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- Sveinbjornsson, EO, et al.
(författare)
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High Field Effect Mobility in Si Face 4H-SiC MOSFET Made on Sublimation Grown Epitaxial Material
- 2005
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Ingår i: Materials Science Forum, Vols. 483-485. ; , s. 841-844
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Konferensbidrag (refereegranskat)abstract
- We report on fabrication and characterization of n-channel Si face 4H-SiC MOSFETs made using sublimation grown epitaxial material. Transistors made on this material exhibit record-high peak field effect mobility of 208 cm(2)/Vs while reference transistors made on a commercial epitaxial material grown by chemical vapor deposition (CVD) show field effect mobility of 125 cm(2)/VS. The mobility enhancement is attributed to better surface morphology of the sublimation grown epitaxial layer.
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