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1.	Alouhmy, M., et al. (författare) Effects of hydrogen implantation on the magnetocaloric properties of amorphous FeZr films 2021 Ingår i: Vacuum. - : Elsevier. - 0042-207X .- 1879-2715. ; 186 Tidskriftsartikel (refereegranskat)abstract We report on the effects of H-implantation on the magnetic and magnetocaloric properties of amorphous FeZr films. Arrott plots reveal a second order ferromagnetic to paramagnetic phase transition for the as-grown and H-implanted films, with an increase in T-C from 160 to 200 K upon implantation. The maximum change in magnetic entropy (-Delta S-M) increases from 0.66 to 0.77J/kgK for a field change mu 0 Delta H = 1.5T, as well as the relative cooling power (RCP) values were improved from 84.5 to 108.6J/kg. This improvement was attributed to the increase in magnetization and chemical inhomogeneity induced by the implantation process. The increase in the chemical inhomogeneity was supported by the determination of the local exponent n extracted from the slope of Ln(-Delta S-M) as a function of Ln(mu 0H), which is line with the simulated depth profile of hydrogen atoms through the FeZr film.
2.	Bakhit, Babak, 1983-, et al. (författare) Dense Ti0.67Hf0.33B1.7 thin films grown by hybrid HfB2-HiPIMS/TiB2-DCMS co-sputtering without external heating 2021 Ingår i: Vacuum. - : Elsevier. - 0042-207X .- 1879-2715. ; 186 Tidskriftsartikel (refereegranskat)abstract There is a need for developing synthesis techniques that allow the growth of high-quality functional films at low substrate temperatures to minimize energy consumption and enable coating temperature-sensitive substrates. A typical shortcoming of conventional low-temperature growth strategies is insufficient atomic mobility, which leads to porous microstructures with impurity incorporation due to atmosphere exposure, and, in turn, poor mechanical properties. Here, we report the synthesis of dense Ti0.67Hf0.33B1.7 thin films with a hardness of ∼41.0 GPa grown without external heating (substrate temperature below ∼100 °C) by hybrid high-power impulse and dc magnetron co-sputtering (HfB2-HiPIMS/TiB2-DCMS) in pure Ar on Al2O3(0001) substrates. A substrate bias potential of −300 V is synchronized to the target-ion-rich portion of each HiPIMS pulse. The limited atomic mobility inherent to such desired low-temperature deposition is compensated for by heavy-mass ion (Hf+) irradiation promoting the growth of dense Ti0.67Hf0.33B1.7.
3.	Bakhit, Babak, 1983-, et al. (författare) Multifunctional ZrB2-rich Zr1-xCrxBy thin films with enhanced mechanical, oxidation, and corrosion properties 2021 Ingår i: Vacuum. - : Elsevier BV. - 0042-207X .- 1879-2715. ; 185 Tidskriftsartikel (refereegranskat)abstract Refractory transition-metal (TM) diborides have high melting points, excellent hardness, and good chemical stability. However, these properties are not sufficient for applications involving extreme environments that require high mechanical strength as well as oxidation and corrosion resistance. Here, we study the effect of Cr addition on the properties of ZrB2-rich Zr1-xCrxBy thin films grown by hybrid high-power impulse and dc magnetron co-sputtering (Cr-HiPIMS/ZrB2-DCMS) with a 100-V Cr-metal-ion synchronized potential. Cr metal fraction, x = Cr/(Zr+Cr), is increased from 0.23 to 0.44 by decreasing the power Pzrb2 applied to the DCMS ZrB2 target from 4000 to 2000 W, while the average power, pulse width, and frequency applied to the HiPIMS Cr target are maintained constant. In addition, y decreases from 2.18 to 1.11 as a function of Pzrb2, as a result of supplying Cr to the growing film and preferential B resputtering caused by the pulsed Cr-ion flux. ZrB2.18, Zr0.77Cr0.23B1.52, Zr0.71Cr0.29B1.42, and Zr0.68Cr0.32B1.38 2 films have hexagonal AlB2 crystal structure with a columnar nanostructure, while Zr0.64Cr0.36B1.30 and Zr0.56Cr0.44B1.11 are amorphous. All films show hardness above 30 GPa. Zr0.56Cr0.44B1.11 alloys exhibit much better toughness, wear, oxidation, and corrosion resistance than ZrB2.18. This combination of properties makes Zr0.56Cr0.44B1.11 ideal candidates for numerous strategic applications.
4.	Bardos, Ladislav, et al. (författare) Radio frequency powered spiral hollow cathodes 2020 Ingår i: Vacuum. - : PERGAMON-ELSEVIER SCIENCE LTD. - 0042-207X .- 1879-2715. ; 175 Tidskriftsartikel (refereegranskat)abstract Potential usage of the radio frequency (RF) spiral hollow electrodes in comparison with the compact hollow cathodes was examined for coating and other surface processing treatments. Most properties were found similar to the compact RF hollow cathodes. The non-conventional shapes of spiral hollow cathodes can be suitable for the inner coating in narrow tubes and pipes. Small diameter spiral cathodes can generate focused high-density ion flux capable of rapid etching of the substrate.
5.	Beshkova, Milena, et al. (författare) Properties and potential applications of two-dimensional AlN 2020 Ingår i: Vacuum. - : PERGAMON-ELSEVIER SCIENCE LTD. - 0042-207X .- 1879-2715. ; 176 Forskningsöversikt (refereegranskat)abstract The success of Graphene has triggered the research interest in other stable, single and few-atom-thick layers of van der Waals materials, which can possess attractive and technologically useful properties. Other complex structures, such as boron nitride, MXenes and metal chalcogenides have been successfully synthesized as layered materials showing advanced properties. Here, after an introduction briefing novel 2D materials, we focus on 2D AlN and present a review covering theoretical considerations on the stability of an infinite hexagonal AlN (h-AlN) sheet, differences that occur in the electronic structure between bulk AlN and single layer and discuss possible methods of tuning their electronic and magnetic properties by manipulating the surface and strain using DFT (density functional theory) computations. We address potential applications of 2D-AlN with an emphasis on gas sensing for CO2, CO, H-2, O-2, NO and NO2 in the presence of NH3. Further, we discuss some growth strategies of AlN single layer and few layers on different substrates. 2D AlN layers and nanotubes with ultrawide bandgap (9.20-9.60 eV) which shows a great potential to support innovative and front-end development of deep-ultraviolet optoelectronic devices are illustrated.
