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Träfflista för sökning "WFRF:(Panchal V.) srt2:(2012)"

Sökning: WFRF:(Panchal V.) > (2012)

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1.
  • Panchal, V, et al. (författare)
  • Small epitaxial graphene devices for magnetosensing applications
  • 2012
  • Ingår i: Journal of Applied Physics. - : American Institute of Physics (AIP). - 0021-8979 .- 1089-7550. ; 111:7, s. 07E509-
  • Tidskriftsartikel (refereegranskat)abstract
    • Hall sensors with the width range from 0.5 to 20.0 mu m have been fabricated out of a monolayer graphene epitaxially grown on SiC. The sensors have been studied at room temperature using transport and noise spectrum measurements. The minimum detectable field of a typical 10-mu m graphene sensor is approximate to 2.5 mu T/root Hz, making them comparable with state of the art semiconductor devices of the same size and carrier concentration and superior to devices made of CVD graphene. Relatively high resistance significantly restricts performance of the smallest 500-nm devices. Carrier mobility is strongly size dependent, signifying importance of both intrinsic and extrinsic factors in the optimization of the device performance.
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2.
  • Panchal, V., et al. (författare)
  • Surface potential variations in epitaxial graphene devices investigated by Electrostatic Force Spectroscopy
  • 2012
  • Ingår i: Proceedings of the IEEE Conference on Nanotechnology. - : IEEE. - 1944-9399 .- 1944-9380. - 9781467321983
  • Konferensbidrag (refereegranskat)abstract
    • Electrostatic Force Spectroscopy and Scanning Kelvin Probe Microscopy techniques are used to study the performance of side-gated Hall devices made of epitaxial graphene on 4H-SiC(0001). Electrostatic Force Spectroscopy is a novel method which allows quantitative surface potential measurements with high spatial resolution. Using these techniques, we calibrate work function of the metal coated tip and define the work functions for single and double-layer graphene. We also show that the use of moderate strength electrical fields in the side-gate geometry does not notably change the performance of the device.
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