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1.	Chirita, V, et al. (author) Strain relaxation and thermal stability of the 3C-SiC(001)/Si(001) interface : A molecular dynamics study 1997 In: Thin Solid Films. - 0040-6090. ; 294:1-2, s. 47-49 Journal article (peer-reviewed)abstract Molecular dynamics (MD) and high-resolution electron microscopy (HREM) imaging are used to investigate the mechanism of strain relaxation of a model 3C-SiC(001)/Si(001) interface. It is found that the essential atomic mechanism governing this process is the formation of undulations in planes parallel and perpendicular to the interface. The net effect is the generation of misfit-accommodating dislocations, of the [removed] type, which allow for structure relaxation at 2, 700 and 1000 K. MD configurations are then used for HREM image simulations. Comparisons with actual HREM images of the interface support the model interface and relaxation mechanisms proposed herein.
2.	Selinder, T.I., et al. (author) Structural characterization of yttria (Y2O3) inclusions in YBa2Cu3O7−x films : Growth model and effect on critical current density 1993 In: Thin Solid Films. - 0040-6090. ; 229:2, s. 237-248 Journal article (peer-reviewed)abstract A higher critical current and enhanced pinning was obtained in c-axis-oriented YBa2Cu3O7−x (YBCO)films having a higher density of semicoherent yttria (Y2O3) inclusions. The films were grown by sputtering and the inclusion density depends on the fraction of N2O in the sputtering gas. The inclusions were studied by transmission electron microscopy, both in planar sections and in cross-sections. They are embedded in the YBCO matrix without disturbing its structure appreciably, and the inclusion density is up to about 1017 cm−3, comprising about 4% of the film volume. From the appearance of moiré fringes and from high resolution transmission electron micrographs, it is concluded that the inclusions are highly oriented and have coherent or semicoherent interfaces towards matrix. A model for formation of the yttria inclusions during film growth is presented, which includes nucleation of epitaxial coherent yttria islands, layer-by-layer growth and finally overgrowth by advancing steps of the YBCO film. The enhanced pinning and transport critical current densities, relation to film microstructure and the possible flux-pinning mechanisms by these yttria inclusions are discussed.
3.	Sjöström, H., et al. (author) Microstructure of amorphous C:H and metal-containing C:H films deposited on steel substrates 1993 In: Thin Solid Films. - 0040-6090. ; 232:2, s. 169-179 Journal article (peer-reviewed)abstract Cross-sectional transmission electron microscopy (XTEM), including high-resolution microscopy (HREM), was employed to characterize the interface between different amorphous hydrogenated carbon (a-C:H) films and steel substrates. Additional analyses using Auger electron spectroscopy (AES) and X-ray diffraction (XRD) were also performed. Films were deposited both by high-energy (50 keV) nitrogen ion-beam decomposition of large hydrocarbon molecules and by magnetron plasma decomposition of C2H2 in mixed Ar-C2H2 discharges. The latter method was also used to deposit Mo- or W-containing a-C:H films (Me-C:H films) onto steel substrates with interlayers of the pure metals between the substrate and Me-C:H film. The films were found to be truly amorphous except for the cases of the metal-containing films, where 1–2 nm crystalline clusters were present in an a-C:H matrix. In the case of Mo the clusters were identified from HREM micrographs to have a bcc-like structure, characteristic of metallic Mo. The metal interlayers had a columnar microstructure with column widths of ∼ 30 nm. The interfaces between the Mo and W interlayers and the a-C:H films were found to extend over 20–40 nm with a gradual crystalline-to-amorphous transition. In most of the a-C:H film-substrate interface regions a thin layer ( < 10 nm) was observed which was predominantly amorphous but contained a small fraction of crystalline grains. AES showed an increase of both O and N close to the interface. However, for the cases with Mo and W interlayers, the substrate surface contaminants were less localized, and on some parts of the substrate surface the lattice fringes of the substrate and metal interlayer phase were continuous across a sharp interface.