6.	Cengiz, Sezgin, 1984, et al. (författare) Effects of Nb on borosiliciding of CoCrFeNiNb x high-entropy alloy 2023 Ingår i: Vacuum. - : Elsevier BV. - 0042-207X. ; 207 Tidskriftsartikel (refereegranskat)abstract The effect of Nb addition (2, 5, 10 at. %) on the borosiliciding behavior of CoCrFeNiNbx high-entropy alloy was studied. Vacuum arc melted CoCrFeNiNbx alloys consisted of FCC and Laves-C14 phases. The increase of Nb in the alloys resulted in a decrease of the amount of FCC phase and an increase of the amount of Laves phase. A multiphase boride layer (BL) and a silicon-rich layer (SL) were evident with the formation of Ni2Si, FeB, Fe2B, Co2B, Cr5B3, Nb5Si3 and NbB2 phases after the thermochemical treatment. The Nb5Si3 and NbB2 phase formation was caused by the Nb addition into the CoCrFeNi alloy. The thickness of the SL + BL dramatically decreased, and the thickness of the transition zone/diffusion zone (DZ) decreased with increasing Nb content. The Nb content in the alloys hinders the inward diffusion of Si/B atoms and decreases the Si/B penetration depth. The total layer thicknesses were 45 μm, 27 μm and 12 μm for the alloys containing 2, 5 and 10 at. % Nb, respectively. The surface hardness values of alloys increased after surface treatment.
7.	Chang, Jui-Che, et al. (författare) HiPIMS-grown AlN buffer for threading dislocation reduction in DC-magnetron sputtered GaN epifilm on sapphire substrate 2023 Ingår i: Vacuum. - : PERGAMON-ELSEVIER SCIENCE LTD. - 0042-207X .- 1879-2715. ; 217 Tidskriftsartikel (refereegranskat)abstract Gallium nitride (GaN) epitaxial films on sapphire (Al2O3) substrates have been grown using reactive magnetron sputter epitaxy with a liquid Ga target. Threading dislocations density (TDD) of sputtered GaN films was reduced by using an inserted high-quality aluminum nitride (AlN) buffer layer grown by reactive high power impulse magnetron sputtering (R-HiPIMS) in a gas mixture of Ar and N2. After optimizing the Ar/N2 pressure ratio and deposition power, a high-quality AlN film exhibiting a narrow full-width at half-maximum (FWHM) value of the double-crystal x-ray rocking curve (DCXRC) of the AlN(0002) peak of 0.086° was obtained by R-HiPIMS. The mechanism giving rise the observed quality improvement is attributed to the enhancement of kinetic energy of the adatoms in the deposition process when operated in a transition mode. With the inserted HiPIMS-AlN as a buffer layer for direct current magnetron sputtering (DCMS) GaN growth, the FWHM values of GaN(0002) and (10 1‾ 1) XRC decrease from 0.321° to 0.087° and from 0.596° to 0.562°, compared to the direct growth of GaN on sapphire, respectively. An order of magnitude reduction from 2.7 × 109 cm−2 to 2.0 × 108 cm−2 of screw-type TDD calculated from the FWHM of the XRC data using the inserted HiPIMS-AlN buffer layer demonstrates the improvement of crystal quality of GaN. The result of TDD reduction using the HiPIMS-AlN buffer was also verified by weak beam dark-field (WBDF) cross-sectional transmission electron microscopy (TEM).
8.	Ekeroth, Sebastian, et al. (författare) Defect formation and growth in metal nanocomposites consisting of Cu nanoparticles embedded in Ni or Al coatings 2024 Ingår i: Vacuum. - : PERGAMON-ELSEVIER SCIENCE LTD. - 0042-207X .- 1879-2715. ; 228 Tidskriftsartikel (refereegranskat)abstract Fully inorganic or metallic nanocomposite coatings are promising materials for various applications but face limitations in term of their synthesis. A complementary synthesis process, Physical Vapor Deposition combined with magnetron sputtering and plasma-assisted gas-phase aggregation produced Cu nanoparticles embedded in metallic matrix. In this study, the effect of embedded nanoparticles on the matrix structure was investigated. Al and Ni were selected as matrix materials due to their different sputter yields leading to different growth modes film morphologies and difference in surface energy. Depending on the nanocomposite and deposition conditions, defects such as nodular growth were occasionally observed. These growth anomalies originated from the presence of nanoparticles creating new nucleation points for the matrix to grow disturbing the grain growth around it. Key factors responsible for their formation include the surface energy difference between the NPs and the matrix and the geometrical disruption occurring for large NP. In extreme cases with a high concentration of nanoparticles, coatings entirely constituted of nodular defects were produced which can be advantageous for applications needing large specific surface area.
9.	Ektarawong, A., et al. (författare) A comparison of the mixing thermodynamics of the antifluorite-structured Mg2Si1-xGex, Mg2Sn1-xGex and Mg2Si1-xSnx alloys from first principles 2021 Ingår i: Vacuum. - : PERGAMON-ELSEVIER SCIENCE LTD. - 0042-207X .- 1879-2715. ; 185 Tidskriftsartikel (refereegranskat)abstract The mixing thermodynamics of the antifluorite-structured Mg2Si1-xGex is investigated using the first-principles calculations. We find that Mg2Si and Mg2Ge readily mix with each other leading to formation of a single-phase random solid solutions of Mg2Si1-xGex across the entire composition range from the temperature of about 50 K and above. At 0 K, Mg2Si1-xGex exhibits a weak energy preference toward local phase segregation into Mg2Si and Mg2Ge without forming any ordered patterns of Si and Ge atoms. Through a comparison with the mixing thermodynamics of Mg2Sn with Mg2Si or Mg2Ge, a small lattice misfit between Mg2Si and Mg2Ge of less than 1 % is responsible for the formation of stable Mg2Si1-xGex random solid solutions at such a low temperature. Besides their thermodynamic stability, our prediction reveals that the random solid solutions of Mg2Si1-xGex are dynamically and mechanically stable. These findings justify the uses of structural models of Mg2Si1-xGex, assuming a random distribution of Si and Ge atoms in the previous theoretical studies, and also provide an insight into the complete solubility of Mg2Ge in Mg2Si and vice versa at all temperature where the atomic diffusion is activated.
