| 1. |
- Armakavicius, Nerijus, 1989-, et al.
(författare)
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Electron effective mass in GaN revisited: New insights from terahertz and mid-infrared optical Hall effect
- 2024
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Ingår i: APL Materials. - : AIP Publishing. - 2166-532X. ; 12:2
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Tidskriftsartikel (refereegranskat)abstract
- Electron effective mass is a fundamental material parameter defining the free charge carrier transport properties, but it is very challenging to be experimentally determined at high temperatures relevant to device operation. In this work, we obtain the electron effective mass parameters in a Si-doped GaN bulk substrate and epitaxial layers from terahertz (THz) and mid-infrared (MIR) optical Hall effect (OHE) measurements in the temperature range of 38-340 K. The OHE data are analyzed using the well-accepted Drude model to account for the free charge carrier contributions. A strong temperature dependence of the electron effective mass parameter in both bulk and epitaxial GaN with values ranging from (0.18 +/- 0.02) m(0) to (0.34 +/- 0.01) m(0) at a low temperature (38 K) and room temperature, respectively, is obtained from the THz OHE analysis. The observed effective mass enhancement with temperature is evaluated and discussed in view of conduction band nonparabolicity, polaron effect, strain, and deviations from the classical Drude behavior. On the other hand, the electron effective mass parameter determined by MIR OHE is found to be temperature independent with a value of (0.200 +/- 0.002) m(0). A possible explanation for the different findings from THz OHE and MIR OHE is proposed. (c) 2024 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/)
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| 2. |
- Armakavicius, Nerijus, et al.
(författare)
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Resolving mobility anisotropy in quasi-free-standing epitaxial graphene by terahertz optical Hall effect
- 2021
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Ingår i: Carbon. - : Elsevier BV. - 0008-6223 .- 1873-3891. ; 172, s. 248-259
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Tidskriftsartikel (refereegranskat)abstract
- In this work, we demonstrate the application of terahertz-optical Hall effect (THz-OHE) to determine directionally dependent free charge carrier properties of ambient-doped monolayer and quasi-free-standing-bilayer epitaxial graphene on 4H–SiC(0001). Directionally independent free hole mobility parameters are found for the monolayer graphene. In contrast, anisotropic hole mobility parameters with a lower mobility in direction perpendicular to the SiC surface steps and higher along the steps in quasi-free-standing-bilayer graphene are determined for the first time. A combination of THz-OHE, nanoscale microscopy and optical spectroscopy techniques are used to investigate the origin of the anisotropy. Different defect densities and different number of graphene layers on the step edges and terraces are ruled out as possible causes. Scattering mechanisms related to doping variations at the step edges and terraces as a result of different interaction with the substrate and environment are discussed and also excluded. It is suggested that the step edges introduce intrinsic scattering in quasi-free-standing-bilayer graphene, that is manifested as a result of the higher ratio between mean free path and average terrace width parameters. The suggested scenario allows to reconcile existing differences in the literature regarding the anisotropic electrical transport in epitaxial graphene.
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| 3. |
- Bittrich, Eva, et al.
(författare)
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Morphology of Thin Films of Aromatic Ellagic Acid and Its Hydrogen Bonding Interactions
- 2020
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Ingår i: The Journal of Physical Chemistry C. - : AMER CHEMICAL SOC. - 1932-7447 .- 1932-7455. ; 124:30, s. 16381-16390
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Tidskriftsartikel (refereegranskat)abstract
- Ellagic acid (EA), an antioxidant from fruits or other plants, has recently evoked interest in the field of organic electronics because of its weak electron donor properties. In this work, the preparation of uniaxial pi-stacked EA films by thermal evaporation on different surfaces is reported for the first time. The (102) lattice plane of the pi-electron system was confirmed as the contact plane for one monolayer equivalent on Ag(111) by low-electron energy diffraction. X-ray and atomic force microscopy measurements revealed nanocrystalline grains with an average inplane size of 50 nm and considerably smaller average out-of-plane crystallite sizes (16-25 nm) in films of 16-75 nm thickness. The influence of different substrates was minor compared to the effect of the film thickness. An increase in the in-plane density of grains at larger film thicknesses was deduced from the trend in their uniaxial optical properties. Weak and strong intermolecular H-bonding interactions were identified in the EA crystal lattice, while a surplus of weak H-bonding was observed for the nanocrystallites in thin films, as compared to bulk EA. Finally, EA was coevaporated with the semiconducting thiophene molecule DCV4T-Et-2 to demonstrate principle interactions with a guest molecule by H-bonding analysis. Our results illustrate the feasibility of applying EA films as alignment layers for templating other semiconducting organic films used in organic electronic devices.