4.	Sjöström, H, et al. (author) Reactive magnetron sputter deposition of CNx films on Si(001) substrates : film growth, microstructure and mechanical properties 1994 In: Thin Solid Films. - : Elsevier BV. - 0040-6090. ; 246:1-2, s. 103-109 Journal article (peer-reviewed)abstract There is currently considerable interest in producing new materials with extreme combinations of mechanical properties such as high hardnesses and moduli. One example of such a material is crystalline C3N4, which has been predicted to have a bulk modulus higher than that of diamond. In this paper we report on experiments carried out to synthesize CNx thin films. The films were grown in an unbalanced magnetron-sputtering system by reactive sputtering of C in N2 discharges. Si(001) substrates with the native oxide removed by thermal desorption and then kept at temperatures ranging from 150 to 600°C and substrate bias voltages Vs between 7.5 and -200 V were used. The films were analysed using X-ray diffraction, transmission electron microscopy (TEM). Auger electron spectroscopy, Rutherford backscattering and nano-indentation tests. Typically the films were grown at rates of 5 nm s-1 to total thicknesses of 300 nm. Owing to an extensive re-sputtering, only low negative bias voltages (-80
5.	Rönnow, Daniel, et al. (author) Surface roughness of oxidised copper films studied by atomic force microscopy and spectroscopic light scattering 1998 In: Thin Solid Films. - 0040-6090 .- 1879-2731. ; 325:1-2, s. 92-98 Journal article (peer-reviewed)abstract The interface roughness of Cu2O films produced by thermal oxidation of Cu was studied by spectroscopic elastic light scattering and atomic force microscopy. No correlation could be found between the roughness of the two interfaces, although the amplitude and the length scale of the roughness changed in the same way with film thickness for both interfaces. Both interfaces were found to have a fractal dimension of two. A first order perturbation theory was used to analyse the light scattering data; theory and experiment are in good agreement within the limits of the theory.
6.	Almqvist, Nils, et al. (author) Roughness determination of plasma-modified surface layers with atomic force microscopy 1995 In: Thin Solid Films. - 0040-6090 .- 1879-2731. ; 270:1-2, s. 426-430 Journal article (peer-reviewed)abstract Graphite surfaces exposed to the deuterium plasma in the TEXTOR tokamak were characterized in detail by means of scanning probe microscopy, ion beam analysis and colorimetry methods. The aim is to study the composition and structure of thin layer deposits formed on surfaces subjected to the tokamak plasma. The surface roughness was measured and parametrized in terms of fractal dimension and scaling constant. Several different methods for the fractal analysis of plasma-exposed surfaces have been critically evaluated. The main emphasis of this paper is on the correlation between surface roughness (fractal parameters), the amount of deposited atoms and the layer thickness.
7.	Andersson, Kent, et al. (author) High stability titanium nitride based solar control films 1992 In: Thin Solid Films. - : Elsevier. - 0040-6090 .- 1879-2731. ; 214:2, s. 213-218 Journal article (peer-reviewed)abstract Triple-layer structures of TiO2TiN/TiO2 and quadruple layer structures of TiO2Al/TiN/TiO2 have been sputtered on glass substrates at temperatures ranging from room temperature to 300°C. The reflectance and transmittance were measured in the visible and the near-IR wavelength regions. The thin layer of aluminium, in the quadruple layer, oxidizes and forms a dense diffusion barrier. The multilayers exhibit improved optical selectivity which also improves with substrate temperature up to 300°C.
8.	Bantikassegn, W., et al. (author) Absence of Schottky barrier formation in junctions of Al and polypyrrole-polyelectrolyte polymer complexes 1993 In: Thin Solid Films. - 0040-6090 .- 1879-2731. ; 224:2, s. 232-236 Journal article (peer-reviewed)abstract Thin films of conducting polypyrrole doped with large polymeric anions of polystyrene-sulphonate are electrochemically prepared to study the metal/polymer junctions. Aluminium and gold contacts are vacuum deposited to form metal/polymer/gold sandwich structures for current-voltage characterization. Photoelectron spectroscopy, using UV and X-ray photons, is carried out to investigate the possible causes of current limitation in the Al/PPy(PSS) junction.