10.	Gangaprasad Rao, Smita, 1992-, et al. (författare) Plasma diagnostics and film growth of multicomponent nitride thin films with magnetic-field-assisted-dc magnetron sputtering 2022 Ingår i: Vacuum. - : Elsevier. - 0042-207X .- 1879-2715. ; 204 Tidskriftsartikel (refereegranskat)abstract During direct current magnetron sputtering (dcMS) of thin films, the ion energy and flux are complex parameters that influence thin film growth and can be exploited to tailor their properties. The ion energy is generally controlled by the bias voltage applied at the substrate. The ion flux density however is controlled by more complex mechanisms.In this study, we look into magnetic-field-assisted dcMs, where a magnetic field applied in the deposition chamber by use of a solenoid coil at the substrate position, influences the energetic bombardment by Ar ions during deposition. Using this technique, CrFeCoNi multicomponent nitride thin films were grown on Si(100) substrates by varying the bias voltage and magnetic field systematically. Plasma diagnostics were performed by a Langmuir wire probe and a flat probe. On interpreting the data from the current-voltage curves it was confirmed that the ion flux at the substrate increased with increasing coil magnetic field with ion energies corresponding to the applied bias. The increased ion flux assisted by the magnetic field produced by the solenoid coil aids in the stabilization of NaCl B1 crystal structure without introducing Ar ion implantation.
11.	Geng, Dongsen, et al. (författare) Impact of Si addition on oxidation resistance of Zr-Si-N nanocomposite films 2021 Ingår i: Vacuum. - : PERGAMON-ELSEVIER SCIENCE LTD. - 0042-207X .- 1879-2715. ; 183 Tidskriftsartikel (refereegranskat)abstract Incorporating Si element into nitride films is known to enhance mechanical properties and oxidation resistance. Here, we reported the nanocomposite films of Zr-Si-N deposited using a hybrid deposited system combining rf magnetron sputtering from a Si3N4 target with dc magnetron sputtering from Zr target. Microstructure and oxidation resistance of Zr-Si-N nanocomposite films with 0-20.9 at.% Si content were investigated. The results indicated that the binary Zr-N film exhibits a typical columnar structure and the Zr-Si-N films become denser as the elevated Si content. The cross-section of film transforms to a dense and glassy structure when increasing the Si concentrations. The oxide scales of the Zr-Si-N films consist of ZrO2 nanograins and amorphous SiNx tissue. The introduction of the Si element significantly improves the oxidation resistance of the Zr-Si-N films due to the amorphous SiNx tissue phase suppresses both the inward diffusion of the oxygen and cracking in oxide scale caused by the phase transition from t-ZrO2 to m-ZrO2.
12.	Greczynski, Grzegorz, et al. (författare) Impact of sample storage type on adventitious carbon and native oxide growth : X-ray photoelectron spectroscopy study 2022 Ingår i: Vacuum. - : Pergamon-Elsevier Science Ltd. - 0042-207X .- 1879-2715. ; 205 Tidskriftsartikel (refereegranskat)abstract The type and degree of contamination on surfaces intended for X-ray photoelectron spectroscopy (XPS) studies is considered decisive for meaningful and reliable analysis as in many cases in-situ cleaning methods are not applicable or otherwise undesired. We report on the effects of sample storage environment on predominantly carbon-and oxygen-containing species accumulating on the surfaces of fourteen types of thin film samples spanning group IVB-VIB transition metals (TMs), TM nitrides, and TM diborides. All specimens were deposited by magnetron sputtering and stored for six months in different common sample storage environments such as openly on a shelf in the office or XPS lab, or within a polypropylene wafer carrier, polystyrene box, cellulose/polyester wipers or sealed polyethylene bag. Self-consistent modelling of C 1s, O 1s, B 1s, N 1s, and metal core level spectra allowed to identify the types and quantities of surface contaminants, metal oxidation states, and thicknesses of native oxides, as well as to address influence from storage ambient type and volume, direct sample contact to other surfaces, or material release from containers. The results reveal significant differences between the various storage types and, hence, provide guidance for all sorts of studies including even those that employ Ar+ ion etch prior to analyses, as also in such cases the amount and type of surface contaminants may impact the outcome.
13.	Hatamvand, Mohammad, et al. (författare) The role of different dopants of Spiro-OMeTAD hole transport material on the stability of perovskite solar cells : A mini review 2023 Ingår i: Vacuum. - 0042-207X. ; 214 Forskningsöversikt (refereegranskat)abstract Perovskite solar cells (PSCs) have demonstrated rapid advancements in power conversion efficiency (PCE) in recent years, reaching 25.7% within a decade. However, the stability of PSCs lags behind in comparison, with short lifetimes being a major obstacle to commercialization. The various layers and interfaces within PSCs play a significant role in both PCE and stability. Spiro-OMeTAD is the most common hole-transport material (HTM) used in PSCs with n-i-p configuration, due to its high performance. However, Spiro-OMeTAD’s bulky structure leads to low hole mobility and conductivity, making it an inefficient hole transporter. Doping Spiro-OMeTAD with specific organic and inorganic materials can increase PCE, but also introduces side effects on PSC stability. This review focuses on the effects of dopants on the stability of PSCs using Spiro-OMeTAD HTM and offers suggestions for enhancing PSC stability through dopant engineering for the eventual commercialization of PSCs.
14.	Hellgren, Niklas, et al. (författare) High-power impulse magnetron sputter deposition of TiBx thin films : Effects of pulse length and peak current density 2024 Ingår i: Vacuum. - : Elsevier. - 0042-207X .- 1879-2715. ; 222 Tidskriftsartikel (refereegranskat)abstract We report on a systematic study of the effect of pulse length (ton=25−200μs), and peak target current density (JT,peak=0.25−2.0A/cm2) during HiPIMS deposition of AlB2-phase TiBx thin films from a TiB2 target at a pressure of pAr=1.33Pa(10mTorr) and substrate temperature Ts=500°C. All films are under-stoichiometric with B/Ti = 1.36–1.89, with the higher values corresponding to longer pulses and higher JT,peak values. While the deposition flux, including both ions and neutrals, in general increases with increasing ton and JT,peak, the Ti+ ion flux saturates, resulting in the higher B/Ti values under these conditions. Thus, the relative amount of Ti ionization, and the degree to which these ions are guided toward the substrate by magnetic fields, are main modulators determining the composition of TiBx thin films.
