1. |
- Svedin, Jan, et al.
(författare)
-
Development of a 210 GHz near-field measurement radar system based on an antenna-integrated MMIC receiver front-end and an ultra-compact HBV transmitter source module
- 2008
-
Ingår i: Proceedings of SPIE - The International Society for Optical Engineering. - : SPIE. - 0277-786X .- 1996-756X. - 9780819473493 ; 7117, s. Art. no. 71170H-
-
Konferensbidrag (refereegranskat)abstract
- The development of a 210 GHz radar system intended to study security applications such as personnel scanning is reported. The system is designed to operate with a transmit antenna floodlighting the target scene and a mechanically scanned antenna-integrated receiver module. For increased performance and potential future volume production the receiver front-end is based on highly integrated MMICs manufactured using the IAF 0.1 µm GaAs mHEMT process made available through a Swedish-German MoU. A single-chip MMIC solution is being developed containing feed antenna, LNA, mixer and an LO multiplier-chain. The transmitter part is based on a high-power HBV quintupler source-module.
|
|
2. |
- Banik, Biddut Kumar, 1978, et al.
(författare)
-
Development and Design of a 340 GHz Photomixer Source
- 2007
-
Ingår i: 18th International Symposium on Space THz Technology ISSTT 2007.
-
Konferensbidrag (refereegranskat)abstract
- We present the design of an InGaAlAs/InP uni-traveling-carrier photo-diode (UTC-PD) at mm-wave frequencies up to 340 GHz. The photo diode epitaxy is optimized using a quasi-3D software implementing the hydrodynamic semiconductor equations, for which an output power of 3 mW at 340 GHz was simulated. An equivalent circuit of the UTC-PD has been fitted to experimental S11 measurements up to 67 GHz. Finally, an optimized antenna coupled UTC-PD with choke filter has been designed. This MMIC circuit is intended for photomixing, with output power at 340 GHz.
|
|
3. |
- Banik, Biddut Kumar, 1978, et al.
(författare)
-
High Power Photonic MW/THz Generation Using UTC-PD
- 2008
-
Ingår i: GigaHertz SympoSium 2008. ; , s. 45-
-
Konferensbidrag (refereegranskat)abstract
- The ongoing research work concentrates on extending the previously accomplished UTC-PD fabrication and modelling techniques to 340 GHz and above. We have fabricated and characterized UTC-PDs intended for high power MW/THz generation. Several integrated antenna-detector circuits have been designed and characterised.
|
|
4. |
- Banik, Biddut Kumar, 1978, et al.
(författare)
-
UTC-PD Integration for Submillimetre-wave Generation
- 2008
-
Ingår i: 19th International Symposium on Space Terahertz Technology, ISSTT 2008; Groningen; Netherlands; 28 April 2008 through 30 April 2008. ; , s. P7-1, 135
-
Konferensbidrag (refereegranskat)abstract
- Because of the inherent difficulty to generate power in the frequency range 0.l-10 THz, the term 'THzgap' has been coined. Among a number of MW/THz generation techniques, the photomixer based sources hold high potential offering wide tunability and decent amounts of output power. The photomixing technique relies on the nonlinear mixing of two closely spaced laser wavelengths generating a beat oscillation at the difference frequency. In recent years, there has been an increasing interest in the Uni-Travelling-Carrier PhotoDiode (UTCPD) [1] for photomixing, photo receivers, MW/THz-wave generation, fibre-optic communication systems, and wireless communications. UTC-PDs have become very promising by demonstrating output powers of 20 mW at 100 GHz [1] and 25 μW at 0.9 THz [2].
|
|
5. |
|
|
6. |
|
|
7. |
- Vukusic, Josip, 1972, et al.
(författare)
-
Development of Uni-Travelling-Carrier Photodiodes
- 2006
-
Ingår i: 4th ESA Workshop on Millimetre Wave Technology and Applications.