9.	Cardona, M., et al. (author) Ellipsometric investigations of piezo-optical effects 1998 In: Thin Solid Films. - 0040-6090 .- 1879-2731. ; 313-314, s. 10-17 Journal article (peer-reviewed)abstract An introduction to the stress-induced birefringence of solids, with emphasis on cubic and amorphous materials, is given. Most available experimental data have been obtained in the frequency region below the electronic absorption edge: the corresponding coefficients of the stress-optical tensor are then real. Above the edge (and also in the IR region of the Reststrahlen) they become complex. Ellipsometry is an excellent tool for the investigation of complex stress-optical functions. It also yields the hydrostatic pressure induced changes in the dielectric functions. Data obtained recently for diamond and zincblende-type crystals and their theoretical interpretation are discussed.
10.	Carlberg, M H, et al. (author) Defects and energy accommodation in epitaxial sputter deposited Mo/W superlattices studied by molecular dynamics 1998 In: Thin Solid Films. - : Elsevier. - 0040-6090 .- 1879-2731. ; 317:1-2, s. 10-13 Journal article (peer-reviewed)abstract We report here the results of a Molecular Dynamics-Embedded Atom Method-investigation of the pathways generating point defects in Mo/W superlattices during bombardment with energetic (50 to 200 eV) Ar and Kr neutrals. Energy accommodation coefficients are computed for the different structures and are found to be roughly independent of the incident energy, and substantially higher for structures with Mo on top. Several different types of defects are shown, and two general processes generating those are discussed. Trapping of the incoming noble gas was observed for the case of Kr impinging on structures with Mo as the top monolayer; this is interpreted as an effect of the small mass difference between the Mo and the Kr atoms. An increase in atomic mass of the gas translates into a more disparate behaviour of the studied structures. The energy exchange with the surface layer dictates the behaviour of the superlattice; this is accentuated when bombarding with the heavier gas, Kr. (C) 1998 Elsevier Science S.A.
11.	Dannetun, Per, et al. (author) High-resolution electron energy loss spectroscopy of thin crystalline highly oriented films of poly(tetrafluoroethylene) 1996 In: Thin Solid Films. - : Elsevier. - 0040-6090 .- 1879-2731. ; 286:1-2, s. 321-329 Journal article (peer-reviewed)abstract High-resolution electron energy loss spectroscopy (HREELS) spectra of highly oriented films of poly(tetrafluoroethylene) (PTFE) are reported. With one exception, all peaks in the spectra correspond to IR active vibrations. They are well resolved, and with a remarkably high intensity, more than two orders of magnitude greater than we have observed on any other polymer in HREELS. The angular distributions of the elastic peak, and of the vibrational peaks are very narrow, which indicates both a well ordered system and a dipolar scattering behaviour. No evidence of amorphous regions in these films is found. A Raman active mode can be observed in off-specular geometry, using an incident electron beam coplanar with the PTFE fibers direction. This corresponds to resonance excitation of a transient negative ion state, with a maximum cross-section at an incident electron kinetic energy of about 4 eV.
12.	Dilawar, Nita, et al. (author) Adhesion enhancement of diamond coatings on WC tools by high energy ion irradiation 1998 In: Thin Solid Films. - 0040-6090 .- 1879-2731. ; 323:1-2, s. 163-169 Journal article (peer-reviewed)abstract Microcrystalline diamond thin films were deposited on cemented tungsten carbide cutting tools by hot-filament chemical vapour deposition process. The coatings deposited were irradiated with 50 MeV Si7+ ions upto a dose of <1013 ions cm-2. The adhesion and wear characteristics of as-deposited and irradiated coatings were studied and it was found that irradiation induced increased adhesion of the coatings to the substrate resulting in reduced coating failure during wear tests.