15.	Holeňák, Radek, et al. (författare) Sensitive multi-element profiling with high depth resolution enabled by time-of-flight recoil detection in transmission using pulsed keV ion beams 2022 Ingår i: Vacuum. - : Elsevier. - 0042-207X .- 1879-2715. ; 204 Tidskriftsartikel (refereegranskat)abstract The potential of time-of-flight recoil detection for sensitive multi-element profiling of thin membranes and quasi -2D systems in transmission geometry using pulsed keV ion beams is assessed. While the time-of-flight approach allows for simultaneous detection of multiple elements, to the largest extent irrespective of recoil charge states, the keV projectile energies guarantee high recoil-cross sections yielding high sensitivity at low dose. We demonstrate the capabilities of the approach using 22Ne and 40Ar as projectiles transmitted through thin carbon foils featuring optional LiF-coatings and single-crystalline silicon membranes for different sample preparation routines and crystal orientations.Using a large position-sensitive detector (0.13 sr), a depth resolution below 6 nm and sensitivity below 1014 atoms/cm2 was achieved for H in a 50 nm thick silicon membrane. For crystalline targets, we show how the probability of creation and detection of recoils and their observed angular distribution depend on sample orientation.
16.	Holeňák, Radek, et al. (författare) Simultaneous assessment of energy, charge state and angular distribution for medium energy ions interacting with ultra-thin self-supporting targets : A time-of-flight approach 2021 Ingår i: Vacuum. - : Elsevier. - 0042-207X .- 1879-2715. ; 185 Tidskriftsartikel (refereegranskat)abstract We demonstrate simultaneous measurements of the charge state, energy and angular distribution of keV ions in transmission experiments through self-supporting foils. Using a time-of-flight approach we have introduced an electrostatic deflection apparatus as an extension to existing medium energy ion scattering (MEIS) instrumentation. Different positive, neutral and negative charge states have been discriminated and quantified for initially singly charged beams of He, N, O and Ne in the energy range from 25 to 250 keV. In parallel, the ion energy after interaction with the target has been assessed for all detected particles, while particles can be discriminated by deflection angle. Self-supporting thin carbon foils were used as samples to benchmark our experiments with literature data where available.
17.	Högberg, Hans, et al. (författare) Reactive sputtering of CSx thin solid films using CS2 as precursor 2020 Ingår i: Vacuum. - : PERGAMON-ELSEVIER SCIENCE LTD. - 0042-207X .- 1879-2715. ; 182 Tidskriftsartikel (refereegranskat)abstract We deposit CSx thin solid films by reactive direct current magnetron sputtering of a C target in an argon plasma, using carbon disulfide (CS2) as a precursor to film growth. We investigate the influence of the partial pressure of the CS2 vapor introduced into the plasma on the composition, the chemical bonding structure, the structural, and the mechanical properties as determined by x-ray photoelectron spectroscopy (XPS), Raman spectroscopy, scanning electron microscopy (SEM), and nanoindentation for films deposited at 150 and 300 degrees C. The Raman and the XPS results indicate that S atoms are incorporated in mostly sp(2) bonded C network. These results agree with previous ab-initio theoretical findings obtained by modeling of the CSx compound by the Synthetic Growth Concept. The microstructure of the films as well as the results of their Raman characterization and the nano mechanical testing results all point out that with the increasing S content some spa bonding is admixed in the predominantly sp(2) bonded CSx network, leading to typical amorphous structure with short and interlocked graphene-like planes for S contents between 2% and 8%. We conclude that CSx thin solid films deposited by using CS2 as a precursor would be CSx films deposited at low temperature of similar to 150 degrees C and with an S content in the region of 6 at.% may be interesting candidates for applications as hard/elastic protective coatings.
18.	Jenninger, Berthold, et al. (författare) Development of a design for an ionisation vacuum gauge suitable as a reference standard 2021 Ingår i: Vacuum. - : Elsevier Ltd. - 0042-207X .- 1879-2715. ; 183 Tidskriftsartikel (refereegranskat)abstract The EURAMET EMPIR project “16NRM05 - Ion gauge” aims to develop an ionisation vacuum gauge suitable as a reference vacuum standard. In such a gauge the electron trajectories and their kinetic energy inside the ionisation volume should be well defined and stable. In the search for a suitable design, a series of simulations on different ionisation gauge concepts that have the potential to meet stringent stability requirements have been carried out. Different software packages were used for this purpose. This paper focuses on the design aspects and the performance of the different ionisation gauge concepts that have been investigated by simulation. Parameters such as ionisation gauge sensitivity, ion collection efficiency and electron transmission efficiency, have been determined as a function of emission current, pressure and electron source alignment.
19.	Jousten, Karl, et al. (författare) Electrons on a straight path : A novel ionisation vacuum gauge suitable as reference standard 2021 Ingår i: Vacuum. - : Elsevier Ltd. - 0042-207X .- 1879-2715. ; 189 Tidskriftsartikel (refereegranskat)abstract The consortium of the European project 16NRM05 designed a novel ionisation vacuum gauge in which the electrons take a straight path from the emitting cathode through the ionisation space into a Faraday cup. Compared to existing ionisation vacuum gauges, this has the advantage that the electron path length is well defined. It is independent of the point and angle of emission and is not affected by space charge around the collector. In addition, the electrons do not hit the anode where they can be reflected, generate secondary electrons or cause desorption of neutrals or ions. This design was chosen in order to develop a more stable ionisation vacuum gauge suitable as reference standard in the range of 10−6 Pa to 10−2 Pa for calibration purposes of other vacuum gauges and quadrupole mass spectrometers. Prototype gauges were produced by two different manufacturers and showed predictable sensitivities with a very small spread (<1.5%), very good short-term repeatability (<0.05%) and reproducibility (<1%), even after changing the emission cathode and drop-down tests. These characteristics make the gauge also attractive for industrial applications, because a gauge exchange does not require calibration or re-adjustment of a process.
20.	Khairy, Kholida Tul, et al. (författare) Thermochromic properties of vanadium oxide thin films prepared by reactive magnetron sputtering at different oxygen concentrations 2023 Ingår i: Vacuum. - : Elsevier. - 0042-207X .- 1879-2715. ; 210 Tidskriftsartikel (refereegranskat)abstract Vanadium dioxide (VO2) is a thermochromic (TC) material, exhibits a reversible transmittance change in the near-infrared (NIR) region upon heating above a critical temperature tic, due to an insulator-to-metal phase transition. Numerous studies on the V-O system can be found in the literature, including the synthesis of VO2 films. The phase diagram of the V-O system involves complicated suboxide phases that prevent pure VO2 for-mation and obscures quantitative analysis. Here, VO2 thin films were systematically prepared with various ox-ygen flow ratios (r) using reactive magnetron sputtering. Thin films prepared with r = 4.1% show dominant VO2 phase and the highest TC performance. The r -range producing dominant VO2 phase is found to be narrow: 3.7% < r<4.2%. At lower and higher r, TC characteristics are shown to be accompanied, as expected, by electrical conductivity changes, but also by microstructure transformations. The latter producing textured films that gradually develop upon cycling around tic. In particular, a change of texture, yielding oriented VO2 crystallites, is observed by in-situ XRD around tic. Our results shed light on the VO2 formation and associated structural, chemical and electrical properties under various oxidizing conditions during magnetron sputtering, which calls for careful preparation and strategies to stabilize the VO2 phase.