-
Konferensbidrag (refereegranskat)abstract
- We have fabricated and characterized InGaAsP/InP uni-travelling-carrier photodiodes (UTC-PDs). An UTC-PD layer structure in the material system InGaAlAs/InP was also designed and grown with in-house molecular beam epitaxy (MBE). Using standard III-V processing involving lithography, metallization and etching, diodes of different sizes have been fabricated. Time domain and eye-diagram measurements have been performed. Limitations in the measurement system were identified and compensated for when measuring the bandwidth. The resulting bandwidth is in agreement with the area dependent RC-limitation which was estimated using quasi-DC capacitance-voltage (C-V) measurements.
|
|
8. |
- Vukusic, Josip, 1972, et al.
(författare)
-
Fabrication and Characterization of InGaAlAs/InP based Uni-Traveling-Carrier Photodiodes
- 2006
-
Ingår i: The Joint 31st International Conference on Infrared and Millimeter Waves and 14th International Conference on Terahertz Electronics. - 1424404002 ; , s. 138-
-
Konferensbidrag (refereegranskat)abstract
- We have fabricated and characterized InGaAlAs/InP uni-traveling-carrier photodiodes intended for photo-mixing and data-com applications. Bandwidths up to 60GHz were recorded with 8.5µm diameter devices for which a matched, integrated antenna-detector circuit has been designed.
|
|
9. |
-
Abstract Book of the 30th Workshop on Compound Semiconductor Devices and Integrated Circuits in Europe
- 2006
-
Samlingsverk (redaktörskap) (refereegranskat)abstract
- The organisers and hosts warmly welcome you to the 30th Workshop on Compound Semiconductor Devices and Integrated Circuits in Europe, WOCSDICE 2006, at the Gullmarsstrand Hotel & Conferences in Fiskebäckskil, Sweden, May 14-17, 2006. The symposium is organised by the Chalmers Department of Microtechnology and Nanoscience (MC2) with the aim to create a forum where researchers can discuss latest results and trends in the field of compound semiconductor technology and related science. Established in 1973, WOCSDICE has a long-standing tradition. This workshop brings together both internationally recognised researchers and promising young scientists and engineers to disseminate state-of-the-art research findings in the areas of compound semiconductor materials, associated devices and integrated circuits. This year we have 56 papers (8 invited) divided into nine sessions and more than 78 delegates from 20 countries.Fiskebäckskil is a small restful community situated by Gullmarsfjorden opposite to the village Lysekil. Gullmarsfjorden is Sweden's only true threshold fjord, 25 km deep and 1 to 3 km broad. In the 19th century the small fishing village was transformed into a shipping society. The special wood based architecture of this time is well preserved until today. During the 20th century Fiskebäckskil, surrounded by red granite and the salty sea became a prime choice for summer recreation and swimming. The conference hotel (Gullmarsstrand) building is reverentially renovated and modernised to fulfil the highest expectations for a successful workshop.The workshop is sponsored by the Swedish Research Council (VR), the IEEE Sweden Section, the Swedish Foundation for Strategic Research (SSF-HSEP), Swedish Governmental Agency for Innovation Systems (VINNOVA), OXFORD Plasma Technology and Agilent technologies. We would like to thank these organisations for their support. We would also like to thank everyone who helped to arrange WOCSDICE 2006: the international steering committee for advice; the local organising committee; Eva Hellberg and Peter Jönsson for all WEB support; Catharina Forssén, and Ingrid Collin for help with registrations and payments; the session chairs; and everyone who attends or contributes with a presentation.On behalf of the local organisation committee, we would like to welcome all of you and wish you a pleasant and fruitful stay in Fiskebäckskil.Welcome!Jan Stake and Jan GrahnWOCSDICE2006 Chairmen
|
|
10. |
- Banik, Biddut Kumar, 1978, et al.
(författare)
-
A novel catadioptric dielectric lens for microwave and terahertz applications
- 2008
-
Ingår i: Microwave and Optical Technology Letters. - : Wiley. - 1098-2760 .- 0895-2477. ; 50:2, s. 416-419
-
Tidskriftsartikel (refereegranskat)abstract
- A novel dielectric catadioptric lens, suitable for near-field sensing and imaging, is presented. The focusing property and the far-field pattern of the lens are investigated using a 3D full-wave electromagnetic solver. Furthermore, the proposed catadioptric lens has been designed and fabricated from Delrin. Simulations and measurements of the far-field at 5 GHz and return loss versus frequency using a Bow-tie slot feeding antenna are presented.
|
|
11. |
- Banik, Biddut Kumar, 1978, et al.