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| 4. |
- Chen, Shangzhi, et al.
(författare)
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Conductive polymer nanoantennas for dynamic organic plasmonics
- 2020
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Ingår i: Nature Nanotechnology. - London : Nature Publishing Group. - 1748-3387 .- 1748-3395. ; 15
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Tidskriftsartikel (refereegranskat)abstract
- Being able to dynamically shape light at the nanoscale is oneof the ultimate goals in nano-optics1. Resonant light–matterinteraction can be achieved using conventional plasmonicsbased on metal nanostructures, but their tunability is highlylimited due to a fixed permittivity2. Materials with switchablestates and methods for dynamic control of light–matterinteraction at the nanoscale are therefore desired. Here weshow that nanodisks of a conductive polymer can supportlocalized surface plasmon resonances in the near-infraredand function as dynamic nano-optical antennas, with their resonancebehaviour tunable by chemical redox reactions. Theseplasmons originate from the mobile polaronic charge carriersof a poly(3,4-ethylenedioxythiophene:sulfate) (PEDOT:Sulf)polymer network. We demonstrate complete and reversibleswitching of the optical response of the nanoantennasby chemical tuning of their redox state, which modulatesthe material permittivity between plasmonic and dielectricregimes via non-volatile changes in the mobile chargecarrier density. Further research may study different conductivepolymers and nanostructures and explore their usein various applications, such as dynamic meta-optics andreflective displays.
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| 5. |
- Chen, Shangzhi, et al.
(författare)
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Tunable Structural Color Images by UV-Patterned Conducting Polymer Nanofilms on Metal Surfaces.
- 2021
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Ingår i: Advanced Materials. - : Wiley. - 0935-9648 .- 1521-4095. ; 33:33
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Tidskriftsartikel (refereegranskat)abstract
- Precise manipulation of light-matter interactions has enabled a wide variety of approaches to create bright and vivid structural colors. Techniques utilizing photonic crystals, Fabry-Pérot cavities, plasmonics, or high-refractive-index dielectric metasurfaces have been studied for applications ranging from optical coatings to reflective displays. However, complicated fabrication procedures for sub-wavelength nanostructures, limited active areas, and inherent absence of tunability of these approaches impede their further development toward flexible, large-scale, and switchable devices compatible with facile and cost-effective production. Here, a novel method is presented to generate structural color images based on monochromic conducting polymer films prepared on metallic surfaces via vapor phase polymerization and ultraviolet (UV) light patterning. Varying the UV dose enables synergistic control of both nanoscale film thickness and polymer permittivity, which generates controllable structural colors from violet to red. Together with grayscale photomasks this enables facile fabrication of high-resolution structural color images. Dynamic tuning of colored surfaces and images via electrochemical modulation of the polymer redox state is further demonstrated. The simple structure, facile fabrication, wide color gamut, and dynamic color tuning make this concept competitive for applications like multifunctional displays.
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| 6. |
- Kakanakova-Georgieva, Anelia, 1970-, et al.