21.	le Febvrier, Arnaud, 1986-, et al. (författare) An upgraded ultra-high vacuum magnetron-sputtering system for high-versatility and software-controlled deposition 2021 Ingår i: Vacuum. - : Elsevier. - 0042-207X .- 1879-2715. ; 187 Tidskriftsartikel (refereegranskat)abstract Magnetron sputtering is a widely used physical vapor deposition technique. Reactive sputtering is used for the deposition of, e.g, oxides, nitrides and carbides. In fundamental research, versatility is essential when designing or upgrading a deposition chamber. Furthermore, automated deposition systems are the norm in industrial production, but relatively uncommon in laboratory-scale systems used primarily for fundamental research. Combining automatization and computerized control with the required versatility for fundamental research constitutes a challenge in designing, developing, and upgrading laboratory deposition systems. The present article provides a detailed description of the design of a lab-scale deposition chamber for magnetron sputtering used for the deposition of metallic, oxide, nitride and oxynitride films with automated controls, dc or pulsed bias, and combined with a coil to enhance the plasma density near the substrate. LabVIEW software (provided as Supplementary Information) has been developed for a high degree of computerized or automated control of hardware and processes control and logging of process details.
22.	Leiner, Thomas, et al. (författare) On energetics of allotrope transformations in transition-metal diborides via plane-by-plane shearing 2023 Ingår i: Vacuum. - : PERGAMON-ELSEVIER SCIENCE LTD. - 0042-207X .- 1879-2715. ; 215 Tidskriftsartikel (refereegranskat)abstract Transition metal diborides crystallize in the α, γ, or ω type structure, in which pure transition metal layers alternate with pure boron layers stacked along the hexagonal [0001] axis. Here we view the prototypes as different stackings of the transition metal planes and suppose they can transform from one into another by a displacive transformation. Employing first-principles calculations, we simulate sliding of individual planes in the group IV-VII transition metal diborides along a transformation pathway connecting the α, γ, or ω structure. Chemistry-related trends are predicted in terms of energetic and structural changes along a transformation pathway, together with the mechanical and dynamical stability of the different stackings. Our results suggest that MnB2 and MoB2 possess the overall lowest sliding barriers among the investigated TMB2s. Furthermore, we discuss trends in strength and ductility indicators, including Youngs modulus or Cauchy pressure, derived from elastic constants.
23.	Magnuson, Martin, 1965-, et al. (författare) Review of Transition-Metal Diboride Thin Films 2022 Ingår i: Vacuum. - : Elsevier. - 0042-207X .- 1879-2715. ; 196 Forskningsöversikt (refereegranskat)abstract We review the thin film growth, chemistry, and physical properties of Group 4-6 transition-metal diboride (TMB2) thin films with AlB2-type crystal structure (Strukturbericht designation C32). Industrial applications are growing rapidly as TMB2 begin competing with conventional refractory ceramics like carbides and nitrides, including pseudo-binaries such as Ti1-xAlxN. The TMB2 crystal structure comprises graphite-like honeycombed atomic sheets of B interleaved by hexagonal close-packed TM layers. From the C32 crystal structure stems unique properties including high melting point, hardness, and corrosion resistance, yet limited oxidation resistance, combined with high electrical conductivity. We correlate the underlying chemical bonding, orbital overlap, and electronic structure to the mechanical properties, resistivity, and high-temperature properties unique to this class of materials. The review highlights the importance of avoiding contamination elements (like oxygen) and boron segregation on both the target and substrate sides during sputter deposition, for better-defined properties, regardless of the boride system investigated. This is a consequence of the strong tendency for B to segregate to TMB2 grain boundaries for boron-rich compositions of the growth flux. It is judged that sputter deposition of TMB2 films is at a tipping point towards a multitude of applications for TMB2 not solely as bulk materials, but also as protective coatings and electrically conducting high-temperature stable thin films.
24.	Magnusson, Roger, 1977-, et al. (författare) Preparation and tunable optical properties of amorphous AlSiO thin films 2021 Ingår i: Vacuum. - : Elsevier. - 0042-207X .- 1879-2715. ; 187 Tidskriftsartikel (refereegranskat)abstract Thin films in the aluminosilicate (AlSiO) system containing up to 31 at. % Al and 23 at. % Si were prepared by reactive RF magnetron co-sputtering in order to investigate the dependence of film formation and optical properties on substrate temperature and Si and Al contents. The obtained films were amorphous with smooth microstructure. The growth rate at different substrate temperatures ranged from 1.2 to 3.3 nm/min and increase with increasing the Si target power. The roughness decreases and thickness increases with increasing Si content. The thickness of the films grown at a deposition temperature of 100 °C is found to be higher than the films deposited at 300 and 500 °C. The AlSiO-coated glasses have a higher transmission in the visible region than the uncoated glass. The spectroscopic ellipsometry analysis reveals that the refractive index value decreased with decreasing the Al content, having extinction coefficient values of zero in the measured spectral region and band gap values ≥ 3.4 eV. The obtained thin films have over 90% transmittance in the visible range and no systematic variation of transmittance was observed with substrate temperature. The results suggest that glass substrate coated with AlSiO thin films have improved optical properties.