(författare)
-
Catadioptric Dielectric Lens for Imaging Applications
- 2008
-
Ingår i: Proceedings of 33rd International Conference on Infrared, Millimeter, and Terahertz Waves. - 9781424421190 ; , s. 1 - 2
-
Konferensbidrag (refereegranskat)abstract
- The design and characterization results of a novel catadioptric dielectric lens are presented. Although being electrically small, the lens provides a focus in the close vicinity which makes it suitable to be used in microwave and terahertz systems. Several lenses of different dielectric materials and dimensions have been fabricated. A simple backscattering measurement method has been implemented in order to determine the focusing property of the lens.
|
|
12. |
- Banik, Biddut Kumar, 1978, et al.
(författare)
-
Design of Antenna Integrated Photomixers and Catadioptric Lenses for Emerging THz Applications
- 2008
-
Ingår i: 2008 ANSYS Regional Conference.
-
Konferensbidrag (övrigt vetenskapligt/konstnärligt)abstract
- We will present design and modeling of antenna integrated photomixers for terahertz generation. In addition, the design and the quasioptical integration a novel catadioptric dielectric lens, suitable for imaging applications, will be presented. Although having a tremendous potential, the terahertz (0.1 – 10 THz) regime in the frequency spectrum and its applications are hindered due to the lack of viable and high power terahertz sources. This has led to the term “terahertz gap” being coined. We aim to construct compact sources utilizing the lens-coupled antenna-integrated photomixer sources based on Uni-Travelling-Carrier Photomixers (UTC-PD). These sources are one of the key components which could significantly bridge the terahertz gap.However, optimization of the epitaxial layer structure of the UTC-PD is necessary for high-power THz generation. The epilayers of the UTC-PD is designed and optimized in TCAD. Antennas are designed using HFSS while the impedance of the antenna at a specific bandwidth from HFSS is used to optimize the UTC-PD epilayers and vice versa. Thus proper impedance match and therefore high power THz generation is possible.A novel catadioptric dielectric lens is designed and characterized using HFSS. The lens provides an alternative solution to be used as a focusing element and therefore suitable for imaging or similar applications.In fine, we aim to combine the photomixer source and the lens in order to attain compact but powerful THz sources.
|
|
13. |
- Banik, Biddut Kumar, 1978, et al.
(författare)
-
Microwave S-parameter Characterization of an Antenna-Coupled Catadioptric Lens
- 2009
-
Ingår i: IEEE Antennas and Wireless Propagation Letters. - 1548-5757 .- 1536-1225. ; 8, s. 1299-1301
-
Tidskriftsartikel (refereegranskat)abstract
- The focusing property of a bow-tie antenna coupled catadioptric lens is studied experimentally using a vector measurement setup. The results show that the lens-antenna provides short-range focusing. Furthermore, the return loss of the lens-antenna was determined numerically and confirmed experimentally from 1 GHz to 10 GHz. The lens-antenna provides 60% bandwidth (VSWR ≤ 2) centered at 6 GHz. Finally, the lens-antenna was employed to detect and locate buried objects and results are presented.
|
|
14. |
- Banik, Biddut Kumar, 1978, et al.
(författare)
-
Millimeter Wave Characterization of a Catadioptric Lens for Imaging Applications
- 2009
-
Ingår i: IEEE Microwave and Wireless Components Letters. - 1558-1764 .- 1531-1309. ; 19:11, s. 680-682
-
Tidskriftsartikel (refereegranskat)abstract
- Characterization of a catadioptric dielectric lens-horn configuration for short-range sensing and imaging is presented. The focusing property is investigated both numerically and experimentally at 108 GHz. The lens-horn provides a focal spot of ~ 0.9λ at a distance of ~ 4.5λ. An imaging example employing the lens in a CW imaging setup is presented. A test pattern was imaged and a marked improvement in image resolution was observed. With the aid of the lens, features close to the wavelength are resolved, which are absent or indistinguishable otherwise.
|
|
15. |
- Banik, Biddut Kumar, 1978, et al.