13.	Dutta, Joydeep, et al. (author) Application of pyrosol deposition process for large-area deposition of fluorine-doped tin dioxide thin films 1994 In: Thin Solid Films. - : Elsevier BV. - 0040-6090. ; 239:1, s. 150-155 Journal article (peer-reviewed)
14.	Eriksson, Mats, 1963-, et al. (author) Morphology changes of thin Pd films grown on SiO2: influence of adsorbates and temperature 1999 In: Thin Solid Films. - 0040-6090 .- 1879-2731. ; 342:1-2, s. 297-306 Journal article (peer-reviewed)abstract Under certain conditions morphology changes occur when thin Pd films, grown on SiO2 at room temperature, are subject to elevated temperatures. First holes in the metal are observed, followed by network formation and finally isolation of metal islands. This process is known as agglomeration. The influence of gas exposures on this restructuring process has been studied by following variations in the capacitance of the structure and by atomic force microscopy, transmission electron microscopy and ultraviolet photoelectron spectroscopy. The capacitance measurements show that carbonaceous species have an impeding influence on the rate of agglomeration and may lock the film structure in a thermodynamic non-equilibrium state. By removing these species with oxygen exposure, i.e. by forming volatile CO and CO2, a clean surface is obtained and the agglomeration process can proceed. High oxygen or hydrogen coverages also lower the rate of restructuring, compared to the case of a clean surface. For the clean Pd surface, an apparent activation energy of 0.64 eV is found for the restructuring process.
15.	Hammar, M., et al. (author) Investigation of chemically vapour deposited tungsten and tungsten silicide as contacts to n+ and p+ silicon areas 1990 In: Thin Solid Films. - 0040-6090 .- 1879-2731. ; 185:1, s. 9-19 Journal article (peer-reviewed)abstract Tungsten and WSi2 have been examined as contact barriers between aluminium and n+ - or p+ -Si. The specific contact resistivity and diode leakage current were evaluated after heat treatment at different temperatures. Rutherford backscattering spectrometry measurements, X-ray diffraction analysis, scanning electron microscopy and sheet resistance measurements were performed to study the thermal stabilities of the Al/W/Si and Al/WSi2/Si systems. The contact resistivities of chemically vapour deposited tungsten and WSi2 to n+ -Si with a surface concentration of 7.5 × 1019 cm-3 were 8 × 10-7 Ωcm2 and 9 × 10-7 Ωcm2 respectively. To p+ -Si with a surface concentration of 2.6 × 1019 cm-3, they were 5 × 10-6 and 1 × 10-6 Ωcm2. Diffusion of aluminium was revealed to occur above 475°C in the case of tungsten and at 475°C in the case of WSi2. The void formation in silicon substrates was observed after heat treatment at 500°C for the Al/WSi2/Si system. The increase in leakage current for the Al/W/Si and Al/WSi2/Si structures is related to the onset of Si-Al interpenetration. Alloy formation was observed at 500°C for tungsten contacts whereas W-Al or other alloys were not detected up to 600°C for the WSi2 contact.
16.	Hirschauer, B, et al. (author) Highly oriented alpha-alumina films grown by pulsed laser deposition 1997 In: Thin Solid Films. - 0040-6090 .- 1879-2731. ; 305:1-2, s. 243-247 Journal article (peer-reviewed)abstract Highly oriented thin films of alpha-alumina have been grown by pulsed laser deposition on Si(lll). The influence of the substrate temperature on the film growth was studied by X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (MID). Ablation at temperatures between room temperature and 850 degrees C gave rise to incorporated crystalline aluminium (Al), while the stoichiometric and highly oriented alpha-Al2O3 films were obtained only at 850 degrees C. The XRD rocking curve measurements of the ablated films showed the full-width-at-half-maximum (FWHM) Of 0.2 degrees. Further annealing at 1000 degrees C in air for 26 h slightly improved out-of-plane orientation. (C) 1997 Elsevier Science S.A.
17.	Hirschauer, B, et al. (author) Studies of highly oriented CeO2 films grown on Si(111) by pulsed laser deposition 1999 In: Thin Solid Films. - 0040-6090 .- 1879-2731. ; 348:1-2, s. 3-7 Journal article (peer-reviewed)abstract CeO2 is an interesting buffer layer material for the growth of YBa(2)Cu(3)O(7-)delta overlayers on Si in devices, with the aim of preventing heat-diffusion due to its excellent lattice matching with Si and YBa(2)Cu(3)O(7-)delta. Epitaxial CeO2-films have been synthesised on Si(lll) by pulsed laser deposition. Stoichiometric changes of the CexOy-film depending on the ambient oxygen pressure during the deposition were studied by X-ray photoelectron spectroscopy. A method is presented for growing a sharp interface between CeO2 and Si(111). The dependence of the inplane orientation of the CeO2 film on the substrate temperature was investigated by X-ray diffraction. The best films, grown at 700 degrees C, showed full width at half maximum of the rocking curve close to 0.1 degrees, but already at room temperature very highly oriented films with less than 0.2 degrees were synthesised. (C) 1999 Elsevier Science S,A. All rights reserved.