(författare)
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Incorporation of Magnesium into GaN Regulated by Intentionally Large Amounts of Hydrogen during Growth by MOCVD
- 2022
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Ingår i: Physica Status Solidi (B) Basic Research. - : Wiley. - 0370-1972 .- 1521-3951. ; 259:10
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Tidskriftsartikel (refereegranskat)abstract
- Herein, metal–organic chemical vapor deposition (MOCVD) of GaN layers doped with Mg atoms to the recognized optimum level of [Mg] ≈2 × 1019 cm−3 is performed. In a sequence of MOCVD runs, operational conditions, including temperature and flow rate of precursors, are maintained except for intentionally larger flows of hydrogen carrier gas fed into the reactor. By employing the largest hydrogen flow of 25 slm in this study, the performance of the as-grown Mg-doped GaN layers is certified by a room-temperature hole concentration of p ≈2 × 1017 cm−3 in the absence of any thermal activation treatment. Experimental evidence is delivered that the large amounts of hydrogen during the MOCVD growth can regulate the incorporation of the Mg atoms into GaN in a significant way so that MgH complex can coexist with a dominant and evidently electrically active isolated MgGa acceptor.
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| 7. |
- Karki, Akchheta, et al.
(författare)
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Doped semiconducting polymer nanoantennas for tunable organic plasmonics
- 2022
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Ingår i: Communications Materials. - : Springer Nature. - 2662-4443. ; 3:1
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Tidskriftsartikel (refereegranskat)abstract
- Optical nanoantennas based on organic plasmonics are promising for their higher degree of tunability over metallic nanostructures. Here, nanodisks of polythiophene-based semiconducting polymers provide nanooptical antennas with resonances that are tunable over a 1000 nm wavelength range and can be switched off or on by doping modulation. Optical nanoantennas are often based on plasmonic resonances in metal nanostructures, but their dynamic tunability is limited due to the fixed permittivity of conventional metals. Recently, we introduced PEDOT-based conducting polymers as an alternative materials platform for dynamic plasmonics and metasurfaces. Here, we expand dynamic organic plasmonic systems to a wider class of doped polythiophene-based semiconducting polymers. We present nanodisks of PBTTT semiconducting polymer doped with a dicationic salt, enabling a high doping level of around 0.8 charges per monomer, and demonstrate that they can be used as nanooptical antennas via redox-tunable plasmonic resonances. The resonances arise from the polymer being optically metallic in its doped state and dielectric in its non-conducting undoped state. The plasmonic resonances are controllable over a 1000 nm wavelength range by changing the dimensions of the nanodisks. Furthermore, the optical response of the nanoantennas can be reversibly tuned by modulating the doping level of the polymer. Simulations corroborate the experimental results and reveal the possibility to also modulate the optical nearfield response of the nanoantennas.
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| 8. |
- Karki, Akchheta, et al.
(författare)
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Electrical Tuning of Plasmonic Conducting Polymer Nanoantennas
- 2022
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Ingår i: Advanced Materials. - : Wiley. - 1521-4095 .- 0935-9648. ; 34:13
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Tidskriftsartikel (refereegranskat)abstract
- Nanostructures of conventional metals offer manipulation of light at the nanoscale but are largely limited to static behavior due to fixed material properties. To develop the next frontier of dynamic nano-optics and metasurfaces, this study utilizes the redox-tunable optical properties of conducting polymers, as recently shown to be capable of sustaining plasmons in their most conducting oxidized state. Electrically tunable conducting polymer nano-optical antennas are presented, using nanodisks of poly(3,4-ethylenedioxythiophene:sulfate) (PEDOT:Sulf) as a model system. In addition to repeated on/off switching of the polymeric nanoantennas, the concept enables gradual electrical tuning of the nano-optical response, which was found to be related to the modulation of both density and mobility of the mobile polaronic charge carriers in the polymer. The resonance position of the PEDOT:Sulf nanoantennas can be conveniently controlled by disk size, here reported down to a wavelength of around 1270 nm. The presented concept may be used for electrically tunable metasurfaces, with tunable farfield as well as nearfield. The work thereby opens for applications ranging from tunable flat meta-optics to adaptable smart windows.
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| 9. |
- Knight, Sean Robert, et al.