(författare)
-
Optimization of the UTC-PD Epitaxy for Photomixing at 340 GHz
- 2008
-
Ingår i: International Journal of Infrared and Millimeter Waves. - : Springer Science and Business Media LLC. - 0195-9271 .- 1572-9559. ; 29:10, s. 914-923
-
Tidskriftsartikel (refereegranskat)abstract
- We present a method to optimize the epitaxial layer structure of an InGaAs/InP uni-traveling-carrier photo-diode (UTC-PD) for continuous THz-wave generation. The design approach used is general in that it can be applied for any target frequency while this study focuses on 340 GHz. The photodiode epitaxy is modeled and optimized using a TCAD software implementing the hydrodynamic semiconductor equations. This physical device model was found to be in good agreement with reported experimental results. It is shown that the UTC-PD can generate ~1 mW at 340 GHz by choosing the optimum absorption layer and collection layer thicknesses.
|
|
16. |
- Bryllert, Tomas, et al.
(författare)
-
11% efficiency 100 GHz InP-based heterostructure barrier varactor quintupler
- 2005
-
Ingår i: Electronics Letters. - : Institution of Engineering and Technology (IET). - 0013-5194 .- 1350-911X. ; 41:3, s. 131-132
-
Tidskriftsartikel (refereegranskat)abstract
- A record conversion efficiency of 11.4% at 100 GHz using a heterostructure barrier varactor (HBV) quintupler is demonstrated. The quintupler is based on a microstrip circuit mounted in a full-height crossed-waveguide block. The nonlinear element consists of a planar HBV diode fabricated in InGaAs=InAlAs=AlAs epitaxial layers on an InP substrate.
|
|
17. |
- Bryllert, Tomas, 1974, et al.
(författare)
-
A High-Power Frequency Tripler for 100 GHz
- 2006
-
Ingår i: The Joint 31st International Conference on Infrared and Millimeter Waves and 14th International Conference on Terahertz Electronics. - 1424404002 ; , s. 30-
-
Konferensbidrag (refereegranskat)abstract
- We present a Heterostructure Barrier Varactor (HBV) based tripler for power generation at ~100 GHz. The matching circuit for the HBV diode is implemented in microstrip on an AlN substrate with the diode flip-chip soldered. The microstrip circuit is mounted in a waveguide configuration. To simplify the fabrication and assembly no DC ground is used and the waveguides are full-height. 130 mW of output power at 114 GHz is achieved without the use of any tuners.
|
|
18. |
|
|
19. |
- Bryllert, Tomas, 1974, et al.
(författare)
-
High Power HBV Multipliers
- 2007
-
Ingår i: 18th International Symposium on Space THz Technology.
-
Konferensbidrag (refereegranskat)abstract
- We present a high-power frequency tripler for 100 GHz. The tripler - that is based on a single HBV diode - produces >200 mW of output power with a 3-dB bandwidth of 6%. This is the highest output power ever recorded for an HBV based multiplier irrespective of output frequency. The module features an ultra-compact waveguide block design and a microstrip matching circuit on high-thermal-conductivity AlN to improve the power handling capability.
|
|
20. |
- Emadi, Arezoo, 1977, et al.
(författare)
-
Design, Fabrication and characterisation of High Power HBV Diodes
- 2005
-
Ingår i: 16th International Symposium on Space Terahertz Technology; Chalmers Conference Centre, May 2-4, 2005, Gothenburg, Sweden, (Eds. Jan Stake, Harald Merkel.). ; , s. Session: P05-04
-
Konferensbidrag (refereegranskat)abstract
- We present design and analysis of material structures and device geometries for heterostructure barrier varactor diodes (HBVs) for high-power frequency multipliers. The methods aim at finding optimum epitaxial layer structures with respect to diode power handling capability and efficiency. A distributed device geometry for further increasing the output power levels whilst maintaining acceptable device temperatures is also presented. Finally, an electro-thermal HBV model with the ability of incorporating temperature-dependent device parameters is used to simulate the introduced devices, followed by a design example of a 3×4-barrier high-power HBV diode.
|
|
21. |
- Emadi, Arezoo, 1977, et al.