25.	Malyshev, O. B., et al. (författare) Preface 2022 Ingår i: Vacuum. - Oxford, United Kingdom : Elsevier. - 0042-207X .- 1879-2715. ; 197 Tidskriftsartikel (övrigt vetenskapligt/konstnärligt)
26.	Nedfors, Nils, et al. (författare) The influence of pressure and magnetic field on the deposition of epitaxial TiBx thin films from DC magnetron sputtering 2020 Ingår i: Vacuum. - : Elsevier BV. - 0042-207X .- 1879-2715. ; 177 Tidskriftsartikel (refereegranskat)abstract Magnetron sputter deposition of TiBx thin films from a TiB2 target typically results in highly overstoichiometric films due to differences in sputtered-atom ejection angles and gas-phase scattering during transport to the substrate. This study investigates the effects of the magnetron magnetic field strength at the substrate position and the Ar sputtering pressure on the resulting film composition and crystalline quality. It is shown that the B/Ti atomic ratio can be reduced from 2.7 to 2.1 by increasing the Ar pressure from 5 mTorr to 20 mTorr, a trend consistent with previous work. Despite the use of a relatively high Ar pressure, a change to a stronger outer magnetic pole leads to, dense TiB2.1 films of high crystal quality, as shown by X-ray diffraction, scanning transmission electron microscopy, and specific resistivity of 32 mu Omega cm. For epitaxial films deposited at 900 degrees C on Al2O3(001), a TiB2[110]//Al2O3[100] orientational relationship were obtained.
27.	Osinger, Barbara, et al. (författare) Structural and mechanical properties of magnetron sputtered (NbxMo1-x)C thin films 2024 Ingår i: Vacuum. - : Elsevier. - 0042-207X .- 1879-2715. ; 224 Tidskriftsartikel (refereegranskat)abstract While transition metal carbides (TMCs) exhibit favourable mechanical properties, alloying according to the valence electron concentration (VEC) has the potential to further enhance the properties of these hard but inherently brittle materials. This study investigates the influence of alloying on the microstructure and mechanical properties of (NbxMo1-x)C carbide films, including binary references and ternary compositions with varying metal ratios (x between 0.35 and 0.53). Furthermore, the influence of various substrate materials is studied by comparing films deposited on Al2O3, MgO and SiO2. All films exhibit a NaCl-type carbide structure and X-ray photoelectron spectroscopy revealed the presence of small amounts of an additional amorphous carbon (a-C) phase. Hardness values around 20 ± 2 GPa were obtained for the films on Al2O3 and MgO, whereas a reduced hardness of 11 ± 1 GPa was observed for the films on SiO2 which is attributed to larger crystallite size and more polycrystalline structure. Overall no clear trend as a function of composition can be noted, indicating that microstructure effects dominate the mechanical properties in this study overshadowing the effect of varying the metal content.
28.	Pingen, Katrin, et al. (författare) High growth rate magnetron sputter epitaxy of GaN using a solid Ga target 2024 Ingår i: Vacuum. - : PERGAMON-ELSEVIER SCIENCE LTD. - 0042-207X .- 1879-2715. ; 220 Tidskriftsartikel (refereegranskat)abstract Magnetron sputter epitaxy (MSE) is a promising processing route for group-III nitride semiconductors, with the potential to enable high-quality and low cost GaN growth for widespread use. However, fundamental techno-logical hurdles must be overcome to enable the adoption of MSE in industrial production. Here, we present a new UHV-compatible magnetron design with high-performance cooling, enabling high GaN growth rates at high growth temperatures using a solid Ga target. The magnetron is tested with a wide range of process parameters and a stable process is feasible while maintaining the solid state of the Ga target. High GaN growth rates of up to 5 mu m/h are achieved at room temperature and a growth rate of 4 mu m/h at high temperature, which is one order of magnitude higher compared to MSE with a liquid target. We grow GaN on c-plane sapphire substrates and show the impact of partial pressure ratio and target-to-substrate distance (TSD) on growth rate, film morphology and crystal quality of GaN films with scanning electron microscopy and X-ray diffraction. While the growth rate and film morphology are strongly impacted by the process parameter variation, the crystal quality is further impacted by the overall film thickness. For a 2 mu m thick GaN film a full width at half maximum of X-ray rocking curve (omega-FWHM) of GaN 10 1 1 reflection of 0.32 degrees is achieved. We demonstrate a process window for growth of dense and smooth GaN films with high crystal quality using low N2 flow rates and high TSD. By introducing a 20 nm AlN nucleation layer prior to the growth of 390 nm GaN, the omega-FWHM of GaN 0002 reflection of 0.19 degrees is achieved. The epitaxially grown crystalline structure is precisely examined by transmission electron microscopy.
29.	Schnitter, Claudia, et al. (författare) Effect of low-energy ion assistance on the properties of sputtered ZrB2 films 2022 Ingår i: Vacuum. - : Pergamon-Elsevier Science Ltd. - 0042-207X .- 1879-2715. ; 195 Tidskriftsartikel (refereegranskat)abstract Zirconium diboride (ZrB2) films have been deposited by direct current magnetron sputtering (DCMS) from a ZrB2 compound target on Al2O3 (0001) substrates held at 600, 700, 800, and 900 degrees C, and with two different axial magnetic field strengths, 34 and 104 G, generated using a coil surrounding the substrate. Plasma probe measurements show an increase of the ion fluxes on floating-potential substrates of the two different configurations by a factor of 2.8 for 104 G compared to 34 G, while the ion energy remained relatively constant at approximate to 12 eV. Time-of-flight elastic recoil detection analysis (ToF-ERDA) show that films deposited with a magnetic field of 34 G are highly overstoichiometric with B/Zr ratios approximate to 2.4, while films deposited with 104 G exhibit a B/Zr ratios approximate to 2.1. The levels of oxygen and carbon in the films are below 1 at. % irrespective of growth conditions. X-ray diffraction (XRD) 0/20 scans, complemented by pole figure measurements, reveal that all deposited films are 0001-oriented. XRD 0/20 scans of the 000t peak intensities and co (rocking-curve) widths show increased ZrB2 crystal quality with increasing temperature for both magnetic field strengths. Minimum electrical resistivity of approximate to 100 p omega cm is achieved for an axial magnetic field of 104 G, independent of temperature.