(författare)
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Room temperature two-dimensional electron gas scattering time, effective mass, and mobility parameters in AlxGa1−xN/GaN heterostructures (0.07 ≤ x ≤ 0.42)
- 2023
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Ingår i: Journal of Applied Physics. - : American Institute of Physics Inc.. - 0021-8979 .- 1089-7550. ; 134:18
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Tidskriftsartikel (refereegranskat)abstract
- Al xGa 1−xN/GaN high-electron-mobility transistor (HEMT) structures are key components in electronic devices operating at gigahertz or higher frequencies. In order to optimize such HEMT structures, understanding their electronic response at high frequencies and room temperature is required. Here, we present a study of the room temperature free charge carrier properties of the two-dimensional electron gas (2DEG) in HEMT structures with varying Al content in the Al xGa 1−xN barrier layers between x=0.07 and x=0.42. We discuss and compare 2DEG sheet density, mobility, effective mass, sheet resistance, and scattering times, which are determined by theoretical calculations, contactless Hall effect, capacitance-voltage, Eddy current, and cavity-enhanced terahertz optical Hall effect (THz-OHE) measurements using a low-field permanent magnet (0.6 T). From our THz-OHE results, we observe that the measured mobility reduction from x=0.13 to x=0.42 is driven by the decrease in 2DEG scattering time, and not the change in effective mass. For x<0.42, the 2DEG effective mass is found to be larger than for electrons in bulk GaN, which in turn, contributes to a decrease in the principally achievable mobility. From our theoretical calculations, we find that values close to 0.3 m0 can be explained by the combined effects of conduction band nonparabolicity, polarons, and hybridization of the electron wavefunction through penetration into the barrier layer.
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| 10. |
- Knight, Sean Robert, et al.
(författare)
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Terahertz permittivity parameters of monoclinic single crystal lutetium oxyorthosilicate
- 2024
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 124:3
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Tidskriftsartikel (refereegranskat)abstract
- The anisotropic permittivity parameters of monoclinic single crystal lutetium oxyorthosilicate, Lu2SiO5 (LSO), have been determined in the terahertz spectral range. Using terahertz generalized spectroscopic ellipsometry (THz-GSE), we obtained the THz permittivities along the a, b, and c? crystal directions, which correspond to the ea; eb, and ec? on-diagonal tensor elements. The associated off diagonal tensor element eac? was also determined experimentally, which is required to describe LSO's optical response in the monoclinic a-c crystallographic plane. From the four tensor elements obtained in the model fit, we calculate the direction of the principal dielectric axes in the a-c plane. We find good agreementwhen comparing THz-GSE permittivities to the static permittivity tensors from previous infrared and density functional theory studies.
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| 11. |
- Kuang, Chaoyang, et al.
(författare)
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Switchable Broadband Terahertz Absorbers Based on Conducting Polymer-Cellulose Aerogels
- 2023
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Ingår i: Advanced Science. - : WILEY. - 2198-3844.
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Tidskriftsartikel (refereegranskat)abstract
- Terahertz (THz) technologies provide opportunities ranging from calibration targets for satellites and telescopes to communication devices and biomedical imaging systems. A main component will be broadband THz absorbers with switchability. However, optically switchable materials in THz are scarce and their modulation is mostly available at narrow bandwidths. Realizing materials with large and broadband modulation in absorption or transmission forms a critical challenge. This study demonstrates that conducting polymer-cellulose aerogels can provide modulation of broadband THz light with large modulation range from ≈ 13% to 91% absolute transmission, while maintaining specular reflection loss < −30 dB. The exceptional THz modulation is associated with the anomalous optical conductivity peak of conducting polymers, which enhances the absorption in its oxidized state. The study also demonstrates the possibility to reduce the surface hydrophilicity by simple chemical modifications, and shows that broadband absorption of the aerogels at optical frequencies enables de-frosting by solar-induced heating. These low-cost, aqueous solution-processable, sustainable, and bio-friendly aerogels may find use in next-generation intelligent THz devices.
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| 12. |
- Kuhne, Philipp, et al.