18.	Jonsson, Lars, et al. (author) Compositional variations of sputter deposited Ti/W barrier layers on substrates with pronounced surface topography 1999 In: THIN SOLID FILMS. - 0040-6090 .- 1879-2731. ; 348:1-2, s. 227-232 Journal article (peer-reviewed)abstract Sputter deposited Ti/W barrier layers have been found to be Ti deficient with respect to the target composition, which is attributed to the preferential resputtering of Ti from the deposited films by energetic neutrals or ions from the discharge. On the o
19.	Kakanakova-Georgieva, Anelia, 1970-, et al. (author) Characterization of ohmic and Schottky contacts on SiC 1999 In: Thin Solid Films. - 0040-6090 .- 1879-2731. ; 343-344, s. 637-641 Journal article (peer-reviewed)abstract The interface chemistry of nickel and tungsten based contacts on SiC has been investigated by XPS on as-deposited samples and after contact formation. After annealing at 950 °C for 10 min, Ni/SiC and Ni/Si/SiC ohmic contacts are formed due to the chemical reactions, as a result of which Ni2Si appears. However, Ni/Si (instead of pure Ni) deposition on SiC leads to modification of the diffusion processes and formation of a contact layer free of carbon. After annealing at 1200 °C for 4 min, the WN (W)/SiC systems are characterized by strong interface reactions resulting in W5Si3 and W2C formation in the contact layer. The 800 °C annealed WN/SiC contact is characterized by a chemically inert interface, and is found to be of a Schottky type.
20.	Kakanakova-Georgieva, Anelia, 1970-, et al. (author) XPS characterization of tungsten based contact layers on 4H-SiC 1999 In: Thin Solid Films. - 0040-6090 .- 1879-2731. ; 337:1-2, s. 180-183 Journal article (peer-reviewed)abstract Annealed W (WN)/4H–SiC interfaces have been compared on the basis of X-ray photoelectron spectroscopy (XPS) studies. The 1200°C annealed W (WN)/4H–SiC structures are characterized by intense interface reactions leading to tungsten carbide and tungsten silicide formation in the contact layers. The 800°C annealed WN/4H–SiC structure exhibits a chemically inert interface, and the 800°C annealed WN/4H–SiC contact is found to be of a Schottky type with a barrier height of 0.94 eV and an ideality coefficient of 1.09.
21.	Kullman, L., et al. (author) Elastic Light Scattering and Electrochemical Durability of Electrochromic Tungsten-oxide-based Films 1996 In: Thin Solid Films. - 0040-6090 .- 1879-2731. ; 288:1-2, s. 330-333 Journal article (peer-reviewed)abstract Electrochromic W-oxide-based films were produced by reactive d.c. magnetron sputtering. Fluorination and substrate bias were used to modify the film properties. Spectral measurements of the total and diffuse light scattering showed that the diffuse component remained at much less than 1% in the visible, irrespective of electrochemical degradation, which is low enough for smart windows applications.
22.	Lloyd Spetz, Anita, et al. (author) X-ray photoemission and Auger electron spectroscopy analysis of fast responding activated metal oxide silicon carbide gas sensors 1997 In: Thin Solid Films. - : Elsevier. - 0040-6090 .- 1879-2731. ; 299:1-2, s. 183-189 Journal article (peer-reviewed)abstract Platinum-silicon dioxide-silicon carbide, MOSiC, sensors are possible to operate at high temperatures and show a gas sensitivity pattern which is of interest for many applications including exhaust gases from car engines. The introduction of a buffer layer of tantalum silicide between the metal and the silicon dioxide resulted, after an annealing step, in a very good adhesion of the gate contact and fast responding sensors with improved signal stability. Depth profiling using X-ray photoemission and Auger electron spectroscopy showed that the annealing step converts the tantalum silicide to a mixed phase predominantly containing tantalum pentoxide. Tantalum silicide as well as platinum silicide are also present in the metal-oxide interface region.
