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Sökning: L773:1610 1642 > (2010-2014)

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1.
  • Afrasiabi, Roodabeh, et al. (författare)
  • Microwave mediated synthesis of semiconductor quantum dots
  • 2012
  • Ingår i: Physica Status Solidi. C, Current topics in solid state physics. - : Wiley. - 1610-1634 .- 1610-1642. ; 9:7, s. 1551-1556
  • Tidskriftsartikel (refereegranskat)abstract
    • Colloidal quantum dots (QD) have tuneable optoelectronic properties and can be easily handled by simple solution processing techniques, making them very attractive for a wide range of applications. Over the past decade synthesis of morphology controlled high quality (crystalline, monodisperse) colloidal QDs by thermal decomposition of organometallic precursors has matured and is well studied. Recently, synthesis of colloidal QDs by microwave irradiation as heating source is being studied due to the inherently different mechanisms of heat transfer, when compared to solvent convection based heating. Under microwave irradiation, polar precursor molecules directly absorb the microwave energy and heat up more efficiently. Here we report synthesis of colloidal II-VI semiconductor QDs (CdS, CdSe, CdTe) by microwave irradiation and compare it with conventional synthesis based on convection heating. Our findings show that QD synthesis by microwave heating is more efficient and the chalcogenide precursor strongly absorbs the microwave radiation shortening the reaction time and giving a high reaction yield.
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2.
  • Bi, Zhaoxia, et al. (författare)
  • InN quantum dots on GaN nanowires grown by MOVPE
  • 2014
  • Ingår i: physica status solidi (c). - : Wiley. - 1862-6351 .- 1610-1642 .- 1610-1634. ; 11, s. 421-424
  • Tidskriftsartikel (refereegranskat)abstract
    • In this work, growth of InN quantum dots (QDs) on GaN nanowires (NWs) by metal-organic vapour phase epitaxy is demonstrated, illustrating the feasibility to combine 0D and 1D structures for nitride semiconductors. Selective area growth was used to generate arrays of c-oriented GaN NWs using Si3N4 as the mask material. In general, InN QDs tend to form at the NW edges between the m-plane side facets, but the QD growth can also be tuned to the side facets by controlling the growth temperature and the growth rate. TEM characterization reveals that I1-type stacking faults are formed in the QDs and originate from the misfit dislocations at the InN/GaN interface. Photoluminescence measurement at 4 K shows that the peak shifts to high energy with reduced dot size. (C) 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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3.
  • Dagnelund, Daniel, et al. (författare)
  • Effect of thermal annealing on defects in post-growth hydrogenated GaNP
  • 2013
  • Ingår i: Physica Status Solidi. C, Current topics in solid state physics. - : John Wiley & Sons. - 1610-1634 .- 1610-1642. ; 10:4, s. 561-563
  • Tidskriftsartikel (refereegranskat)abstract
    • Effect of thermal annealing on paramagnetic centers in post-growth hydrogenated GaN0.0081P0.9919 epilayer is examined by means of photoluminescence and optically detected magnetic resonance (ODMR) techniques. In recent studies, several Ga-interstitial (Gai) related centers were found to be activated by the presence of hydrogen in the hydrogenated GaNP alloys. These centers compete with near-band edge radiative recombination. Annealing at 400 ºC in Ar-ambient is found to cause quenching of the Gai-related ODMR signals that were activated by post-growth hydrogenation. We tentatively ascribe this effect to dissociation of the H-Gai complexes and subsequent out-diffusion of H.
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4.
  • Fokine, Michael, 1970-, et al. (författare)
  • Spectral features of specular reflection from nanoparticle films
  • 2010
  • Ingår i: Physica Status Solidi. C, Current topics in solid state physics. - : Wiley. - 1610-1634 .- 1610-1642. ; 8:9, s. 2673-2675
  • Tidskriftsartikel (refereegranskat)abstract
    • In this work we analyze the internal reflection (Fresnel reflection) from Au nanoparticles on the end face of optical fibers. We demonstrate that changes in the refractive index of the surrounding medium can be detected by shifts in the reflection spectra associated with changes in the Localized Surface Plasmon Resonance of the Au-Nanoparticles. The spectral response is simulated using a model based on the interference in multilayer structures and can be described by transfer-matrix method.
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5.
  • Gogova, D., et al. (författare)
  • HVPE GaN substrates : growth and characterization
  • 2010
  • Ingår i: Physica Status Solidi. C, Current topics in solid state physics. - : Wiley. - 1610-1634 .- 1610-1642. ; 7:7-8, s. 1756-1759
  • Tidskriftsartikel (refereegranskat)abstract
    • GaN substrates with low dislocation densities were prepared by halide vapor-phase epitaxy (HVPE) on c-plane sapphire and by means of a post-growth laser-induced lift-off or natural stress-induced (self-) separation process. The HVPE growth on InGaN/GaN buffer layers and subsequent self-separation method was seen as advantageous, in comparison with the laser-induced lift-off one, in terms of lower cost and better crystalline quality of the GaN material obtained. (© 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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6.
  • Haarahiltunen, Antti, et al. (författare)
  • Gettering of iron in CZ-silicon by polysilicon layer
  • 2011
  • Ingår i: Physica Status Solidi. C, Current topics in solid state physics. - : Wiley-VCH Verlagsgesellschaft. - 1610-1634 .- 1610-1642. ; 8:3, s. 751-754
  • Tidskriftsartikel (refereegranskat)
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7.
  • Holmberg, Patrik, 1971-, et al. (författare)
  • Study of incubation effects during surface ablation using picosecond pulses at a wavelength of 800 nm
  • 2011
  • Ingår i: Physica Status Solidi. C, Current topics in solid state physics. - Weinheim : WILEY-VCH Verlag GmbH & Co. - 1610-1634 .- 1610-1642. ; 8:9, s. 2862-2865
  • Tidskriftsartikel (refereegranskat)abstract
    • A comparison of laser ablation on the front-surface (surface facing the laser) and back-surface of 1.1 mm thick boro-aluminosilicate glass plates has been performed using 1 ps pulses at a wavelength of 800 nm. The resulting structures of front- and back-surface ablation are compared relative to an input design geometry of 40 µm deep and 40 µm wide surface channels. The influence of incubation effects on the final structure is discussed.
