .- 1521-3935. ; 217:9, s. 1089-1095
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Tidskriftsartikel (refereegranskat)abstract
- Poly-3-hexylthiophene (P3HT) nanofibers are 1D crystalline structures with semiconductor properties. When P3HT nanofi bers are dispersed in nonconducting solvent, they react to external alternate electric field by aligning along the field lines. This can be used to create layers of ordered nanofi bers and is referred to as alternating current poling method. P3HT nanofi bers with three different size distributions are fabricated, using self-assembly mechanism in marginal solvents, and used for the alignment studies. Anisotropic absorption of oriented 2 mu m long nanofi bers exponentially increases with the magnitude of applied field to a certain asymptotic limit at 0.8 V mu m(-1), while 100-500 nm long nanofi bers respond to electric field negligibly. Effective optical birefringence of oriented 2 mu m long nanofi bers is calculated, based on the phase shift at 633 nm and the average layer thickness, to be 0.41. These results combined with further studies on real-time control over orientation of P3HT nanofi bers in liquid solution or host system are promising in terms of exploiting them in electroabsorptive and electrorefractive applications.
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| 7. |
- Smith, Anderson David, et al.
(författare)
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Graphene-based piezoresistive pressure sensing for uniaxial and biaxial strains
- 2014
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Ingår i: 2014 Silicon Nanoelectronics Workshop, SNW 2014. - : Institute of Electrical and Electronics Engineers (IEEE). - 9781479956777
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Konferensbidrag (refereegranskat)abstract
- The piezoresistive effect in graphene has been experimentally demonstrated for both uniaxial and biaxial strains. For uniaxial strain, rectangular membranes were measured while circular membranes provided biaxial strain. Gauge factors have also been extracted and compared to previous literature as well as simulations.
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| 8. |
- Wagner, Stefan, et al.
(författare)
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Noninvasive Scanning Raman Spectroscopy and Tomography for Graphene Membrane Characterization
- 2017
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Ingår i: Nano letters (Print). - : American Chemical Society (ACS). - 1530-6984 .- 1530-6992. ; 17:3, s. 1504-1511
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Tidskriftsartikel (refereegranskat)abstract
- Graphene has extraordinary mechanical and electronic properties, making it a promising material for membrane based nanoelectromechanical systems (NEMS). Here, chemical-vapor-deposited graphene is transferred onto target substrates to suspend it over cavities and trenches for pressure-sensor applications. The development of such devices requires suitable metrology methods, i.e., large-scale characterization techniques, to confirm and analyze successful graphene transfer with intact suspended graphene membranes. We propose fast and noninvasive Raman spectroscopy mapping to distinguish between freestanding and substrate-supported graphene, utilizing the different strain and doping levels. The technique is expanded to combine two-dimensional area scans with cross-sectional Raman spectroscopy, resulting in three-dimensional Raman tomography of membrane-based graphene NEMS. The potential of Raman tomography for in-line monitoring is further demonstrated with a methodology for automated data analysis to spatially resolve the material composition in micrometer-scale integrated devices, including free-standing and substrate-supported graphene. Raman tomography may be applied to devices composed of other two-dimensional materials as well as silicon micro- and nanoelectromechanical systems.
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