23.	Münger, Peter, et al. (author) Destabilization and diffusion of two-dimensional close-packed Pt clusters on Pt(111) during film growth from the vapor phase 1998 In: Thin Solid Films. - 0040-6090 .- 1879-2731. ; 318:1-2, s. 57-60 Journal article (peer-reviewed)abstract Cluster migration is known to be an important process during film growth at elevated temperatures, but relatively little quantitative data is available. We have used molecular dynamics simulations to follow the dynamics of small two-dimensional Pt clusters on Pt(lll) at 1000 K. While close-packed Pt-7 heptamers are extremely stable structures, the addition of a single-cluster vacancy or an on-top adatom immediately results in intracluster bond breaking, reconfigurations, rotations, the introduction of stacking faults, and greatly enhanced cluster-diffusion rates. Mapping center-of-mass motion for total simulation times > 145 ns revealed increases in cluster velocities by more than an order of magnitude with cluster migration occurring primarily by concerted motion and a novel diffusion mechanism involving double shearing of dimers/trimers. Contrary to some previous reports, edge-atom diffusion plays only a minor role. (C) 1998 Elsevier Science S.A.
24.	Ray, S., et al. (author) Bilayer SnO2:In/SnO2 thin films as transparent electrodes of amorphous silicon solar cells 1991 In: Thin Solid Films. - 0040-6090 .- 1879-2731. ; 199:2, s. 201-207 Journal article (peer-reviewed)
25.	Shao, Y., et al. (author) Oxidation and reduction of TiC/Co in O2 and H2 1994 In: Thin Solid Films. - : Elsevier BV. - 0040-6090 .- 1879-2731. ; 238:1, s. 8-11 Journal article (other academic/artistic)abstract A film of titanium carbide was deposited by the chemical vapor deposition technique on a molybdenum substrate and subsequently exposed to oxygen and hydrogen at elevated temperatures. Surface intermediates were studied by Auger electron spectroscopy. Oxidation of the bare film at 1000 K resulted in titanium oxide formation, preferentially at grain boundaries. This oxide was partly reduced in H2 under mild conditions. The low coverage of cobalt deposited at 300 K increases the rate of oxidation dramatically and a thick oxide was formed. This oxide is very stable and can only be partially reduced by prolonged heating in vacuo or in dihydrogen. Metallic cobalt wets the TiC under reducing conditions, but the mobility is low below 1000 K.
26.	Zubkans, J., et al. (author) In-situ modification of the NOx sensitivity of thin discontinuous platinum films as gates of chemical sensors 1995 In: Thin Solid Films. - : Elsevier. - 0040-6090 .- 1879-2731. ; 268:1-2, s. 140-143 Journal article (peer-reviewed)abstract It is shown how chemically sensitive metal-oxide semiconductor field-effect transistors with a thin discontinuous platinum gate can be modified for the detection of NOx. After a pulse of ammonia the sensors show an increased sensitivity to NOx. The threshold voltage shift induced by NOx is opposite to the direction before the ammonia pulse. The threshold voltage now increases due to NOx exposure, while hydrogen, ammonia and hydrocarbons cause a decrease of the threshold voltage. The temperature dependence of the NOx sensitivity suggests that after the ammonia pulse there are two competing polarisation phenomena caused by the interaction between NOx and the sensing surface. The results are of general interest since they indicate how thin sensing layers can be modified after fabrication to promote sensitivity towards specific molecules. Furthermore they shed some new light on the detection mechanisms of thin discontinuous metal gates.