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8.
  • Jalalian, Abolfazl, et al. (författare)
  • Fabrication of Ca, Zr doped BaTiO 3 ferroelectric nanofibers by electrospinning
  • 2012
  • Ingår i: Physica Status Solidi. C, Current topics in solid state physics. - : Wiley. - 1610-1634 .- 1610-1642. ; 9:7, s. 1574-1576
  • Tidskriftsartikel (refereegranskat)abstract
    • As first time, (Ba0.85Ca0.15)(Ti0.9Zr0.1)O-3 (BCTZ) nanofibers are synthesized by sol-gel assisted electrospining technique. Non-woven and bead-free BCTZ nanofibers mat was formed and a single chemical phase was achieved after calcination of the nanofibers at 700 degrees C in air. XRD and Raman spectroscopy show that BCTZ nanofibers crystallized in the morphotropic phase boundary (MPB) region.
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9.
  • Johansson, Sofia, et al. (författare)
  • High frequency vertical InAs nanowire MOSFETs integrated on Si substrates
  • 2012
  • Ingår i: Physica Status Solidi. C, Current Topics in Solid State Physics. - : Wiley. - 1610-1634. ; 9:2, s. 350-353
  • Tidskriftsartikel (refereegranskat)abstract
    • RF and DC characterization of vertical InAs nanowire MOSFET on Si substrates are presented. Nanowire arrays are epitaxially integrated on Si substrates by use of a thin InAs buffer layer. For device fabrication, high-k HfO2 gate dielectric and wrap-gates are used. Post-deposition annealing of the high-k is evaluated by comparing one annealed and one not-annealed sample. The annealed sample show better DC characteristics in terms of transconductance, g(m) = 155 mS/mm, and on-current, I-on = 550 mA/mm. Box plots of on-current, on-resistance and transconductance for all 190-nanowire-array transistors on the annealed sample suggest that the electrical properties of the nanowires are preserved when scaling the nanowire diameter. Finally, high frequency characterisation yields a unity current gain cut-off frequency of f(t) = 9.3 GHz for the annealed sample and f(t) = 2.0 GHz for the not-annealed sample. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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10.
  • Karim, Amir, et al. (författare)
  • Characterization of InAs/GaSb type€II superlattice photodiodes for mid€wave IR with different mesa sidewall passivation schemes
  • 2012
  • Ingår i: Physica Status Solidi. C, Current topics in solid state physics. - : Wiley. - 1610-1634 .- 1610-1642. ; c9:7, s. 1690-2
  • Tidskriftsartikel (refereegranskat)abstract
    • We report on the electrical material characterization of InAs/GaSb type-II superlattice (T2SL) mid-wave infrared (MWIR) photodiodes with different passivation schemes on the mesa-sidewalls with significant differences in the resulting low temperature dark currents. Devices fabricated by dry etching passivated with polymerized photoresist, show orders of magnitude lower dark currents as compared to unpassivated devices. The mesa side walls were examined using high resolution transmission electron microscopy (HRTEM) with a special focus on the interface between the superlattice material the dielectric passivation. Material analysis on nanometer scale at the mesa sidewall interface was performed using energy dispersive X-ray (EDX) spectrometry. EDX line scans were obtained from interfaces for different passivated unpassivated devices, using the highly focused electron beam in TEM, to investigate the chemical compositions. The unpassivated photoresist-passivated mesas, with different electrical properties, revealed different sidewall morphologies compositions. An oxygen containing layer was observed in photoresist-passivated devices covering the whole mesa sidewall. We think this plays a role in reducing surface leakage dark current. In HR-TEM the mesa sidewall topography reveals preferential etching of one superlattice component as previously observed. Nevertheless, the dielectric material covers the sidewall uniformly.
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11.
  • Kundozerova, T. V., et al. (författare)
  • Binary anodic oxides for memristor-type nonvolatile memory
  • 2012
  • Ingår i: Physica Status Solidi. C, Current topics in solid state physics. - : Wiley. - 1610-1634 .- 1610-1642. ; 9:7, s. 1699-1701
  • Tidskriftsartikel (refereegranskat)abstract
    • The temperature dependence of the optical properties of InGaAs/GaAs double quantum wells (QWs) grown by molecular beam epitaxy (MBE) on (100) and (311)A GaAs substrates has been studied by photoluminescence (PL). It is found that for an excitation of 50 mW, the PL quenching for (100) and (311)A QWs occurs at 220 K and 300 K, respectively. This suggests that the high index plane (311)A has superior structural properties and less non-radiative defect centers than the conventional (100) plane. The better optical quality of the QWs grown on (311)A is also confirmed by the narrowing of the full width at half-maximum (FWHM) of the PL emission: 10 nm for (311)A and 20 nm for (100). From these findings it is expected that optical devices grown on (311)A GaAs planes should have better performances than those grown on conventional (100) orientation. We have also carried out a systematic study to investigate the effect of post-growth thermal annealing on the optical quality of the QWs. We observed a substantial improvement of the PL efficiency with annealing temperatures in the range 500-700 °C for all samples. However, this PL enhancement is accompanied by a blueshift. These energy shifts can be explained by interdiffusion or intermixing of In and Ga atoms at the interfaces between the QWs and the barriers. A noticeable narrowing of the PL linewidth with higher annealing temperatures could be explained by a homogenisation of the quantum well interfaces.
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12.
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13.