(författare)
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Enhancement of 2DEG effective mass in AlN/Al0.78Ga0.22N high electron mobility transistor structure determined by THz optical Hall effect
- 2022
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 120:25
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Tidskriftsartikel (refereegranskat)abstract
- We report on the free charge carrier properties of a two-dimensional electron gas (2DEG) in an AlN/AlxGa1-xN high electron mobility transistor structure with a high aluminum content (x = 0.78). The 2DEG sheet density N s = ( 7.3 +/- 0.7 ) x 10 12 cm(-2), sheet mobility mu s = ( 270 +/- 40 ) cm(2)/(Vs), sheet resistance R- s = ( 3200 +/- 500 ) omega/ ?, and effective mass m( eff) = ( 0.63 +/- 0.04 ) m( 0) at low temperatures ( T = 5 K ) are determined by terahertz (THz) optical Hall effect measurements. The experimental 2DEG mobility in the channel is found within the expected range, and the sheet carrier density is in good agreement with self-consistent Poisson-Schrodinger calculations. However, a significant increase in the effective mass of 2DEG electrons at low temperatures is found in comparison with the respective value in bulk Al0.78Ga22N ( m( eff) = 0.334 m( 0)). Possible mechanisms for the enhanced 2DEG effective mass parameter are discussed and quantified using self-consistent Poisson-Schrodinger calculations .Published under an exclusive license by AIP Publishing.
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| 13. |
- Papamichail, Alexis, et al.
(författare)
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Mg-doping and free-hole properties of hot-wall MOCVD GaN
- 2022
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Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 131:18
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Tidskriftsartikel (refereegranskat)abstract
- The hot-wall metal-organic chemical vapor deposition (MOCVD), previously shown to enable superior III-nitride material quality and high performance devices, has been explored for Mg doping of GaN. We have investigated the Mg incorporation in a wide doping range (2.45 × 10 18 cm-3 up to 1.10 × 10 20 cm-3) and demonstrate GaN:Mg with low background impurity concentrations under optimized growth conditions. Dopant and impurity levels are discussed in view of Ga supersaturation, which provides a unified concept to explain the complexity of growth conditions impact on Mg acceptor incorporation and compensation. The results are analyzed in relation to the extended defects, revealed by scanning transmission electron microscopy, x-ray diffraction, and surface morphology, and in correlation with the electrical properties obtained by Hall effect and capacitance-voltage (C-V) measurements. This allows to establish a comprehensive picture of GaN:Mg growth by hot-wall MOCVD providing guidance for growth parameters optimization depending on the targeted application. We show that substantially lower H concentration as compared to Mg acceptors can be achieved in GaN:Mg without any in situ or post-growth annealing resulting in p-type conductivity in as-grown material. State-of-the-art p-GaN layers with a low resistivity and a high free-hole density (0.77 ω cm and 8.4 × 10 17 cm - 3, respectively) are obtained after post-growth annealing demonstrating the viability of hot-wall MOCVD for growth of power electronic device structures.
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| 14. |
- Pearson Johansson, Joel, et al.
(författare)
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Near-infrared Supernova Ia Distances : Host Galaxy Extinction and Mass-step Corrections Revisited
- 2021
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Ingår i: Astrophysical Journal. - : IOP Publishing Ltd. - 0004-637X .- 1538-4357. ; 923:2
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Tidskriftsartikel (refereegranskat)abstract
- We present optical and near-infrared (NIR, Y-, J-, H-band) observations of 42 Type Ia supernovae (SNe Ia) discovered by the untargeted intermediate Palomar Transient Factory survey. This new data set covers a broad range of redshifts and host galaxy stellar masses, compared to previous SN Ia efforts in the NIR. We construct a sample, using also literature data at optical and NIR wavelengths, to examine claimed correlations between the host stellar masses and the Hubble diagram residuals. The SN magnitudes are corrected for host galaxy extinction using either a global total-to-selective extinction ratio, R-V = 2.0, for all SNe, or a best-fit R-V for each SN individually. Unlike previous studies that were based on a narrower range in host stellar mass, we do not find evidence for a "mass step," between the color- and stretch-corrected peak J and H magnitudes for galaxies below and above log(M-*/M-circle dot) = 10. However, the mass step remains significant (3 sigma) at optical wavelengths (g, r, i) when using a global R-V, but vanishes when each SN is corrected using their individual best-fit R-V. Our study confirms the benefits of the NIR SN Ia distance estimates, as these are largely exempted from the empirical corrections dominating the systematic uncertainties in the optical.