27.	Barankova, Hana, et al. (author) Hysteresis effects in the sputtering process using two reactive gases 1995 In: Thin Solid Films. - 0040-6090. ; 260:2, s. 181-186 Journal article (peer-reviewed)abstract The reactive sputtering process involving two reactive gases has been investigated. Sputtering titanium in the presence of oxygen and nitrogen in argon was studied by means of optical emission and mass spectrometries. The experiments reveal the mechanism
28.	Bardos, L, et al. (author) Reactive deposition of diamond and Si carbide films by hydrogen plasma etching of graphite and Si in rf plasma jet 1993 In: Thin Solid Films. - 0040-6090 .- 1879-2731. ; 223, s. 218-222 Journal article (peer-reviewed)
29.	Berg, Sören, et al. (author) Large area selective thin film deposition by bias sputtering 1994 In: Thin Solid Films. - 0040-6090 .- 1879-2731. ; 241, s. 1-8 Journal article (peer-reviewed)
30.	Drott, J, et al. (author) Pore morphology influence on catalytic turn-over for enzyme activated porous silicon matrices 1998 In: THIN SOLID FILMS. - : ELSEVIER SCIENCE SA. - 0040-6090. ; 330:2, s. 161-166 Journal article (other academic/artistic)abstract The enzyme glucose oxidase (GOx) was coupled to porous silicon of different morphologies and the catalytic turn-over of glucose was recorded for the samples. The recorded catalytic turn-over of the samples clearly indicated the influence of morphology, wi
31.	Galnander, B, et al. (author) Non-destructive chemical analysis of sandwich structures by means of soft X-ray emission 1999 In: THIN SOLID FILMS. - : ELSEVIER SCIENCE SA. - 0040-6090. ; 344, s. 35-38 Journal article (other academic/artistic)abstract Soft X-ray emission spectroscopy provides information about elemental composition, including the light elements, as well as the chemical bonding. The probe depth reaches hundreds of nanometers but under certain conditions considerable surface sensitivity
32.	Gomez, M, et al. (author) Photoelectrochemical studies of dye-sensitized polycrystalline titanium oxide thin films prepared by sputtering 1999 In: THIN SOLID FILMS. - : ELSEVIER SCIENCE SA. - 0040-6090. ; 342:1-2, s. 148-152 Journal article (peer-reviewed)abstract Titanium oxide thin films were prepared by reactive DC magnetron sputtering of Ti in O-2 + Ar onto SnO2:F coated glass. A dye consisting of Cis-dithiocyanato-N-bis(2,2'-bipyridyl-4,4'-dicarboxylic acid) ruthenium (II) was incorporated by dipping the
33.	Greek, S, et al. (author) In situ tensile strength measurement and Weibull analysis of thick film and thin film micromachined polysilicon structures 1997 In: THIN SOLID FILMS. - : ELSEVIER SCIENCE SA LAUSANNE. - 0040-6090. ; 292:1-2, s. 247-254 Journal article (other academic/artistic)abstract A method is introduced in which tensile tests can be performed in situ on micromachined structures. The testing equipment consists of a testing unit mounted on a micromanipulator in a scanning electron microscope. The fracture loads of micromachined beam
34.	Hollman, P, et al. (author) Residual stress, Young's modulus and fracture stress of hot flame deposited diamond 1995 In: THIN SOLID FILMS. - : ELSEVIER SCIENCE SA LAUSANNE. - 0040-6090. ; 270:1-2, s. 137-142 Journal article (other academic/artistic)abstract Chemical vapour deposition (CVD) diamond coatings deposited on various substrates usually contain residual stresses. Since the residual stress affects the adhesion of the coating to the substrate, as well as the performance of the coating/substrate compos
35.	Kharrazi, M, et al. (author) High-rate dual-target dc magnetron sputter deposition of electrochromic MoO3 films 1997 In: THIN SOLID FILMS. - : ELSEVIER SCIENCE SA LAUSANNE. - 0040-6090. ; 295:1-2, s. 117-121 Journal article (peer-reviewed)abstract Mo oxide films with good electrochromic properties were produced by single-target and dual-target reactive d.c. magnetron sputtering. Dual-target deposition was shown capable of yielding optically functional films at a rate similar to 20 times higher