  • Liuolia, Vytautas, et al. (författare)
  • Near- and far-field optical characterization of InGaN photonic crystal light emitting diodes
  • 2012
  • Ingår i: Physica Status Solidi. C, Current topics in solid state physics. - : Wiley. - 1610-1634 .- 1610-1642. ; 9:7, s. 1664-1666
  • Tidskriftsartikel (refereegranskat)abstract
    • Light extraction from InGaN photonic crystal (PhC) light emitting diodes (LEDs) has been studied by scanning near-field optical microscopy and time-resolved photoluminescence. The observed patterns of the near-field intensity are complex and do not correspond to the physical structure of the photonic crystal. Comparison with conventional LEDs without the PhC showed that PhC not only improves the light extraction, but also makes the LED emission more homogeneous.
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14.
  • Marcinkevicius, Saulius, et al. (författare)
  • Carrier dynamics and localization in AlInN/GaN heterostructures
  • 2013
  • Ingår i: Physica Status Solidi. C, Current topics in solid state physics. - : Wiley. - 1610-1634 .- 1610-1642. ; 10:5, s. 853-856
  • Tidskriftsartikel (refereegranskat)abstract
    • Photoexcited carrier dynamics and localization potentials in Al0.86In0.14N/GaN heterostructure have been examined by time-resolved photoluminescence (PL), transient photoreflectance and scanning near-field optical spectroscopy. The large GaN and AlInN PL intensity difference, and the short AlInN PL decay and GaN PL rise times indicate efficient photoexcited carrier transfer from AlInN to GaN via sub-band edge states. Near-field PL scans and photoreflectance data show that the diameter of the localization sites and the distance between them are well below 100 nm. Majority of these states is assigned to In clusters, in which the valence band has a higher energy than the valence band in a uniform AlInN alloy. It is likely that the carrier transport through the sub-band edge states proceeds via high conductivity channels involving extended defects.
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15.
  • Metaferia, Wondwosen, et al. (författare)
  • Selective area heteroepitaxy through nanoimprint lithography for large area InP on Si
  • 2012
  • Ingår i: Physica Status Solidi. C, Current topics in solid state physics. - : Wiley. - 1610-1634 .- 1610-1642. ; 9:7, s. 1610-1613
  • Tidskriftsartikel (refereegranskat)abstract
    • The use of nanoimprint lithography, a low cost and time saving alternative to E-beam lithography, for growing heteroepitaxial indium phosphide layer on silicon is demonstrated. Two types of patterns on 500 nm and 200 nm thick silicon dioxide mask either on InP substrate or InP seed layer on silicon were generated by UV nanoimprint lithography: (i) circular openings of diameter 150 nm and 200 nm and (ii) line openings of width ranging from 200 nm to 500 nm. Selective area growth and epitaxial lateral overgrowth of InP were conducted on these patterns in a low pressure hydride vapour phase epitaxy reactor. The epitaxial layers obtained were characterized by atomic force microscopy, scanning electron microscopy and micro photoluminescence. The growth from the circular openings on InP substrate and InP (seed) on Si substrate is extremely selective with similar growth morphology. The final shape has an octahedral flat top pyramid type geometry. These can be used as templates for growing InP nanostructures on silicon. The grown InP layers from the line openings on InP substrates are ∌ 2.5 ÎŒm thick with root mean square surface roughness as low as 2 nm. Completely coalesced layer of InP over an area of 1.5 mm x 1.5 mm was obtained.The room temperature photoluminescence intensity from InP layers on InP substrate is 55% of that of homoepitaxial InP layer. The decrease in PL intensity with respect to that of the homoepitaxial layer is probably due to defects associated with stacking faults caused by surface roughness of the mask surface. Thus in this study, we have demonstrated that growth of heteroepitaxial InP both homogeneously and selectively on the large area of silicon can be achieved. This opens up the feasibility of growing InP on large area silicon for several photonic applications.
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16.
  • Montesdeoca-Santana, Amada, et al. (författare)
  • Phosphorous gettering in acidic textured multicrystalline solar cells
  • 2011
  • Ingår i: Physica Status Solidi. C, Current topics in solid state physics. - : Wiley. - 1610-1634 .- 1610-1642. ; 8:3, s. 743-746
  • Tidskriftsartikel (refereegranskat)abstract
    • The influence of phosphorus gettering is studied in thiswork applied to an acidic textured multicrystalline siliconsubstrate. The texturization was achieved with an HF/HNO3 solution leading to nanostructures on the silicon surface. It has been demonstrated in previous works that this textured surface decreases the reflectance on the solar cell and increases the surface area improving the photon collection and enhancing the short circuit current.The present study investigates the effect on the minoritycarrier lifetime of the phosphorous diffusion when it is carried out on this textured surface. The lifetime is measured by means microwave photoconductance decay and quasi steady state phototoconductance devices. The diffused textured wafers are used to fabricate solar cells and their electrical parameters are analyzed.
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17.
  • Nisar, Jawad, 1980-, et al. (författare)
  • Study of electronic and optical properties of BiTaO4 for photocatalysis
  • 2012
  • Ingår i: Physica Status Solidi. C, Current topics in solid state physics. - : Wiley-VCH Verlagsgesellschaft. - 1610-1634 .- 1610-1642. ; 9:7, s. 1593-1596
  • Tidskriftsartikel (refereegranskat)abstract
    • We present the optical absorption spectrum of BiTaO4 using the photo acoustic spectroscopy (PAS) technique and first principle approach. Band gap have been estimated 2.65 and 2.45 eV using PAS method and DFT calculations, respectively. Position of reduction and oxidation level with respect to vacuum level are identified, which shows that BiTaO4 can be used as photocatalyst for hydrogen production. Electronic structure is explained by plotting total density of states (TDOS).
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18.
  • Pinos, Andrea, et al. (författare)
  • Scanning near-field optical spectroscopy of AlGaN epitaxial layers
  • 2012
  • Ingår i: Physica Status Solidi. C, Current topics in solid state physics. - : Wiley. - 1610-1634 .- 1610-1642. ; 9:7, s. 1617-1620
  • Tidskriftsartikel (refereegranskat)abstract
    • Band gap fluctuations and carrier localization in AlxGa1-xN films with x values varying from 0.30 to 0.50 has been studied by scanning near-field optical microscopy (SNOM) by measuring photoluminescence. The measurements have revealed a dual localization potential. Microscopic scale potential variations, detected by the SNOM, were most pronounced in the lower Al content samples. The nanoscopic carrier localization potentials, evaluated from the width of the photoluminescence spectra, were largest in layers with the largest AlN molar fraction. The large scale potential fluctuations were attributed to Ga rich regions close to grain boundaries or atomic layer steps. The density, size and band gap energy of these domains were found to be composition dependent. The nanoscopic potential variations have been assigned to small-scale compositional fluctuations, possibly, occurring due to formation of Al rich grains during growth.
