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| 2. |
- Beshkova, Milena, 1975-, et al.
(författare)
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Structural Properties of 3C-SiC Grown by Sublimation Epitaxy
- 2009
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Ingår i: ECSCRM2009,2009. - Materials Science Forum Vols. 615-617 : Trans Tech Publications. - 9780878493340 ; , s. 181-184
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Konferensbidrag (refereegranskat)abstract
- The present paper deals with morphological and structural investigation of 3C-SiC layers grown by sublimation epitaxy on on axis 6H-SiC(0001) at source temperature 2000 °C, under vacuum conditions (<10-5 mbar) and different temperature gradients in the range of 5-8 °C/mm. The layer grown at a temperature gradient 6 °C/mm has the largest average domain size of 0.4 mm2 assessed by optical microscope in transmission mode. The rocking curve full width at half maximum (FWHM) of (111) reflection is 43 arcsec which suggests good crystalline quality. The AFM image of the same layer shows steps with height 0.25 nm and 0.75 nm which are characteristic of a stacking fault free 3C-SiC surface and c-axis repeat height, respectively.
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| 3. |
- Beshkova, Milena, et al.
(författare)
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Sublimation epitaxy of AlN layers grown by different conditions on 4H-SiC substrates
- 2007
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Ingår i: Journal of Optoelectronics and Advanced Materials. - 1454-4164 .- 1841-7132. ; 9:1, s. 213-216
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Tidskriftsartikel (refereegranskat)abstract
- Epitaxial layers of aluminium nitride were grown at temperature 2100 degrees C on 10X10 mm(2) 4H-SiC substrates via a sublimation-recondensation method in an RF heated graphite furnace. The source material was polycrystalline sintered AIN. Growths of AIN layers in vacuum and pure nitrogen at 20 mbar were compared. MA maximum growth rate of 70 mu m/h was achieved in a pure N-2 atmosphere. The surface morphology reveals the hexagonal symmetry of the seeds, suggesting an epitaxial growth. This was confirmed by High-Resolution X-Ray Diffraction. The spectra showed a strong and well defined (0002) reflection positioned at 36.04 degrees in a symmetric theta-2 theta scan for both samples. Micro-Raman spectroscopy revealed that the films had a wurtzite structure. Rutherford Backscattering Spectrometry indicated the quality with a relative chi(min) parameter 0.68.
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| 4. |
- Vasiliauskas, Remigijus, 1982-, et al.
(författare)
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Two-dimensional nucleation of cubic and 6H silicon carbide
- 2009
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Ingår i: ECSCRM2008,2008. - Materials Science Forum Vols. 615-617 : Trans Tech Publications. - 9780878493340 ; , s. 189-192
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Konferensbidrag (refereegranskat)abstract
- The initial stage of heteroepitaxial growth of 3C-SiC and homoepitaxial growth of 6H-SiC on nominal 6H-SiC on-axis substrates has been studied. Before 3C-SiC starts to nucleate, 6H-SiC grows in a step-flow growth mode due to a slight off-orientation of the substrate surface already at about 1500oC. In the 1650-1700oC temperature interval 3C-SiC nucleates as 2D islands. A distance away from the 3C-SiC island 6H-SiC grows in step-flow mechanism. In the vicinity of the 3C-SiC islands the 6H-SiC growth steps start to change direction and even split into two steps with the equal height of 0.5 nm, which is approaching the unit cell size of cubic SiC. When the supersaturation is lower in comparison with the conditions for 3C-SiC growth, there is only formation of 6H-SiC, i.e. homoepitaxial growth. The growth mode of 6H-SiC is dependent on temperature. At the lowest temperature there is spiral growth while at higher temperature 2D nucleation is preferred.
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