36.	LANFORD, WA, et al. (author) LOW-TEMPERATURE PASSIVATION OF COPPER BY DOPING WITH AL OR MG 1995 In: THIN SOLID FILMS. - : ELSEVIER SCIENCE SA LAUSANNE. - 0040-6090. ; 262:1-2, s. 234-241 Journal article (other academic/artistic)abstract The doping of copper with Al and Mg is discussed as a method of passivating the exposed surface of copper films proposed for use as a conductor in microelectronics. Doping by co-deposition and by diffusion from Cu/M/SiO2 bilayers, where M = Al or Mg, is d
37.	Lindström, H, et al. (author) Redox properties of nanoporous TiO2 (anatase) surface modified with phosphotungstic acid 1998 In: THIN SOLID FILMS. - : ELSEVIER SCIENCE SA. - 0040-6090. ; 323:1-2, s. 141-145 Journal article (other academic/artistic)abstract Nanostructured anatase TiO2 electrodes surface modified with inorganic metal oxide clusters, i.e., phosphotungstic acid (PWA), was studied by XPS and spectroelectrochemistry. The surface modifiers were electroactive and could be addressed reversibly by ch
38.	Nender, C, et al. (author) High bias sputtering for large area selective deposition 1993 In: Thin Solid Films. - 0040-6090 .- 1879-2731. ; 228, s. 87-90 Journal article (peer-reviewed)
39.	Nender, C, et al. (author) Monte Carlo simulations of ion assisted selective deposition 1990 In: Thin Solid Films. - 0040-6090 .- 1879-2731. ; 193-194, s. 13-17 Journal article (peer-reviewed)
40.	Nordin, M, et al. (author) Influence of lamellae thickness on the corrosion behaviour of multilayered PVD TiN CrN coatings 1999 In: THIN SOLID FILMS. - 0040-6090. ; 348:1-2, s. 202-209 Journal article (other academic/artistic)abstract The corrosion behaviour of two multilayered TiN/CrN coatings with different chemical modulation period (10 and 125 nm, respectively) have been investigated in a 0.1 M H2SO4 solution. Single layered TiN and CrN have been included in the investigation and
41.	Nostell, P, et al. (author) Optical and mechanical properties of sol-gel antireflective films for solar energy applications 1999 In: THIN SOLID FILMS. - : ELSEVIER SCIENCE SA. - 0040-6090. ; 351:1-2, s. 170-175 Journal article (other academic/artistic)abstract Antireflective films on glass were prepared by a dip-coating method from a sol-gel, which consisted of 50 nm monodisperse silica particles mixed with ethanol and water. The solar transmittance increased by 5.4% for the best made sample. A visible transmit
42.	Otiti, T, et al. (author) Anisotropic optical, magnetic, and electrical properties of obliquely evaporated Ni films 1997 In: THIN SOLID FILMS. - : ELSEVIER SCIENCE SA. - 0040-6090. ; 307:1-2, s. 245-249 Journal article (peer-reviewed)abstract Obliquely evaporated Ni films were studied by spectrophotometry, SQUID magnetometry, and de electrical measurements. The results could be qualitatively understood from the presence of an inclined columnar microstructure with shape anisotropy governin
43.	Pecz, B, et al. (author) Structural investigation of SiC epitaxial layers grown under microgravity and on-ground conditions 1999 In: Thin Solid Films. - 0040-6090 .- 1879-2731. ; 357:2, s. 137-143 Journal article (peer-reviewed)abstract Thick 4H-, and 6H-SiC epitaxial layers have been grown by LPE from Si-Sc-C solvent at microgravity conditions during a space experiment, as well as on-ground. The samples are characterised by cross-sectional TEM and HRXRD. Layers grown at microgravity are relatively defect free, although their surfaces are always stepped. Control samples grown on-ground have similar surface appearance, but contain scandium carbide precipitates, nanopipes, micropipes and/or cavities as verified by TEM. However, none of the aforementioned defects was traced in the layers grown at microgravity conditions. So, samples grown at space microgravity conditions are superior in their defect structure to those ones grown on the ground. The defects called nanopipes can be described as empty pipes of about 200 nm diameter traversing the layer in the [0001] (growth) direction. The steps in the microgravity and on-ground samples have facets of {104} type crystallographic planes both in 6H-, and 4H-SiC. We suggest, that those facets are formed and preferred during growth due to a possible mechanism of decreasing the high energy of the growing Si terminated (0001) surface. (C) 1999 Elsevier Science S.A. All rights reserved.

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