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19.
  • Santos, P., et al. (författare)
  • Electrical activity of multivacancy defects in silicon
  • 2012
  • Ingår i: Physica Status Solidi. C, Current topics in solid state physics. - : Wiley. - 1610-1634 .- 1610-1642. ; 9:10-11, s. 2000-2004
  • Tidskriftsartikel (refereegranskat)abstract
    • The formation processes and properties of multivacancy defects in Si have been recently the subject of several re-search studies. Here we report on density functional calculations concerning the stability and electrical activity of the tetravacancy, pentavacancy and hexavacancy complexes in Si. Formation energy calculations indicate that Four-Fold Coordinated (FFC) V4 and V5 are more stable than Part-of-Hexagonal-Ring (PHR) or planar structures by at least 1.2 eV and 0.6 eV, respectively. This relative stability order between configurations remains unchanged for different charged states from double plus to double minus. Calculations of the electrical activity predict deep acceptor levels for the FFC defects. Accordingly, electron traps related to (–/0) and (=/–) levels near Ec – 0.5 eV were found for V4 and V5, whereas levels for V6 were estimated at Ec – 0.35 eV. No donor levels were found for these defects
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20.
  • Sedrine, N. Ben, et al. (författare)
  • Optical properties of InN/In0.73Ga0.27N multiple quantum wells studied by spectroscopic ellipsometry
  • 2011
  • Ingår i: Physica Status Solidi. C, Current topics in solid state physics. - : Wiley. - 1610-1634 .- 1610-1642. ; 8:5, s. 1629-1632
  • Tidskriftsartikel (refereegranskat)abstract
    • In this work we study the optical properties of two high quality fifty-periods of In-polarity InN/In0.73Ga0.27N MQWs samples, grown by radio-frequency plasma-assisted molecular beam epitaxy, with different well (0.5-1 nm) and barrier thicknesses (3-4 nm). We employ spectroscopic ellipsometry at room temperature in the energy range from 0.6 to 6 eV, and incidence angles of 60 and 70°. Ellipsometric data were successfully modelled using the model dielectric function approach and a multilayer model assuming the MQWs as a homogeneous layer. The E0, A and E1 MQWs transition energies were determined and found to exhibit a blueshift with decreasing the well thickness.
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21.
  • Shahid, Naeem, et al. (författare)
  • Effect of hole shapes on the reliability of deeply-etched InP-based photonic crystal devices
  • 2012
  • Ingår i: Physica Status Solidi. C, Current topics in solid state physics. - : Wiley. - 1610-1634 .- 1610-1642. ; 9:7, s. 1670-1673
  • Tidskriftsartikel (refereegranskat)abstract
    • We present systematic evaluation of the optical transmission characteristics of a set of photonic crystal waveguides (PhCWs) fabricated by two schemes. An optimized hole-reshaping process to obtain cylindrical holes was applied in one scheme and a comparison is made with as-etched PhCWs. The spectral characteristics of the transmission mini- stopband (MSB) in identical waveguides show that the reliability, in terms of spectral position and shape, of fabricated PhCWs using the hole reshaping process is significantly improved in comparison to the as-etched waveguides. The obtained MSB characteristics are attractive for coarse WDM filtering and wavelength selective mirrors.
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22.
  • Smirnov, Yury, et al. (författare)
  • Inverse problem method for complex permittivity reconstruction of layered media in a rectangular waveguide
  • 2014
  • Ingår i: Physica Status Solidi. C, Current topics in solid state physics. - : Wiley-VCH Verlagsgesellschaft. - 1610-1634 .- 1610-1642. ; 11:5-6, s. 969-974
  • Tidskriftsartikel (refereegranskat)abstract
    • We solve the inverse problem of finding frequency-dependent complex permittivity of a multi-sectional dielectric diaphragm in a waveguide of rectangular cross section from the transmission coefficient measured at different frequencies. Based on the developed recursive method we perform a detailed analysis for one-, two- and three sectional diaphragms
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23.
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24.
  • Sudhakar, S., et al. (författare)
  • Irradiation induced nanotrack and property modification in Zn 3P 2
  • 2012
  • Ingår i: Physica Status Solidi. C, Current topics in solid state physics. - : Wiley. - 1610-1634 .- 1610-1642. ; 9:7, s. 1636-1639
  • Tidskriftsartikel (refereegranskat)abstract
    • Zn 3P 2 epilayers were grown on InP (100) substrates by liquid phase epitaxy (LPE) using In solvent. Zinc composition in the epilayers was varied by changing the zinc mole fraction in the growth melt and was confirmed by energy dispersive X-ray analysis (EDAX). Stoichiometric Zn 3P 2 epilayers were subjected to 100 MeV Ni ion irradiation with various ion fluences of 1 × 10 10 to 1 × 10 13 ions/cm 2 at 77 K. From the high resolution X-ray diffraction (HRXRD) of 100 MeV Ni ion irradiated epilayers, the decrease in the peak intensities and increase in the FWHM values were observed. AFM analysis revealed the formation of nanotracks in the irradiated Zn 3P 2 epilayers. Hall measurements showed the decrease in carrier mobility with the increase of ion fluence. The absorption band edge of Zn 3P 2 gradually decreased from 1.49 eV to 1.42 eV upon increasing the ion fluence.
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25.