30.	Silva, M. F., et al. (författare) Magnesium fluoride as low-refractive index material for near-ultraviolet filters applied to optical sensors 2020 Ingår i: Vacuum. - : Elsevier BV. - 0042-207X. ; 181 Tidskriftsartikel (refereegranskat)abstract This article describes the fabrication of MgF2 and MgO thin-film-based optical filters and compares the optical transmission of the filters over UV. The MgF2 thin-films were deposited by use of an e-beam technique and their optical properties were characterised by ellipsometry. The effect of substrate temperature on the optical properties was studied. The MgF2 optimum refractive indices were obtained with a substrate temperature between 200 °C and 300 °C. Optical simulations were performed to compare the performance of MgF2 and MgO in the fabrication of near-UV narrow bandpass optical filters. While MgO-based optical filters result in a higher transmittance peak intensity, especially at 350 nm, the MgF2 optical filters are narrower, present lower values of FWHM, a mean value of 20 nm. This feature could be especially relevant for specific applications on fluorescent optical sensors. Finally, a Fabry-Perot based on a MgF2/TiO2 optical filter was deposited, using an e-beam technique for the MgF2 thin-films and RF-sputtering technique for the TiO2 thin-films. The MgF2/TiO2 optical filter peak transmittance is approximately 70% close to 400 nm, as expected. The results are discussed with focus on applications in fluorescent optical sensors for peaks at 350, 370, 380 and 400 nm, respectively.
31.	Stanishev, Vallery, et al. (författare) Low Al-content n-type AlxGa1−xN layers with a high-electron-mobility grown by hot-wall metalorganic chemical vapor deposition 2023 Ingår i: Vacuum. - : PERGAMON-ELSEVIER SCIENCE LTD. - 0042-207X .- 1879-2715. ; 217 Tidskriftsartikel (refereegranskat)abstract In this work, we demonstrate the capability of the hot-wall metalorganic chemical vapor deposition to deliver high-quality n-AlxGa1−xN (x = 0 – 0.12, [Si] = 1×1017 cm−3) epitaxial layers on 4H-SiC(0001). All layers are crack-free, with a very small root mean square roughness (0.13 – 0.25 nm), homogeneous distribution of Al over film thickness and a very low unintentional incorporation of oxygen at the detection limit of 5×1015 cm−3 and carbon of 2×1016 cm−3. Edge type dislocations in the layers gradually increase with increasing Al content while screw dislocations only raise for x above 0.077. The room temperature electron mobility of the n-AlxGa1−xN remain in the range of 400 – 470 cm2/(V.s) for Al contents between 0.05 and 0.077 resulting in comparable or higher Baliga figure of merit with respect to GaN, and hence demonstrating their suitability for implementation as drift layers in power device applications. Further increase in Al content is found to result in significant deterioration of the electrical properties.
32.	Suliali, Nyasha J., et al. (författare) Ti thin films deposited by high-power impulse magnetron sputtering in an industrial system : Process parameters for a low surface roughness 2022 Ingår i: Vacuum. - : Pergamon-Elsevier Science Ltd. - 0042-207X .- 1879-2715. ; 195 Tidskriftsartikel (refereegranskat)abstract The influence of the choice of process parameters in an industrial high-power impulse magnetron sputtering (HiPIMS) system on the surface roughness and crystallinity of Ti coatings is presented in this work. A current density of 1 A/cm(2) was kept constant by varying the pulse frequency to control the average power. The films were characterised by scanning electron microscopy, atomic force microscopy, X-ray diffraction and transmission electron microscopy. The surface roughness, residual stress and grain size are discussed as a function of the HiPIMS target average power in the 1.45-7.90 kW range. The surface roughness, ranging from 14 to 24 nm, is lower than that of the SnO2 glass substrate, and has a non-linear dependence on the HiPIMS power. X-ray 20 diffraction shows (100), (001) and (101) orientation of the film crystallites. The peak shifts reveal a gradual reduction in residual stress as target power increases. Further, the effect of target power on crystal grain length and geometric orientation is also determined.
33.	Tiwari, Jitendar Kumar, 1995, et al. (författare) Engineered microstructure evolution in inconel 718 via laser powder bed fusion through a novel element-based approach 2024 Ingår i: Vacuum. - 0042-207X. ; 222 Tidskriftsartikel (refereegranskat)abstract Engineered microstructure enables localised control in mechanical properties within a single material. In this research, a novel element-based approach is proposed to engineer the microstructure by varying the laser power and scan speed in laser powder bed fusion (L-PBF) process. A sample containing 25 elements were printed at different laser power and scan speed values and the resultant microstructure exhibited that the textured grains increase with laser energy density (LED). Subsequently, the measured hardness of the element printed at highest LED was approximately 14 % higher than the element printed at lowest LED. Current research is a proof of concept for the element-based approach to engineer the microstructure through L-PBF technique which can be extended to the component level by correlating the microstructure with element position and laser parameters.
34.	Trybula, Marcela, et al. (författare) Temperature dependency of structure and order evolution in 2D confined oxide films grown on Al substrates using reactive molecular dynamics 2021 Ingår i: Vacuum. - : Elsevier BV. - 0042-207X .- 1879-2715. ; 190, s. 110243- Tidskriftsartikel (refereegranskat)abstract We performed molecular dynamics simulations by using Reactive Force Field method to study the impact of temperature on the structure, topology and order given in terms of configurational entropy of 2D-confined oxide film formed upon thermal oxidation of bare Al surfaces. The presence of O-O connections in 2D-confined oxide films has little impact on Al-O bond length and more pronounced one for coordination of atomic sites. The pentacoordinated Al sites and a random network of oxygen ions in the growing ultrathin oxide film promote the structural disorder. Amorphous structure forms with violated stoichiometry and reduced molar density of the 2Dconfined films.
35.	Villamayor, Michelle Marie S., et al. (författare) Growth of two-dimensional WS2 thin films by reactive sputtering 2021 Ingår i: Vacuum. - : Elsevier. - 0042-207X .- 1879-2715. ; 188 Tidskriftsartikel (refereegranskat)abstract We have deposited WS2 thin films on Si, SiO2/Si, and sapphire substrates by reactive sputtering from a WS2 target in an Ar/H2S atmosphere. We demonstrate that it is possible to deposit (001)-textured tungsten sulfide films that are thicker than 100 nm. However, the sputtered films are slightly substoichiometric with a composition of WS1.94. Films were deposited at different processing pressures (0.67 Pa?6.67 Pa), substrate temperatures (up to 700 ?C) and relative amounts of H2S (0%?100%) in the gas mixture. Structure, morphology, composition, and resistivity of the films were investigated for the different processing conditions. Results from X-ray diffraction show that best crystallization was achieved for the highest substrate temperatures and processing pressures. We show that the addition of H2S may help obtaining fully stoichiometric films and reduce the risk of losing the (001) texture for thicker films. The challenges of obtaining an epitaxial and fully stoichiometric film are pointed out and suggestions on how to modify the process parameters in order to obtain films with even higher quality are presented.
