| 1. |
- Abgrall, N., et al.
(författare)
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The large enriched germanium experiment for neutrinoless double beta decay (LEGEND)
- 2017
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Ingår i: AIP Conference Proceedings. - : Author(s). - 1551-7616 .- 0094-243X. ; 1894
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Konferensbidrag (refereegranskat)abstract
- The observation of neutrinoless double-beta decay (0νββ) would show that lepton number is violated, reveal that neu-trinos are Majorana particles, and provide information on neutrino mass. A discovery-capable experiment covering the inverted ordering region, with effective Majorana neutrino masses of 15 - 50 meV, will require a tonne-scale experiment with excellent energy resolution and extremely low backgrounds, at the level of ∼0.1 count /(FWHM·t·yr) in the region of the signal. The current generation 76Ge experiments GERDA and the Majorana Demonstrator, utilizing high purity Germanium detectors with an intrinsic energy resolution of 0.12%, have achieved the lowest backgrounds by over an order of magnitude in the 0νββ signal region of all 0νββ experiments. Building on this success, the LEGEND collaboration has been formed to pursue a tonne-scale 76Ge experiment. The collaboration aims to develop a phased 0νββ experimental program with discovery potential at a half-life approaching or at 1028 years, using existing resources as appropriate to expedite physics results.
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| 2. |
- Lu, P. F., et al.
(författare)
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A theoretical investigation on thermoelectric performance of ternary (Bi1-xSbx)(2)Te-3 compound
- 2013
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Ingår i: Journal of Materials Science. - : Springer Science and Business Media LLC. - 0022-2461 .- 1573-4803. ; 48:14, s. 4999-5004
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Tidskriftsartikel (refereegranskat)abstract
- The electronic structure and thermoelectric properties of (Bi1-x Sb (x) )(2)Te-3 compound are investigated by using full-potential linearized augmented plane-wave method and semiclassical Boltzmann theory. The density of states and band structure are studied in detail. The transport coefficients are then calculated with the assumption of the constant relaxation time approximation. We investigated the thermoelectric properties at full range of Sb compositions from x = 0 to x = 1. By using the calculated thermoelectric properties and an averaged thermal conductivity, the figure of merit ZT is obtained. The theoretical investigations show a good agreement with the present experimental data.
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| 3. |
- Lu, P. F., et al.
(författare)
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Investigation on structural, electronic and magnetic propeties of Mn doped Ga12N12 clusters
- 2013
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Ingår i: Journal of Materials Science. - : Springer Science and Business Media LLC. - 0022-2461 .- 1573-4803. ; 48:24, s. 8552-8558
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Tidskriftsartikel (refereegranskat)abstract
- The structural, electronic, and magnetic properties of Ga12N12 cluster doped with monodoped and bidoped Mn atoms have been investigated based on the density functional theory. Substitutional, exohedral, and endohedral configurations are considered. The substitutional doping is found to be most favorable for monodoped clusters, while the bidoped clusters prefer the exohedral isomers. For all the isomer, the magnetic moment is mainly derived from 3d orbitals of Mn atom. The exohedral and endohedral bidoped Ga12N12 clusters all favor antiferromagnetic state.
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| 6. |
- Wang, Guilei, et al.
(författare)
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Integration of highly-strained SiGe materials in 14 nm and beyond nodes FinFET technology
- 2015
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Ingår i: Solid-State Electronics. - : Elsevier BV. - 0038-1101 .- 1879-2405. ; 103, s. 222-228
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Tidskriftsartikel (refereegranskat)abstract
- SiGe has been widely used as stressors in source/drain (S/D) regions of Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) to enhance the channel mobility. In this study, selectively grown Si1-xGex (0.33 <= x <= 0.35) with boron concentration of 1 x 10(20) cm(-3) was used to elevate the S/D regions on bulk FinFETs in 14 nm technology node. The epitaxial quality of SiGe layers, SiGe profile and the strain amount of the SiGe layers were investigated. In order to in-situ clean the Si-fins before SiGe epitaxy, a series of prebaking experiments at temperature ranging from 740 to 825 degrees C were performed. The results showed that the thermal budget needs to be limited to 780-800 degrees C in order to avoid any damage to the shape of Si-fins but to remove the native oxide which is essential for high epitaxial quality. In this study, a kinetic gas niodel was also applied to predict the SiGe growth profile on Si-fins with trapezoidal shape. The input parameters for the model include growth temperature, partial pressures of reactant gases and the chip layout. By knowing the epitaxial profile, the strain to the Si-fins exerted by SiGe layers can be calculated. This is important in understanding the carrier transport in the FinFETs. The other benefit of the modeling is that it provides a cost-effective alternative for epitaxy process development as the SiGe profile can be readily predicted for any chip layout in advance.
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