  • Thiagarajan, Kannan, et al. (författare)
  • Electron-Phonon and electron-defect Scattering Rates in Semiconducting Zig-Zag Carbon Nanotubes
  • 2012
  • Ingår i: Physica Status Solidi. C, Current topics in solid state physics. - : Wiley. - 1610-1634 .- 1610-1642. ; 9:1, s. 22-25
  • Tidskriftsartikel (refereegranskat)abstract
    • Electron-phonon and electron-defect scattering rates have been calculated within a tight-binding approach for semiconducting zigzag carbon nanotubes. The scattering rates for (5,0), (7,0), (10,0), (13,0) and (25,0) nanotubes have been investigated. The electron-phonon scattering rate shows both diameter and temperature dependence, and the dependence of the electron-defect scattering rate on nanotube diameter is similar to that of the electron-phonon scattering rate. Backscattering and forward scattering for electrons interacting with defects occur with equal probability at all energies. The importance of electron-defect scattering relative to electron-phonon scattering depends very much on the energy of the electron.
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26.
  • Tumėnas, Saulius, et al. (författare)
  • Dielectric function and refractiveindex of GaBixAs1-x(x = 0.035, 0.052, 0.075)
  • 2012
  • Ingår i: Physica Status Solidi. C, Current topics in solid state physics. - Weinheim : Wiley-VCH Verlagsgesellschaft. - 1610-1634 .- 1610-1642. ; 9:7, s. 1633-1635
  • Tidskriftsartikel (refereegranskat)abstract
    • MBE grown GaBiAs epitaxial layers with Bi content of3.5 %, 5.2 %, and 7.5 %, sandwiched between GaAs,have been investigated by spectroscopic ellipsometry inthe infrared and absorption threshold spectral regions.The real and imaginary parts of the dielectric function ofGaBiAs indicate bandgap Eg and spin-orbit splitting Δ0+values close to literature data. The refractive index ofGaBiAs in the IR region 0.2–0.8 eV exceeds that ofGaAs by ca. 0.8 %, 2.3 %, and 3.6 %, for Bi content3.5 %, 5.2 %, and 7.5 %, respectively.
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27.
  • Valenta, Jan, et al. (författare)
  • Polarization of photoluminescence excitation and emission spectra of silicon nanorods within single Si/SiO2 nanowires
  • 2011
  • Ingår i: Physica Status Solidi. C, Current topics in solid state physics. - : Wiley-VCH Verlagsgesellschaft. - 1610-1634 .- 1610-1642. ; 8:3, s. 1017-1020
  • Tidskriftsartikel (refereegranskat)abstract
    • Polarization properties of individual silicon nanowires are studied using an optical micro-spectroscopy setup equipped with a Fresnel rhomb to rotate the polarization of the exciting laser and the analyzer to characterize the polarization of emitted photoluminescence. The Si nanowire samples are prepared by electron-beam lithography, plasma etching and oxidation. The fabricated wires are embedded in SiO2 and oriented parallel to the Si substrate. Due to the fluctuating wire diameter (around 5 nm) the very long wires (several tens of μm) are effectively divided into an array of quantum rods (prolate ellipsoids). These structures have strong photoluminescence under UV-blue excitation at room temperature. The degree of photoluminescence linear polarization of both excitation and emission is very high, between 0.9-1, and reveals relatively low fluctuations at different spots of the wires. Experimental results are compared with available theoretical models leading to the conclusion that the high polarization degree is mostly due to surface charges (dielectric confinement) with smaller contribution of quantum confinement effects.
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28.
  • Zetterling, Carl-Mikael, et al. (författare)
  • Future high temperature applications for SiC integrated circuits
  • 2012
  • Ingår i: Physica Status Solidi. C, Current topics in solid state physics. - : Wiley-VCH Verlag. - 1610-1634 .- 1610-1642. ; 9:7, s. 1647-1650
  • Tidskriftsartikel (refereegranskat)abstract
    • The main advantage of SiC is its high critical field for breakdown. This leads to much lower on-resistance for high voltage devices compared to silicon, but at a higher price that has to be offset by system gains. However, it is not straightforward to exploit this advantage, which is clear from the many different device types that are presently being commercialized. There are other advantages of SiC yet to be fully investigated: the possibility of high temperature operating electronics and radiation hard devices. If integrated circuits in SiC are also available, the system advantage is larger. Here temperature ranges higher than that of SOI should be aimed at, and some of these new application areas will be described. An overview of IC research will be ended with a description of our selected technology operated at 300 °C.
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29.
  • Zhao, Hanyue, et al. (författare)
  • Density functional theory study of ordered defect Cu-(In,Ga)-Se compounds
  • 2012
  • Ingår i: Physica Status Solidi. C, Current topics in solid state physics. - : Wiley. - 1610-1634 .- 1610-1642. ; 9:7, s. 1600-1603
  • Tidskriftsartikel (refereegranskat)abstract
    • CuIn1-xGaxSe2 is used as absorber material in thin-film photovoltaics. Presence of defect arrays of 2V(Cu)(-) + X-Cu(2+) complexes (X = In or Ga) in the material results in the formation of ordered defect phases, like for instance Cu(In1-xGax)(3)Se-5 and Cu(In1-xGax)(5)Se-8. An understanding of these defects phases is of considerably importance since they can strongly affect the performance of the solar cell. Density functional theory calculation with a hybrid functional is carried out to study the electronic structures and optical properties of these ordered defect phases. Fundamental properties, such as the band bowing, the band alignment and the absorption coefficients, are presented, and their dependence on material composition is discussed.
  •  
30.