(författare)
-
Optimum Barrier Thickness Study for the Heterostructure Barrier Varactror Diode
- 2006
-
Ingår i: WOCSDICE 2006. - 1652-0769. ; , s. 55-57
-
Konferensbidrag (refereegranskat)abstract
- This experimental study aims at finding the optimum barrier thickness in heterostructure barrier varactor (HBV) diodes, to improve the diode efficiency especially for high-power frequency multiplier applications. The influence of barrier thickness on the conduction current is investigated for different biases and device temperatures. We found that for an InP-based HBV, there is an optimum barrier thickness range between 10 to 14 nm which causes the lowest possible leakage current.
|
|
22. |
- Emadi, Arezoo, 1977, et al.
(författare)
-
Optimum barrier thickness study for the InGaAs/InAlAs/AlAs heterostructure barrier varactor diodes
- 2007
-
Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 90:1, s. 012108-3
-
Tidskriftsartikel (refereegranskat)abstract
- This experimental study aims at finding the optimum barrier thickness in heterostructure barrier varactor (HBV) diodes to improve the diode efficiency especially for high-power frequency multiplier applications. The influence of barrier thickness on the destructive current leaking over and through the barrier is investigated for different biases and operating temperatures. The authors found that for an InP-based HBV, there is an optimum barrier thickness range between 10 to 14 nm which causes the lowest possible leakage current.
|
|
23. |
- Habibpour, Omid, 1979, et al.
(författare)
-
Characterisation of Exfoliated Graphene
- 2009
-
Ingår i: WOCSDICE 2009.
-
Konferensbidrag (refereegranskat)abstract
- High-frequency devices based on graphene is a promising field of research. In this paper we investigate two important parameters which based on theory are essential in order to have nonlinear responses in graphene. The first parameter is scattering time which should be as high as 1ps. Also the electrical field of the incident radiation should be higher a certain threshold in order to have nonlinear response. This threshold is generally quite high and increases with frequency and carrier density, so it is essential that graphene flake tolerate high electrical field. The first condition cannot be reached by graphene on SiO2/Si substrate according to ourinvestigation.
|
|
24. |
- Ingvarson, Mattias, 1974, et al.
(författare)
-
An electro-thermal HBV model
- 2005
-
Ingår i: IMS 2005. ; , s. 1151-1153
-
Konferensbidrag (refereegranskat)
|
|
25. |
-
International Symposium on Space Terahertz Technology
- 2006
-
Samlingsverk (redaktörskap) (refereegranskat)abstract
- The 16th International Symposium on Space Terahertz Technology was held at Chalmers, Göteborg, Sweden on May 2-4, 2005. This was the fi rst time the ISSTT meeting was held outside the US. More than 150 delegates from Europe, US and Asia attended and 147 scientifi c papers were presented. The meeting was organised by research groups at the microwave electronics laboratory, MC2, and GARD, Onsala space observatory. The programme was divided into 11 oral sessions with 63 papers (5 invited) and one poster session with 83 papers. Latest result on terahertz technologies for space applications were presented such as sensitive superconducting electronics (HEB/SIS), detectors, sources and systems. New applications of terahertz technology, e.g. for biotechnology, were also presented by Peter Siegel, Caltech (invited talk). Furthermore, we offered lab tours through MC2, conference dinner at Elfsborgs Fästning and fi nally a trip to Onsala space observatory. The symposium was sponsored by the Swedish Research Council (VR), IEEE Sweden Section, Swedish Space Corporation, Ericsson AB, COMSOL AB and our exhibitors: Omnisys Instruments AB, SAAB Ericsson Space AB, and European Southern Observatory (ESO). I would like to thank these organisations for their support. I would also like to thank everyone who helped to make the Symposium a success: international steering committee for advice and for reviewing abstracts; local organising committee; Eva Hellberg and Peter Jönsson for WEB support; Monica Hansen-Torvaldsson, Catharina Forssén, and Ingrid Collin for help with registrations and payments; Chalmers president Jan-Eric Sundgren and Erik Kollberg for opening the meeting; staff at Chalmers Conference Center; the session chairmen; and everyone who attended or contributed a presentation. Also an additional thanks to Mattias Ingvarson for putting this proceeding together.
|
|