36.	von Fieandt, Kristina, et al. (författare) Optical and electrical properties of hard (Hf,Nb,Ti,V,Zr)N-x thin films 2021 Ingår i: Vacuum. - : Elsevier. - 0042-207X .- 1879-2715. ; 193 Tidskriftsartikel (refereegranskat)abstract (Hf,Nb,Ti,V,Zr)N-x coatings with nitrogen content between 0 and 49 at.% were deposited by sputter deposition, and thoroughly characterised. Nitrogen-free coatings were found to have a bcc structure, low hardness (8 GPa), and an electrical resistivity of 144 mu Omega cm. The nitride coatings (43-49 at.% N) had NaCl-type structure, consistent with a multi-component solid solution phase. Photoelectron core level binding energies indicate that the electronic structure of the multi-component nitride differs from that of the binary nitrides, probably a result of charge transfer between the metal atoms. The nitride coatings exhibited a dense microstructure and a hardness between 29 and 33 GPa, and electrical resistivities of 141-254 mu Omega cm. They also exhibited a minimum in the optical reflectance, similar to that of TiN, indicating plasmonic properties. The position of this minimum was found to be shifted to smaller wavelengths (272-339 nm) compared to a TiN reference (428 nm) and varied with nitrogen content. The tuneability of the optical properties, in combination with the potential to influence the electronic structure through charge transfer between metal atoms point to new interesting routes to design optical materials, and a new class of optical materials based on the concept of multi-component nitrides.
37.	Weigel, Kai, et al. (författare) Electron irradiation induced modifications of Ti(1-x)AlxN coatings and related buffer layers on steel substrates 2021 Ingår i: Vacuum. - : Elsevier. - 0042-207X .- 1879-2715. ; 185 Tidskriftsartikel (refereegranskat)abstract Ti(1-x )AlxN hard coatings were prepared by reactive magnetron sputtering onto steel substrates (51CrV4 - 1.8159) and subsequently exposed for a short-time (similar to 1 s) to high-flux electron beam (EB) treatment. Morphology, composition and the structure of as-deposited and EB treated coatings were investigated using transmission electron microscopy (TEM), secondary ion mass spectroscopy (SIMS) and X-ray diffraction (XRD). It was found that the EB treatment had only a minor influence on the morphology and crystallinity of the Ti(1-x)AlxN phase, however, the stress-free lattice parameter and partly the compressive stress in the coatings were clearly reduced by the treatment. On the other hand, major changes of composition profiles and structure were observed in the metallic buffer layer between substrate and Ti(1-x)AlxN. The observed modifications in the coating-substrate system are explained by rapid heat up and radiation damage due to the fast electron exposure.
38.	Xian, Lijun, et al. (författare) Effect of TiC addition and Co binder content in cemented carbide substrates on the microstructure and mechanical properties of the TiAlN-based composite films 2020 Ingår i: Vacuum. - : PERGAMON-ELSEVIER SCIENCE LTD. - 0042-207X .- 1879-2715. ; 182 Tidskriftsartikel (refereegranskat)abstract The development of cutting technologies promotes the diversification of cutting tool materials. To better guide the design and preparation of the surface films on different tools, it is necessary to explore the relationship between substrate materials and films properties. The TiAlN-(TiAlN/CrAlSiN)-TiAlN composite films were coated on cemented carbide substrates with different content of Co binder and TiC addition by arc ion plating. The results showed that Co binder in the cemented carbide reduced the surface energies of substrates, and the film on the cemented carbide substrate with higher Co content grew slower. (Ti,W)C phase formed in the cemented carbide substrate since WC dissolved in TiC, which was favorable for the growth of film. (Ti,W)C phase in the cemented carbide substrate improved the bonding strength of the composite film, but it reduced the hardness of the film. High Co binder content in cemented carbide substrate was disadvantageous to both the adhesion and hardness of the film. The composite films deposited on the WC-6wt%Co and WC -15 wt%TiC-6wt% Co achieved the maximum hardness and best bonding strength, respectively. The wear mechanism of the composite films on all different cemented carbide substrates was the mixture form of abrasive wear, oxidative wear, diffusion and adhesive wear.
39.	Zubkins, Martins, et al. (författare) Deposition of Ga2O3 thin films by liquid metal target sputtering 2023 Ingår i: Vacuum. - : Elsevier BV. - 0042-207X .- 1879-2715. ; 209, s. 111789- Tidskriftsartikel (refereegranskat)abstract This paper reports on the deposition of amorphous and crystalline thin films of Ga2O3 by reactive pulsed direct current magnetron sputtering from a liquid gallium target onto fused (f-) quartz and c plane (c-) sapphire sub-strates, where the temperature of the substrate is varied from room temperature (RT) to 800 degrees C. The deposition rate (up to 37 nm/min at RT on f-quartz and 5 nm/min at 800 degrees C on c-sapphire) is two to five times higher than the data given in the literature for radio frequency sputtering. Deposited onto unheated substrates, the films are X-ray amorphous. Well-defined X-ray diffraction peaks of 13-Ga2O3 start to appear at a substrate temperature of 500 degrees C. Films grown on c-sapphire at temperatures above 600 degrees C are epitaxial. However, the high rocking curve full width at half maximum values of X2.4-2.5 degrees are indicative of the presence of defects. A dense and void-free microstructure is observed in electron microscopy images. Composition analysis show stoichiometry close to Ga2O3 and no traces of impurities. The optical properties of low absorptance (<1%) in the visible range and an optical band gap of approximately 5 eV are consistent with the data in the literature for Ga2O3 films produced by other deposition methods.
40.	Zuo, Zhaoyang, et al. (författare) Effect of magnetic field on tribological properties of IN718 superalloy coating produced by laser cladding on GTD-111 superalloy 2022 Ingår i: Vacuum. - : Elsevier. - 0042-207X .- 1879-2715. ; 203 Tidskriftsartikel (refereegranskat)abstract The aim of this study was to investigate the effect of a magnetic field on the wear behavior of an IN718 layer applied by laser cladding on GTD-111 superalloy. The results showed that by increasing the intensity of the magnetic induction field from 25 mT to 75 mT, the grains become finer and the area of the equiaxed grains increases. This increased the hardness and decreased the porosity of the cladding zone (CZ). However, the greatest magnetostrictive effect was produced at a magnetic intensity of 25 mT, which reduced the elastic modulus of the specimen. Under such conditions, the hardness ratio to the elastic modulus reached its maximum value (3.97), which resulted in increased wear resistance of the CZ. © 2022 Elsevier Ltd

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