| 1. |
- Du, Zaifa, et al.
(författare)
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Efficiency enhancement of micro-light-emitting diode with shrinking size by localized surface plasmons coupling
- 2024
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Ingår i: Applied Physics B: Lasers and Optics. - 0946-2171. ; 130:3
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Tidskriftsartikel (refereegranskat)abstract
- The external quantum efficiency (EQE) enhancement of different sized GaN micro-light-emitting diodes (μLEDs) by using localized surface plasmons (LSPs) have been studied. Silver nanoparticles (Ag NPs) are attached to the sidewalls of μLEDs by spin-coating so as to be effectively coupled with the multiple quantum well (MQW) of μLEDs and generate the LSPs. In the μLEDs with 20 × 20 μm2 large mesas, the LSPs can effectively inhibit the efficiency droop. Compared to the μLED samples without the LSPs coupling, the EQE has been enhanced by about 8% at a high current density of 20,000 A/cm2. This work confirms the effectiveness of the LSPs technology in improving the μLED performances, which is originally practiced only on the basal faces of conventional LEDs.
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| 2. |
- Fang, Xiubo, et al.
(författare)
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Numerical modeling of GaN growth by MOCVD on metal substrate
- 2024
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Ingår i: Digest of Technical Papers - SID International Symposium. - 2168-0159 .- 0097-966X. ; 55:S1, s. 1059-1063
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Konferensbidrag (refereegranskat)abstract
- GaN materials have attracted great interest and have demonstrated remarkable potential in many fields. When growing GaN materials, substrate selection is of great importance. By virtue of their nominally unlimited size, easy removal, and excellent thermal conduction, metal substrates have been suggested as an alternative to the commonly used substrates such as sapphire. GaN growth on metal substrates, however, is still quite rare, and many aspects remain unexplored. This paper uses computational fluid dynamics to perform a three-dimensional numerical simulation of the GaNMOCVD reaction chamber. We investigated the influence of the graphite containers' rotational velocity and the metal matrix's temperature at various locations. When the pressure within the MOCVD chamber remains constant, increasing the graphite tray's rotational velocity enhances the temperature field distribution within the chamber. However, the flow field becomes unstable when the rotation rate exceeds 1000 rpm. Our findings serve as a crucial benchmark for the future parameter optimization of MOCVD growth of GaN on metals.
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| 3. |
- Wang, Shuaishuai, et al.
(författare)
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Fabrication of Super Uniform Nickel Bumps Using Electroless Plating on Micro-LEDs’ TFT Driver Substrates
- 2024
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Ingår i: Digest of Technical Papers - SID International Symposium. - 2168-0159 .- 0097-966X. ; 55:S1, s. 194-196
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Konferensbidrag (refereegranskat)abstract
- In this study, in order to achieve high-yield Micro-LED chip bonding and thus further advance the breakthrough of Micro- LED interconnect technology. In this study, an electroless plating method is used to achieve the highly uniform nickel bump arrays on thin film transistor (TFT) driver substrate. Initially, the photoresists AZ4620 and AZ2070 are chosen for the experiments, which can cover the step structure uniformly of TFT substrate. Subsequently, the morphology of bumps on the TFT substrate influenced by the plasma treatment and the deposition time is investigated. The 1% uniformity of the nickel bump arrays by the electroless plating for 30 minutes after 5-minute plasma treatment is achieved, which lays the foundation for the electroless plating self-bonding.
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