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- Meyer, B. K., et al.
(författare)
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Optically detected cyclotron resonance investigations on 4H and 6H SiC : Band-structure and transport properties
- 2000
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Ingår i: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 61:7, s. 4844-4849
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Tidskriftsartikel (refereegranskat)abstract
- We present experimental data on the band-structure and high-mobility transport properties of 6H and 4H-SiC epitaxial films based on optically detected cyclotron resonance investigations. From the orientational dependence of the electron effective mass in 6H-SiC we obtain direct evidence for the camels back nature of the conduction band between the M and L points. The broadening of the resonance signal in 4H-SiC as a function of temperature is used to extract information on electron mobilities and to conclude on the role of the different scattering mechanisms. Under high microwave powers an enhancement of the electron effective mass is found which is explained by a coupling of the electrons with longitudinal optical phonons. ⌐2000 The American Physical Society.
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| 3. |
- Nguyen, Son Tien, 1953-, et al.
(författare)
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Cyclotron resonance studies of effective masses and band structure in SiC
- 2004
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Ingår i: Silicon Carbide: Recent Major Advances. - Berlin, Heidelberg : Springer Verlag. - 9783540404583 - 3540404589 ; , s. -899
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Bokkapitel (övrigt vetenskapligt/konstnärligt)abstract
- Since the 1997 publication of Silicon Carbide - A Review of Fundamental Questions and Applications to Current Device Technology edited by Choyke, et al., there has been impressive progress in both the fundamental and developmental aspects of the SiC field. So there is a growing need to update the scientific community on the important events in research and development since then. The editors have again gathered an outstanding team of the world's leading SiC researchers and design engineers to write on the most recent developments in SiC. The book is divided into five main categories: theory, crystal growth, characterization, processing and devices. Every attempt has been made to make the articles as up-to-date as possible and assure the highest standards of accuracy. As was the case for earlier SiC books, many of the articles will be relevant a decade from now so that this book will take its place next to the earlier work as a permanent and essential reference volume.
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