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| 15. |
- Persson, Ingemar, et al.
(författare)
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Origin of layer decoupling in ordered multilayer graphene grown by high-temperature sublimation on C-face 4H-SiC
- 2020
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Ingår i: APL Materials. - : AMER INST PHYSICS. - 2166-532X. ; 8:1
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Tidskriftsartikel (refereegranskat)abstract
- We study the origin of layer decoupling in ordered multilayer graphene grown by high temperature sublimation on C-face 4H-SiC. The mid-infrared optical Hall effect technique is used to determine the magnetic field dependence of the inter-Landau level transition energies and their optical polarization selection rules, which unambiguously show that the multilayer graphene consists of electronically decoupled layers. Transmission electron microscopy reveals no out-of-plane rotational disorder between layers in the stack, which is in contrast to what is typically observed for C-face graphene grown by low temperature sublimation. It is found that the multilayer graphene maintains AB-stacking order with increased interlayer spacing by 2.4%-8.4% as compared to highly oriented pyrolytic graphite. Electron energy loss spectroscopy mapping reveals Si atoms trapped in between layers, which are proposed to be the cause for the observed increased interlayer spacing leading to layer decoupling. Based on our results, we propose a defect-driven growth evolution mechanism for multilayer graphene on C-face SiC via high temperature sublimation.
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| 16. |
- Persson, P. O.Å., et al.
(författare)
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Tuning composition in graded AlGaN channel HEMTs toward improved linearity for low-noise radio-frequency amplifiers
- 2023
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 122:15
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Tidskriftsartikel (refereegranskat)abstract
- Compositionally graded channel AlGaN/GaN high electron mobility transistors (HEMTs) offer a promising route to improve device linearity, which is necessary for low-noise radio-frequency amplifiers. In this work, we demonstrate different grading profiles of a 10-nm-thick AlxGa1-xN channel from x = 0 to x = 0.1 using hot-wall metal-organic chemical vapor deposition (MOCVD). The growth process is developed by optimizing the channel grading and the channel-to-barrier transition. For this purpose, the Al-profiles and the interface sharpness, as determined from scanning transmission electron microscopy combined with energy-dispersive x-ray spectroscopy, are correlated with specific MOCVD process parameters. The results are linked to the channel properties (electron density, electron mobility, and sheet resistance) obtained by contactless Hall and terahertz optical Hall effect measurements coupled with simulations from solving self-consistently Poisson and Schrödinger equations. The impact of incorporating a thin AlN interlayer between the graded channel and the barrier layer on the HEMT properties is investigated and discussed. The optimized graded channel HEMT structure is found to have similarly high electron density (∼9 × 10 12 cm-2) as the non-graded conventional structure, though the mobility drops from ∼ 2360 cm2/V s in the conventional to ∼ 960 cm2/V s in the graded structure. The transconductance gm of the linearly graded channel HEMTs is shown to be flatter with smaller g m ′ and g m ″ as compared to the conventional non-graded channel HEMT implying improved device linearity.
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| 17. |
- Schubert, Mathias, et al.