  • Zhao, Yichen, et al. (författare)
  • Size-tuneable synthesis of photoconducting poly-(3-hexylthiophene) nanofibres and nanocomposites
  • 2012
  • Ingår i: Physica Status Solidi. C, Current topics in solid state physics. - : Wiley. - 1610-1634 .- 1610-1642. ; 9:7, s. 1546-1550
  • Tidskriftsartikel (refereegranskat)abstract
    • Poly-(3-hexylthiophene) (P3HT) has been applied in many fields such as organic solar cells, printed electronic circuits, due to superior semiconducting properties compared to other semiconducting polymers. The presence of p-p interaction causes regio-regular P3HT to form ordered lamellar stacks during crystallisation. Here we report a simple room temperature, solution based method to synthesise P3HT nanofibres with controllable sizes. Our method is based on differing solubility of P3HT in various solvents. In a mixed solvent environment, we could control the precipitation of P3HT to obtain nanofibres with various diameters by varying the ratios of the solvents. We found that the lengths of the nanofibres could be controlled with concentration of the solution. Other methods to obtain nanofibres of P3HT invariably involves heating and controlled cooling which makes reproducibility and morphology control difficult. Furthermore, we synthesised a nanocomposite consisting of P3HT nanofibres and quasi-type-II quantum dots and evaluated the photoelectric properties of the nanofibres as well as the nanocomposites using interdigitated gold microelectrodes.
  •  
31.
  • Edwards, M.J., et al. (författare)
  • Pressure and temperature dependence of GaN/AlGaN high electron mobility transistor based sensors on a sapphire membrane
  • 2012
  • Ingår i: Physica Status Solidi (C) Current Topics in Solid State Physics. - : Wiley. - 1862-6351. ; 9, s. 960-963
  • Tidskriftsartikel (refereegranskat)abstract
    • This paper reports a high pressure sensor based on a GaN/AlGaN High Electron Mobility Transistor (HEMT) that uses its 375 mm thick sapphire substrate to provide a robust base and enables device operation up to at least 60 bar (6 MPa). Transduction of changes in ambient pressure occurs via piezoelectric and pyroelectric effects on the channel conductance. The HEMTs were strategically placed along an 8 mm 2 GaN/AlGaN/GaN/sapphire chip; where the central 4 mm diameter behaves as a pressure sensitive 'drumskin'. The location of peak response lies in the HEMT at the geometric centre of the drumskin, demonstrated by the change in I DS when the pressure was increased from 0 to 60 bar. The response of six strategically placed HEMTs along the chip's surface, were compared to a finite element model to predict sensor behaviour. © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
  •  
32.
  • Fagerlind, Martin, 1980, et al. (författare)
  • Optimization of recessed ohmic contacts for AlGaN/AlN/GaN heterostructures using C(V) characterization of MSHM structures
  • 2011
  • Ingår i: Physica Status Solidi (C) Current Topics in Solid State Physics. - 1610-1642 .- 1862-6351. ; 8:7-8, s. 2204-2206
  • Tidskriftsartikel (refereegranskat)abstract
    • Recess etching is used to reduce the resistance of ohmiccontacts to an AlGaN/AlN/GaN heterostructure. Theminimization of the resistance relies on exact etching ofthe barrier. For this purpose C(V) measurements of theetched contacts, before annealing, are used to characterizethe effect of the recess etch. Using the C(V) measurementsa Cl2/Ar based ICP/RIE etch recipe with a stabilizedetch rate of approximately 3 Å/s is developed. By utilizing the recess etch the contact resistivity is reducedfrom the non etched 0.9 Ω•mm to 0.3 Ω•mm when approximately2 nm remains of the barriers, while maintaininga low sheet resistance. The C(V) measurementsmake it possible to monitor sheet carrier density vs. etchdepth. Furthermore, the C(V) measurement gives large-areaaverage values that is not easily obtained with AFMmeasurements.
  •  
33.
  • Farivar, Rashid, 1982, et al. (författare)
  • Initial boron growth on GaN and AlN surfaces by molecular beam epitaxy
  • 2010
  • Ingår i: Physica Status Solidi (C) Current Topics in Solid State Physics. - : Wiley. - 1610-1642 .- 1862-6351. ; 7:1, s. 25-27
  • Konferensbidrag (refereegranskat)abstract
    • Elemental boron was thermally deposited, using the MBEtechnique, on surfaces of AlN and GaN. To suppress boron clustering, nitrogen was supplied from an RF nitrogen plasma source. Reflection high energy electron diffraction was used to monitor the surface before and during the growth. On the GaN surface, low concentrations of boron (̃0.1 ML) resulted in additional 6-fold highly streaky reflection rods indicating a reconstructed GaN(0001) surface. By increasing the boron concentration to ̃0.5 ML, however, the growth resulted in the formation of 3D islands as observed by spots in the RHEED pattern. Islands were also observed by atomic force microscopy and scanning electron microscopy. The AlN surface produced surface morphological features already for the lowest boron concentration, i.e. ̃0.1 ML coverage. © 2010 Wiley-VCH Verlag GmbH & Co. KGaA.
  •  
34.
  • Ferreira da Silva, A., et al. (författare)
  • Improved theoretical model of InN optical properties
  • 2014
  • Ingår i: Physica Status Solidi (C) Current Topics in Solid State Physics. - : Wiley. - 1862-6351. ; 11:3-4, s. 581-584
  • Tidskriftsartikel (refereegranskat)abstract
    • The optical properties of InN are investigated theoretically by employing the projector augmented wave (PAW) method within Green's function and the screened Coulomb interaction approximation (GWo). The calculated results are compared to previously reported calculations which use local density approximation combined with the scissors-operator approximation. The results of the present calculation are compared with reported values of the InN bandgap and with low temperature near infrared luminescence measurements of InN films deposited by a modified Ion Beam Assisted Deposition technique.
  •  
35.
  • Gorji, Sepideh, et al. (författare)
  • Highly controlled InAs nanowires on Si(111) wafers by MOVPE
  • 2012
  • Ingår i: physica status solidi (c). - : Wiley. - 1610-1642 .- 1862-6351. ; 9:2
  • Konferensbidrag (refereegranskat)abstract
    • We have investigated epitaxial growth of InAs layers on 2 '' Si (111) substrates by Metalorganic Vapor Phase Epitaxy. Structural and morphological characterization results confirm high quality of the obtained thin layers. Then, we have utilized the InAs layers as substrates for InAs nanowire growth and Au nanoparticles were lithographically defined at various positions on the surface. Statistical analysis performed on the InAs nanowires grown on 2 '' substrates demonstrates our full control on the position, diameter and vertical alignment across the wafer. One possible device application of the aforementioned structure is wrap-gated Metal-Oxide-Semiconductor Field-Effect Transistors where the InAs layer is employed as the bottom contact and the InAs nanowires act as channel materials. [GRAPHICS] SEM image of part of epitaxially grown InAs nanowires on the InAs layer on 2" Si substrate. The scale bar is 50 mu m. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
  •  
36.
  • Holomb, R., et al. (författare)
  • Boson peak in low-frequency Raman spectra of AsxS100-x glasses: nanocluster contribution
  • 2010
  • Ingår i: Physica Status Solidi (C) Current Topics in Solid State Physics. - : Wiley. - 1610-1642 .- 1862-6351. ; 7:3-4, s. 885-888
  • Tidskriftsartikel (refereegranskat)abstract
    • The origin of the Boson peak was investigated using Raman spectroscopy and ab initio calculations. Low frequency Raman active vibrational modes of different branchy-, ring- and cage-like AsmSn nanoclusters were calculated and compared to experimentally determined Raman spectra of AsxS100-x glasses with different compositon. A good correlation was found between the spectral features and the calculated Raman modes. The possible structural nature of the Boson peak in arsenic chalcogenides is proposed and discussed.
  •  
37.
  • Kaniewska, M., et al. (författare)
  • Hole emission mechanism in Ge/Si quantum dots
  • 2011
  • Ingår i: Physica Status Solidi (C) Current Topics in Solid State Physics. - : Wiley. - 1610-1642 .- 1862-6351. ; 8:2, s. 411 -413
  • Tidskriftsartikel (refereegranskat)abstract
    • The mechanisms determining emission of holes in self-assembled Ge quantum dots (QDs) embedded in the p-type Si matrix have been investigated. Specimens were prepared by molecular beam epitaxy (MBE). Electrical methods such as deep level transient spectroscopy (DLTS) and capacitance versus voltage (C-V) measurements were used for the study. The emission mechanisms were identified by measuring a QD-related signal as a function of the repetition frequency of the filling pulses with the reverse voltage and the pulse voltage as a parameter. An observed shift of the signal position or its absence versus the voltage parameters was interpreted in terms of thermal, tunnelling and mixed processes and attributed to the presence of a Coulomb barrier formed as a result of the charging effect. Thermal emission properties of the QDs were characterized under such measurement conditions that tunnelling contributions to the DLTS spectra could be neglected.
  •  
38.
  • Khatab, A., et al. (författare)
  • Comparative Optical Studies of InGaAs/GaAs Quantum Wells Grown by MBE on (100) and (311)A GaAs Planes
  • 2012
  • Ingår i: Physica Status Solidi (C) Current Topics in Solid State Physics. - : Wiley. - 1610-1642 .- 1862-6351. ; 9:7, s. 1621-1623
  • Tidskriftsartikel (refereegranskat)abstract
    • The temperature dependence of the optical properties of InGaAs/GaAs double quantum wells (QWs) grown by molecular beam epitaxy (MBE) on (100) and (311)A GaAs substrates has been studied by photoluminescence (PL). It is found that for an excitation of 50 mW, the PL quenching for (100) and (311)A QWs occurs at 220 K and 300 K, respectively. This suggests that the high index plane (311)A has superior structural properties and less non-radiative defect centers than the conventional (100) plane. The better optical quality of the QWs grown on (311)A is also confirmed by the narrowing of the full width at half-maximum (FWHM) of the PL emission: 10 nm for (311)A and 20 nm for (100). From these findings it is expected that optical devices grown on (311)A GaAs planes should have better performances than those grown on conventional (100) orientation. We have also carried out a systematic study to investigate the effect of post-growth thermal annealing on the optical quality of the QWs. We observed a substantial improvement of the PL efficiency with annealing temperatures in the range 500-700 C for all samples. However, this PL enhancement is accompanied by a blueshift. These energy shifts can be explained by interdiffusion or intermixing of In and Ga atoms at the interfaces between the QWs and the barriers. A noticeable narrowing of the PL linewidth with higher annealing temperatures could be explained by a homogenisation of the quantum well interfaces.
  •  
39.
  • Malmros, Anna, 1977, et al. (författare)
  • Evaluation of an InAlN/AlN/GaN HEMT with Ta-based ohmic contacts and PECVD SiN passivation
  • 2014
  • Ingår i: Physica Status Solidi (C) Current Topics in Solid State Physics. - : Wiley. - 1610-1642 .- 1862-6351. ; 11:3-4, s. 924-927
  • Tidskriftsartikel (refereegranskat)abstract
    • An InAlN/AlN/GaN HEMT with Au-free Ta-based ohmic contacts and a high-quality PECVD SiN passivation is reported. The ohmic contacts were annealed at 550 degrees C, resulting in a contact resistance of 0.64 Omm. The gate length was 50 nm. The device performance and the process were evaluated by performing DC-, pulsed IV-, RF-, and load-pull measurements. It was observed that current slump was effectively mitigated by the passivation layer. The DC channel current density increased by 71 % to 1170 mA/mm at the knee of the IV curve, and the transconductance increased from 382 to 477 mS/mm after passivation. At the same time the gate leakage increased, and the extrinsic f(max) decreased from 207 to 140 GHz. Output powers of 4.1 and 3.5 W/mm were measured after passivation at 31 and 40 GHz, respectively.
  •  
40.
  • Marcinkevicius, Saulius, et al. (författare)
  • Optical properties and carrier dynamics in m-plane InGaN quantum wells
  • 2014
  • Ingår i: physica status solidi c. - : Wiley. - 1610-1642.
  • Konferensbidrag (refereegranskat)abstract
    • Scanning near-field and time-resolved photoluminescence spectroscopy have been applied to characterize single m-plane InGaN QW structures. The PL spectra were found to be formed by emission from the extended and the localized states. Lateral dimensions of uniform potential regions were placed around a few tens of nm. It was shown that optimization of the template for the QW growth results in a more uniform emission spectrum and a reduced effect of carrier localization. The radiative recombination time at low temperatures was found to be short, about 0.5 ns. At room temperature, nonradiative recombination via efficient recombination centres was prevailing. Complexes of Ga vacancies with O were suggested to play this role.