(författare)
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Terahertz electron paramagnetic resonance generalized spectroscopic ellipsometry: The magnetic response of the nitrogen defect in 4H-SiC
- 2022
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 120:10
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Tidskriftsartikel (refereegranskat)abstract
- We report on terahertz (THz) electron paramagnetic resonance generalized spectroscopic ellipsometry (THz-EPR-GSE). Measurements of field and frequency dependencies of magnetic response due to spin transitions associated with nitrogen defects in 4H-SiC are shown as an example. THz-EPR-GSE dispenses with the need of a cavity, permits independently scanning field and frequency parameters, and does not require field or frequency modulation. We investigate spin transitions of hexagonal (h) and cubic (k) coordinated nitrogen including coupling with its nuclear spin (I = 1), and we propose a model approach for the magnetic susceptibility to account for the spin transitions. From the THz-EPR-GSE measurements, we can fully determine polarization properties of the spin transitions, and we can obtain the k coordinated nitrogen g and hyperfine splitting parameters using magnetic field and frequency dependent Lorentzian oscillator line shape functions. Magnetic-field line broadening presently obscures access to h parameters. We show that measurements of THz-EPR-GSE at positive and negative fields differ fundamentally and hence provide additional information. We propose frequency-scanning THz-EPR-GSE as a versatile method to study properties of spins in solid state materials.
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| 18. |
- Stanishev, Vallery, et al.
(författare)
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Critical view on buffer layer formation and monolayer graphene properties in high-temperature sublimation
- 2021
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Ingår i: Applied Sciences (Switzerland). - : MDPI AG. - 2076-3417. ; 11:4, s. 1-16
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Tidskriftsartikel (refereegranskat)abstract
- In this work we have critically reviewed the processes in high-temperature sublimation growth of graphene in Ar atmosphere using closed graphite crucible. Special focus is put on buffer layer formation and free charge carrier properties of monolayer graphene and quasi-freestanding monolayer graphene on 4H–SiC. We show that by introducing Ar at higher temperatures, TAr, one can shift the formation of the buffer layer to higher temperatures for both n-type and semi-insulating substrates. A scenario explaining the observed suppressed formation of buffer layer at higher TAr is proposed and discussed. Increased TAr is also shown to reduce the sp3 hybridization content and defect densities in the buffer layer on n-type conductive substrates. Growth on semi-insulating substrates results in ordered buffer layer with significantly improved structural properties, for which TAr plays only a minor role. The free charge density and mobility parameters of monolayer graphene and quasi-freestanding monolayer graphene with different TAr and different environmental treatment conditions are determined by contactless terahertz optical Hall effect. An efficient annealing of donors on and near the SiC surface is suggested to take place for intrinsic monolayer graphene grown at 2000◦C, and which is found to be independent of TAr . Higher TAr leads to higher free charge carrier mobility parameters in both intrinsically n-type and ambient p-type doped monolayer graphene. TAr is also found to have a profound effect on the free hole parameters of quasi-freestanding monolayer graphene. These findings are discussed in view of interface and buffer layer properties in order to construct a comprehensive picture of high-temperature sublimation growth and provide guidance for growth parameters optimization depending on the targeted graphene application.
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| 19. |
- Stanishev, Vallery, et al.
(författare)
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Low Al-content n-type AlxGa1−xN layers with a high-electron-mobility grown by hot-wall metalorganic chemical vapor deposition
- 2023
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Ingår i: Vacuum. - : PERGAMON-ELSEVIER SCIENCE LTD. - 0042-207X .- 1879-2715. ; 217
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Tidskriftsartikel (refereegranskat)abstract
- In this work, we demonstrate the capability of the hot-wall metalorganic chemical vapor deposition to deliver high-quality n-AlxGa1−xN (x = 0 – 0.12, [Si] = 1×1017 cm−3) epitaxial layers on 4H-SiC(0001). All layers are crack-free, with a very small root mean square roughness (0.13 – 0.25 nm), homogeneous distribution of Al over film thickness and a very low unintentional incorporation of oxygen at the detection limit of 5×1015 cm−3 and carbon of 2×1016 cm−3. Edge type dislocations in the layers gradually increase with increasing Al content while screw dislocations only raise for x above 0.077. The room temperature electron mobility of the n-AlxGa1−xN remain in the range of 400 – 470 cm2/(V.s) for Al contents between 0.05 and 0.077 resulting in comparable or higher Baliga figure of merit with respect to GaN, and hence demonstrating their suitability for implementation as drift layers in power device applications. Further increase in Al content is found to result in significant deterioration of the electrical properties.
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