  •  
41.
  • Paranichev, D., et al. (författare)
  • Photovoltaic properties of Si-NiO structure
  • 2012
  • Ingår i: Physica Status Solidi (C) Current Topics in Solid State Physics. - : Wiley. - 1862-6351. ; 9:7, s. 1597-1599
  • Tidskriftsartikel (refereegranskat)abstract
    • The investigation of the photovoltaic properties of a Si-NiO structure was carried out. NiO films were prepared by thermal oxidation of metallic nickel at different temperatures. The load and luminous characteristics were obtained, and on the basis of these measurements the efficiency, fill factor, short circuit current and open-circuit voltage were determined. Finally, possible mechanisms of the observed phenomena, as well as the possibility of their use for optoelectronic devices, are briefly discussed.
  •  
42.
  • Son, Nguyen Tien, et al. (författare)
  • Silicon in AlN : shallow donorand DX behaviors
  • 2011
  • Ingår i: physica status solidi (c)P hys. Status Solidi C 8, No. 7–8, 2167–2169 (2011) / DOI 10.1002/pssc.201001030. - : Wiley. ; , s. 2167-2169
  • Konferensbidrag (refereegranskat)abstract
    • In unintentionally Si-doped AlN bulk samples, an electron paramagnetic resonance (EPR) spectrum with characteristics of a shallow donor, previously assigned to the shallow Si donor, was observed at room temperature in darkness. Temperature dependent studies of the EPR signal showed that Si is a DX center in AlN. However, with the negatively charged DX– state determined to be only ∼78 meV below the neutral shallow donor state, Si should behave as a shallow dopant in AlN at normal device operating temperatures.
  •  
43.
  •  
44.
  • Stattin, Martin, 1983, et al. (författare)
  • Waveguides for nitride based quantum cascade lasers
  • 2011
  • Ingår i: Physica Status Solidi (C) Current Topics in Solid State Physics. - : Wiley. - 1610-1642 .- 1862-6351. ; 8:7-8, s. 2357-2359
  • Tidskriftsartikel (refereegranskat)abstract
    • Waveguide designs for AlGaN-based near-infrared quantum cascade lasers are investigated using a finite-difference method mode solver. Because of the negligibly small refractive index difference between the AlN/GaN/AlGaN gain region and the surrounding AlGaN current injection and extraction layers, a low refractive index substrate (sapphire) and a low refractive index dielectric (SiO2) are used for vertical confinement of the optical field. A ridge waveguide with an off-center contact metallization is used for lateral confinement. The off-center contact allows for the propagation of a TM mode with low metal induced loss and sufficient optical confinement in the gain region. A viable waveguide design with a metal-induced loss of 6.1 cm-1 and a confinement factor of 0.52 is demonstrated.
  •  
45.
  • Yadranjee Aghdam, Parisa, 1986, et al. (författare)
  • Modeling of Sb-heterostructure backward diode for millimeter- and submillimeter-wave detection
  • 2013
  • Ingår i: Physica Status Solidi (C) Current Topics in Solid State Physics. - : Wiley. - 1610-1642 .- 1862-6351. ; 10:5, s. 777-781
  • Tidskriftsartikel (refereegranskat)abstract
    • We present modeling of Sb-heterostructure backward tunneling diode (Sb-HBD) for high efficient millimeter- and submillimeter wave detection. The diode heterostructure is modeled and optimized using TCAD software implementing a non-local band-to-band tunneling model combining with the standard drift-diffusion model. The physical device model was found to be in good agreement with reported experimental results. InAsSb/AlSb/AlGaSb structures were proposed and simulated considering the material growth. The potential of the Sb-HBDs for high frequency operation applications is investigated.
  •  
46.
  • Ye, Hong, 1987, et al. (författare)
  • High quality strain-compensated multiple InAs/AlGaNAs quantum dot layers grown by MBE
  • 2013
  • Ingår i: Physica Status Solidi (C) Current Topics in Solid State Physics. - : Wiley. - 1610-1642 .- 1862-6351. ; 10:5, s. 765-768
  • Tidskriftsartikel (refereegranskat)abstract
    • Intermediate band solar cells have attracted significant interest as a possible means of achieving high conversion efficiency. Under optimized growth parameters, we successfully achieve a high density of uniform InAs QDs grown on various matrixes by molecular beam epitaxy. Incorporating N atoms into GaAs and AlGaAs barriers effectively compensates the internal compressive strain and avoids formation of dislocations and defects. The 50 stacking of high density and uniform InAs QDs was demonstrated without detectable dislocations using 26 nm GaNAs as a barrier.
  •  
47.
  • Zhuravlev, K S, et al. (författare)
  • Linear polarized photoluminescence from GaN quantum dots imbedded in AlN matrix
  • 2010
  • Ingår i: physica status solidi c. - : Wiley. - 1862-6351 .- 1610-1642.
  • Konferensbidrag (refereegranskat)abstract
    • We report microphotoluminescence studies of GaN/AlN quantum dots grown along the (0001) crystal axis by molecular-beam epitaxy on sapphire substrates. To obtain quantum dots with different density and size a nominal GaN coverage was varied from 1 to 4 monolayers. The highest density of quantum dots was about 1011 cm-2, so about 103 quantum dots was excited in experiments. We found that the photoluminescence intensity of a sample with the smallest amount of deposited GaN decreases in more than two orders of magnitude under continuous-wave laser exposure during about 30 minutes and then it remains stable. The photoluminescence intensity of the rest samples was time-independent quantity. The emission band of the former sample exhibits a prominent linear polarization along the growth plane. We assume that the quite high degree of polarization can be due anisotropy of strain and/or shape of the quantum dots formed near dislocations which act also as recombination centers causing photoluminescence quenching.
  •  
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